2SK4221 [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device Applications; N沟道MOSFET硅通用开关设备的应用
| 型号： | 2SK4221 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| 文件： | 总5页 (文件大小：299K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1518
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4221
Features
•
Low ON-resistance, low input capacitance, ultrahigh-speed switching.
Adoption of high reliability HVP process.
Avalanche resistance guarantee.
•
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
V
V
500
±30
26
DSS
V
V
GSS
I
A
D
Drain Current (Pulse)
I
DP
PW 10 s, duty cycle 1%
90
A
≤
μ
≤
2.5
220
150
W
W
Allowable Power Dissipation
P
D
Tc=25 C
°
Channel Temperature
Tch
C
C
°
°
Storage Temperature
Tstg
--55 to +150
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
E
608
14
mJ
A
AS
I
AV
Note : 1 V =99V, L=5mH, I =14A
*
DD
2 L 5mH, Single pulse
AV
*
≤
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
500
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
D GS
V
μA
nA
V
(BR)DSS
I
I
V
V
V
=400V, V =0V
GS
100
±100
5
DSS
DS
GS
DS
=±30V, V =0V
DS
GSS
V
(off)
=10V, I =1mA
3
GS
D
Marking : K4221
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
www.semiconductor-sanyo.com/network
No. A1518-1/5
91609QB TK IM TC-00002057
2SK4221
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
7.5
max
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
| yfs |
(on)
V
=10V, I =13A
15.5
0.18
2250
450
90
S
DS
D
R
I
=13A, V =10V
0.24
Ω
DS
Ciss
D
GS
V
DS
=30V, f=1MHz
=30V, f=1MHz
=30V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Coss
Crss
V
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
V
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
44
d
r
Rise Time
156
224
94
Turn-OFF Delay Time
Fall Time
(off)
d
f
Total Gate Charge
Qg
V
DS
=200V, V =10V, I =26A
GS
87
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
DS
=200V, V =10V, I =26A
GS
16
D
V
DS
=200V, V =10V, I =26A
GS
47
D
V
I =26A, V =0V
GS
1.0
1.3
SD
S
Package Dimensions
unit : mm (typ)
7503-004
4.8
15.6
14.0
3.2
2.0
1.6
1.0
2.0
0.6
1
2
3
1 : Gate
0.6
2 : Drain
3 : Source
5.45
5.45
SANYO : TO-3PB
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V =200V
DD
V
IN
L
10V
0V
I
=13A
≥50Ω
RG
D
R =15.3Ω
L
V
IN
PW=10μs
D.C.≤0.5%
D
V
OUT
2SK4221
10V
0V
V
DD
50Ω
G
2SK4221
S
P. G
R
=50Ω
GS
No. A1518-2/5
2SK4221
I
-- V
DS
I
-- V
D
D GS
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
V
=20V
Tc=25°C
DS
°C
-25
Tc= -
8V
6V
V
=5V
GS
10
0
10
0
0
5
5
3
10
15
20
25
30
IT14811
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
-- V
IT14812
DS
GS
R
(on) -- V
R
(on) -- Tc
DS
DS
GS
0.6
0.5
0.4
0.3
0.2
0.8
0.7
0.6
0.5
0.4
0.3
0.2
I =13A
D
25°
C
--25°
C
0.1
0
0.1
0
--50
--25
0
25
50
75
100
125
150
3
7
9
11
13
15
IT14813
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT14814
GS
| yfs | -- I
I
-- V
D
S SD
7
5
5
V
=10V
V
=0V
DS
GS
3
2
3
2
10
7
5
10
7
3
2
5
1.0
7
5
3
2
3
2
0.1
7
5
1.0
7
5
3
2
3
0.01
0.2
2
5
7
2
3
5
7
2
3
5
7
0.4
0.6
0.8
1.0
1.2
1.4
IT14816
0.1
1.0
10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
IT14815
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
3
10000
f=1MHz
V
V
=200V
=10V
DD
GS
7
5
2
3
2
Ciss
1000
7
5
1000
7
5
3
2
3
2
100
100
7
5
7
5
t (on)
d
3
2
0.1
3
2
2
3
5
7
2
3
5
7
10
2
3
5
0
10
20
30
40
50
IT14818
1.0
Drain Current, I -- A
IT14817
Drain-to-Source Voltage, V
DS
-- V
D
No. A1518-3/5
2SK4221
A S O
V
GS
-- Qg
10
9
2
V
=200V
DS
I
=90A
PW≤10μs
DP
100
7
5
I =26A
D
8
I
=26A
D
3
2
7
10
6
7
5
5
3
2
Operation in
this area is
limited by R (on).
4
1.0
7
5
3
DS
2
3
2
Tc=25°C
Single pulse
1
0
0.1
0.1
0
0
0
10
20
25
20
30
40
50
60
70
80
90
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
1.0
10
100
1000
IT14820
Total Gate Charge, Qg -- nC
IT14819
Drain-to-Source Voltage, V -- V
DS
P
-- Ta
P
-- Tc
D
D
250
3.0
2.5
2.0
1.5
1.0
220
200
150
100
50
0
0.5
0
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
Case Temperature, Tc -- °C
IT14821
IT14799
E
-- Ta
AS
120
100
80
60
40
20
0
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1518-4/5
2SK4221
Note on usage : Since the 2SK4221 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1518-5/5
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