3LP04MH [SANYO]

P-Channel Silicon MOSFET General-Purpose Switching Device; P沟道MOSFET硅通用开关设备


型号：	3LP04MH
厂家：	SANYO SEMICON DEVICE
描述：	P-Channel Silicon MOSFET General-Purpose Switching Device P沟道MOSFET硅通用开关设备开关通用开关
文件：	总4页 (文件大小：40K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Ordering number : ENA0551

3LP04MH

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

3LP04MH

Features

•

1.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

Unit

--30

±10

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

--200

--800

0.6

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

Mounted on a ceramic board (900mm²✕0.8mm)

Tch

150

°C

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

--30

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=--1mA, V =0V

µA

(BR)DSS

D GS

=--30V, V =0V

--1

DSS

GSS

=±8V, V =0V

±10

V (off)

=--10V, I =--100µA

--0.4

190

--1.4

Forward Transfer Admittance

yfs

=--10V, I =--100mA

320

Ω

(on)1

=--100mA, V =--4V

1.8

2.4

4.5

2.4

3.4

9.0

Static Drain-to-Source On-State Resistance

(on)2

(on)3

=--50mA, V =--2.5V

Ω

=--10mA, V =--1.5V

Ω

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Ciss

=--10V, f=1MHz

Coss

Crss

7.2

2.1

t (on)

See specified Test Circuit.

170

550

350

Turn-OFF Delay Time

Fall Time

t (off)

Marking : QD

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N0806PE SY IM TC-00000230 No. A0551-1/4

3LP04MH

Continued from preceding page.

Ratings

typ

Parameter

Symbol

Conditions

Unit

min

max

Total Gate Charge

Qgs

Qgd

=--10V, V =--4V, I =--200mA

0.58

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

=--10V, V =--4V, I =--200mA

0.17

0.12

=--10V, V =--4V, I =--200mA

I =--200mA, V =0V

S GS

--0.89

--1.2

Package Dimensions

unit : mm (typ)

Switching Time Test Circuit

7019A-003

= --15V

--4V

0.15

2.0

= --100mA

R =150Ω

OUT

0 to 0.02

PW=10µs

D.C.≤1%

0.65

0.3

3LP04MH

P. G

50Ω

1 : Gate

2 : Source

3 : Drain

Rg=5kΩ

SANYO : MCPH3

-- V

--300

--250

--200

--150

--100

--200

--180

--160

--140

--120

--100

--80

V = --10V

--60

--40

--50

--20

--0.5

--1.0

--1.5

--2.0

--2.5

--3.0

IT11699

--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0

Drain-to-Source Voltage, V

-- V

IT11698

Gate-to-Source Voltage, V

-- V

(on) -- V

(on) -- Ta

Ta=25°C

= --100mA

--50mA

--10mA

--1

--2

--3

--4

--5

--6

--7

--8

--60 --40 --20

80 100 120 140 160

Gate-to-Source Voltage, V

-- V

IT11700

Ambient Temperature, Ta -- °C

IT11701

No. A0551-2/4

3LP04MH

fs -- I

-- V

S SD

--1000

1000

V = --10V

V =0V

--100

100

--10

--1.0

--1000

--0.2

--0.4

--0.6

--0.8

--1.0

--1.2

Diode Forward Voltage, V -- V

IT11703

--1.4

--10

--100

Drain Current, I -- mA

IT11702

SW Time -- I

Ciss, Coss, Crss -- V

100

V = --15V

V = --4V

f=1MHz

1000

Ciss

100

t (on)

1.0

--5

--10

--15

--20

--25

--30

--10

--100

Drain Current, I -- mA

IT11704

Drain-to-Source Voltage, V

-- V

IT11705

-- Qg

A S O

--4.0

= --10V

= --200mA

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

= --800mA

≤10µs

--1.0

= --200mA

--0.1

Operation in this

area is limited by R (on).

Ta=25°C

Single pulse

Mounted on a ceramic board (900mm²✕0.8mm)

--0.5

--0.01

0.1

0.2

0.3

0.4

0.5

0.6

0.7

IT11706

--0.1

--1.0

--10

Total Gate Charge, Qg -- nC

Drain-to-Source Voltage, V

-- V

IT11707

-- Ta

0.7

0.6

0.5

0.4

0.3

0.2

0.1

100

120

140

160

IT11708

Ambient Temperature, Ta -- °C

No. A0551-3/4

3LP04MH

Note on usage : Since the 3LP04MH is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of November, 2006. Specifications and information herein are subject

to change without notice.

No. A0551-4/4

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