K9T1G08B0M-YCB00 [SAMSUNG]
Flash, 128MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48;
| 型号： | K9T1G08B0M-YCB00 |
| 厂家： | 
SAMSUNG |
| 描述： | Flash, 128MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 光电二极管 内存集成电路 |
| 文件： | 总38页 (文件大小：897K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary
K9T1G08B0M
FLASH MEMORY
Document Title
128M x 8 Bits NAND Flash Memory
Revision History
Revision No. History
Draft Date
Remark
0.0
Nov. 8th 2004
Advanced
Initial issue.
1.Program/Erase characteristics note1 is added
2.Technical note is changed
0.1
Nov. 22th 2004
Preliminary
3.Vcc range is changed(2.4V~2.9V->2.5V~2.9V)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
Preliminary
K9T1G08B0M
FLASH MEMORY
128M x 8 Bits NAND Flash Memory
PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
TSOP1
K9T1G08B0M-Y,P
K9T1G08B0M-V,F
2.5V ~ 2.9V
X8
WSOP1
FEATURES
• Voltage Supply : 2.5V ~ 2.9V
• Organization
• Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Memory Cell Array : (128M + 4,096K)bits x 8bits
- Data Register : (512 + 16)bits x 8bits
• Automatic Program and Erase
- Data Retention : 10 Years
• Command Register Operation
• Intelligent Copy-Back
- Page Program : (512 + 16)bits x 8bits
- Block Erase : (16K + 512)Bytes
• Page Read Operation
• Unique ID for Copyright Protection
• Package
- K9T1G08B0M-YCB0/YIB0
- Page Size : (512 + 16)Bytes
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)
- K9T1G08B0M-VCB0/VIB0
- Random Access
: 15µs(Max.)
- Serial Page Access : 50ns(Min.)
• Fast Write Cycle Time
48 - Pin WSOP I (12 X 17 X 0.7mm)
- K9T1G08B0M-PCB0/PIB0
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
48 - Pin TSOP I (12 X 20 / 0.5 mm pitch)- Pb-free Package
- K9T1G08B0M-FCB0/FIB0
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
48 - Pin WSOP I (12 X 17 X 0.7mm)- Pb-free Package
- Program/Erase Lockout During Power Transitions
GENERAL DESCRIPTION
Offered in 128Mx8bits, the K9T1G08B0M is 1Gbit with spare 32Mbit capacity. The device is offered in 2.7V Vcc. Its NAND cell pro-
vides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200µs
on the 528-bytes and an erase operation can be performed in typical 2ms on a 16K-bytes block. Data in the page can be read out at
50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip
write control automates all program and erase functions including pulse repetition, where required, and internal verification and mar-
gining of data. Even the write-intensive systems can take advantage of the K9T1G08B0M′s extended reliability of 100K program/
erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9T1G08B0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
2
Preliminary
K9T1G08B0M
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9T1G08B0M-YCB0,PCB0/YIB0,PIB0
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
CE
9
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220AF
Unit :mm/Inch
20.00±0.20
0.787±0.008
#1
#48
#24
#25
1.00±0.05
0.039±0.002
0.05
0.002
MIN
1.20
0.047
MAX
18.40±0.10
0.724±0.004
0~8°
0.45~0.75
0.018~0.030
0.50
0.020
(
)
3
Preliminary
K9T1G08B0M
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9T1G08B0M-VCB0,FCB0/VIB0,FIB0
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
1
2
3
4
5
6
7
8
CE
9
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
WP
N.C
N.C
DNU
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
Unit :mm
48 - WSOP1 - 1217F
0.70 MAX
0.58±0.04
15.40±0.10
#1
#48
#24
#25
(0.01Min)
0.45~0.75
17.00±0.20
4
Preliminary
K9T1G08B0M
FLASH MEMORY
PIN DESCRIPTION
Pin Name
Pin Function
DATA INPUTS/OUTPUTS
I/O0 ~ I/O7
CLE
The I/O pins are used to input command, address and data, and to output data during read operations. The I/
O pins float to high-z when the chip is deselected or when the outputs are disabled.
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high,
commands are latched into the command register through the I/O ports on the rising edge of the WE signal.
ADDRESS LATCH ENABLE
ALE
The ALE input controls the activating path for address to the internal address registers. Addresses are
latched on the rising edge of WE with ALE high.
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and
the device does not return to standby mode in program or erase opertion. Regarding CE control during read
operation, refer to ’Page read’ section of Device operation .
CE
READ ENABLE
RE
WE
WP
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid
tREA after the falling edge of RE which also increments the internal column address counter by one.
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of
the WE pulse.
WRITE PROTECT
The WP pin provides inadvertent write/erase protection during power transitions. The internal high voltage
generator is reset when the WP pin is active low.
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or
random read operation is in process and returns to high state upon completion. It is an open drain output and
does not float to high-z condition when the chip is deselected or when outputs are disabled.
R/B
OUTPUT BUFFER POWER
VccQ
VCCQ is the power supply for Output Buffer.
VccQ is internally connected to Vcc, thus should be biased to Vcc.
POWER
Vcc
Vss
N.C
VCC is the power supply for device.
GROUND
NO CONNECTION
Lead is not internally connected.
DO NOT USE
Leave it disconnected.
