概述
数据手册2SK4198LS_10 概述
General-Purpose Switching Device Applications 通用开关设备的应用
2SK4198LS_10 数据手册
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PDF下载Ordering number : ENA1171A
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK4198LS
Features
•
ON-resistance R (on)=1.8 (typ.)
Ω
DS
•
•
•
Input capacitance Ciss=360pF(typ.)
10V drive
Repetitive avalanche guarantee
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
600
±30
5
DSS
V
V
GSS
*1
I
Limited only by maximum temperature Tch=150 C
A
°
Dc
Drain Current (DC)
I
*2
Tc=25 C (SANYO s ideal heat dissipation condition)*3
4
A
°
’
Dpack
Drain Current (Pulse)
Allowable Power Dissipation
I
PW 10 s, duty cycle 1%
18
A
≤
μ
≤
DP
2.0
30
W
W
P
D
Tc=25 C (SANYO s ideal heat dissipation condition)*3
°
’
Channel Temperature
Tch
150
C
C
°
Storage Temperature
Tstg
--55 to +150
°
Avalanche Energy (Single Pulse) *4
Avalanche Current *5
E
74.6
mJ
A
AS
I
AV
5
3
Avalanche Energy (Repetition)
E
Limited only by maximum temperature Tch=150 C
mJ
°
AR
Note : 1 Shows chip capability.
*
2 Package limited.
*
3 SANYO’s condition is radiation from backside.
*
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
4 V =99V, L=5mH, I =4.5A
*
DD
AV
5 L 5mH, Single pulse
*
≤
Marking : K4198
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
http://semicon.sanyo.com/en/network
No. A1171-1/5
63010 TK IM TC-00002400 / 61808QB MS IM TC-00001442
2SK4198LS
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
600
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=10mA, V =0V
(BR)DSS
D GS
I
V
=480V, V =0V
100
A
μ
DSS
DS
GS
I
V
=±30V, V =0V
±100
5
nA
V
GSS
(off)
GS DS
V
V
=10V, I =1mA
3
GS
| yfs |
(on)
DS
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
V
=10V, I =2.5A
D
1.2
2.4
S
DS
R
I
=2.5A, V =10V
1.8
360
69
2.34
Ω
DS
D GS
Ciss
Coss
Crss
V
=30V, f=1MHz
=30V, f=1MHz
=30V, f=1MHz
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
Output Capacitance
V
DS
Reverse Transfer Capacitance
Turn-ON Delay Time
V
15
DS
t
t
t
t
(on)
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
13
d
r
Rise Time
28
Turn-OFF Delay Time
(off)
39
d
f
Fall Time
15
Total Gate Charge
Qg
V
=200V, V =10V, I =5A
GS
14.3
3.0
8.2
0.9
DS
D
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Qgs
Qgd
V
=200V, V =10V, I =5A
GS
DS
D
V
=200V, V =10V, I =5A
GS
DS
D
V
I =5A, V =0V
S GS
1.2
SD
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
3.2
2.8
0.9
1.2
1.2
0.7
0.75
1 : Gate
1
2
3
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Switching Time Test Circuit
Avalanche Resistance Test Circuit
PW=10μs
D.C.≤0.5%
V
=200V
DD
L
≥50Ω
RG
I
=2.5A
D
V
=10V
R =80Ω
GS
L
D
V
OUT
2SK4198LS
10V
0V
V
50Ω
DD
G
R
2SK4198LS
P.G
S
=50Ω
GS
No. A1171-2/5
2SK4198LS
I
D
-- V
I
D
-- V
DS
GS
14
12
10
8
12
10
8
Tc=25°C
V
=20V
DS
8V
6
6
4
4
2
0
2
0
6V
=5V
V
25
GS
0
5
10
15
20
30
0
2
4
6
8
10
12
14
16
18
20
Drain-to-Source Voltage, V
-- V
IT13521
Gate-to-Source Voltage, V -- V
GS
IT13522
DS
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
6
5
4
3
2
6
5
4
3
2
I =2.5A
D
Tc=75°C
25°C
--25°C
1
0
1
0
5
6
7
8
9
10
11
12
13
14
15
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
IT13523
Case Temperature, Tc -- °C
IT13524
GS
⏐yfs⏐ -- I
I
S
-- V
D
SD
7
5
3
2
V
=20V
V
=0V
GS
DS
10
7
5
3
2
3
2
1.0
7
5
1.0
7
3
2
5
0.1
7
5
3
2
3
2
0.1
0.1
0.01
0.2
2
3
5
7
2
3
5
7
0.4
0.6
0.8
1.0
1.2
1.4
IT13526
1.0
10
Drain Current, I -- A
IT13525
Diode Forward Voltage, V
SD
-- V
D
SW Time -- I
Ciss, Coss, Crss -- V
D
DS
5
2
f=1MHz
V
V
=200V
=10V
DD
GS
1000
3
2
7
5
Ciss
3
2
100
7
5
100
7
5
3
2
3
2
t (on)
d
10
10
7
0.1
7
0
10
20
30
40
50
IT13528
2
3
5
7
2
3
5
7
1.0
10
Drain Current, I -- A
IT13527
Drain-to-Source Voltage, V
DS
-- V
D
No. A1171-3/5
2SK4198LS
V
-- Qg
A S O
GS
5
10
9
V
=200V
3
2
DS
I
I
=18A
PW<10μs
DP
I =5A
D
10
7
5
8
(*1)=5A
Dc
7
3
2
I
(*2)=4A
Dpack
6
1.0
7
5
5
3
2
4
Operation in
this area is
limited by R (on).
3
0.1
7
5
DS
2
3
2
1
0
*1. Shows chip capability
*2. SANYO’s ideal heat dissipation condition
Tc=25°C
Single pulse
0.01
0.1
0
0
0
2
4
6
8
10
12
14
16
2
3
5 7
2
3
5 7
2
3
5 7
2
3
5 7
1.0
10
100
1000
IT13529
Drain-to-Source Voltage, V
-- V
IT13530
Total Gate Charge, Qg -- nC
DS
P
-- Ta
P
-- Tc
D
D
35
30
25
20
15
10
2.5
2.0
1.5
1.0
0.5
0
5
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
IT13531
IT13532
Case Temperature, Tc -- °C
E
-- Ta
AS
120
100
80
60
40
20
0
25
50
75
100
125
150
175
IT10478
Ambient Temperature, Ta -- °C
No. A1171-4/5
2SK4198LS
Note on usage : Since the 2SK4198LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of June, 2010. Specifications and information herein are subject
to change without notice.
PS No. A1171-5/5
2SK4198LS_10 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SK4199LS | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
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| 2SK420 | ETC | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 5A I(D) | TO-220VAR | 获取价格 |
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| 2SK4200LS | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
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| 2SK4201-S19-AY | NEC | Power Field-Effect Transistor, 80A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | 获取价格 |
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| 2SK4203LS | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
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| 2SK4204LS | SANYO | N-Channel Silicon MOSFET General-Purpose Switching Device Applications | 获取价格 |
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| 2SK4206G | PANASONIC | Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN | 获取价格 |
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| 2SK4206G-T | PANASONIC | 0.325mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, JFET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN | 获取价格 |
|
| 2SK4206G-U | PANASONIC | Small Signal Field-Effect Transistor, 0.00047A I(D), 20V, 1-Element, N-Channel, Silicon, Junction FET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN | 获取价格 |
|
| 2SK4206GT | PANASONIC | 0.325mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, JFET, ROHS COMPLIANT, TSSSMINI3-F2, 3 PIN | 获取价格 |
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