2SC4495_01 [SANKEN]
Silicon NPN Triple Diffused Planar Transistor; 硅NPN三重扩散平面晶体管
| 型号： | 2SC4495_01 |
| 厂家： | 
SANKEN ELECTRIC |
| 描述： | Silicon NPN Triple Diffused Planar Transistor |
| 文件： | 总1页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Hig h h FE
LOW VCE (s a t )
2 S C4 4 9 5
Silicon NPN Triple Diffused Planar Transistor
Application : Audio Temperature Compensation and General Purpose
■
Absolute maximum ratings (Ta=25°C)
■Electrical Characteristics
(Ta=25°C)
External Dimensions FM20(TO220F)
Ratings
Symbol
ICBO
Ratings
10max
10max
50min
Symbol
VCBO
VCEO
VEBO
IC
Conditions
Unit
V
Unit
µA
µA
V
±0.2
4.2
±0.2
10.1
c
0.5
2.8
80
VCB=80V
IEBO
50
VEB=6V
V
V(BR)CEO
hFE
6
IC=25mA
V
±0.2
ø3.3
a
b
500min
0.5max
40typ
3
1
VCE=4V, IC=0.5A
IC=1A, IB=20mA
VCE=12V, IE=–0.1A
VCB=10V,f=1MHz
A
VCE(sat)
fT
IB
V
MHz
pF
A
PC
25(Tc=25°C)
150
W
°C
°C
±0.15
1.35
COB
30typ
Tj
±0.15
1.35
Tstg
–55 to +150
+0.2
-0.1
0.85
+0.2
-0.1
0.45
±0.2
2.4
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
±0.2
2.2
RL
IC
VBB1
VBB2
(V)
IB1
IB2
ton
tstg
tf
Weight : Approx 2.0g
a. Part No.
b. Lot No.
VCC
(V)
(Ω)
(A)
(V)
(mA)
(mA)
(µs)
(µs)
(µs)
B
C E
20
1
10
–5
15
–30
0.45typ
1.60typ
0.85typ
20
–
–
–
IC VCE Characteristics (Typical)
VCE(sat) IB Characteristics (Typical)
IC VBE Temperature Characteristics (Typical)
(VCE=4V)
1.5
3
3
2.5
2
2
1
0
1
1.5
1
2mA
0.5
3A
1mA
2A
IB=0.5mA
0.5
IC=1A
0
0
0
1
2
3
4
5
6
1
10
100
1000
0
0.5
1
1.5
Collector-Emitter Voltage VCE(V)
Base Current IB(mA)
Base-Emittor Voltage VBE(V)
–
–
–
j-a t Characteristics
hFE IC Characteristics (Typical)
hFE IC Temperature Characteristics (Typical)
θ
(VCE=4V)
(VCE=4V)
7
5
3000
5000
125˚C
25˚C
Typ
–55˚C
1000
500
1000
500
100
50
100
0.01
20
0.01
1
1
10
100
Time t(ms)
1000 2000
0.1
0.5
1
3
0.1
0.5
1
3
Collector Current IC(A)
Collector Current IC(A)
–
fT IE Characteristics (Typical)
Safe Operating Area (Single Pulse)
–
Pc Ta Derating
(VCE=12V)
30
20
10
10
5
60
40
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Typ
1
150x150x2
100x
0.5
20
Without Heatsink
Natural Cooling
50x50x2
0.1
Without Heatsink
2
0
0
–0.005 –0.01
0.05
–0.1
Emitter Current IE(A)
–1
3
5
50
100
10
0
25
50
75
100
125
150
Collector-Emitter Voltage VCE(V)
Ambient Temperature Ta(˚C)
110
相关型号：
2SC4497-O
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
2SC4497-R
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
TOSHIBA
2SC4497-R(TE85L)
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
TOSHIBA
2SC4497OTE85R
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
TOSHIBA
2SC4497RTE85L
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
TOSHIBA
2SC4497RTE85R
TRANSISTOR 100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, BIP General Purpose Small Signal
TOSHIBA
©2020 ICPDF网 联系我们和版权申明