RM11BWS [SANKEN]
Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon,;
| 型号： | RM11BWS |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.2A, Silicon, 二极管 |
| 文件： | 总1页 (文件大小：26K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Rectifier Diodes
Electrical Characteristics (Ta =25°C)
Absolute Maximum Ratings
Others
Mass
Parameter
IFSM
(A)
Tj
Tstg
VF
(V)
IR
(µA)
IR
(H)
(µA)
Rth (j-
)
(°C)
(°C)
VRM
(V)
IF (AV)
(A)
Fig.
A
50Hz
Half-cycle Sinewave
Single Shot
Type No.
VR =VRM
max
VR =VRM
IF
(A)
max
0.92
(g)
(°C/ W)
Ta
=
100°C max
400
600
800
200
400
600
800
1000
600
800
1000
EM 2
1.2
80
1.2
1.0
1.5
10
5
50
17
0.3
EM 2A
EM 2B
RM 1Z
RM 1
RM 1A
RM 1B
RM 1C
RM 11A
RM 11B
RM 11C
1.0
0.8
1.2
50
40
0.95
1.2
–40 to +150
50
50
15
0.4
B
100
0.92
10
EM 2 series
Ta —IF (AV) Derating
VF—IF Characteristics (Typical)
IFMS Rating
1.5
80
50
L=10 mm
L=10 mm
10
1
1.2
0.9
0.6
0.3
0
Solder
10mm
Copper Foil
P.C.B
60
40
20
0
180 • 100 • 1.6 t
0.1
=
T
a
150°C
100°C
60°C
0.01
25°C
0.001
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
25
50
75
100
125 150
1
1
1
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 1 series
Ta —IF (AV) Derating
VF—IF Characteristics (Typical)
IFMS Rating
1.0
5.0
50
40
30
RM1Z
RM1
RM1A
0.8
0.6
0.4
0.2
0
1.0
0.5
RM 1Z
RM 1
RM 1A
RM1B
RM1C
=
20
10
T
a
130°C
100°C
25°C
RM 1B
RM 1C
0.1
0.05
0.5
0
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125 150
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RM 11 series
Ta —IF (AV) Derating
VF—IF Characteristics (Typical)
IFMS Rating
100
80
60
40
20
0
1.5
30
10
1.2
0.9
0.6
0.3
0
1
0.1
=
T
a
150°C
100°C
60°C
0.01
25°C
0.001
0.2
0.4
0.6
0.8
1.0
1.2
0
25
50
75
100
125 150
5
10
50
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
External Dimensions Fig.
A
Fig.
B
(Unit: mm)
0.78±0.05
0.78±0.05
Flammability:
UL94V-0 or Equivalent
Cathode Mark
Cathode Mark
2.7±0.2
4.0±0.2
14
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