ECH8901 [SANYO]

PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET; PNP外延平面硅晶体管P沟道MOSFET硅


型号：	ECH8901
厂家：	SANYO SEMICON DEVICE
描述：	PNP Epitaxial Planar Silicon Transistor P-Channel Silicon MOSFET PNP外延平面硅晶体管P沟道MOSFET硅晶体晶体管
文件：	总6页 (文件大小：364K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ECH8901

Ordering number : ENA1472

SANYO Sem iconductors

DATA S HEET

PNP Epitaxial Planar Silicon Transistor

P-Channel Silicon MOSFET

ECH8901

General-Purpose Switching Device

Applications

Appllications

•

Charger.

Features

•

Composite type, facilitating high-density mounting.

Mounting height 0.9mm.

IECO is guaranteed for preventing reverse ﬂow from the collector to the emitter.

Halogen free compliance.

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

[TR]

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

--30

-- 5

CBO

CEO

EBO

-- 3

Collector Current (Pulse)

Base Current

-- 6

--600

1.3

Collector Dissipation

Junction Temperature

Storage Temperature

[FET]

When mounted on ceramic substrate (900mm²0.8mm) 1unit

150

Tstg

--55 to +150

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

--12

±10

-- 6

DSS

GSS

PW 10 s, duty cycle 1%

--40

≤

Marking : LA

Continued on next page.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer's

products or equipment.

www.semiconductor-sanyo.com/network

No. A1472-1/6

21010EA TK IM TC-00002268

ECH8901

Continued from preceding page.

Parameter

Allowable Power Dissipation

Total Dissipation

Symbol

Conditions

Ratings

Unit

When mounted on ceramic substrate (900mm²0.8mm) 1unit

When mounted on ceramic substrate (900mm²0.8mm)

1.3

1.5

Channel Temperature

Storage Temperature

Tch

150

°C

Tstg

--55 to +150

at Ta=25°C

Electrical Characteristics

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

[TR]

Collector Cutoff Current

= --30V, I =0A

--0.1

--1

CBO

CB E

= --4V, I =0A

EBO

EB C

Emitter Cutoff Current

= --4.5V, I =0A

ECO

EC B

DC Current Gain

= --2V, I = --500mA

200

560

Gain-Bandwidth Product

Output Capacitance

= --10V, I = --500mA

380

MHz

CE C

Cob

= --10V, f=1MHz

(sat)1

(sat)2

(sat)

I = --1.5A, I = --30mA

--140

--90

--200

--135

--1.2

Collector-to-Emitter Saturation Voltage

I = --1.5A, I = --75mA

C B

Base-to-Emitter Saturation Voltage

Collector-to-Base Breakdown Voltage

Collector-to-Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Turn-On Time

I = --1.5A, I = --30mA

--0.83

I = --10 A, I =0A

--30

--5

(BR)CBO

I = --1mA, R

∞

(BR)CEO

I = --10 A, I =0A

(BR)EBO

See speciﬁed Test Circuit.

270

Storage Time

stg

Fall Time

[FET]

Drain-to-Source Breakdown Voltage

I =--1mA, V =0V

--12

(BR)DSS

=--8V, V =0V

--1

--10

±10

--1.4

DSS

DS GS

Zero-Gate Voltage Drain Current

=--12V, V =0V

DSS

DS GS

Gate-to-Source Leakage Current

Cutoff Voltage

=±8V, V =0V

GSS

GS DS

(off)

=--6V, I =--1mA

--0.4

6.6

yfs

DS D

Forward Transfer Admittance

=--6V, I =--3A

(on)1

(on)2

(on)3

I =--3A, V =--4.5V

D GS

Static Drain-to-Source On-State Resistance

I =--1.5A, V =--2.5V

D GS

I =--0.5A, V =--1.8V

Input Capacitance

Ciss

=--6V, f=1MHz

1000

320

250

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=--6V, f=1MHz

t (on)

See speciﬁed Test Circuit.

Turn-OFF Delay Time

Fall Time

t (off)

105

Total Gate Charge

=--6V, V =--4.5V, I =--6A

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Qgs

Qgd

=--6V, V =--4.5V, I =--6A

1.5

=--6V, V =--4.5V, I =--6A

2.9

I =--6A, V =0V

S GS

--0.81

--1.2

Note : The speciﬁcations shown above are for each individual transistor.

