EMH2601 [SANYO]
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device; N沟道和P沟道MOSFET的硅通用开关设备
| 型号： | EMH2601 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| 文件： | 总6页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8731
SANYO Sem iconductors
DATA S HEET
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
EMH2601
Features
• The EMH2601 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
ultrahigh-speed switching, thereby enabling high-density mounting.
• 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
N-channel
20
P-channel
--20
Unit
V
V
DSS
GSS
V
±10
3
±10
--2
V
I
A
D
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
I
PW≤10µs, duty cycle≤1%
12
--8
A
DP
P
D
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm)
1.0
1.2
150
W
W
°C
°C
P
T
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
20
V
µA
µA
V
(BR)DSS
D GS
I
V
V
V
V
=20V, V =0V
GS
1
DSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
GSS
V
(off)
GS
=10V, I =1mA
0.4
2.4
1.3
D
Forward Transfer Admittance
yfs
=10V, I =1.5A
4.0
58
S
D
R
(on)1
I
D
I
D
I
D
=1.5A, V =4V
GS
76
99
mΩ
mΩ
mΩ
pF
pF
pF
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=0.8A, V =2.5V
GS
71
=0.3A, V =1.8V
GS
98
150
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Marking : FA
Ciss
V
V
V
=10V, f=1MHz
DS
=10V, f=1MHz
DS
=10V, f=1MHz
DS
365
77
Coss
Crss
67
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71006PE MS IM TC-00000042
No.8731-1/6
EMH2601
Continued from preceding page.
Ratings
typ
Parameter
Symbol
t (on)
Conditions
Unit
min
max
Turn-ON Delay Time
Rise Time
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
11.2
45
ns
ns
ns
ns
nC
nC
nC
V
d
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
42
t
46
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=10V, V =4V, I =3A
GS
4.9
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
=10V, V =4V, I =3A
GS
0.7
D
=10V, V =4V, I =3A
GS
2.0
D
V
SD
I =3A, V =0V
S
0.85
1.2
GS
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=--1mA, V =0V
--20
V
µA
µA
V
(BR)DSS
D
GS
=--20V, V =0V
I
V
V
V
V
--1
±10
--1.4
DSS
DS
GS
DS
DS
GS
I
=±8V, V =0V
DS
GSS
V
(off)
GS
=--10V, I =--1mA
--0.4
1.9
D
Forward Transfer Admittance
yfs
=--10V, I =--1A
3.2
115
165
260
420
73
S
D
R
(on)1
I
D
I
D
I
D
=--1A, V =--4V
GS
150
235
520
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
DS
DS
Static Drain-to-Source On-State Resistance
R
R
(on)2
(on)3
=--0.5A, V =--2.5V
GS
=--0.3A, V =1.8V
GS
Input Capacitance
Ciss
V
V
V
=--10V, f=1MHz
=--10V, f=1MHz
=--10V, f=1MHz
DS
DS
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
60
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
11.8
33
t
r
Turn-OFF Delay Time
Fall Time
t (off)
d
48
t
43
f
Total Gate Charge
Qg
Qgs
Qgd
V
V
V
=--10V, V =--4V, I =--2A
GS
4.7
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
=--10V, V =--4V, I =--2A
GS
0.75
1.6
D
=--10V, V =--4V, I =--2A
GS
D
V
SD
I =--2A, V =0V
S GS
--0.83
--1.2
Package Dimensions
unit : mm (typ)
7045-002
Electrical Connection
8
7
6
5
1 : Source1
0.2
0.125
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
8
5
1
4
0.5
1
2
3
4
2.0
Top view
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : EMH8
No.8731-2/6
EMH2601
Switching Time Test Circuit
[N-channel]
[P-channel]
V
= --10V
DD
V
V
=10V
DD
IN
V
IN
0V
4V
0V
--4V
I
= --1A
D
I
=1.5A
D
V
IN
V
R =10Ω
IN
L
R =6.67Ω
L
D
V
OUT
D
V
OUT
PW=10µs
D.C.≤1%
PW=10µs
D.C.≤1%
G
G
EMH2601
EMH2601
P.G
50Ω
S
P.G
50Ω
S
I
-- V
[Nch]
I
-- V
[Pch]
D
DS
D
DS
