2SD2045_01 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor; 硅NPN三重扩散平面晶体管
2SD2045_01
型号: 2SD2045_01
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor
硅NPN三重扩散平面晶体管

晶体 晶体管
文件: 总1页 (文件大小:30K)
中文:  中文翻译
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C
E
Equivalent  
circuit  
B
Darlington 2 S D2 0 4 5  
(2.5k)(200)  
Silicon NPN Triple Diffused Planar Transistor  
Application : Driver for Solenoid, Motor and General Purpose  
External Dimensions FM100(TO3PF)  
Absolute maximum ratings  
Electrical Characteristics  
(Ta=25°C)  
(Ta=25°C)  
Ratings  
Symbol  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Conditions  
VCB=120V  
Ratings  
10max  
10max  
120min  
2000min  
1.5max  
2.0max  
50typ  
Unit  
Unit  
µA  
mA  
V
±0.2  
5.5  
±0.2  
15.6  
±0.2  
3.45  
120  
ICBO  
V
120  
IEBO  
VEB=6V  
V
.
V(BR)CEO  
hFE  
6
IC=10mA  
V
±0.2  
ø3.3  
6(Pulse10)  
1
VCE=2V, IC=3A  
IC=3A, IB=3mA  
IC=3A, IB=3mA  
VCE=12V, IE=1A  
VCB=10V, f=1MHz  
A
a
b
VCE(sat)  
VBE(sat)  
fT  
V
V
IB  
A
PC  
50(Tc=25°C)  
150  
W
°C  
°C  
1.75  
2.15  
0.8  
MHz  
pF  
Tj  
COB  
Tstg  
70typ  
–55 to +150  
+0.2  
-0.1  
1.05  
+0.2  
±0.1  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
1.5  
4.4  
Weight : Approx 2.0g  
a. Part No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
IB1  
(mA)  
IB2  
(mA)  
ton  
(µs)  
tstg  
(µs)  
tf  
(µs)  
b. Lot No.  
B
C
E
30  
10  
3
10  
–5  
3
–3  
0.5typ  
5.5typ  
1.5typ  
IC VBE Temperature Characteristics (Typical)  
IC VCE Characteristics (Typical)  
VCE(sat) IB Characteristics (Typical)  
(VCE=2V)  
6
5
4
3
2
1
0
3
6
5
4
3
2
1
0
2
IC=8A  
4A  
1
2A  
0
0
1
2
3
4
5
6
0.1  
0.5  
1
5
10  
50 100  
0
1
2
Collector-Emitter Voltage VCE(V)  
Base Current IB(mA)  
Base-Emittor Voltage VBE(V)  
θ
hFE IC Characteristics (Typical)  
hFE IC Temperature Characteristics (Typical)  
j-a t Characteristics  
(VCE=2V)  
(VCE=2V)  
5
10000  
5000  
10000  
Typ  
5000  
1000  
500  
1000  
500  
1
0.5  
100  
50  
100  
50  
0.2  
1
10  
100  
1000  
0.03  
0.1  
0.5  
1
5
6
0.03  
0.1  
0.5  
1
5 6  
Collector Current IC(A)  
Collector Current IC(A)  
Time t(ms)  
fT IE Characteristics (Typical)  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
(VCE=12V)  
50  
40  
120  
100  
20  
10  
5
Typ  
80  
60  
30  
20  
10  
0
1
0.5  
40  
Without Heatsink  
Natural Cooling  
20  
0
0.1  
Without Heatsink  
0.05  
–0.05 –0.1  
–0.5  
–1  
–5 –6  
3
5
10  
50  
100  
200  
0
25  
50  
75  
100  
125  
150  
Collector-Emitter Voltage VCE(V)  
Emitter Current IE(A)  
Ambient Temperature Ta(˚C)  
144  

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