DD30HB120 [SANREX]
DIODE MODULE; 二极管模块型号: | DD30HB120 |
厂家: | SANREX CORPORATION |
描述: | DIODE MODULE |
文件: | 总2页 (文件大小:97K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DIODE MODULE
( )
DD KD 30HB120/160
UL;E76102(M)
Power Diode Module DD30HB series are designed for various rectifier circuits.
DD30HB has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to,
1,600V is avaiable for various input voltage.
93.5MAX
80
2- 6.5
3
2
1
● Isolated mounting base
● Two elements in a package for simple (single and three phase) bridge
~
+
–
connections
● Highly reliable glass passivated chips
● High surge current capability
16.5
23
23
3M5
(Applications)
Various rectifiers, Battery chargers, DC motor drives
DD
2�
2�
1�
1�
3�
3�
KD
Unit:a
■Maximum Ratings
(Tj=25℃ unless otherwise specified)
Ratings
Symbol
Item
Unit
DD30HB120
1200
DD30HB160
VRRM
VRSM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
1600
1700
V
V
1350
Symbol
Item
Conditions
Ratings
30
Unit
A
IF(AV)
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
Single phase, half wave, 180°conduction, Tc:115℃
F (RMS)
I
47
A
Single phase, half wave, 180°conduction, Tc:115℃
1
FSM
I
Z
A
/ cycle, 50/60H , peak value, non-repetitive
550/600
1500
2
2
2
2
I
I t
Value for one cycle of surge current
A S
t
Tj
Junction Temperature
-40 to +150
-40 to +125
2500
℃
℃
V
Tstg
Storage Temperature
ISO
V
A.C.1minute
Isolation Breakdown Voltage(R.M.S.)
Mounting(M6) Recommended Value 2.5-3.9(25-40)
Termina(l M5) Recommended Value 1.5-2.5(15-25)
4.7(48)
2.7(28)
170
Mounting
Torque
N・m
(㎏f・B)
Mass
g
■Electrical Characteristics
Symbol
IRRM
Item
Conditions
Ratings
10
Unit
mA
V
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Thermal Impedance, max.
DRM
at V , single phase, half wave. Tj=150℃
Foward current 90A,Tj=25℃,Inst. measurement
Junction to case
VFM
1.50
0.80
Rth(j-c)
℃/W
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
( )
DD KD 30HB120/160
Average Forward Current vs. �
Power Dissipation
Maximum Forward Characteristics
5�
80�
Per one element
70�
60�
50�
40�
30�
20�
10�
2�
D.C.
2�
10
Single Phase
Three Phase
5�
Max.
2�
1
10
5�
0�
0�
0.6� 0.8� 1.0� 1.2� 1.4� 1.6� 1.8� 2.0� 2.2�
10� 20� 30� 40� 50� 60� 70� 80�
Forward Voltage Drop V(F V)�
Average Forward Curren(t A)�
Cycle Surge Forward Current Rating�
(Non-Repetitive)�
Average Forward Current vs. �
Allowable Case Temperature
160�
600�
Per one element�
Tj=25℃ꢀstart
150�
140�
130�
120�
110�
100�
90�
500�
400�
300�
200�
100�
0�
Per one element
60Hz
50Hz
Single Phase
Three Phase
D.C.
�
�
�
1
2�
5�
10
20�
50� 100
0�
10�
20�
30�
40�
50�
Time(Cycles)�
Average Forward Curren(t A)�
Transient Thermal Impedance
0�
1�
10 2� 5�10
0.9�
0.6�
0.3�
0�
Junction to Case
Per one element
Maximum
103� 2� 5�102� 2� 5�101� 2� 5�10
-
-
-
0�
Time t(sec)�
B2;Two Pluse Bridge �
B6;Six pulse Bridge �
�
Output Current
connection
�
Output Current
connection
300�
300�
B6
Rth:0.8C/W�
Id(Aav.)�
Rth:0.8C/W�
Rth:0.4C/W�
Rth:0.3C/W�
Rth:0.2C/W�
Rth:0.4C/W�
Rth:0.3C/W�
Rth:0.2C/W�
Id(Aav.)�
250�
250�
B6
�
�
Rth:0.1C/W�
120�
130�
Rth:0.1C/W�
�
200�
150�
100�
�
200�
150�
100�
50�
B2
120�
130�
140�
150�
140�
150�
50�
0�
�
0� 20� 40� 60� 80� 0� 25� 50� 75� 100� 125�150�
0� 20� 40� 60� 80� 0� 25� 50� 75� 100�125�150�
Output Curren(t A)� Ambient Temperature(℃)�
Output Curren(t A)�
Ambient Temperature(℃)�
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
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