CPH3216 [SANYO]

DC/DC Converter Applications; DC / DC转换器应用
CPH3216
型号: CPH3216
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

DC/DC Converter Applications
DC / DC转换器应用

转换器
文件: 总5页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number:ENN6405A  
PNP/NPN Epitaxial Planar Silicon Transistors  
CPH3116/CPH3216  
DC/DC Converter Applications  
Applications  
Package Dimensions  
unit:mm  
· Relay drivers, lamp drivers, motor drivers.  
2150A  
Features  
[CPH3116/CPH3216]  
· Adoption of MBIT processes.  
· Large current capacitance.  
2.9  
0.15  
0.4  
· Low collector-to-emitter saturation voltage.  
· High-speed switching.  
3
0.05  
· Ultrasmall package facilitates miniaturization in end  
products (mounting height : 0.9mm).  
· High allowable power dissipation.  
2
1
1.9  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : CPH3  
Specifications  
( ) : CPH3116  
Absolute Maximum Ratings at Ta = 25˚C  
Parameter  
Symbol  
Conditions  
Ratings  
Unit  
Collector-to-Base Voltage  
V
(–50)80  
(–50)80  
(–)50  
V
V
CBO  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
V
CES  
V
V
CEO  
V
(–)5  
V
EBO  
I
(–)1.0  
(–)3  
A
C
Collector Current (Pulse)  
Base Current  
I
A
CP  
I
(–)200  
0.9  
mA  
W
˚C  
˚C  
B
Mounted on a ceramic board (600mm2×0.8mm)  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
P
C
Tj  
150  
Tstg  
–55 to +150  
Electrical Characteristics at Ta = 25˚C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Collector Cutoff Current  
I
V
=(–)40V, I =0  
E
(–)0.1  
(–)0.1  
560  
µA  
µA  
CBO  
CB  
EB  
CE  
Emitter Cutoff Current  
DC Current Gain  
I
V
V
=(–)4V, I =0  
EBO  
C
h
=(–)2V, I =(–)100mA  
C
200  
FE  
Gain-Bandwidth Product  
Output Capacitance  
f
V
V
=(–)10V, I =(–)300mA  
C
=(–)10V, f=1MHz  
420  
(9)6  
MHz  
pF  
T
CE  
CB  
Cob  
Marking : CPH3116 : AR, CPH3216 : CR  
Continued on next page.  
Any and all SANYO products described or contained herein do not have specifications that can handle  
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s  
control systems, or other applications whose failure can be reasonably expected to result in serious  
physical and/or material damage. Consult with your SANYO representative nearest you before using  
any SANYO products described or contained herein in such applications.  
SANYO assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other  
parameters) listed in products specifications of any and all SANYO products described or contained  
herein.  
SANYO Electric Co.,Ltd. Semiconductor Company  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
83100TS (KOTO)/21000TS (KOTO) TA-2706 No.6405–1/5  
CPH3116/CPH3216  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
(–280) (–430)  
130 190  
(–145) (–220)  
90 135  
mV  
mV  
mV  
mV  
V
Collector-to-Emitter Saturation Voltage  
V
V
I
=(–)500mA, I =(–)10mA  
CE(sat)1  
C
B
Collector-to-Emitter Saturation Voltage  
Base-to-Emitter Saturation Voltage  
Collector-to-Base Breakdown Voltage  
I
I
I
=(–)300mA, I =(–)6mA  
B
CE(sat)2  
C
C
C
V
=(–)500mA, I =(–)10mA  
B
(–)0.81 (–)1.2  
BE(sat)  
(–50)  
80  
V
V
=(–)10µA, I =0  
E
(BR)CBO  
V
(–)50  
80  
V
Collector-to-Emitter Breakdown Voltage  
V
I
I
=(–)100µA, R =0  
BE  
(BR)CES  
C
V
Collector-to-Emitter Breakdown Voltage  
Emitter-to-Base Breakdown Voltage  
