KM718FV4002H-9 [SAMSUNG]

Late-Write SRAM, 256KX18, 8ns, CMOS, PBGA119;


型号：	KM718FV4002H-9
厂家：	SAMSUNG
描述：	Late-Write SRAM, 256KX18, 8ns, CMOS, PBGA119 静态存储器内存集成电路
文件：	总11页 (文件大小：778K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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