RH3FWK [SANKEN]
Rectifier Diode, 1 Element, 2.5A, Silicon,;
| 型号： | RH3FWK |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Rectifier Diode, 1 Element, 2.5A, Silicon, 整流二极管 电视 |
| 文件： | 总1页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Damper Diodes (For TV)
Electrical Characteristics (Ta =25°C)
trr
Absolute Maximum Ratings
Parameter
Others
Mass
trr
IFSM
(A)
50Hz
Half-cycle Sinewave
Single Shot
Tj
(°C)
Tstg
(°C)
VF
(V)
IR
(µA)
IR
(H)
➀
➁
Rth (j-
)
(µs)
(µs)
(µA)
VRM
(V)
IF (AV)
(A)
Fig.
Type No.
VR =VRM
max
VR =VRM
IF
(A)
IF
(mA)
/
IRP
IF
/
IRP
max
(°C/ W)
(g)
Ta
=
100°C max
(mA)
1500
1300
0.8
1.0
15.0
0.44
A
B
RH 10F
RH 2D
RH 2F
RH 3F
RH 3G
RH 4F
60
50
1.0 1.0
10
10/10
12.0
0.6
500
–40 to +150
4.0
1.3 100/200
1500
C
D
1.3
2.5
50
10
10.0
8.0
1.0
1.2
1600
1500
2.5
100/100
1.5
350
RH 10F, 2D, 2F
VF—IF Characteristics (Typical)
IFMS Rating
Ta —IF(AV) Derating
1.0
60
50
40
30
20
10
0
10
0
20ms
0.8
0.6
0.4
0.2
0
0.1
=
T
a
150ºC
100ºC
60ºC
0.01
25ºC
0.001
0.2
0.4
0.6
0.8
1.0
1.2
1
1
1
5
10
50
0
25 40 50 60 75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RH 3F, 3G
VF—IF Characteristics (Typical)
IFMS Rating
Ta —IF(AV) Derating
2.5
2.0
1.5
1.0
0.5
0
50
40
30
20
10
0
20
10
10mm
20ms
P. C. B. t 1.6
Solder Land 10 mm
0
0.1
=
T
a
150ºC
100ºC
60ºC
0.01
25ºC
0.001
0.1 0.3
0.5
0.7 0.9
1.1
1.3
5
10
50
0
25
50
75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
RH 4F
VF—IF Characteristics (Typical)
IFMS Rating
Ta —IF(AV) Derating
3.0
50
40
30
20
10
0
20
10
20• 20• 1t Cu
2.5
2.0
1.5
1.0
0.5
20ms
5mm
5mm
0
0.1
=
T
a
150ºC
100ºC
60ºC
0.01
25ºC
0.001
0
0
0.1 0.3
0.5
0.7 0.9
1.1
1.3
5
10
50
25
50 60 75
100
125 150
Ambient Temperature Ta (°C)
Forward Voltage VF (V)
Overcurrent Cycles
Fig.
B
External Dimensions
Fig.
A
Fig.
C
Fig.
D
(Unit: mm)
0.78±0.05
0.98±0.05
1.2±0.05
1.4 ±0.1
Flammability:
UL94V-0 or Equivalent
Cathode Mark
Cathode Mark
Cathode Mark
Cathode Mark
4.0±0.2
4.0±0.2
5.2±0.2
6.5±0.2
69
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