Turn-ON Time  
V
V
=(–)1mA, R =  
(–)50  
(–)5  
V
(BR)CEO  
(BR)EBO  
C
BE  
I =(–)10µA, I =0  
V
E
C
t
See specified test circuit.  
35  
(170)  
330  
ns  
ns  
ns  
ns  
on  
Storage Time  
Fall Time  
t
See specified test circuit.  
See specified test circuit.  
stg  
t
f
(30)40  
Switching Time Test Circuit  
I
I
B1  
B2  
PW=20µs  
D.C.1%  
(For PNP, the polarity is reversed.)  
Input  
R
B
R
L
VR  
+
+
50Ω  
100µF 470µF  
–5V  
25V  
20I = –20I = I =500mA  
B1  
B2  
C
I
-- V  
I
-- V  
CE  
C
CE  
C
--1000  
--800  
--600  
--400  
1000  
800  
600  
400  
CPH3116  
40mA  
30mA  
--2mA  
200  
0
--200  
0
I =0  
B
I =0  
B
CPH3216  
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
Collector-to-Emitter Voltage, V  
CE  
– V  
Collector-to-Emitter Voltage, V  
CE  
– V  
IT01643  
IT01644  
I
-- V  
I
-- V  
BE  
C
BE  
C
--1.0  
1.0  
0.9  
CPH3116  
=--2V  
CPH3216  
V =2V  
CE  
--0.9  
--0.8  
--0.7  
--0.6  
--0.5  
--0.4  
V
CE  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
--0.3  
--0.2  
0.1  
0
--0.1  
0
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
IT01646  
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
IT01645  
Base-to-Emitter Voltage, V  
BE  
– V  
Base-to-Emitter Voltage, V – V  
BE  
No.6405–2/5  
CPH3116/CPH3216  
h
FE  
-- I  
h -- I  
FE C  
C
1000  
1000  
CPH3216  
CPH3116  
7
7
V
CE  
=2V  
V
CE  
=--2V  
5
5
Ta=75°C  
3
2
3
2
25°C  
25°C  
100  
100  
7
5
7
5
3
2
3
2
10  
0.01  
10  
--0.01  
2
3
5
7
2
3
5
7
2
3
2
3
5
7
2
3
5
7
2
3
--0.1  
--1.0  
0.1  
1.0  
Collector Current, I – A  
Collector Current, I – A  
IT01647  
IT01648  
C
C
f
-- I  
f
-- I  
T
C
T
C
5
3
2
5
3
2
CPH3116  
=--10V  
CPH3216  
=10V  
V
V
CE  
CE  
1000  
1000  
7
5
7
5
3
2
3
2
100  
100  
7
5
7
5
3
3
2
2
0.01  
2
3
5
7
2
3
5
7
--1.0  
2
3
2
3
5
7
2
3
5
7
2
3
--0.01  
--0.1  
0.1  
1.0  
Collector Current, I – A  
Collector Current, I – A  
IT01649  
IT01650  
C
C
Cob -- V  
Cob -- V  
CB  
CB  
100  
100  
CPH3116  
f=1MHz  
CPH3216  
f=1MHz  
7
5
7
5
3
2
3
2
10  
10  
7
5
7
5
3
2
3
2
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
100  
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
--100  
0.1  
1.0  
10  
--0.1  
--1.0  
--10  
Collector-to-Base Voltage, V  
– V IT01651  
Collector-to-Base Voltage, V  
CB  
– V IT01652  
CB  
V
(sat) -- I  
V
(sat) -- I  
C
CE  
C
CE  
--1.0  
1.0  
CPH3216  
CPH3116  
7
5
7
5
I
C
/ I =20  
B
I
C
/ I =20  
B
3
2
3
2
--0.1  
0.1  
7
5
7
5
3
2
3
2
--0.01  
--0.01  
0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.1  
--1.0  
IT01653  
0.1  
1.0  
IT01654  
Collector Current, I – A  
Collector Current, I – A  
C
C
No.6405–3/5  
CPH3116/CPH3216  
V
(sat) -- I  
CE  
V
(sat) -- I  
CE  
C
C
--1.0  
1.0  
7
CPH3216  
/ I =50  
CPH3116  
7
5
I
C
I
C
/ I =50  
B
B
5
3
2
3
2
0.1  
7
--0.1  
7
5
5
3
2
3
2
--0.01  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.01  
--0.1  
--1.0  
IT01655  
0.01  
1.0  
IT01656  
Collector Current, I – A  
Collector Cu0rr.1ent, I – A  
C
C
V
(sat) -- I  
V
(sat) -- I  
BE C  
BE  
C
--10  
10  
CPH3216  
/ I =50  
CPH3116  
/ I =50  
7
5
7
5
I
I
C
B
C
B
3
2
3
2
--1.0  
1.0  
Ta= --25°C  
75°C  
Ta= --25°C  
75°C  
7
5
7
5
25°C  
25°C  
3
2
3
2
--0.1  
--0.01  
0.1  
0.01  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
