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元器件品牌
K9XXG08UXM-Y
[SAMSUNG]
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory; 256M ×8位/ 128M x 16位NAND闪存
元器件型号:
K9XXG08UXM-Y
生产厂家:
SAMSUNG SEMICONDUCTOR
描述和应用:
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
256M ×8位/ 128M x 16位NAND闪存
闪存
PDF文件:
总39页 (文件大小:679K)
下载文档:
下载PDF数据表文档文件
型号参数:K9XXG08UXM-Y参数
查看货源
K9XXG08XXA-XCB0
Preliminary FLASH MEMORY
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SAMSUNG
K9XXG08XXA-XIB0
Preliminary FLASH MEMORY
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34
SAMSUNG
K9XXG16UXM-E
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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21
SAMSUNG
K9XXG16UXM-K
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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17
SAMSUNG
K9XXG16UXM-P
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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14
SAMSUNG
K9XXG16UXM-Y
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
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23
SAMSUNG
KA SERIES
蓝宝宝浪涌抑制器
Warning
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105
dowosemi
KA-012
Trans Voltage Suppressor Diode, 12.8V V(RWM), Bidirectional, 1 Element, Silicon,
Warning
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0
PROTEC
KA02
FINE WIRE (Fibre Glass) THERMOCOUPLE SENSOR
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31
ETC
KA-025
Trans Voltage Suppressor Diode, 25V V(RWM), Bidirectional, 1 Element, Silicon,
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-
0
PROTEC
KA-058
Radial Lead Transient Voltage Suppressors (TVS)
Warning
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156
-
1
UNSEMI
KA-066
Trans Voltage Suppressor Diode,
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156
-
0
PROTEC
KA-076
Radial Lead Transient Voltage Suppressors (TVS)
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156
-
0
UNSEMI
KA-1000100020%
Common Mode Choke, 1000uH, 20%, 2 Element
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156
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0
VISHAY
KA100O015E-BJTT
MCP Specification
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151
SAMSUNG
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