2SC4907 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose); 硅NPN三重扩散平面型晶体管（开关稳压器和通用）
| 型号： | 2SC4907 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2 S C4 9 0 7
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)
Application : Switching Regulator and General Purpose
External Dimensions FM20(TO220F)
■Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
2SC4907
Symbol
ICBO
2SC4907
Symbol
Conditions
Unit
mA
µA
V
Unit
±0.2
4.2
±0.2
10.1
c
0.5
2.8
1max
100max
500min
10to30
0.5max
1.3max
8typ
VCBO
VCEO
VEBO
IC
600
500
VCB=600V
V
IEBO
VEB=10V
V
V(BR)CEO
hFE
10
IC=25mA
V
±0.2
ø3.3
a
b
VCE=4V, IC=2A
IC=2A, IB=0.4A
IC=2A, IB=0.4A
VCE=12V, IE=–0.5A
VCB=10V, f=1MHz
6(Pulse12)
2
A
VCE(sat)
VBE(sat)
fT
IB
V
V
A
PC
30(Tc=25°C)
150
W
°C
°C
±0.15
1.35
Tj
MHz
pF
±0.15
1.35
COB
45typ
Tstg
–55 to +150
+0.2
-0.1
0.85
+0.2
-0.1
0.45
±0.2
2.4
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
±0.2
2.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
IB2
ton
tstg
tf
(A)
(A)
(µs)
(µs)
(µs)
B
C E
200
100
2
10
–5
0.2
–0.4
1max
4.5max
0.5max
–
–
–
IC VCE Characteristics (Typical)
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
(IC/IB=5)
6
6
5
4
3
2
1
0
2
5
4
3
2
1
VBE(sat)
1
25˚C
IB=100mA
VCE(sat)
0
0.02
0
0
1
2
3
4
0.05 0.1
0.5
1
5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Collector-Emitter Voltage VCE(V)
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
–
–
–
hFE IC Characteristics (Typical)
ton•tstg•tf IC Characteristics (Typical)
θ
j-a t Characteristics
(VCE=4V)
4
1
7
5
50
125˚C
25˚C
tstg
VCC 200V
IC:IB1:IB2=10:1:–2
1
0.5
ton
10
5
0.5
0.3
tf
0.1
0.2
1
10
100
1000
0.5
1
5
6
0.02
0.05 0.1
0.5
1
5
6
Collector Current IC(A)
Time t(ms)
Collector Current IC(A)
Safe Operating Area (Single Pulse)
Reverse Bias Safe Operating Area
–
Pc Ta Derating
30
20
10
20
10
5
20
10
5
1
1
Without Heatsink
Natural Cooling
L=3mH
0.5
0.5
Without Heatsink
Natural Cooling
IB2=–0.5A
Duty:less than 1%
Without Heatsink
2
0
0.1
10
0.1
10
50
100
500
1000
0
25
50
75
100
125
150
50
100
500 1000
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
Collector-Emitter Voltage VCE(V)
120
相关型号：
2SC4908
Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)
SANKEN
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