2SC5002 [SANKEN]

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管(显示水平偏转输出,开关稳压器和通用)
2SC5002
型号: 2SC5002
厂家: SANKEN ELECTRIC    SANKEN ELECTRIC
描述:

Silicon NPN Triple Diffused Planar Transistor(Display Horizontal Deflection Output, Switching Regulator and General Purpose)
硅NPN三重扩散平面型晶体管(显示水平偏转输出,开关稳压器和通用)

晶体 稳压器 开关 晶体管
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2 S C5 0 0 2  
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)  
Absolute maximum ratings (Ta=25°C) Electrical Characteristics  
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose  
(Ta=25°C)  
External Dimensions FM100(TO3PF)  
Symbol  
Symbol  
2SC5002  
1500  
2SC5002  
Conditions  
Unit  
µA  
mA  
µA  
V
Unit  
±0.2  
5.5  
±0.2  
15.6  
ICBO1  
VCB=1200V  
100max  
1max  
±0.2  
VCBO  
VCEO  
VEBO  
IC  
V
3.45  
ICBO2  
IEBO  
VCB=1500V  
800  
V
VEB=6V  
100max  
800min  
8min  
6
V
V(BR)CEO  
hFE1  
IC=10mA  
±0.2  
ø3.3  
7(Pulse14)  
3.5  
A
VCE=5V, IC=1A  
VCE=5V, IC=5A  
IC=5A, IB=1.2A  
IC=5A, IB=1.2A  
VCE=12V, IE=0.5A  
VCB=10V, f=1MHz  
a
b
IB  
A
hFE2  
4 to 9  
PC  
80(Tc=25°C)  
150  
W
°C  
°C  
VCE(sat)  
VBE(sat)  
fT  
V
V
5max  
Tj  
1.5max  
4typ  
1.75  
0.8  
2.15  
+0.2  
MHz  
pF  
Tstg  
–55 to +150  
1.05  
-0.1  
COB  
100typ  
+0.2  
±0.1  
1.5  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
4.4  
C
Weight : Approx 6.5g  
a. Type No.  
b. Lot No.  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
VBB2  
(V)  
tstg  
(µs)  
IB1  
(A)  
IB2  
(A)  
tf  
(µs)  
B
E
200  
50  
4
10  
–5  
4.0max  
0.8  
–1.6  
0.2max  
IC VCE Characteristics (Typical)  
VCE(sat) IC Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(VCE=5V)  
7
7
3
2
1
0
(IC: IB=5 :1)  
6
4
2
0
6
5
4
3
2
1
0
0
1
2
3
4
0.02  
0.1  
0.5  
1
5
10  
0
0.5  
1.0  
1.5  
Collector-Emitter Voltage VCE(V)  
Collector Current IC(A)  
Base-Emittor Voltage VBE(V)  
j-a t Characteristics  
hFE IC Characteristics (Typical)  
tstgtf IC Characteristics (Typical)  
θ
(VCE=5V)  
20  
10  
5
100  
3
.
VCC=200V  
.
IC : IB1: IB2 =5 :1: 2  
tstg  
50  
1
0.5  
tf  
1
10  
5
0.5  
0.1  
0.2  
2
0.1  
1
10  
100  
Time t(ms)  
1000 2000  
0.02  
0.05 0.1  
0.5  
1
5
7
0.5  
1
5
7
Collector Current IC(A)  
Collector Current IC(A)  
Reverse Bias Safe Operating Area  
Safe Operating Area (Single Pulse)  
Pc Ta Derating  
20  
20  
10  
5
80  
100µs  
10  
5
60  
40  
1
Without Heatsink  
Natural Cooling  
L=3mH  
Without Heatsink  
Natural Cooling  
0.5  
20  
–IB2=1A  
Duty:less than 1%  
Without Heatsink  
3.5  
0
1
100  
0.1  
50  
500  
1000  
100  
500  
1000  
2000  
0
50  
100  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
122  

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