RK36W [SANKEN]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon,;
| 型号： | RK36W |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, Silicon, 整流二极管 |
| 文件： | 总2页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
60V
Schottky Barrier Diodes
IFSM
IR
IR (H)
Rth (j-
Rth (j- c)
(°C/W)
)
(
A
)
(mA)
(mA)
VRM
(V)
Tj
(°C)
Tstg
(°C)
VF
(V)
Mass
(g)
IF (AV)
(A)
Fig.
No.
Package
Part Number
IF
Ta
(°C)
50Hz
Half-cycle Sinewave
Single Shot
VR = V RM
max
VR = V RM
max
(
A
)
max
0.62
0.7
0.7
1.5
2.0
2.0
5.0
6.0
0.7
0.7
1.5
1.5
2.0
3.5
6.0
4.0
10
25
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.7
1.5
2.0
2.0
5.0
3.0
0.7
0.7
1.5
1.5
2.0
3.5
5.0
2.0
5.0
5.0
7.5
10.0
15
1
1
7.5
70
100
150 (Tj)
100
20
20
20
20
5
0.072
0.072
0.072
0.072
0.29
0.29
0.13
0.3
82
95
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SPB-G56S
SPB-66S
AK 06
Surface Mount
25
0.69
0.62
0.7
1
15
83
40
2
20
100
60
3
125
70
150
84
85
86
87
88
89
91
Surface Mount
Center-tap
40
0.7
1
150
5
10
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.72
0.62
0.7
1
7.5
7.5
15
100
22
20
17
15
12
8
10
1
100
EK 06
25
1
100
0.3
EK 16
Axial
25
1
15
100
0.45
0.6
RK 16
60
40
2
20
100
RK 36
70
3
35
100
1.2
RK 46
Frame-2Pin
50
5
50
100
4
2.1
FMB-G16L
FMB-26
FMB-26L
FME-2106
FMB-36
FMB-2206
FMB-2306
FMB-36M
RBV-406B
40
1
20
100
4
2.1
10
50
2.5
1
50
100
4
2.1
10
15
20
30
30
60
35
150 (Tj)
100
4
2.1
95
94
91
92
94
95
Center-tap
Bridge
100
150
150
150
40
5
75
2
5.5
8
275
400
150
20
150
4
2.1
0.7
8
150 (Tj)
100
4
2.1
0.62
0.62
15.0
2.0
10
2
2
5.5
4.0
100
5
4.25
ꢀꢀExternal Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
0.55 ±0.1
4.5±0.2
0.57±0.02
2.9
a
b
Cathode Mark
4.9
c
0 to 0.25
a : Part Number
b: Polarity
1.15±0.1
2.4±0.1
0.8±0.1
0.8 ±0.1
c: Lot No.
2.29±0.5 2.29±0.5
(Common to backside of case)
0.55±0.1
1.5 max
1.35±0.4
1.35±0.4
2.0min
1.1±0.2
1.5±0.2
1 Chip
N.C
Cathode
Anode
+0.4
–0.1
5.1
Center-tap Anode
Cathode (Common) Anode
4.2
2.8
10.0
2.2
3.3
0.6±0.05
0.78±0.05
0.78±0.05
0.98±0.05
1.4±0.1
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
2.6
2.7±0.2
2.7±0.2
1.35
0.85
4.0±0.2
4.0±0.2
6.5±0.2
0.45
5.08
5.0
15.0
9.0
4.2
2.8
10.0
25±0.2
4.6±0.2
3.6±0.2
3.3
C 0.5
3.3
12.5±0.2
C3
2.2
2.6
2.7±0.1
2.3
3.4
1.0
1.35
1.35
0.85
+0.2
–0.1
0.65
1+–00..12
0.7–+00..12
0.45
2.54
2.54
5.45
5.45
2.6
7.5±0.1 7.5±0.1 7.5±0.1
38
Characteristic Curves
Schottky Barrier Diodes
SPB-G34S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
V
R=40V
3.0
50
40
30
20
10
0
100
30
10
D.C.
2.5
2.0
1.5
20ms
=
T
a
125°C
100°C
10
1
=
1
0.1
t / T 1/6
=
t / T 1/ 3
60°C
=
1.0
0.5
0
T
a
125°C
100°C
60°C
=
t / T 1/2
0.1
0.01
0.001
28°C
Sinewave
28°C
0.01
0.005
1
1
1
1
0
5
10
50
50
50
50
95
100 105 110
115 120
125
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-G54S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
VR=40V
D.C.
5.0
4.0
3.0
2.0
1.0
0
500
100
30
10
60
50
40
30
20
20ms
=
T
a
125°C
100°C
=
t / T 1/6
10
1
1
0.1
=
t / T 1/ 3
60°C
=
T
a
125°C
100°C
60°C
0.1
=
t / T 1/2
0.01
0.001
28°C
10
0
28°C
Sinewave
100
0.01
0.005
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
5
10
70
80
90
110 120
130
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-G56S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
V
R=60V
6.0
50
10
60
50
40
30
20
20
10
D.C.
=
T
a
125°C
100°C
5.0
20ms
1
4.0
3.0
2.0
1.0
0
1
=
t / T 1/6
60°C
23°C
0.1
0.1
0.01
=
t / T 1/ 3
=
T
a
125°C
100°C
60°C
=
0.01
t / T 1/2
10
0
23°C
Sinewave
0.001
0.001
5
10
70
80
90
100
110 120
130
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-64S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
VR=40V
100
10
50
40
30
20
10
0
6.0
30
10
Sinewave
D.C.
5.0
20ms
=
T
a
125°C
100°C
=
t / T 1/6
1
0.1
4.0
3.0
2.0
1
=
t / T 1/ 3
=
t / T 1/2
60°C
27°C
0.1
=
T
a
125°C
100°C
60°C
0.01
0.001
0.01
1.0
0
27°C
0.001
70
80
90
100
110 120
130
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
5
10
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-66S
IF(AV)—PF Characteristics
VR—PR Characteristics
Tc —IF (AV) Derating
Tc —IF (AV) Derating
VR=0V
t / T=1/2
VR=60V
6
5
4
3
2
6
5
4
3
2
6
5
4
3
2
8
7
6
5
4
3
2
1
0
Tj=150°C
Tj=150°C
t / T=1/6
t / T=1/3
t / T=1/2
t / T=1/6
D.C.
t
T
t
T
1– t / T=5/6
1– t / T=2/3
t / T=1/6
t / T=1/3, Sinewave
t / T=1/2
Sinewave
t / T=1/3, Sinewave
D.C.
1– t / T=1/2
Tj=150°C
Tj=150°C
D.C.
1
0
1
0
1
0
t
T
t
T
Sinewave
50 60
Reverse Voltage VR (V)
100
110
120
130
140
150
0
50
100
150
0
1
2
3
4
5
6
10
20
30
40
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Average Forward Current IF(AV) (A)
84
相关型号：
RK39A1A00027
This LED illuminated ring potentiometer is best suited for knob design of various set devices
ALPS
RK39A1A00028
This LED illuminated ring potentiometer is best suited for knob design of various set devices
ALPS
RK39A_15
This LED illuminated ring potentiometer is best suited for knob design of various set devices
ALPS
©2020 ICPDF网 联系我们和版权申明