PD160F80 [SANREX]
THYRISTOR MODULE; 晶闸管模块
| 型号： | PD160F80 |
| 厂家： | 
SANREX CORPORATION |
| 描述： | THYRISTOR MODULE |
| 文件： | 总2页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
(
)
PD,PE,KK
PK
160F
UL:E76102（M）
Power Thyristor/Diode Module PK160F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. Two elements in a package and electrically
isolated mounting base make your mechanical design easy.
92
26
12
26
7
4-φ6（M5）�
●
T(AV)
T(RMS)
160A, I
TSM
250A, I
I
5500A
● di/dt 200 A/μs
● dv/dt 500V/μs
18
2
R8.0
K2
G2
K2
G2
M8×14
（Applications）
Various rectifiers
AC/DC motor drives
Heater controls
Light dimmers
3
2
1
K1G1
（A2）�
（K2）�
3
2
1
A1K2
♯110TAB
（2.8.0.5T）�
K1
（K2）�
（A2）�
A1K2
PK
PE
K2
2
K2
G2
3
2
1
1
1
K1G1
（A2）�
（K2）�
K1G1
（A2）�
A1K2
（A1）�
80±0.3
Static switches
PD
KK
Unit：
A
■Maximum Ratings
Ratings
PK160F120
PK160F40
PD160F40
PE160F40
KK160F40
PK160F80
PD160F80
PE160F80
KK160F80
PK160F160
PD160F160
PE160F160
KK160F160
Symbol
Item
Unit
PD160F120
PE160F120
KK160F120
RRM
V
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
＊
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
RSM
V
DRM
V
Symbol
Item
Conditions
Ratings
160
Unit
A
T(AV) F(AV)
I
, I
＊Average On-State Current
＊R.M.S. On-State Current
＊Surge On-State Current
Single phase, half wave, 180°conduction, Tc：87℃
Single phase, half wave, 180°conduction, Tc：87℃
／cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
T(RMS) F(RMS)
I
, I
250
A
1
TSM FSM
I
, I
A
5000 5500
/
2
2
2
2
I t
A S
＊I t
1.25×105
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G（AV）
P
3
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
V
RGM
V
5
V
1
G
D
DRM
G
200
di／dt
I ＝100mA，Tj＝25℃，V ＝
／
V
，dI dt＝0.1A μs
A μs
/
/
/
2
ISO
V
A.C.1minute
2500
V
℃
℃
＊
＊
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
－40 to ＋125
－40 to ＋125
2.7（28）
11（115）
510
Tstg
＊Storage Temperature
Mounting（M5） Recommended 1.5-2.5（15-25）
Terminal（M8） Recommended 8.8-10 （90-105）
Mounting
Torque
N･ｍ
（㎏f･B）
g
Mass
■Electrical Characteristics
Symbol
DRM
I
Item
Conditions
at V , single phase, half wave, Tj＝125℃
Ratings
50
Unit
mA
mA
V
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
RRM
I
DRM
50
＊
＊
at V , single phase, half wave, Tj＝125℃
TM
V
1.42
On-State Current 500A, Tj＝25℃ Inst. measurement
GT
GT
T
D
I ／V
Tj＝25℃，I ＝1A，V ＝6V
100 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj＝125℃，V ＝／V
I ＝160A，I ＝100mA，Tj＝25℃，V ＝
Tj＝125℃, V ＝／V , Exponential wave.
2
1
tgt
T
G
D
DRM
G
／
V
，dI dt＝0.1A μs
μs
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv／dt
V μs
/
3
H
I
mA
mA
Tj＝25℃
Tj＝25℃
Junction to case
L
I
Lutching Current, typ.
100
0.18
Rth（j-c） ＊Thermal Impedance, max.
℃ W
/
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
０�
１００� ２００� ３００� ４００� ０�２０�４０�６０�８０１００�１２０�
(
PK PD,PE,KK 160F
)
Gate Characteristics
On-State Voltage max
２�
２�
Peak Forward Gate Voltage（10V）�
１�
１０
3
１０
５�
５�
２�
２�
０�
１０
2
１０
５�
５�
125℃�25℃� －30℃�
Maximum Gate Voltage that will not trigger any unit
２�
２�
－
１�
１０１�
１０
１�
２�
３�
０．５�
１．０�
１．５� � ２．０�
２．５�
３．０�
１０
２�
５� １０
２�
５� １０
２�
５�
Gate Curren（t mA）�
On-State Voltage（V）�
Average On-State Current Vs Power Dissipation�
（Single phase half wave）
Average On-State Current Vs Maximum Allowable�
Case Temperature（Single phase half wave）
１３０�
３５０�
Per one element
Per one element
D.C.
１２０�
１１０�
１００�
３００�
２５０�
２００�
2
360。�
θ＝180゜�
θ＝120゜�
: Conduction Angle
θ＝90゜�
θ＝60゜�
９０�
８０�
７０�
６０�
５０�
１５０�
１００�
2
θ＝30゜�
360。�
: Conduction Angle
D.C.
θ＝60゜�
θ＝90゜�θ＝120゜�θ＝180゜�
θ＝30゜�
５０�
０�
３００�
０�
５０�
１００�
１５０� ２００� ２５０�
３００�
０�
５０�
１００�
１５０� ２００� ２５�０�
Average On-State Curren（t A）�
Average On-State Curren（t A）�
Surge On-State Current Rating�
（Non-Repetitive）�
Transient Thermal Impedance
０．２�
６０００�
５０００�
４０００�
３０００�
Per one element
Ｔｊ=２５℃ start
Per one element
Junction to case
60Hz
50Hz
０．１�
２０００�
１０００�
０�
０� ０�
１０
－
－
－
０�
1
１０３�
１０２�
１０１�
１０
１０
１�
２�
２�
５�
１０
２�
５�
１０
�
Time t（sec）�
Time（cycles）�
B６；Six pulse bridge connection�
Ｗ３；Three phase�
Output Current
W１；Bidirectional connection
bidiretional connection
B２；Two Pluse bridge connection
W3
Conduction Angle 180゜�
１２００�
B6
Id（Ar.m.s.）�
Id（Aav.）�
９０�
Id（Aav.）�
Id（Ar.m.s.）�
１０００�
８００�
６００�
４００�
２００�
Rth:0.5℃/W
B2
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W
Rth:0.1℃/W
Rth:0. 0 5℃/W
１００�
１１０�
９０�
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.5℃/W
Rth:0.4℃/W
Rth:0.3℃/W
Rth:0.2℃/W １００�
W1
Rth:0.1℃/W
Rth:0. 0 5℃/W
Rth:0.2℃/W
９０�
Rth:0.1℃/W
Rth:0. 0 5℃/W
１００�
１１０�
１２０�
１２５�
１１０�
１２０�
１２５�
１２０�
１２５�
０� ２０�４０�６０�８０�１００�１２０�
０� ２０�４０�６０�８０�１００�２０�
Output Curren（t A）�
Ambient Temperature（℃）�
Ambient Temperature（℃）�Ambient Temperature（℃）�
相关型号：
©2020 ICPDF网 联系我们和版权申明