2SK3099LS [SANYO]
N-Channel Silicon MOSFET General-Purpose Switching Device; N沟道MOSFET硅通用开关设备
| 型号： | 2SK3099LS |
| 厂家： | 
SANYO SEMICON DEVICE |
| 描述： | N-Channel Silicon MOSFET General-Purpose Switching Device |
| 文件： | 总3页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : EN8628
SANYO Sem iconductors
DATA S HEET
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
2SK3099LS
Features
• Low ON-resistance.
•
Low Qg.
•
Ultrahigh-Speed Switching Applications.
•
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Symbol
Conditions
Ratings
Unit
V
V
400
±30
9
DSS
GSS
Gate-to-Source Voltage
Drain Current (DC)
V
V
I
A
D
Drain Current (Pulse)
I
PW≤10µs, duty cycle≤1%
36
A
DP
2.0
35
W
W
°C
°C
mJ
A
Allowable Power Dissipation
P
D
Tc=25°C
Channel Temperature
Tch
150
Storage Temperature
Tstg
--55 to +150
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
E
92.6
9
AS
I
AV
*1 V =50V, L=2mH, I =9A
DD
AV
*2 L≤2mH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
400
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V
I
=1mA, V =0V
V
mA
nA
V
(BR)DSS
D GS
I
V
V
V
V
=320V, V =0V
GS
1.0
±100
4.0
DSS
DS
GS
DS
DS
I
= ±30V, V =0V
DS
GSS
V (off)
GS
=10V, I =1mA
3.0
2.9
D
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : K3099
yfs
(on)
=10V, I =6A
5.8
S
D
R
I
=6A, V =15V
0.43
0.55
Ω
DS
D GS
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N0806QB SY IM TC-00000315 No.8628-1/3
2SK3099LS
Continued from preceding page.
Ratings
typ
Parameter
Symbol
Conditions
Unit
min
max
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Ciss
Coss
Crss
V
V
V
=20V, f=1MHz
=20V, f=1MHz
=20V, f=1MHz
1150
350
150
20
pF
pF
pF
ns
ns
ns
ns
nC
V
DS
DS
DS
t (on)
d
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
t
r
35
Turn-OFF Delay Time
Fall Time
t (off)
d
85
t
45
f
Total Gate Charge
Diode Forward Voltage
Qg
V
=200V, V =10V, I =9A
GS
40
DS
D
V
SD
I =9A, V =0V
S GS
0.95
1.2
Note : Be careful in handling the 2SK3099LS because it has no protection diode between gate and source.
Package Dimensions
unit : mm (typ)
7509-002
4.5
10.0
3.2
2.8
0.9
1.2
1.2
0.7
0.75
1 : Gate
1
2
3
2 : Drain
3 : Source
2.55
2.55
SANYO : TO-220FI(LS)
Switching Time Test Circuit
Avalanche Resistance Test Circuit
V
=200V
DD
L
≥50Ω
DUT
I
=6A
D
V
=15V
GS
R =33.3Ω
L
D
V
OUT
15V
0V
V
50Ω
PW=10µs
D.C.≤0.5%
DD
G
R
2SK3099LS
GS
P. G
S
50Ω
No.8628-2/3
2SK3099LS
A S O
P
-- Ta
D
2.5
2.0
1.5
1.0
7
5
I
I
=36A
<10µs
DP
3
2
=9A
D
10
7
5
3
2
1.0
7
5
Operation in this
area is limited by R (on).
3
2
DS
0.1
7
0.5
0
5
3
2
0.01
Tc=25°C
Single pulse
2
3
5
7
2
3
5
7
2
3
5
7
0
20
40
60
80
100
120
140
160
1.0
10
100
Drain-to-Source Voltage, V
-- V
IT11684
Ambient Temperature, Ta -- °C
IT11682
DS
P
-- Tc
E
-- Ta
D
AS
40
35
30
25
20
15
10
120
100
80
60
40
20
0
5
0
0
20
40
60
80
100
120
140
160
0
25
50
75
100
125
150
175
IT10478
Case Temperature, Tc -- °C
IT11685
Ambient Temperature, Ta -- °C
Note on usage : Since the 2SK3099LS is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
PS No.8628-3/3
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