2SC4853A [SANYO]

Low-Voltage, Low-Current High-Frequency Amplifier Applications; 低电压,低电流高频放大器的应用
2SC4853A
型号: 2SC4853A
厂家: SANYO SEMICON DEVICE    SANYO SEMICON DEVICE
描述:

Low-Voltage, Low-Current High-Frequency Amplifier Applications
低电压,低电流高频放大器的应用

晶体 放大器 晶体管 光电二极管
文件: 总5页 (文件大小:56K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Ordering number : ENA1076  
SANYO Sem iconductors  
DATA S HEET  
NPN Epitaxial Planar Silicon Transistor  
Low-Voltage, Low-Current  
High-Frequency Amplifier Applications  
2SC4853A  
Features  
Low-voltage, low-current operation : f =5GHz typ.  
T
(V =1V, I =1mA) :S21e2=7dB typ (f=1GHz).  
CE  
C
: NF=2.6dB typ (f=1GHz).  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
V
V
12  
6
CBO  
CEO  
EBO  
V
1.5  
15  
V
I
mA  
mW  
°C  
°C  
C
Collector Dissipation  
P
90  
C
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
1.0  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
I
I
V
V
V
=5V, I =0A  
μA  
μA  
CBO  
CB  
EB  
CE  
E
=1V, I =0A  
10  
EBO  
C
h
=1V, I =1mA  
60*  
270*  
FE  
C
* : The 2SC4853A is classified by 1mA h as follows :  
FE  
Marking  
Rank  
CN3  
3
CN4  
4
CN5  
5
h
FE  
60 to 120  
90 to 180  
135 to 270  
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to  
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,  
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be  
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace  
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety  
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case  
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee  
thereof. If you should intend to use our products for applications outside the standard applications of our  
customer who is considering such use and/or outside the scope of our intended standard applications, please  
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our  
customer shall be solely responsible for the use.  
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate  
the performance, characteristics, and functions of the described products in the independent state, and are not  
guarantees of the performance, characteristics, and functions of the described products as mounted in the  
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent  
device, the customer should always evaluate and test devices mounted in the customer  
equipment.  
's products or  
www.semiconductor-sanyo.com/network  
D2408AB MS IM TC-00001797  
No. A1076-1/5  
2SC4853A  
Continued from preceding page.  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
Unit  
min  
max  
Gain-Bandwidth Product  
Output Capacitance  
f
V
CE  
V
CB  
V
CE  
V
CE  
V
CE  
V
CE  
=1V, I =1mA  
C
5
GHz  
pF  
T
Cob  
=1V, f=1MHz  
0.6  
7
1.0  
S21e 21  
S21e 22  
=1V, I =1mA, f=1GHz  
C
4.5  
dB  
dB  
dB  
dB  
Forward Transfer Gain  
Noise Figure  
=2V, I =3mA, f=1GHz  
C
10.5  
2.6  
1.9  
NF1  
NF2  
=1V, I =1mA, f=1GHz  
4.5  
C
=2V, I =3mA, f=1GHz  
C
Package Dimensions  
unit : mm (typ)  
7023-009  
0.3  
0.15  
3
0 to 0.1  
1
2
0.65 0.65  
0.3  
0.6  
0.9  
2.0  
1 : Base  
2 : Emitter  
3 : Collector  
SANYO : MCP  
I
-- V  
h
FE  
-- I  
C
CE  
C
20  
18  
16  
14  
12  
10  
8
1000  
7
5
3
2
100  
7
5
6
3
2
30μA  
15μA  
4
2
0
I =0μA  
B
5
10  
0.1  
0
1
2
3
4
6
2
3
5
7
2
3
5
7
2
3
1.0  
10  
Collector Current, I -- mA  
Collector-to-Emitter Voltage, V  
-- V IT14232  
IT14233  
C
CE  
Cob -- V  
CB  
f
-- I  
T
C
2
2
f=1MHz  
10  
7
1.0  
7
5
5
3
2
3
2
1.0  
7
0.1  
5
7
5
3
2
3
5
7
2
3
5
7
2
5
3
5
3
5
7
2
7
2
7
2
0.1  
1.0  
10  
ITR07582  
1.0  
10  
Collector-to-Base Voltage, V  
-- V ITR07583  
Collector Current, I -- mA  
CB  
C
No. A1076-2/5  
2SC4853A  
2
S21e  
-- I  
C
NF -- I  
C
10  
8
14  
12  
10  
8
f=1GHz  
f=1GHz  
6
6
4
4
2
0
2
0
2
2
3
5
7
3
5
7
2
2
3
5
7
2
3
5
7
1.0  
1.0  
10  
Collector Current, I -- mA  
ITR07584  
Collector Current, I -- mA  
C
ITR07585  
C
2
P
-- Ta  
S21e , NF -- V  
C
CE  
14  
12  
10  
8
100  
90  
80  
70  
60  
50  
40  
30  
20  
f=1GHz  
2
S21e  
1mA  
6
4
I =1mA  
C
NF  
2
0
10  
0
3mA  
0
4
1
2
3
5
6
7
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
Collector-to-Emitter Voltage, V  
CE  
-- V ITR07586  
IT14234  
No. A1076-3/5  
2SC4853A  
S Parameters  
S11e  
S21e  
f=200MHz to 2000MHz(200MHz Step)  
f=200MHz to 2000MHz(200MHz Step)  
90°  
j50  
120°  
60°  
j25  
j100  
j150  
j200  
j250  
150°  
30°  
j10  
8
25  
2
4
6
50  
100  
10  
150 250  
180°  
0
0
V
=2V  
CE  
I =3mA  
C
--j250  
--j200  
--j10  
--30°  
--150°  
--j150  
--j100  
--j25  
--60°  
--120°  
--j50  
--90°  
ITR07588  
ITR07589  
