SSS5N70 [SAMSUNG]
Power Field-Effect Transistor, 2.7A I(D), 700V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
| 型号： | SSS5N70 |
| 厂家： | 
SAMSUNG SEMICONDUCTOR |
| 描述： | Power Field-Effect Transistor, 2.7A I(D), 700V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN 局域网 晶体管 |
| 文件： | 总1页 (文件大小：30K) |
| 下载： | 下载PDF数据表文档文件 |
SSS5N80
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.7A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
108
ETC
SSS5N80
Power Field-Effect Transistor, 2.7A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS5N80A
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3A I(D) | TO-220FWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
67
ETC
SSS5N80A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
21
FAIRCHILD
SSS5N90
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.8A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
296
ETC
SSS5N90
Power Field-Effect Transistor, 2.8A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
1
SAMSUNG
SSS5N90A
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-220FWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
299
ETC
SSS60N05
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 36A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
ETC
SSS60N06
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 36A I(D) | SOT-186Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
84
ETC
SSS60N06
Power Field-Effect Transistor, 36A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS6N55
N CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
39
SAMSUNG
SSS6N55
N CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
32
SAMSUNG
SSS6N55
Power Field-Effect Transistor, 3.2A I(D), 550V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSS6N60
N CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
500
SAMSUNG
SSS6N60
N CHANNEL POWER MOSFETSWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
134
SAMSUNG
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