DD55F120 [SANREX]

DIODE MODULE; 二极管模块
DD55F120
型号: DD55F120
厂家: SANREX CORPORATION    SANREX CORPORATION
描述:

DIODE MODULE
二极管模块

整流二极管
文件: 总3页 (文件大小:106K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DIODE MODULE  
DD55F/KD55F  
UL;E76102M)  
Power Diode Module DD55F series are designed for various rectifier circuits. DD55F  
has two diode chips connected in series in 25mm (1inch) width package and the mounting  
base is elctrically isolated from elements for simple heatsink construction. Wide voltage  
rating up to, 1,600V is avaiable for various input voltage.  
92  
20  
20  
20  
2-  
6
Isolated mounting base  
Two elements in a package for simple (single and three phase) bridge  
connections  
Highly reliable glass passivated chips  
High surge current capability  
M5X10  
Applications)  
Various rectifiers, Battery chargers, DC motor drives  
DD  
2�  
2�  
1�  
1�  
3�  
3�  
80±0.2  
KD  
Unita  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
Symbol  
Item  
Unit  
DD55F40  
400  
DD55F80  
800  
DD55F120  
1200  
DD55F160  
1600  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
V
V
480  
960  
1300  
1700  
Symbol  
Item  
Conditions  
Ratings  
55  
Unit  
A
IFAV)  
Average Forward Current  
R.M.S. Forward Current  
Surge Forward Current  
Single phase, half wave, 180°conduction, Tc89℃  
F (RMS)  
I
86  
A
Single phase, half wave, 180°conduction, Tc89℃  
1
FSM  
I
Z
A
cycle, 50/60H , peak value, non-repetitive  
1600/1750  
12800  
2
2
2
2
I
I t  
Value for one cycle of surge current  
A.C.1minute  
A S  
t
ISO  
V
2500  
Isolation Breakdown VoltageR.M.S.)  
Junction Temperature  
V
Tj  
40 to 125  
40 to 125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
Terminal M5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
Nm  
(㎏fB)  
Mass  
g
Electrical Characteristics  
Symbol  
IRRM  
Item  
Conditions  
Ratings  
15  
Unit  
mA  
V
Repetitive Peak Reverse Current, max.  
Forward Voltage Drop, max.  
Thermal Impedance, max.  
DRM  
at V , single phase, half wave. Tj125℃  
Forward current 170ATj25Inst. measurement  
Junction to case  
VFM  
1.40  
0.50  
Rthj-c)  
/W  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  
DD55F/KD55F  
Average Forward Current vs. �  
Power Dissipation  
Maximum Forward Characteristics  
3
12�  
10  
Per one element  
5�  
10�  
D.C.  
2�  
�  
�  
Single Phase  
Three Phase  
2
10  
5�  
Max.  
�  
�  
2�  
1
10  
5�  
0�  
0�  
0�  
   �  
1�  
2�  
3�  
4�  
5�  
Forward Voltage Drop(V�  
Average Forward Current A�  
Average Forward Current vs. �  
Allowable Case Temperature  
Cycle Surge Forward Current Rating�  
(Non-Repetitive�  
13�  
12�  
11�  
10�  
�  
200�  
Per one element�  
=start  
Per one element  
150�  
100�  
60Hz  
50Hz  
D.C.  
�  
�  
50�  
0�  
�  
�  
0�  
1
2
10  
2�  
5�  
10  
2�  
5�  
10  
0�  �  
�  
Average Forward Current A�  
Time(Cycles�  
Transient Thermal Impedance  
0�  
Per one element  
9�  
8�  
7�  
6�  
5�  
4�  
3�  
2�  
1�  
0�  
Junction to Case  
-�  
-�  
-�  
0�  
1�  
2�  
3�  
4�  
10  
10  
10  
10  
10  
10  
10  
10  
Time t(sec�  
BSix pulse Bridge �  
connection  
BTwo Pluse Bridge �  
connection  
Output Current  
Output Current  
50�  
50�  
Id(Av�  
Id(AV)  
B6  
40�  
30�  
20�  
10�  
40�  
30�  
20�  
Rth:1.0℃/W�  
�  
Rth:0.6℃/W�  
Rth:0.8℃/W�  
Rth:0.6℃/W�  
Rth:0.4℃/W�  
Rth:0.2℃/W�  
Rth:0.1℃/W�  
�  
Rth:0.4℃/W�  
Rth:0.2℃/W�  
Rth:0.8℃/W�  
Rth:0.1℃/W�  
�  
B2  
10�  
11�  
10�  
11�  
10�  
0�  
12�  
12�  
12�  
12�  
0�  
�  
10�  
0�  
�  
�  
12�  
0�  
�  
10�  
0�  
�  
�  
12�  
Output Current A�  
Output Current AAmbient Temperature(℃�  
Ambient Temperature(℃�  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

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