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
3.0
2.5
2.0
1.5
1.0
0.5
0
V
= --1.5V
GS
--0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V
-- V
DS
IT10538
IT10403
DS
I
-- V
[Nch]
I
-- V
[Pch]
D
GS
D
GS
--2.0
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
--0.6
--0.4
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
=10V
V
= --10V
DS
DS
--0.2
0
0.2
0
0
--0.5
--1.0
--1.5
--2.0
--2.5
0
0.5
1.0
1.5
2.0
IT10404
Gate-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
GS
IT10539
GS
No.8731-3/6
EMH2601
R
(on) -- V
R
(on) -- V
GS
[Nch]
Ta=25
[Pch]
DS
GS
DS
200
180
160
140
120
100
80
700
600
500
400
300
200
Ta=25°C
°
C
--0.5A
--1.0A
1.5A
800mA
I = --0.3A
I =300mA
D
D
60
40
100
0
20
0
8
0
--2
--4
--6
--8
0
2
4
6
Gate-to-Source Voltage, V
-- V
IT10405
Gate-to-Source Voltage, V
-- V
IT10540
GS
GS
R
DS
(on) -- Ta
[Nch]
R
DS
(on) -- Ta
[Pch]
500
400
300
200
180
160
140
120
100
80
60
40
100
0
20
0
--60
20
160
IT10541
--40 --20
0
40
60
80 100 120 140
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
IT10406
Ambient Temperature, Ta -- °C
yfs -- I
[Nch]
yfs -- I
[Pch]
D
D
10
10
V
= --10V
V
=10V
DS
DS
7
7
5
5
3
2
3
2
1.0
1.0
7
5
7
5
3
2
3
2
0.1
0.01
0.1
--0.01
2
3
5
7
2
3
5
7
2
3
5 7
10
2
3
5
7
2
3
5
7
2
3
5 7
--10
--0.1
--1.0
0.1
1.0
Drain Current, I -- A
Drain Current, I -- A
IT10542
IT10407
D
D
I
-- V
[Nch]
I
-- V
[Pch]
S
SD
S
SD
10
7
5
--10
7
5
V
=0V
V
=0V
GS
GS
3
2
3
2
--1.0
1.0
7
5
7
5
3
2
3
2
--0.1
0.1
7
5
7
5
3
2
3
2
0.01
0.3
--0.01
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
-- V IT10543
SD
--1.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, V
-- V
IT10408
Diode Forward Voltage, V
SD
No.8731-4/6
EMH2601
SW Time -- I
[Nch]
=10V
=4V
SW Time -- I
[Pch]
D
D
5
5
V
V
V
V
= --10V
= --4V
GS
DD
DD
GS
3
2
3
2
100
100
7
5
7
5
t
f
t
f
3
2
3
2
t (on)
d
10
t (on)
d
7
5
10
7
3
5
0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
--0.01
--0.1
IT10544
Drain Current, I -- A
Drain Current, I -- A
D
IT10409
D
Ciss, Coss, Crss -- V
[Nch]
Ciss, Coss, Crss -- V
[Pch]
DS
DS
1000
1000
f=1MHz
f=1MHz
7
5
7
5
Ciss
3
2
3
2
100
100
7
5
7
5
3
2
3
2
0
--5
--10
--15
--20
0
5
10
15
20
Drain-to-Source Voltage, V
-- V
Drain-to-Source Voltage, V
-- V
IT10545
IT10410
DS
DS
V
-- Qg
[Nch]
V
-- Qg
GS
[Pch]
GS
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
I =3A
D
=10V
V
= --10V
DS
DS
I = --2A
D
0.5
0
--0.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Total Gate Charge, Qg -- nC
Total Gate Charge, Qg -- nC
IT10546
IT10411
A S O
A S O
[Nch]
≤10µs
[Pch]
2
3
2
I
=12A
DP
≤10µs
I
= --8A
--10 DP
7
5
10
7
5
1ms
I =3A
3
2
D
I = -
-2A
D
3
2
--1.0
7
5
1.0
7
5
3
2
3
2
Operation in this
area is limited by R (on).
Operation in this area
DS
is limited by R (on).
--0.1
7
5
DS
0.1
7
5
Ta=25°C
Single pulse
3
2
Ta=25°C
3
2
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.01
--0.01
--0.01
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
2
3
5
7
2
3
5
7
2
3
5
7
2
3
0.01
0.1
1.0
10
--0.1
--1.0
--10
Drain-to-Source Voltage, V
DS
-- V
Drain-to-Source Voltage, V
-- V
IT10547
IT10412
DS
No.8731-5/6
EMH2601
P
-- Ta
[Nch, Pch]
D
1.4
1.2
1.0
0.8
0.6
0.4
Mounted on a ceramic board (900mm2✕0.8mm)
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT10413
Note on usage : Since the EMH2601 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of July, 2006. Specifications and information herein are subject
to change without notice.
PS No.8731-6/6
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