2SK3101 [SANYO]
General-Purpose Switching Device Applications; 通用开关设备的应用型号: | 2SK3101 |
厂家: | SANYO SEMICON DEVICE |
描述: | General-Purpose Switching Device Applications |
文件: | 总5页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Ordering number : ENN7910
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3101LS
Features
• Low ON-resistance.
•
Low Qg.
•
Ultrahigh-Speed Switching Applications.
Avalanche resistance guarantee.
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
400
±30
11
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
I
PW≤10µs, duty cycle≤1%
44
A
DP
2.0
40
W
W
°C
°C
mJ
A
Allowable Power Dissipation
P
D
Tc=25°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
E
69.1
11
AS
I
AV
*1 V =50V, L=1mH, I =11A
DD
AV
*2 L≤1mH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
=1mA, V =0
Unit
min
400
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
V
mA
nA
V
(BR)DSS
D
GS
I
V
V
V
V
=320V, V =0
GS
1.0
±100
4.0
DSS
GSS
DS
GS
DS
DS
I
= ±30V, V =0
DS
V (off)
GS
=10V, I =1mA
3.0
4.0
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3101
yfs
(on)
=10V, I =8A
8.0
S
D
R
I
=8A, V =15V
D GS
0.32
0.4
Ω
DS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Sem iconductor Com pany
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81004 TS IM TB-00000033 No.7910-1/5
2SK3101LS
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
V
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
1850
480
240
19
pF
pF
pF
ns
ns
ns
ns
nC
V
DS
DS
DS
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
35
Turn-OFF Delay Time
Fall Time
t (off)
d
140
41
t
f
Total Gate Charge
Diode Forward Voltage
Qg
V
=200V, V =10V, I =11A
DS GS
58
D
V
SD
I =11A, V =0
S GS
0.9
1.2
Package Dimensions
unit : mm
2078C
10.0
3.2
4.5
2.8
0.9
1.2
1.2
0.75
0.7
1
2 3
1 : Gate
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Switching Time Test Circuit
Unclamped Inductive Test Circuit
V
=200V
DD
L
≥50Ω
I
=8A
DUT
D
V
=15V
GS
R =25Ω
L
D
V
OUT
10V
0V
PW=1µs
D.C.≤0.5%
V
50Ω
DD
G
2SK3101LS
R
50Ω
GS
P.G
S
No.7910-2/5
2SK3101LS
I
-- V
I
-- V
GS
D
DS
D
25
20
15
10
30
25
20
15
10
V =10V
DS
C
°
c=
T
V
=6V
GS
5
0
5
0
0
1
2
3
4
5
6
7
DS
8
9
10
0
5
10
15
20
IT06562
Drain-to-Source Voltage, V
-- V
Gate-to-Source Voltage, V
GS
-- V
IT06561
R
(on) -- V
R (on) -- Tc
DS
DS
GS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
1.2
1.0
0.8
0.6
0.4
Tc=25°C
8A
0.2
0
0.3
0.2
4
6
8
10
12
14
16
18
20
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, V
-- V
Case Temperature, Tc -- °C
IT06563
IT06564
GS
y
fs -- I
V
(off) -- Tc
GS
D
2
7
6
5
4
3
2
1
V
=10V
=1mA
V =10V
DS
DS
I
D
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
0
--100
2
3
5
7
2
3
5
7
2
3
--50
0
50
100
150
200
1.0
10
IT06565
Case Temperature, Tc -- °C
Drain Current, I -- A
IT06566
D
I
-- V
SW Time -- I
D
F
SD
3
1000
2
V =0
GS
V
V
V
=200V
=15V
DD
GS
7
5
10
7
5
3
2
3
2
1.0
7
5
3
2
100
7
5
t
0.1
7
5
f
3
2
3
2
t (on)
d
0.01
7
5
3
2
10
7
5
0.1
0.001
0.2
0.4
0.6
0.8
1.0
1.2
IT06567
2
3
5
7
2
3
5
7
2
3
1.0
10
Diode Forward Voltage, V
SD
-- V
Drain Current, I -- A
D
IT07364
No.7910-3/5
2SK3101LS
Ciss, Coss, Crss -- V
V
-- Qg
DS
GS
10000
12
10
8
f=1MHz
7
5
V
=
200
A
V
DS
11
I
D
=
3
2
Ciss
1000
7
5
3
2
6
100
4
7
5
3
2
2
0
10
0
5
10
15
20
25
30
IT06568
0
5
10 15 20 25 30 35 40 45 50 55 60 65
Drain-to-Source Voltage, V
-- V
Total Gate Charge, Qg -- nC
IT06569
DS
A S O
P
-- Ta
D
100
2.5
2.0
1.5
1.0
7
I
=44A
DP
<1µs
5
3
2
I
=11A
D
10
7
5
3
2
1.0
5
3
Operation in this
area is limited by R (on).
3
2
DS
0.1
7
5
0.5
0
3
2
0.01
Tc=25°C
Single pulse
2
3
5
7
2
3
5
7
2
3
5
0
20
40
60
80
100
120
140
160
1.0
10
100
Drain-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
IT06570
IT06572
DS
P
-- Tc
D
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc -- °C
IT06571
No.7910-4/5
2SK3101LS
Note on usage : Be careful in handling the 2SK3101LS because it has no protection diode
between gate and source.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2004. Specifications and information herein are subject
to change without notice.
PS No.7910-5/5
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