ATP404-TL-H [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用
| 型号： | ATP404-TL-H |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | General-Purpose Switching Device Applications |
| 文件： | 总7页 (文件大小：465K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1405A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
ATP404
Features
•
•
ON-resistance R (on)1=5.5m (typ.)
4.5V drive
Input capacitance Ciss=6400pF (typ.)
Halogen free compliance
Ω
DS
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
60
±20
95
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
PW 10 s, duty cycle 1%
380
70
A
≤
μ
≤
DP
Allowable Power Dissipation
Channel Temperature
P
Tc=25 C
W
°
D
Tch
150
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
214
48
mJ
A
AS
I
AV
Note : 1 V =30V, L=100 H, I =48A
*
μ
DD
2 L 100 H, Single pulse
AV
*
≤
μ
Product & Package Information
Package Dimensions
unit : mm (typ)
• Package
: ATPAK
7057-001
• JEITA, JEDEC
: -
• Minimum Packing Quantity : 3,000 pcs./reel
ATP404-TL-H
Packing Type: TL
Marking
1.5
6.5
4.6
2.6
0.4
0.4
ATP404
4
LOT No.
TL
Electrical Connection
2,4
2
0.55
1
3
0.8
0.6
1 : Gate
0.4
2.3
2.3
1
2 : Drain
3 : Source
4 : Drain
3
SANYO : ATPAK
http://semicon.sanyo.com/en/network
61312 TKIM/12109QA MSIM TC-00001833
No. A1405-1/7
ATP404
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
60
(BR)DSS
D
GS
I
V
=60V, V =0V
10
A
A
μ
DSS
DS GS
I
V
=±16V, V =0V
±10
2.6
μ
GSS
GS DS
V
(off)
|
V
=10V, I =1mA
1.2
V
GS
yfs
DS D
Forward Transfer Admittance
V
I
=10V, I =48A
D
100
5.5
S
|
DS
R
R
(on)1
(on)2
=48A, V =10V
GS
7.2
m
Ω
Ω
DS
DS
D
Static Drain-to-Source On-State Resistance
I
D
=48A, V =4.5V
GS
7.5
10.5
m
Input Capacitance
Ciss
6400
490
380
53
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=20V, f=1MHz
pF
pF
ns
DS
t
t
t
t
(on)
d
r
640
380
520
120
25
ns
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
(off)
ns
d
f
ns
Total Gate Charge
Qg
nC
nC
nC
V
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=30V, V =10V, I =95A
GS
D
25
V
SD
I =95A, V =0V
S GS
0.95
1.2
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
IN
V =30V
DD
10V
0V
L
I
=48A
D
≥50Ω
V
IN
R =0.625Ω
L
D
V
OUT
ATP404
PW=10μs
D.C.≤1%
10V
0V
V
DD
50Ω
G
ATP404
P. G
50Ω
S
Ordering Information
Device
Package
ATPAK
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
ATP404-TL-H
No. A1405-2/7
ATP404
I
D
-- V
DS
I
-- V (off)
D GS
200
180
160
140
120
100
80
200
180
160
140
120
100
80
Tc=25°C
V
=10V
DS
60
60
40
40
20
0
20
0
V
=3.0V
GS
0
0.5
1.0
1.5
2.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Drain-to-Source Voltage, V
-- V
IT14377
Cutoff Voltage, V (off) -- V
GS
IT14378
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
14
12
10
8
16
14
12
10
8
I
=48A
Single pulse
D
Single pulse
6
6
4
4
2
0
2
0
2
3
4
5
6
7
8
9
10
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT14380
IT14379
GS
| yfs | -- I
I
-- V
D
S SD
3
2
3
2
V
=0V
V
=10V
GS
DS
100
Single pulse
7
5
100
3
2
7
5
10
7
5
3
2
3
2
1.0
7
5
10
3
2
7
5
0.1
7
5
3
2
3
2
0.01
7
5
1.0
3
2
7
5
0.1
0.001
2
3
5
7
2
3
5
7
2
3
5
7
2
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT14382
1.0
10
100
IT14381
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
2
3
V
V
=30V
=10V
f=1MHz
DD
GS
2
10000
1000
7
5
7
5
3
2
3
2
1000
100
7
5
7
5
3
2
3
2
0
5
10
15
20
25
30
IT14384
2
3
5
7
2
3
5
7
2
3
5 7
0.1
1.0
10
100
IT14383
Drain Current, I -- A
Drain-to-Source Voltage, V
DS
-- V
D
No. A1405-3/7
ATP404
A S O
V
GS
-- Qg
1000
10
9
7
V
=30V
I
=380A
PW≤10μs
DS
=95A
5
3
2
DP
I
D
I =95A
D
8
100
7
5
7
3
2
6
10
7
5
3
2
5
Operation in this area
is limited by R (on).
DS
4
1.0
7
5
3
2
3
2
0.1
7
5
1
0
3
2
0.01
Tc=25°C
Single pulse
0
50
100
150
IT14385
2
3
5
7
2
3
5
7
2
3
5 7
100
IT14386
0.1
1.0
10
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, V
DS
-- V
P
-- Tc
E
-- Ta
D
AS
120
100
80
80
70
60
50
40
30
20
60
40
20
0
10
0
0
25
50
75
100
125
150
175
IT10478
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT14387
Ambient Temperature, Ta -- °C
No. A1405-4/7
ATP404
Taping Specification
ATP404-TL-H
No. A1405-5/7
ATP404
Outline Drawing
Land Pattern Example
ATP404-TL-H
Mass (g) Unit
Unit: mm
0.266
mm
* For reference
6.5
1.5
2.3
2.3
No. A1405-6/7
ATP404
Note on usage : Since the ATP404 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1405-7/7
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