RK16VO
更新时间：2024-09-18 13:00:08
品牌：SANKEN
描述：Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, Silicon,
概述
规格参数
数据手册RK16VO 概述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 1.5A, Silicon, 整流二极管
RK16VO 规格参数
| 生命周期： | Active | Reach Compliance Code： | unknown |
| ECCN代码： | EAR99 | HTS代码： | 8541.10.00.80 |
| 风险等级： | 5.7 | 应用： | GENERAL PURPOSE |
| 外壳连接： | ISOLATED | 配置： | SINGLE |
| 二极管元件材料： | SILICON | 二极管类型： | RECTIFIER DIODE |
| JESD-30 代码： | O-PALF-W2 | 最大非重复峰值正向电流： | 25 A |
| 元件数量： | 1 | 相数： | 1 |
| 端子数量： | 2 | 最高工作温度： | 150 °C |
| 最低工作温度： | -40 °C | 最大输出电流： | 1.5 A |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | ROUND |
| 封装形式： | LONG FORM | 认证状态： | Not Qualified |
| 表面贴装： | NO | 技术： | SCHOTTKY |
| 端子形式： | WIRE | 端子位置： | AXIAL |
| Base Number Matches： | 1 |
RK16VO 数据手册
通过下载RK16VO数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载60V
Schottky Barrier Diodes
IFSM
IR
IR (H)
Rth (j-
Rth (j- c)
(°C/W)
)
(
A
)
(mA)
(mA)
VRM
(V)
Tj
(°C)
Tstg
(°C)
VF
(V)
Mass
(g)
IF (AV)
(A)
Fig.
No.
Package
Part Number
IF
Ta
(°C)
50Hz
Half-cycle Sinewave
Single Shot
VR = V RM
max
VR = V RM
max
(
A
)
max
0.62
0.7
0.7
1.5
2.0
2.0
5.0
6.0
0.7
0.7
1.5
1.5
2.0
3.5
6.0
4.0
10
25
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
0.7
1.5
2.0
2.0
5.0
3.0
0.7
0.7
1.5
1.5
2.0
3.5
5.0
2.0
5.0
5.0
7.5
10.0
15
1
1
7.5
70
100
150 (Tj)
100
20
20
20
20
5
0.072
0.072
0.072
0.072
0.29
0.29
0.13
0.3
82
95
SFPB-56
SFPW-56
SFPB-66
SFPB-76
SPB-G56S
SPB-66S
AK 06
Surface Mount
25
0.69
0.62
0.7
1
15
83
40
2
20
100
60
3
125
70
150
84
85
86
87
88
89
91
Surface Mount
Center-tap
40
0.7
1
150
5
10
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.62
0.72
0.62
0.7
1
7.5
7.5
15
100
22
20
17
15
12
8
10
1
100
EK 06
25
1
100
0.3
EK 16
Axial
25
1
15
100
0.45
0.6
RK 16
60
40
2
20
100
RK 36
70
3
35
100
1.2
RK 46
Frame-2Pin
50
5
50
100
4
2.1
FMB-G16L
FMB-26
FMB-26L
FME-2106
FMB-36
FMB-2206
FMB-2306
FMB-36M
RBV-406B
40
1
20
100
4
2.1
10
50
2.5
1
50
100
4
2.1
10
15
20
30
30
60
35
150 (Tj)
100
4
2.1
95
94
91
92
94
95
Center-tap
Bridge
100
150
150
150
40
5
75
2
5.5
8
275
400
150
20
150
4
2.1
0.7
8
150 (Tj)
100
4
2.1
0.62
0.62
15.0
2.0
10
2
2
5.5
4.0
100
5
4.25
ꢀꢀExternal Dimensions
Flammability: UL94V-0 or Equivalent (Unit: mm)
2.3±0.4
6.5±0.4
5.4±0.4
5.4
4.1
0.55 ±0.1
4.5±0.2
0.57±0.02
2.9
a
b
Cathode Mark
4.9
c
0 to 0.25
a : Part Number
b: Polarity
1.15±0.1
2.4±0.1
0.8±0.1
0.8 ±0.1
c: Lot No.
