RK34 [SANKEN]
Schottky Barrier Diodes; 肖特基势垒二极管
| 型号： | RK34 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Schottky Barrier Diodes |
| 文件： | 总3页 (文件大小：87K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40V
Schottky Barrier Diodes
IFSM
IR
IR (H)
Rth (j-
Rth (j- c)
(°C/W)
)
(
A
)
(mA)
(mA)
VRM
(V)
Tj
(°C)
Tstg
(°C)
VF
(V)
Mass
(g)
Fig.
No.
IF (AV)
(A)
Package
Part Number
IF
Ta
(°C)
50Hz
Half-cycle Sinewave
Single Shot
VR = V RM VR = V RM
max
(
A
)
max
max
1.0
1.5
2.0
2.0
3.0
5.0
6.0
1.0
1.0
1.0
1.0
2.0
1.5
1.7
2.5
3.0
3.0
5.0
10.0
15
30
60
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.55
1.0
2.0
2.0
2.0
3.0
5.0
3.0
1.0
1.0
1.0
1.0
2.0
2.0
2.0
2.5
3.0
3.0
5.0
10.0
7.5
2.0
3.0
5.0
5.0
5.0
6
1
50
100
100
20
20
20
20
5
0.072
0.072
0.072
0.072
0.29
0.29
0.29
0.13
0.13
0.13
0.3
82
83
—
SFPB-54
SFPB-64
SFPB-74
SFPE-64
SPB-G34S
SPB-G54S
SPB-64S
AK 04
0.55
0.5
5
5
50
50
60
100
Surface Mount
40
0.6
0.2
3.5
5
20
150 (Tj)
100
50
0.55
0.55
0.55
0.55
0.58
0.6
50
60
50
100
5
84
Surface Mount
Center-tap
50
3.5
1
50
100
5
25
50
100 (Tj)
150
22
22
22
20
20
17
15
12
8
85
—
—
86
—
86
25
5
35
AW 04
25
0.1
5
10
150 (Tj)
100
AE 04
40
0.55
0.6
50
EK 04
40
0.2
5
20
150 (Tj)
100
0.3
Axial
EE 04
*
40
0.55
0.55
0.55
0.55
0.55
0.55
0.55
0.6
50
0.3
EK 14
60
5
50
100
0.45
0.6
RK 14
87
88
50
5
50
100
RK 34
80
5
50
100
1.2
RK 44
60
5
100
100
65
100
4
2.1
FMB-G14
FMB-G14L
FMB-G24H
MPE-24H
FMB-24
40
60
5
100
4
2.1
89
Frame-2Pin
150
100
50
10
100
4
2.1
0.75
50
150 (Tj)
100
2.5
4
1.04
2.1
85
90
91
4.0
6.0
10.0
10
0.55
0.55
0.55
0.55
0.6
5
35
60
5
35
100
4
2.1
FMB-24M
FMW-24L
FMB-24L
FME-2104
FMB-34S
FMW-24H
FME-24H
FMB-24H
FMB-34
100
60
5
175
35
150
4
2.1
90
5
100
4
2.1
10
80
0.5
5
30
100
4
2.1
92
94
90
92
90
93
—
81
91
93
12
75
0.58
0.55
0.6
35
100
2
5.5
15
120
100
100
150
150
120
150
300
7.5
7.5
7.5
7.5
10
7.5
0.75
7.5
250
50
150
4
2.1
Center-tap
15
100
4
2.1
15
0.55
0.55
0.55
0.55
0.55
0.55
50
100
4
2.1
15
10
65
100
2
5.5
20
10
10
15
20
350
350
500
100
150
4
2.1
FMB-2204
FMW-2204
FMB-2304
FMB-34M
20
10
150 (Tj)
150
4
2.1
30
15
4
2.1
30
15.0
100
2
5.5
: Under development
*
36
40V
Schottky Barrier Diodes
ꢀꢀExternal Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
0.55 ±0.1
4.5±0.2
2.9
a
b
4.9
c
0 to 0.25
a : Part Number
b: Polarity
1.15±0.1
0.8±0.1
0.8 ±0.1
c: Lot No.