S12e  
S22e  
f=200MHz to 2000MHz(200MHz Step)  
f=200MHz to 2000MHz(200MHz Step)  
90°  
j50  
60°  
120°  
j25  
j100  
j150  
150°  
30°  
j200  
j250  
j10  
0.2  
0.5  
20  
0.05 0.10 0.15 0.20  
10  
100  
0
180°  
0
--j250  
--j200  
--j10  
--30°  
--150°  
--j150  
--j100  
--j25  
--60°  
--120°  
--90°  
--j50  
ITR07590  
ITR07591  
No. A1076-4/5  
2SC4853A  
S Parameters (Common emitter)  
V
=1V, I =1mA, Z =50Ω  
CE  
C
O
Freq(MHz)  
200  
S
S11  
--17.9  
--33.7  
--48.0  
--60.5  
--73.5  
--84.7  
--96.2  
--106.4  
--117.3  
--127.0  
S
S21  
159.6  
143.7  
129.9  
117.7  
106.2  
96.3  
S
S12  
77.1  
66.6  
58.1  
50.9  
45.4  
40.9  
37.6  
35.3  
33.8  
32.9  
S
22  
S22  
--12.2  
--22.7  
--31.7  
--39.6  
--46.0  
--51.7  
--56.5  
--60.6  
--64.3  
--67.5  
11  
21  
12  
0.940  
0.863  
0.778  
0.698  
0.608  
0.546  
0.470  
0.418  
0.388  
0.354  
3.228  
2.983  
2.732  
2.469  
2.320  
2.106  
1.977  
1.826  
1.700  
1.615  
0.058  
0.107  
0.145  
0.173  
0.195  
0.210  
0.129  
0.224  
0.230  
0.234  
0.972  
0.914  
0.844  
0.773  
0.717  
0.668  
0.624  
0.590  
0.562  
0.546  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
2000  
87.1  
78.8  
72.2  
65.9  
V
=2V, I =3mA, Z =50Ω  
CE  
C
O
Freq(MHz)  
200  
S
S11  
--30.6  
S
S21  
149.3  
128.5  
113.6  
101.9  
92.7  
S
S12  
71.4  
60.6  
55.1  
52.5  
51.4  
50.9  
50.9  
51.0  
51.1  
51.0  
S
22  
S22  
--18.3  
--30.2  
--37.1  
--41.9  
--45.7  
--49.2  
--52.3  
--55.6  
--59.0  
--61.8  
11  
21  
12  
0.839  
0.672  
0.536  
0.431  
0.360  
0.310  
0.265  
0.242  
0.228  
0.217  
7.428  
6.016  
4.908  
4.073  
3.494  
3.033  
2.694  
2.422  
2.205  
2.061  
0.050  
0.083  
0.105  
0.121  
0.135  
0.150  
0.162  
0.175  
0.189  
0.205  
0.916  
0.778  
0.672  
0.597  
0.548  
0.514  
0.492  
0.475  
0.461  
0.456  
400  
--53.7  
600  
--71.7  
800  
--85.7  
1000  
1200  
1400  
1600  
1800  
2000  
--99.0  
--111.4  
--122.6  
--134.7  
--148.0  
--157.2  
84.4  
77.4  
70.9  
65.9  
60.8  
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using  
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.  
products described or contained herein.  
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all  
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or  
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise  
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt  
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not  
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural  
design.  
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are  
controlled under any of applicable local export control laws and regulations, such products may require the  
export license from the authorities concerned in accordance with the above law.  
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,  
without the prior written consent of SANYO Semiconductor Co.,Ltd.  
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the  
SANYO Semiconductor Co.,Ltd. product that you intend to use.  
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed  
for volume production.  
Upon using the technical information or products described herein, neither warranty nor license shall be granted  
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third  
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s  
intellectual property rights which has resulted from the use of the technical information and products mentioned  
above.  
This catalog provides information as of December, 2008. Specifications and information herein are subject  
to change without notice.  
PS No. A1076-5/5  

相关型号:

2SC4853A-4-TL-E

射频晶体管,NPN 单 MCP,6 V,15 mA,fT = 5 GHz
ONSEMI

2SC4853A_12

Low-Voltage, Low-Current High-Frequency Amplifi er Applications
SANYO

2SC4854

Low-Voltage, Low-Current High-Frequency Amp Applications
SANYO

2SC4854-3

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | TO-236AB
ETC

2SC4854-4

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | TO-236AB
ETC

2SC4854-5

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | TO-236AB
ETC

2SC4855

Low-Voltage, Low-Current & High-Frequency Amp Applications
SANYO

2SC4855-3

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | SOT-143R
ETC

2SC4855-4

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | SOT-143R
ETC

2SC4855-5

TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 15MA I(C) | SOT-143R
ETC

2SC4856

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 80MA I(C) | SC-70
ETC

2SC4857

TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 80MA I(C) | TO-236
ETC