DFA100BA160 [SANREX]
THREE PHASE DIODE + THYRISTOR; 三相二极管+晶闸管型号: | DFA100BA160 |
厂家: | SANREX CORPORATION |
描述: | THREE PHASE DIODE + THYRISTOR |
文件: | 总3页 (文件大小:120K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
THREE PHASE DIODE+THYRISTOR
DFA100BA80/160
SanRex Power Module, DFA100BA, is complex isolated
module which is designed for rash current circuit.
80�
It contains six diodes connected in a three phase bridge
configuration, and a thyristor connected to a direct current line.
32�
30�
20�
0
2
1
●
This Module is designed very compactly. Because
diode module and thyristor put together.
●
This Module is also isolated type between electorode
5
20� 4 20� 3
6 7
0
4.0�
29�
terminal and mounting base. So you can put this
Module and other one together in a same fin.
(Application)
93.5M A X
1
5
4
3
● Inverter for AC or DC motor control, Current stabilized
power supply, Switching power supply.
Unit:㎜
2
●DIODE
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DFA100BA80
DFA100BA160
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
800
960
1600
1700
V
V
Symbol
ID
Item
Conditions
Three phase full wave, Tc=98℃
Ratings
100
Unit
A
Output Current (D.C.)
Surge forward current
Operating Junction Temperaturea
Storage Temperature
Isolation Breakdown Voltage (R.M.S.)
IFSM
Tj
Z
A
1cycle, 50/60H , peak value, non-repetitive
1186/1300
-40 to +150
-40 to +125
2500
℃
℃
V
Tstg
VISO
A.C. 1minute
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Terminal(M5) Recommended Value 1.5-2.5(15-25)
Typical Value
2.7(28)
2.7(28)
150
Mounting
Torque
N・m
(kgf・B)
Mass
g
■Electrical Characteristics
Symbol
IRRM
Item
Conditions
Ratings
12
Unit
mA
Repetitive Peak Reverse Current,max.
Forward Voltage Drop,max.
Thermal Impedance, max.
Thermal Impedance, max.
j
R
RRM
T =150℃,V =V
VFM
F
1.30
0.20
0.10
V
Tj=25℃,I =100A,Inst. measurement
Junction to Case(TOTAL)
Case to Fin
Rth(j-c)
Rth(c-f)
℃/W
℃/W
SanRex
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA100BA80/160
●THYRISTOR
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DFA100BA80
DFA100BA160
1600
VRRM
VRSM
VDRM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-State Voltage
800
960
800
V
V
V
1700
1600
Symbol
Item
Conditions
Singl phase half wave. 180°conduction, Tc=92℃
Ratings
Unit
A
T(AV)
I
Average On-State Current
Surge On-State Current
100
1186/1300
7030
TSM
I
Z
A
1cycle, 50/60H , peak value, non-repetitive
2
2
2
I t
I t
A S
1
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
G
D
DRM
G
150
di/dt
I =100mA,V =/V ,di /dt=0.1A/μs
A/μs
V
2
ISO
V
A.C. 1minute
2500
Tj
-40 to +135
-40 to +125
2.7(28)
2.7(28)
150
℃
Tstg
℃
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Mounting
Torque
N・m
(㎏f・B)
Terminal
(
s
M5) Recommended Value 1.5-2.5(15-25)
Mass
Typical Value
g
■Electrical Characteristics
Symbol
Item
Conditions
Ratings
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current,max.
Repetitive Peak Reverse Current,max.
Peak On-State Voltage,max.
Gate Trigger Current,max.
Gate Trigger Voltage,max.
D
DRM
70
70
Tj=135℃,V =V
RRM
I
D
RRM
Tj=135℃,V =V
TM
V
TM
1.20
70
Tj=25℃,I =100A,Inst. measurement
GT
I
D
T
mA
V
V =6V,I =1A
GT
V
D
T
3
V =6V,I =1A
Critical Rate of Rise of Off-
State Voltage,min.
2
D
DRM
500
dv/dt
Tj=125℃,V =/V
V/μs
3
Thermal Impedance, max.
Thermal Impedance, max.
Junction to Case
Case to Fin
0.36
0.10
Rth(j-c)
Rth(c-f)
℃/W
℃/W
�
DIODE Output Current vs. Power Dissipation
DIODE Maximum Forward Characteristics
�
�
1000
300�
Max.
�
500
250�
200�
150�
100�
50�
200�
�
100
Three Phase
50�
20�
Tj=25℃�
�
10
0�
�
0.5�
�
1.0�
�1.5�
2�.0�
�
2.5�
0�
20�
40�
60�
80�
100�
120�
Forward Voltage Drop V(F V)�
Output Current ID(A)�
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DFA100BA80/160
DIODE Output Current vs. �
Surge Forward Current Rating�
�
Allowable case Temperature
(Non-Repetitive)�
150�
140�
130�
120�
110�
1400�
1200�
1000�
Three Phase
Per one element
�
800�
60H z
600�
400�
200�
50H z
Singlephasehalfwave�
100�
�
Tj=25℃ start
90�
80
�
0�
�
�
0�
20�
40�
60�
80�
100�
120�
1�
2�
5�
10
20�
50� 100
Output Current ID(A)�
Time(Cycles)�
�
DIODE Transient Thermal Impedance
Gate Characteristics
0�
100�
10
5�
�
50�
2�
101�
-
Junction to Case
20�
10�
5�
5�
Peak Forward Gate Voltage(10V)�
2�
102�
-
5�
2�
-
103�
2�
1�
5�
-10℃�
2�
0.5�
-
104�
135℃�
5�
Maximum
25℃�
0.2�
0.1�
Maximum Gate Non-Trigger Voltage
2�
105�
-
ー
ー
ー
ー
ー
�
106��2� 5�105��2� 5� 104�2� 5� 103�2� 5�102�
�
�
20� 50�100 200� 500�1000�2000� 5000�10000�
10
102� 2� 5�101�2� 5� 10 2� 5� 10
Gate Curren(t mA)�
-
-
0�
1�
Time t(sec)�
�
SCR Output Current vs. Power Dissipation
SCR Maximum Forward Characteristics
�
140�
1000
Max.
120�
100�
80�
60�
40�
20�
0�
500
�
200�
�
100
50�
20�
Tj=25℃�
�
10
�
1.5�
0�
20�
40�
60�
80�
100�
120�
0.5�
1.0�
2.0�
2.5�
Output Curren(t A)�
On-State Voltage Drop VTM(V)�
SCR Output Current vs. �
�
SCR Transient Thermal Impedance
0�
Maximum Allowable case Temperature
10
160�
140�
5�
�
2�
101�
-
Junction to Case
5�
120�
100�
80�
2�
102�
-
5�
2�
103�
-
60�
40�
20�
5�
2�
-
104�
5�
Maximum
2�
105�
-
ー
ー
ー
ー
ー
106��2� 5�105��2� 5� 104�2� 5� 103�2� 5�102�
0
�
0�
20�
40�
60�
80�
100�
120�
102� 2� 5�101�2� 5� 10 2� 5� 10
-
-
0�
1�
Output Curren(t A)�
Time t(sec)�
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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