2.29±0.5 2.29±0.5
(Common to backside of case)
0.55±0.1
1.5 max
1.35±0.4
1.35±0.4
2.0min
+0.4
1.1±0.2
1.5±0.2
1 Chip
N.C
Cathode
Anode
–0.1
Center-tap Anode
Cathode (Common) Anode
5.1
0.6±0.05
0.78±0.05
0.78±0.05
0.98±0.05
0.57±0.02
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
2.7±0.2
2.7±0.2
2.4±0.1
4.0±0.2
4.0±0.2
4.2
2.8
10.0
2.2
3.3
10.2
±0.2
4.44
±0.3
4.44
10.2
±0.2
1.4±0.1
1.3
1.3
Cathode Mark
a
b
c
+0.2
2.6
–0.1
0.1
±0.2
1.27
1.2
2.59
±0.2
1.27
2.59
+0.2
±0.1
–0.1
0.86
0.4
0.86
1.35
0.85
±0.2
6.5±0.2
1.2
a : Part Number
b: Polarity
c: Lot No.
0.76
2.54
±0.5
±0.5
2.54
2.54
0.45
5.08
0.4
2.54
5.0
15.0
9.0
4.2
2.8
10.0
2.2
3.3
C 0.5
3.3
2.6
2.3
3.4
1.0
+0.2
1.35
1.35
0.85
–0.1
0.65
0.45
5.45
5.45
2.54
2.54
2.6
37
Characteristic Curves
Schottky Barrier Diodes
FME-220A
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IF(AV)—PF Characteristics
Tc —IF (AV) Derating
V
R
=100V
20
16
12
8
100
10
1
100
10
25
Tj=150ºC
Sinewave
t / T=1/2
t / T=1/3
Ta =150°C
125°C
t / T=1/6
t
T
20
15
10
100°C
1
t / T=1/ 3, Sinewave
D.C.
60°C
0.1
0.01
t / T=1/6
0.1
Ta=150°C
125°C
100°C
60°C
25°C
t / T=1/2
D.C.
Tj=150ºC
0.01
5
0
4
0
0.001
t
T
25°C
0.001
0.0001
0
50
100
150
0
0.4
0.8
1.2
1.6
0
20
40
60
80
100
0
5
10
15
20
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Average Forward Current IF(AV) (A)
FME-230A
VF —IF Cha racteristics (Typical)
IF(AV)—PF Characteristics
Tc —IF (AV) Derating
V
R
=100V
35
30
25
20
15
10
5
30
25
20
15
100
10
1
Tj=150ºC
Tj=150ºC
Sinewave
t / T=1/2
t / T=1/3
t
T
t
T
t / T=1/6
t / T=1/ 3, Sinewave
D.C.
0.1
10
5
Ta=150°C
125°C
100°C
60°C
t / T=1/2
D.C.
0.01
25°C
t / T=1/6
0
0.001
0
0
50
100
150
0
0.4
0.8
1.2
1.6
0
5
10
15
20
25
30
Case Temperature Tc (°C)
Forward Voltage VF (V)
Average Forward Current IF(AV) (A)
FMJ -23L
VF —IF Cha racteristics (Typical)
IF(AV)—PF Characteristics
Tc —IF (AV) Derating
V
=30V
R
100
10
1
10
10
Tj=150ºC
t
T
D.C.
8
6
4
8
6
4
t / T=1/6
t / T=1/3
t / T=1/2
Sinewave
t / T=1/6
t / T =1/ 3, Sinewave
0.1
Ta=150°C
125°C
100°C
60°C
Tj=150ºC
2
0
2
0
0.01
25°C
D.C.
t
T
t / T =1/2
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
50
70
90
110
130
150
0
1
1
2
4
6
8
10
Case Temperature Tc (°C)
Forward Voltage VF (V)
Average Forward Current IF(AV) (A)
FMB-34
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
50
10
100
10
15
12
9
150
120
90
60
30
0
=
D.C.
T
a
125°C
100°C
20ms
Sinewave
1
0.1
=
t / T 1/6
1
60°C
28°C
6
=
t / T 1/ 3
=
T
a
125°C
100°C
60°C
0.1
0.01
0.001
3
0
=
t / T 1/2
28°C
0.01
80
90
100
110
120
130
0
20
40
60
80
5
10
Overcurrent Cycles
50
0
0.2
0.4
0.6
0.8
1.0
1.2
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
FMB-34M
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
20
10
500
100
30
24
18
12
300
240
180
120
60
Sinewave
=
T
a
125°C
100°C
20ms
D.C.
1
0.1
=
t / T 1/2
10
1
=
t / T 1/6
60°C
22°C
=
T
a
125°C
100°C
60°C
=
t / T 1/ 3
0.01
0.001
0.1
6
0
26°C
0.01
0
40
60
80
100
120
140
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
50
60 70
5
10
50
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
93
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