2SK3285 [SANYO]
DC/DC Converter Applications; DC / DC转换器应用
| 型号： | 2SK3285 |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | DC/DC Converter Applications |
| 文件： | 总5页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number:ENN6358
N-Channel Silicon MOSFET
2SK3285
DC/DC Converter Applications
Features
Package Dimensions
unit:mm
· Low ON resistance.
· 4V drive.
2093A
[2SK3285]
4.5
10.2
1.3
1.2
0.8
0.4
1
2
3
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
2.55
2.55
unit:mm
2169
[2SK3285]
4.5
10.2
1.3
1
2
3
1.2
2.55
0.8
2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FA
2.55
2.55
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30300TS (KOTO) TA-2280 No.6358–1/5
2SK3285
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
30
±20
40
V
V
DSS
Gate-to-Source Voltage
Drain Current
V
GSS
I
A
D
Drain Current (Pulse)
I
80
A
PW≤10µs, duty cycle≤1%
DP
1.65
40
W
W
˚C
˚C
Allowable Power Dissipation
P
D
Tc=25˚C
Channel Temperature
Storage Temperature
Tch
150
Tstg
–55 to +150
Electrical Characteristics at Ta = 25˚C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0
D GS
V
µA
µA
V
(BR)DSS
I
V
V
V
V
I
=30V, V =0
1
DSS
DS
GS
DS
DS
GS
I
=±16V, V =0
DS
=10V, I =1mA
D
=10V, I =10A
D
±10
2.4
GSS
V
(off)
1.0
12
GS
Forward Transfer Admittance
| yfs |
18
S
R
1
2
=10A, V =10V
GS
17
24
23
34
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS(on)
D
Static Drain-to-Source On-State Resistance
R
I
=4A, V =4.5V
D GS
DS(on)
Ciss
Input Capacitance
V
V
V
=10V, f=1MHz
1000
410
160
11
DS
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
=10V, f=1MHz
DS
=10V, f=1MHz
DS
t
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
d(on)
t
210
80
r
Turn-OFF Delay Time
Fall Time
t
d(off)
t
f
Qg
85
Total Gate Charge
V
V
V
=10V, V =10V, I =20A
GS
17
DS
DS
DS
D
Gate-to-Source Charge
Gate-to-Drain "Miller" Charge
Diode Forward Voltage
Qgs
Qgd
=10V, V =10V, I =20A
GS
4.0
3.5
1.0
D
=10V, V =10V, I =20A
GS
D
V
I =20A, V =0
GS
1.2
SD
S
Switching Time Test Circuit
V
=15V
DD
V
IN
10V
0V
I
=10A
L
D
R =1.5Ω
V
D
IN
V
OUT
PW=10µs
D.C.≤1%
G
P. G
50Ω
S
No.6358–2/5
2SK3285
I
-- V
DS
I
-- V
GS
D
D
10
9
16
V =10V
DS
14
12
10
8
7
V =2.5V
GS
6
8
6
4
5
4
3
2
2
0
1
0
0
0.1
0.2
0.3
0.4
0.5 0.6
0.7 0.8
0.9
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain-to-Source Voltage, V
– V
Gate-to-Source Voltage, V
– V
GS
DS
IT00379
IT00380
R
(on) -- V
R
(on) -- Tc
DS
GS
DS
60
50
40
30
20
60
Tc=25°C
55
50
45
40
35
30
25
20
15
10
10A
I =4A
D
10
0
5
0
0
2
4
6
8
10
12
14
16
18
20
--75 --50 --25
0
25
50
75
100 125 150 175
Gate-to-Source Voltage, V
– V
Case Temperature, Tc – ˚C
GS
IT00382
IT00381
yfs -- I
V
(off) -- Tc
GS
D
100
7
5
2.0
V
=10V
V
=10V
DS
DS
1.8
1.6
1.4
1.2
I =1mA
D
3
2
10
7
5
1.0
0.8
0.6
0.4
3
2
1.0
7
5
3
2
0.2
0
0.1
2
3
5
7
2
3
5
7
--40
--20
0
20
40
60
80
100
120
0.1
10
Drain Curr1e.n0t, I – A
Case Temperature, Tc – ˚C
D
IT00383
IT00384
I
-- V
Ciss, Coss, Crss -- V
DS
F
SD
100
10000
7
f=1MHz
V
=0
7
5
GS
5
3
2
3
2
10
7
5
3
2
Ciss
1000
7
5
1.0
7
5
3
Coss
Crss
3
2
2
0.1
7
5
3
2
100
7
5
0.01
7
3
2
5
3
2
0.001
10
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
0
5
10
15
20
25
30
Drain-to-Source Voltage, V
– V
DS
Diode Forward Voltage, V
SD
– V
IT00385
IT00386
No.6358–3/5
2SK3285
V
-- Qg
SW Time -- I
D
GS
1000
10
9
V
V
=15V
=10V
V
=10V
7
5
DD
GS
DS
I =10A
D
3
2
t
r
8
t (off)
d
7
100
t
7
5
f
6
5
4
3
3
2
t (on)
d
10
7
5
2
3
2
1
0
1.0
0.1
2
3
5
7
2
3
5
7
2
3
5 7
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17
1.0
10
100
IT00388
Total Gate Charge, Qg – nC
Drain Current, I – A
D
IT00387
A S O
P
-- Ta
D
2
2.0
I =80A
DP
<10µs
100
7
5
100µs
1.65
1.5
I =20A
D
3
2
1ms
10
7
5
10ms
3
2
100ms
1.0
1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
0.5
0
0.1
7
5
3
2
Tc=25°C
Single pulse
0.01
2
3
5 7
2
3
5
7
2
3
5 7
2
3
5 7
0
20
40
60
80
100
120
140
160
0.01
0.1
1.0
10
– V
100
IT00389
Ambient Temperature, Ta – ˚C
Drain-to-Source Voltage, V
DS
IT00391
P
-- Tc
I
-- Tc
D
D
60
50
60
50
40
30
20
40
30
20
Limited by package
10
0
10
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Case Temperature, Tc – ˚C
Case Temperature, Tc – ˚C
IT00390
IT01019
No.6358–4/5
2SK3285
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of March, 2000. Specifications and information herein are subject to
change without notice.
PS No.6358–5/5
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