QCA150AA100 [SANREX]

TRANSISTOR MODULE; 晶体管模块
QCA150AA100
型号: QCA150AA100
厂家: SANREX CORPORATION    SANREX CORPORATION
描述:

TRANSISTOR MODULE
晶体管模块

晶体 晶体管
文件: 总4页 (文件大小:817K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TRANSISTOR MODULE  
QCA150AA100  
UL;E76102 M  
QCA150AA100 is a dual Darlington power transistor module which has series-  
connected high speed, high power Darlington transistors. Each transistor has a reverse  
paralleled fast recovery diode. The mounting base of the module is electrically isolated  
from semiconductor elements for simple heatsink construction,  
IC 150A, VCEX 1000V  
Low saturation voltage for higher efficiency.  
FE  
High DC current gain h  
Isolated mounting base  
Applications  
Motor Control VVVF , AC/DC Servo, UPS,  
Switching Power Supply, Ultrasonic Application  
Unit  
A
Maximum Ratings  
Tj 25  
Ratings  
Symbol  
Item  
Conditions  
Unit  
QCA150AA100  
VCBO  
VCEX  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
1000  
1000  
7
V
V
VBE  
2V  
V
150  
150  
8
A
A
A
W
Reverse Collector Current  
Base Current  
IC  
B
I
T
P
Total power dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
1000  
TC 25  
j
T
40  
40  
150  
125  
Tstg  
VISO  
A.C.1minute  
2500  
V
Mounting M6  
TerminaM6  
Recommended Value 2.5 3.9 25 40  
Recommended Value 2.5 3.9 25 40  
Typical Value  
4.7 48  
4.7 48  
540  
Mounting  
Torque  
N m  
f B)  
(
Mass  
g
Electrical Characteristics  
Tj 25  
Unit  
Ratings  
Symbol  
Item  
Conditions  
Min.  
Max.  
1.0  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
mA  
mA  
V
CB  
V
1000V  
7V  
400  
EB  
V
CEX SUS  
V
Collector Emitter Sustaning Voltage  
1000  
75  
B2  
I
Ic 30A  
5A  
CE  
CE  
Ic 150A  
Ic 150A  
Ic 150A  
Ic 150A  
V
2.8V  
5V  
FE  
h
DC Current Gain  
100  
V
VCE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
On Time  
2.50  
3.50  
3.00  
15.00  
3.00  
1.80  
0.125  
0.6  
V
V
B
I
I
3A  
3A  
BE(sat)  
ton  
ts  
V
B
Switching  
Storage Time  
Time  
Vcc 600V Ic 150A  
s
B1  
B2  
I
3A  
I
3A  
tf  
Fall Time  
ECO  
V
Collector-Emitter Reverse Voltage  
V
Ic 150A  
Transistor part  
Diode part  
Thermal Impedance  
(junction to case)  
Rth(j-c)  
/W  
23  
QCA150AA100  
24  
TRANSISTOR MODULE  
QCA150AA120  
UL;E76102 M  
QCA150AA120 is a dual Darlington power transistor module which has series-  
connected high speed, high power Darlington transistors. Each transistor has a reverse  
paralleled fast recovery diode. The mounting base of the module is electrically isolated  
from semiconductor elements for simple heatsink construction,  
IC 150A, VCEX 1200V  
Low saturation voltage for higher efficiency.  
FE  
High DC current gain h  
Isolated mounting base  
Applications  
Motor Control VVVF , AC/DC Servo, UPS,  
Switching Power Supply, Ultrasonic Application  
Unit  
A
Maximum Ratings  
Tj 25  
Ratings  
Symbol  
Item  
Conditions  
Unit  
QCA150AA120  
VCBO  
VCEX  
VEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
1200  
1200  
10  
V
V
VBE  
2V  
V
150  
150  
8
A
A
A
W
Reverse Collector Current  
Base Current  
IC  
B
I
T
P
Total power dissipation  
Junction Temperature  
Storage Temperature  
Isolation Voltage  
1000  
TC 25  
j
T
40  
40  
150  
125  
Tstg  
VISO  
A.C.1minute  
2500  
V
Mounting M6  
TerminaM6  
Recommended Value 2.5 3.9 25 40  
Recommended Value 2.5 3.9 25 40  
Typical Value  
4.7 48  
4.7 48  
470  
Mounting  
Torque  
N m  
f B)  
(
Mass  
g
Electrical Characteristics  
Tj 25  
Unit  
Ratings  
Symbol  
Item  
Conditions  
Min.  
Max.  
2.00  
600  
ICBO  
IEBO  
Collector Cut-off Current  
Emitter Cut-off Current  
Collector Emitter Sustaning Voltage  
DC Current Gain  
mA  
mA  
V
CB  
V
1200V  
10V  
EB  
V
CEX SUS  
V
1200  
75  
B2  
I
Ic 30A  
6A  
5V  
FE  
h
CE  
Ic 150A  
Ic 150A  
Ic 150A  
V
VCE(sat)  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
On Time  
3.00  
3.50  
3.00  
15.00  
3.00  
1.80  
0.125  
0.6  
V
V
B
I
3A  
3A  
BE(sat)  
ton  
ts  
V
B
I
Switching  
Storage Time  
Time  
Vcc 600V Ic 150A  
s
B1  
B2  
I
3A  
I
3A  
tf  
Fall Time  
ECO  
V
Collector-Emitter Reverse Voltage  
V
Ic 150A  
Transistor part  
Diode part  
Thermal Impedance  
(junction to case)  
Rth(j-c)  
/W  
25  
QCA150AA120  
26  

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