2.29±0.5 2.29±0.5
(Common to backside of case)
0.55±0.1
1.5 max
1.35±0.4
1.35±0.4
2.0min
1.1±0.2
1.5±0.2
1 Chip
N.C
Cathode
Anode
+0.4
–0.1
5.1
Center-tap Anode
Cathode (Common) Anode
4.2
2.8
10.0
2.2
3.3
0.6±0.05
0.78±0.05
0.78±0.05
0.98±0.05
1.4±0.1
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
2.6
2.7±0.2
2.7±0.2
1.35
0.85
4.0±0.2
4.0±0.2
6.5±0.2
0.45
5.08
5.0
15.0
9.0
4.2
2.8
10.0
25±0.2
4.6±0.2
3.6±0.2
3.3
C 0.5
3.3
12.5±0.2
C3
2.2
2.6
2.7±0.1
2.3
3.4
1.0
1.35
1.35
0.85
+0.2
–0.1
0.65
1+–00..12
0.7–+00..12
0.45
2.54
2.54
5.45
5.45
2.6
7.5±0.1 7.5±0.1 7.5±0.1
38
Characteristic Curves
Schottky Barrier Diodes
SPB-G34S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
V
R=40V
3.0
50
40
30
20
10
0
100
30
10
D.C.
2.5
2.0
1.5
20ms
=
T
a
125°C
100°C
10
1
=
1
0.1
t / T 1/6
=
t / T 1/ 3
60°C
=
1.0
0.5
0
T
a
125°C
100°C
60°C
=
t / T 1/2
0.1
0.01
0.001
28°C
Sinewave
28°C
0.01
0.005
1
1
1
1
0
5
10
50
50
50
50
95
100 105 110
115 120
125
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-G54S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
VR=40V
D.C.
5.0
4.0
3.0
2.0
1.0
0
500
100
30
10
60
50
40
30
20
20ms
=
T
a
125°C
100°C
=
t / T 1/6
10
1
1
0.1
=
t / T 1/ 3
60°C
=
T
a
125°C
100°C
60°C
0.1
=
t / T 1/2
0.01
0.001
28°C
10
0
28°C
Sinewave
100
0.01
0.005
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
5
10
70
80
90
110 120
130
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-G56S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
V
R=60V
6.0
50
10
60
50
40
30
20
20
10
D.C.
=
T
a
125°C
100°C
5.0
20ms
1
4.0
3.0
2.0
1.0
0
1
=
t / T 1/6
60°C
23°C
0.1
0.1
0.01
=
t / T 1/ 3
=
T
a
125°C
100°C
60°C
=
0.01
t / T 1/2
10
0
23°C
Sinewave
0.001
0.001
5
10
70
80
90
100
110 120
130
0.2
0.4
0.6
0.8
1.0
0
10
20
30
40
50
60
70
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-64S
VF —IF Cha racteristics (Typical)
VR—IR Cha racteristics (Typical)
IFMS Rating
Tc —IF (AV) Derating
VR=40V
100
10
50
40
30
20
10
0
6.0
30
10
Sinewave
D.C.
5.0
20ms
=
T
a
125°C
100°C
=
t / T 1/6
1
0.1
4.0
3.0
2.0
1
=
t / T 1/ 3
=
t / T 1/2
60°C
27°C
0.1
=
T
a
125°C
100°C
60°C
0.01
0.001
0.01
1.0
0
27°C
0.001
70
80
90
100
110 120
130
0
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
60
5
10
Case Temperature Tc (°C)
Forward Voltage VF (V)
Reverse Voltage VR (V)
Overcurrent Cycles
SPB-66S
IF(AV)—PF Characteristics
VR—PR Characteristics
Tc —IF (AV) Derating
Tc —IF (AV) Derating
VR=0V
t / T=1/2
VR=60V
6
5
4
3
2
6
5
4
3
2
6
5
4
3
2
8
7
6
5
4
3
2
1
0
Tj=150°C
Tj=150°C
t / T=1/6
t / T=1/3
t / T=1/2
t / T=1/6
D.C.
t
T
t
T
1– t / T=5/6
1– t / T=2/3
t / T=1/6
t / T=1/3, Sinewave
t / T=1/2
Sinewave
t / T=1/3, Sinewave
D.C.
1– t / T=1/2
Tj=150°C
Tj=150°C
D.C.
1
0
1
0
1
0
t
T
t
T
Sinewave
50 60
Reverse Voltage VR (V)
100
110
120
130
140
150
0
50
100
150
0
1
2
3
4
5
6
10
20
30
40
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Average Forward Current IF(AV) (A)
84
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