PD130FG120 [SANREX]
Silicon Controlled Rectifier, 130000mA I(T), 1200V V(RRM);
| 型号： | PD130FG120 |
| 厂家： | 
SANREX CORPORATION |
| 描述： | Silicon Controlled Rectifier, 130000mA I(T), 1200V V(RRM) 栅 栅极 |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
(
)
PD,PE
PK 130FG
UL;E76102（M）
Power Thyristor/Diode Module PK130FG series are designed for various rectifier
circuits and power controls. For your circuit application, following internal connections
and wide voltage ratings up to 1600V are available. and electrically isolated mounting
base make your mechanical design easy.
92．０�
2０．０�2０．０�2０．０�
１７．５�
２-φ6 ．０�
●
●
T(AV)
T(RMS)
TSM
205A, I
I
130A, I
3500A
di/dt 100A/μs
Internal Configurations
● dv/dt 1000V/μs
M５× 1０�
２．８�
K2
G2
4-＃１１０TAB
（Applications）
Various rectifiers
K2
G2
3
2
1
K1G1
（A2）�
（K2）�
3
2
1
A1K2
K1
（A2）�
（K2）�
A1K2
NAME PLATE
AC/DC motor drives
Heater controls
Light dimmers
PK
PE
８０．０±０．２�
K2
3
2
1
K1G1
（A2）�
（K2）�
A1K2
Static switches
Unit：
A
PD
■Maximum Ratings
（Tj＝25℃ unless otherwise specified）
Ratings
Symbol
Item
Unit
PK130FG40
PK130FG80
PK130FG120
PK130FG160
1600
VRRM
VRSM
VDRM
400
480
400
800
960
800
1200
1300
1200
V
V
V
＊
＊
＊
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-state Voltage
1700
1600
Ratings
Symbol
Item
Conditions
Unit
A
T（AV）
I
130
＊Average On-state Current
＊R.M.S. On-state Current
＊Surge On-state Current
Single phase, half wave, 180°conduction, Tc＝83℃
T（RMS）
I
205
A
Single phase, half wave, 180°conduction, Tc＝83℃
1
TSM
I
Z
A
／ Cycle, 50/60H , Peak Value, non-repetitive
3200/3500
2
2
2
2
I t
Value for one cycle surge current
51040
A S
＊I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
G（AV）
P
1
FGM
I
3
10
A
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-state Current
V
RGM
V
5
V
1
G
D
DRM
G
100
di/dt
I ＝100mA，V ＝／V ，di /dt＝0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
＊Isolation Breakdown Voltage（R.M.S.）
Tj
＊
Operating Junction Temperature
－40 to ＋125
－40 to ＋125
2.7（28）
2.7（28）
170
℃
℃
Tstg
＊Storage Temperature
Mounting（M5） Recommended Value 1.5-2.5（15-25）
Mounting
Torque
N･m
（㎏f･B）
Termina
（l M5） Recommended Value 1.5-2.5（15- 25）
Mass
Typical Value
g
■Electrical Characteristics
Ratings
35
Symbol
Item
Conditions
Unit
mA
mA
V
DRM
I
Repetitive Peak off-state Current,max
Repetitive Peak Reverse Current,max
D
DRM
Tj＝125℃，V ＝V
RRM
I
D
DRM
35
＊
Tj＝125℃，V ＝V
TM
V
T
1.6
＊Gn-state Voltage,max
Gate Trigger Current,max
Gate Trigger Voltage,max
Gate Non-Trigger Voltage,min
Critical Rate of Rise of off-state Voltage,min
I ＝390A
GT
I
D
T
50
mA
V
V ＝6V，I ＝1A
GT
V
D
T
3
V ＝6V，I ＝1A
1
GD
V
D
DRM
0.25
1000
0.20
V
Tj＝125℃，V ＝
／
2V
2
D
DRM
dv/dt
Tj＝125℃，V ＝／V
V/μs
℃/W
3
Junction to case
Rth（j-c）＊Thermal Impedance,max
＊mark：Thyristor and Diode part. No mark：Thyristor part
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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(
PK PD,PE 130FG
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Gate Characteristics
On-State Voltage max
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Junction to Case
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