ENA1084 [SANYO]
P-Channel Silicon MOSFET General-Purpose Switching Device Applications; P沟道MOSFET硅通用开关设备的应用
| 型号： | ENA1084 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总4页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1084
SANYO Sem iconductors
DATA S HEET
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH6341
Features
•
Low ON-resistance.
•
High-speed switching.
•
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
--30
±20
-- 5
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
D
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
I
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2✕0.8mm)
--20
1.6
150
A
DP
P
W
°C
°C
D
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
D GS
V
μA
μA
V
(BR)DSS
I
V
V
V
V
=--30V, V =0V
GS
--1
±10
--2.6
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
V
(off)
GS
=--10V, I =--1mA
--1.2
2.8
D
Forward Transfer Admittance
yfs
⏐
=--10V, I =--3A
4.8
45
S
⏐
D
R
(on)1
I
I
I
=--3A, V =--10V
GS
59
100
115
mΩ
mΩ
mΩ
DS
DS
DS
D
D
D
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=--1.5A, V =--4.5V
GS
71
82
=--1.5A, V =--4V
GS
Marking : YT
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
equipment.
's products or
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30508PE TI IM TC-00001220 No. A1084-1/4
CPH6341
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Ciss
Coss
Crss
V
V
V
=-- 10V, f=1MHz
=-- 10V, f=1MHz
=-- 10V, f=1MHz
430
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
105
75
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
7.5
26
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
45
t
f
35
Total Gate Charge
Qg
V
DS
V
DS
V
DS
=-- 15V, V =-- 10V, I =-- 5A
GS
=-- 15V, V =-- 10V, I =-- 5A
GS
=-- 15V, V =-- 10V, I =-- 5A
GS
10
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
2.0
2.5
-- 0.87
D
D
V
I =-- 5A, V =0V
S GS
-- 1.2
SD
Package Dimensions
unit : mm (typ)
Switching Time Test Circuit
7018A-003
V
= --15V
DD
V
IN
0V
--10V
2.9
0.15
0.05
I
= --3A
D
6
5
4
3
V
IN
R =5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
1
2
0.95
1 : Drain
2 : Drain
3 : Gate
0.4
CPH6341
P.G
50Ω
S
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
I
-- V
I
-- V
D GS
D
DS
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--6
--5
--4
--3
--2
V
DS
= --10V
-3.5V
-
--1
0
--0.5
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
DS
-- V
IT13379
Gate-to-Source Voltage, V
GS
-- V
IT13380
No. A1084-2/4
CPH6341
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
160
140
120
100
80
160
140
120
100
80
Ta=25°C
I = --1.5A
D
--3.0A
60
60
40
40
20
0
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT13382
Gate-to-Source Voltage, V
-- V
IT13381
GS
⏐y
fs⏐ -- I
I
-- V
S SD
D
--10
7
5
10
7
V = --10V
DS
V =0V
GS
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
--0.2
2
3
5
7
2
3
5
7
2
3
5
7
--0.4
--0.6
--0.8
--1.0
--1.2
--0.1
--1.0
--10
Drain Current, I -- A
D
IT13383
Diode Forward Voltage, V -- V
SD
IT13384
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
2
1000
V
V
= --15V
= --10V
GS
f=1MHz
DD
7
5
100
7
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT13386
--0.1
--1.0
--10
IT13385
Drain Current, I -- A
Drain-to-Source Voltage, V
-- V
D
DS
V
-- Qg
A S O
GS
--10
5
V
= --15V
DS
3
2
I
= --20A
PW≤10μs
DP
--9
--8
--7
--6
--5
--4
--3
--2
I = --5A
D
--10
7
5
I = --5A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--1
0
When mounted on ceramic substrate
(900mm2✕0.8mm)
--0.01
--0.01
0
1
2
3
4
5
6
7
8
9
10
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
--10
2
3
5 7
--0.1
Total Gate Charge, Qg -- nC
IT13387
Drain-to-Source Voltage, V
-- V
IT13388
DS
No. A1084-3/4
CPH6341
P
-- Ta
D
2.0
When mounted on ceramic substrate
(900mm2✕0.8mm)
1.6
1.5
1.0
0.5
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13389
Note on usage : Since the CPH6341 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1084-4/4
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