DD30HB120 [SANREX]

DIODE MODULE; 二极管模块
DD30HB120
型号: DD30HB120
厂家: SANREX CORPORATION    SANREX CORPORATION
描述:

DIODE MODULE
二极管模块

二极管
文件: 总2页 (文件大小:97K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DIODE MODULE  
( )  
DD KD 30HB120/160  
UL;E76102M)  
Power Diode Module DD30HB series are designed for various rectifier circuits.  
DD30HB has two diode chips connected in series and the mounting base is elctrically  
isolated from elements for simple heatsink construction. Wide voltage rating up to,  
1,600V is avaiable for various input voltage.  
93.5MAX  
80  
2- 6.5  
3
2
1
Isolated mounting base  
Two elements in a package for simple (single and three phase) bridge  
~
+
connections  
Highly reliable glass passivated chips  
High surge current capability  
16.5  
23  
23  
3M5  
Applications)  
Various rectifiers, Battery chargers, DC motor drives  
DD  
2�  
2�  
1�  
1�  
3�  
3�  
KD  
Unita  
Maximum Ratings  
Tj25unless otherwise specified)  
Ratings  
Symbol  
Item  
Unit  
DD30HB120  
1200  
DD30HB160  
VRRM  
VRSM  
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
1600  
1700  
V
V
1350  
Symbol  
Item  
Conditions  
Ratings  
30  
Unit  
A
IFAV)  
Average Forward Current  
R.M.S. Forward Current  
Surge Forward Current  
Single phase, half wave, 180°conduction, Tc115℃  
F (RMS)  
I
47  
A
Single phase, half wave, 180°conduction, Tc115℃  
1
FSM  
I
Z
A
cycle, 50/60H , peak value, non-repetitive  
550/600  
1500  
2
2
2
2
I
I t  
Value for one cycle of surge current  
A S  
t
Tj  
Junction Temperature  
40 to 150  
40 to 125  
2500  
V
Tstg  
Storage Temperature  
ISO  
V
A.C.1minute  
Isolation Breakdown VoltageR.M.S.)  
MountingM6Recommended Value 2.5-3.925-40)  
Terminal M5Recommended Value 1.5-2.515-25)  
4.748)  
2.728)  
170  
Mounting  
Torque  
Nm  
(㎏fB)  
Mass  
g
Electrical Characteristics  
Symbol  
IRRM  
Item  
Conditions  
Ratings  
10  
Unit  
mA  
V
Repetitive Peak Reverse Current, max.  
Forward Voltage Drop, max.  
Thermal Impedance, max.  
DRM  
at V , single phase, half wave. Tj150℃  
Foward current 90ATj25Inst. measurement  
Junction to case  
VFM  
1.50  
0.80  
Rthj-c)  
/W  
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  
( )  
DD KD 30HB120/160  
Average Forward Current vs. �  
Power Dissipation  
Maximum Forward Characteristics  
5�  
�  
Per one element  
�  
�  
�  
�  
�  
�  
�  
2�  
D.C.  
2�  
10  
Single Phase  
Three Phase  
5�  
Max.  
2�  
1
10  
5�  
0�  
0�  
6� 08� 10� 2� 14� 16� 8� 20� 22�  
�  
Forward Voltage Drop VF V�  
Average Forward Current A�  
Cycle Surge Forward Current Rating�  
(Non-Repetitive�  
Average Forward Current vs. �  
Allowable Case Temperature  
16�  
60�  
Per one element�  
=ꢀstart  
15�  
14�  
13�  
12�  
11�  
10�  
�  
50�  
40�  
30�  
20�  
10�  
0�  
Per one element  
60Hz  
50Hz  
Single Phase  
Three Phase  
D.C.  
2�  
5�  
10  
�  
00  
0�  
�  
�  
�  
�  
�  
Time(Cycles�  
Average Forward Current A�  
Transient Thermal Impedance  
0�  
1�  
10 � 50  
9�  
6�  
3�  
0�  
Junction to Case  
Per one element  
Maximum  
� 5� 5� 5�0  
0�  
Time t(sec�  
BTwo Pluse Bridge �  
BSix pulse Bridge �  
Output Current  
connection  
Output Current  
connection  
300�  
30�  
B6  
Rth:0.8C/W�  
Id(Aav.�  
Rth:0.8C/W�  
Rth:0.4C/W�  
Rth:0.3C/W�  
Rth:0.2C/W�  
Rth:0.4C/W�  
Rth:0.3C/W�  
Rth:0.2C/W�  
Id(Aav.�  
25�  
25�  
B6  
Rth:0.1C/W�  
12�  
13�  
Rth:0.1C/W�  
20�  
15�  
10�  
20�  
15�  
10�  
�  
B2  
12�  
130�  
14�  
15�  
140�  
15�  
�  
0�  
0�  0�  �  
0�   0�   �  
Output Current AAmbient Temperature(℃�  
Output Current A�  
Ambient Temperature(℃�  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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