--0.1  
--1.0  
IT01657  
0.1  
1.0  
IT01658  
Collector Current, I – A  
Collector Current, I – A  
C
C
A S O  
P
-- Ta  
C
10  
7
5
1.4  
CPH3116/CPH3216  
CPH3116/CPH3216  
I
=3A  
1.2  
CP  
3
2
1.0  
0.9  
0.8  
I =1A  
C
1.0  
7
5
3
2
0.6  
0.4  
0.1  
7
5
Ta=25°C  
3
2
Single pulse  
Mounted on a ceramic board(600mm ×0.8mm)  
0.2  
0
2
For PNP, minus sign is omitted.  
0.01  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
0
20  
40  
60  
80  
100  
120  
140  
160  
1.0  
10  
100  
IT01659  
Collector-to-Emitter Voltage, V  
CE  
– V  
Ambient Temperature, Ta °C  
IT01660  
No.6405–4/5  
CPH3116/CPH3216  
Specifications of any and all SANYO products described or contained herein stipulate the performance,  
characteristics, and functions of the described products in the independent state, and are not guarantees  
of the performance, characteristics, and functions of the described products as mounted in the customer's  
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,  
the customer should always evaluate and test devices mounted in the customer's products or equipment.  
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all  
semiconductor products fail with some probability. It is possible that these probabilistic failures could  
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,  
or that could cause damage to other property. When designing equipment, adopt safety measures so  
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective  
circuits and error prevention circuits for safe design, redundant design, and structural design.  
In the event that any or all SANYO products(including technical data,services) described or  
contained herein are controlled under any of applicable local export control laws and regulations,  
such products must not be exported without obtaining the export license from the authorities  
concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system,  
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"  
for the SANYO product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not  
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but  
no guarantees are made or implied regarding its use or any infringements of intellectual property rights  
or other rights of third parties.  
This catalog provides information as of August, 2000. Specifications and information herein are subject to  
change without notice.  
PS No.6405–5/5  

相关型号:

CPH3216-TL-E

双极晶体管,(-)50V,(-)1A,低饱和压,(PNP)NPN 单 CPH3
ONSEMI

CPH3217

TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 3A I(C) | SOT-346
ETC

CPH3221

PNP / NPN Epitaxial Planar Silicon Transistors DC / DC Converter Applications
SANYO

CPH3222

PNP / NPN Epitaxial Planar Silicon Transistors
SANYO

CPH3223

PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
SANYO

CPH3223-TL-E

Bipolar Transistor, (-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single CPH3
ONSEMI

CPH3234

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
SANYO

CPH3235

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
SANYO

CPH3236

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
SANYO

CPH3237

NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications
SANYO

CPH3238

DC / DC Converter Applications
SANYO

CPH3239

DC / DC Converter Applications
SANYO