QCA150AA100 [SANREX]
TRANSISTOR MODULE; 晶体管模块型号: | QCA150AA100 |
厂家: | SANREX CORPORATION |
描述: | TRANSISTOR MODULE |
文件: | 总4页 (文件大小:817K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TRANSISTOR MODULE
QCA150AA100
UL;E76102 M
QCA150AA100 is a dual Darlington power transistor module which has series-
connected high speed, high power Darlington transistors. Each transistor has a reverse
paralleled fast recovery diode. The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
IC 150A, VCEX 1000V
Low saturation voltage for higher efficiency.
FE
High DC current gain h
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Tj 25
Ratings
Symbol
Item
Conditions
Unit
QCA150AA100
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1000
1000
7
V
V
VBE
2V
V
150
150
8
A
A
A
W
Reverse Collector Current
Base Current
IC
B
I
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
1000
TC 25
j
T
40
40
150
125
Tstg
VISO
A.C.1minute
2500
V
Mounting M6
TerminaM6
Recommended Value 2.5 3.9 25 40
Recommended Value 2.5 3.9 25 40
Typical Value
4.7 48
4.7 48
540
Mounting
Torque
N m
f B)
(
Mass
g
Electrical Characteristics
Tj 25
Unit
Ratings
Symbol
Item
Conditions
Min.
Max.
1.0
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
mA
mA
V
CB
V
1000V
7V
400
EB
V
CEX SUS
V
Collector Emitter Sustaning Voltage
1000
75
B2
I
Ic 30A
5A
CE
CE
Ic 150A
Ic 150A
Ic 150A
Ic 150A
V
2.8V
5V
FE
h
DC Current Gain
100
V
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
2.50
3.50
3.00
15.00
3.00
1.80
0.125
0.6
V
V
B
I
I
3A
3A
BE(sat)
ton
ts
V
B
Switching
Storage Time
Time
Vcc 600V Ic 150A
s
B1
B2
I
3A
I
3A
tf
Fall Time
ECO
V
Collector-Emitter Reverse Voltage
V
Ic 150A
Transistor part
Diode part
Thermal Impedance
(junction to case)
Rth(j-c)
/W
23
QCA150AA100
24
TRANSISTOR MODULE
QCA150AA120
UL;E76102 M
QCA150AA120 is a dual Darlington power transistor module which has series-
connected high speed, high power Darlington transistors. Each transistor has a reverse
paralleled fast recovery diode. The mounting base of the module is electrically isolated
from semiconductor elements for simple heatsink construction,
IC 150A, VCEX 1200V
Low saturation voltage for higher efficiency.
FE
High DC current gain h
Isolated mounting base
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit
A
Maximum Ratings
Tj 25
Ratings
Symbol
Item
Conditions
Unit
QCA150AA120
VCBO
VCEX
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
1200
1200
10
V
V
VBE
2V
V
150
150
8
A
A
A
W
Reverse Collector Current
Base Current
IC
B
I
T
P
Total power dissipation
Junction Temperature
Storage Temperature
Isolation Voltage
1000
TC 25
j
T
40
40
150
125
Tstg
VISO
A.C.1minute
2500
V
Mounting M6
TerminaM6
Recommended Value 2.5 3.9 25 40
Recommended Value 2.5 3.9 25 40
Typical Value
4.7 48
4.7 48
470
Mounting
Torque
N m
f B)
(
Mass
g
Electrical Characteristics
Tj 25
Unit
Ratings
Symbol
Item
Conditions
Min.
Max.
2.00
600
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
Collector Emitter Sustaning Voltage
DC Current Gain
mA
mA
V
CB
V
1200V
10V
EB
V
CEX SUS
V
1200
75
B2
I
Ic 30A
6A
5V
FE
h
CE
Ic 150A
Ic 150A
Ic 150A
V
VCE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
On Time
3.00
3.50
3.00
15.00
3.00
1.80
0.125
0.6
V
V
B
I
3A
3A
BE(sat)
ton
ts
V
B
I
Switching
Storage Time
Time
Vcc 600V Ic 150A
s
B1
B2
I
3A
I
3A
tf
Fall Time
ECO
V
Collector-Emitter Reverse Voltage
V
Ic 150A
Transistor part
Diode part
Thermal Impedance
(junction to case)
Rth(j-c)
/W
25
QCA150AA120
26
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