No. A1472-2/6

ECH8901

Package Dimensions

unit : mm (typ)

Electrical Connection

7011A-006

1 : Emitter

2 : Base

3 : Source

4 : Gate

5 : Drain

6 : Drain

Top View

2.9

0.15

7 : Collector

8 : Collector

0 to 0.02

Top view

0.65

0.3

1 : Emitter

2 : Base

3 : Source

4 : Gate

5 : Drain

6 : Drain

7 : Collector

8 : Collector

SANYO : ECH8

Bottom View

Switching Time Test Circuit

[TR]

[FET]

= --6V

PW=20μs

D.C.≤1%

--4.5V

Vout

I = --2A

R =3Ω

INPUT

OUT

PW=10μs

D.C.≤1%

50Ω

100μF

470μF

=5V

= --12V

ECH8901

P. G

50Ω

I =20I = --20I =500mA

C B1 B2

-- V

[TR]

-- V

[TR]

C BE

--2.0

--3.0

--2.5

--2.0

--1.5

--1.0

= --2V

--1.8

--1.6

--1.4

--1.2

--1.0

--0.8

--0.6

--0.4

--2mA

--0.5

--0.2

I =0mA

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

IT14664

Collector-to-Emitter Voltage, V

-- V

IT14663

Base-to-Emitter Voltage, V

-- V

No. A1472-3/6

ECH8901

[TR]

= --0.5V

[TR]

-- I

FE C

= --2V

100

--1.0

--0.01

--0.1

--1.0

--0.01

--0.1

Collector Current, I -- A

IT14665

IT14666

[TR]

Cob -- V

[TR]

-- I

100

f=1MHz

= --10V

100

--0.01

--0.1

--1.0

--10

Collector Current, I -- A

Collector-to-Base Voltage, V

-- V

IT14668

IT14667

[TR]

(sat) -- I

CE C

[TR]

/ I =20

I / I =50

C B

--100

--10

--0.01

--1.0

--0.01

--0.1

--1.0

--0.1

Collector Current, I -- A

IT14669

IT14670

[TR]

(sat) -- I

A S O

/ I =50

--10

= --6A

I = --3A

--1.0

--0.1

Ta=25°C

Single pulse

--0.01

--1.0

--10

--0.01

--0.1

--1.0

--0.01

--0.1

Collector Current, I -- A

IT14671

Collector-to-Emitter Voltage, V

-- V ^IT14672

No. A1472-4/6

ECH8901

-- V

[FET]

= --6V

D GS

--6

--5

--4

--3

--2

--10

--9

--8

--7

--6

--5

--4

--3

--2

--1

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

--0.5

--1.0

--1.5

--2.0

--2.5

Drain-to-Source Voltage, V

-- V

Gate-to-Source Voltage, V

-- V

IT12948

IT12947

(on) -- V

[FET]

(on) -- Ta

[FET]

100

Ta=25°C

--3.0A

--1.5A

= --0.5A

--2

--4

--6

--8

--60 --40 --20

80 100 120 140 160

Gate-to-Source Voltage, V

-- V

Ambient Temperature, Ta -- ∞C

IT12949

IT12950

| yfs | -- I

[FET]

-- V

[FET]

S SD

--10

= --6V

=0V

--1.0

1.0

--0.1

0.1

--0.01

0.01

--0.001

0.001

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

5 7

--10

--0.01

--0.1

--1.0

Drain Current, I -- A

IT12951

Diode Forward Voltage, V

-- V

IT12952

[FET]

Ciss, Coss, Crss -- V

[FET]

SW Time -- I

1000

= --6V

= --4.5V

f=1MHz

Ciss

1000

100

t (on)

100

--2

--4

--6

--8

--10

--12

IT12954

--0.01

--0.1

--1.0

--10

Drain Current, I -- A

Drain-to-Source Voltage, V -- V

IT12953

No. A1472-5/6

ECH8901

-- Qg

A S O

--4.5

--4.0

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

--100

= --6V

= --6A

= --40A

PW≤10μs

1ms

--10

I = --6A

--1.0

Operation in this

area is limited by R (on).

--0.1

Ta=25°C

Single pulse

--0.5

When mounted on ceramic substrate (900mm²×0.8mm) 1unit

--0.01

--0.1

--1.0

--10

IT12956

IT12955

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, V

-- V

-- Ta

1.8

When mounted on ceramic substrate

(900mm²

0.8mm)

1.6

1.5

1.4

1.3

1.2

1.0

0.8

0.6

0.4

0.2

100

120

140

160

IT12957

Ambient Temperature, Ta -- °C

Note on usage : Since the ECH8901 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using

products at values that exceed, even momentarily, rated values (such as maximum ratings, operating

condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

Co.,Ltd. products described or contained herein.

SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all

semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures

or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give

rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,

adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but

are not limited to protective circuits and error prevention circuits for safe design, redundant design, and

structural design.

In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are

controlled under any of applicable local export control laws and regulations, such products may require the

export license from the authorities concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system, or

otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the

SANYO Semiconductor Co.,Ltd. product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed

for volume production.

Upon using the technical information or products described herein, neither warranty nor license shall be

granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any

third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third

party's intellectual property rights which has resulted from the use of the technical information and products

mentioned above.

This catalog provides information as of February, 2010. Speciﬁcations and information herein are subject

to change without notice.

PS No. A1472-6/6

ECH8901 [SANYO]

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