QCA50AA100 [SANREX]
TRANSISTOR MODULE; 晶体管模块
| 型号： | QCA50AA100 |
| 厂家： | 
SANREX CORPORATION |
| 描述： | TRANSISTOR MODULE |
| 文件： | 总4页 (文件大小：798K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TRANSISTOR MODULE
QCA50AA100
UL;E76102 M
QCA50AA100 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
IC 50A, VCEX 1000V
Low saturation voltage for higher efficiency.
FE
High DC current gain h
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Tj 25
Ratings
Symbol
Item
Conditions
Unit
QCA50AA100
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1000
1000
7
V
V
VBE
2V
V
50
A
A
A
W
Reverse Collector Current
Base Current
50
IC
B
I
3
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
400
TC 25
j
T
40
40
150
125
Tstg
VISO
A.C.1minute
2500
V
Mounting M6
TerminaM5
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
4.7 48
2.7 28
210
Mounting
Torque
N m
f B
Mass
g
Electrical Characteristics
Tj 25
Ratings
Symbol
Item
Conditions
Unit
Min.
Max.
1.0
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
mA
mA
V
CB
V
1000V
200
EB
V
7V
CEX SUS
V
Collector Emitter Sustaning Voltage
1000
75
B
I
Ic 10A
Ic 50A
Ic 50A
Ic 50A
Ic 50A
3A
2.8V
5V
CE
V
V
FE
h
DC Current Gain
100
CE
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
2.5
3.5
V
V
B
I
I
1A
1A
BE(sat)
ton
ts
V
B
2.5
Switching
Storage Time
Time
Vcc 600V Ic 50A
15.0
3.0
s
B1
B2
I
1A
I
1A
tf
Fall Time
ECO
V
Collector-Emitter Reverse Voltage
1.8
V
Ic 50A
Transistor part
Diode part
0.31
1.2
Thermal Impedance
(junction to case)
Rth(j-c)
/W
5
QCA50AA100
6
TRANSISTOR MODULE
QCA50AA120
UL;E76102 M
QCA50AA120 is a dual Darlington power transistor module which has series- connected
high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast
recovery diode. The mounting base of the module is electrically isolated from
semiconductor elements for simple heatsink construction,
C
CEX
I
50A, V
1200V
Low saturation voltage for higher efficiency.
FE
High DC current gain h
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Tj 25
Ratings
Symbol
Item
Conditions
Unit
QCA50AA120
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1200
1200
10
V
V
VBE
2V
V
50
A
A
A
W
Reverse Collector Current
Base Current
50
IC
B
I
3
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
400
TC 25
j
T
40
40
150
125
Tstg
VISO
A.C.1minute
2500
V
Mounting M6
Terminal M5
Recommended Value 2.5 3.9 25 40
Recommended Value 1.5 2.5 15 25
Typical Value
4.7 48
2.7 28
210
Mounting
Torque
N m
f B
Mass
g
Electrical Characteristics
Tj 25
Ratings
Symbol
Item
Conditions
Unit
Min.
Max.
1.0
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
mA
mA
V
CB
V
1200V
10V
B
300
EB
V
CEX SUS
V
1200
75
Ic 10A
Ic 50A
Ic 50A
Ic 50A
I
2A
5V
FE
h
CE
V
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
3.0
3.5
V
V
B
I
1A
1A
BE(sat)
ton
ts
V
B
I
2.5
Switching
Storage Time
Time
Vcc 600V Ic 50A
15.0
3.0
s
B1
B2
I
1A
I
1A
tf
Fall Time
ECO
V
Collector-Emitter Reverse Voltage
1.8
V
Ic 50A
Transistor part
Diode part
0.31
1.2
Thermal Impedance
(junction to case)
Rth(j-c)
/W
7
QCA50AA120
8
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