DNU
NOTE : Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
5
Preliminary
K9T1G08B0M
FLASH MEMORY
Figure 1. K9T1G08B0M FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
X-Buffers
A9 - A26
1G + 32M Bits
Latches
NAND Flash
ARRAY
& Decoders
Y-Buffers
Latches
A0 - A7
& Decoders
(512 + 16)Bytes x 262,144
Page Register & S/A
Y-Gating
A8
Command
Command
Register
I/O Buffers & Latches
Global Buffers
VCC/VCCQ
VSS
CE
RE
WE
Control Logic
& High Voltage
Generator
I/0 0
I/0 7
Output
Driver
CLE ALE
WP
Figure 2. K9T1G08B0M ARRAY ORGANIZATION
1 Block = 32 Pages
= (16K + 512) Bytes
1 Page = 528 Bytes
1 Block = 528 Bytes x 32 Pages
= (16K + 512) Bytes
1 Device = 528Bytes x 32Pages x 8,192 Blocks
= 1,056 Mbits
256K Pages
(=8,192 Blocks)
1st half Page Register
(=256 Bytes)
2nd half Page Register
(=256 Bytes)
8 bits
512Bytes
16 Bytes
16 Bytes
I/O 0 ~ I/O 7
Page Register
512 Bytes
I/O 0
A0
I/O 1
A1
I/O 2
A2
I/O 3
I/O 4
I/O 5
A5
I/O 6
A6
I/O 7
A7
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
A3
A12
A20
*L
A4
A13
A21
*L
Column Address
Row Address
(Page Address)
A9
A10
A18
A26
A11
A19
*L
A14
A22
*L
A15
A23
*L
A16
A24
*L
A17
A25
NOTE : Column Address : Starting Address of the Register.
00h Command(Read) : Defines the starting address of the 1st half of the register.
01h Command(Read) : Defines the starting address of the 2nd half of the register.
* A8 is set to "Low" or "High" by the 00h or 01h Command.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
6
Preliminary
K9T1G08B0M
FLASH MEMORY
Product Introduction
The K9T1G08B0M is a 1,056Mbits(1,107,296,256 bits) memory organized as 262,144 rows(pages) by 528 columns. Spare sixteen
columns are located from column address of 512 to 527. A 528-bytes data register is connected to memory cell arrays accommodat-
ing data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up
of 16 cells that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of
the 32 pages formed two NAND structures. A NAND structure consists of 16 cells. Total 8,448 NAND structures reside in a block. The
array organization is shown in Figure 2. The program and read operations are executed on a page basis, while the erase operation is
executed on a block basis. The memory array consists of 8,192 separately erasable 16K-bytes blocks. It indicates that the bit by bit
erase operation is prohibited on the K9T1G08B0M.
The K9T1G08B0M has addresses multiplexed into 8 I/O's. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O's by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. The 128M byte physical space requires
27 addresses, thereby requiring four cycles for byte-level addressing : 1 cycle of column address, 3 cycles of row address, in that
order. Page Read and Page Program need the same four address cycles following the required command input. In Block Erase oper-
ation, however, only the 3 cycles of row address are used. Device operations are selected by writing specific commands into the com-
mand register. Table 1 defines the specific commands of the K9T1G08B0M.
The device provides simultaneous program/erase capability up to four pages/blocks. By dividing the memory array into four 256Mbit
separate planes, simultaneous multi-plane operation dramatically increases program/erase performance by 4X while still maintaining
the conventional 512 bytes structure. The extended pass/fail status for multi-plane program/erase allows system software to quickly
identify the failing page/block out of selected multiple pages/blocks. Usage of multi-plane operations will be described further through-
out this document.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
of the same plane without the need for transporting the data to and from the external buffer memory. Since the time-consuming burst-
reading and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
The device includes one block sized OTP(One Time Programmable), which can be used to increase system security or to provide
identification capabilities. Detailed information can be obtained by contact with Samsung.
Table 1. Command Sets
2’nd
Cycle
Acceptable Command
during Busy
Function
1’st Cycle
3’rd Cycle
4’th Cycle
5’th Cycle
(1)
Read 1
Read 2
Read ID
Reset
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
00h/01h
50h
90h/91h
FFh
-
-
-
-
-
O
(2)
80h
10h
11h
8Ah
8Ah
D0h
D0h
-
-
Page Program (True)
(2)
80h
-
Page Program (Dummy)
(2)
00h
10h
Copy-Back Program(True)
(2)
03h
11h
Copy-Back Program(Dummy)
Block Erase
60h
-
-
-
-
Multi-Plane Block Erase
Read Status
60h----60h
70h
O
O
(3)
Read Multi-Plane Status
-
71h
NOTE : 1. The 00h/01h command defines starting address of the 1st/2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is automatically moved to the 1st half register(00h)
on the next cycle.
2. Page Program(True) and Copy-Back Program(True) are available on 1 plane operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on the 2nd, 3rd, 4th plane of multi-plane operation.
3. The 71h command should be used for read status of Multi Plane operation.
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.
7
Preliminary
K9T1G08B0M
FLASH MEMORY
Memory Map
The device is arranged in four 256Mbits memory planes. Each plane contains 2,048 blocks and 528 bytes page register. This allows
it to perform simultaneous page program and block erase by selecting one page or block from each plane. The block address map is
configured so that multi-plane program/erase operations can be executed for every four sequential blocks.
Figure 3. Memory Array Map
Plane 3
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Block 0
Block 2
Block 3
Block 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 4
Block 6
Block 7
Block 5
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 8,184
Block 8,186
Block 8,187
Block 8,185
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Block 8,188
Block 8,190
Block 8,191
Block 8,189
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
528bytes Page Register
528bytes Page Register
528bytes Page Register
528bytes Page Register
8
Preliminary
K9T1G08B0M
FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN/OUT
Rating
Unit
-0.6 to +4.6
-0.6 to +4.6
-10 to +125
-40 to +125
Voltage on any pin relative to VSS
V
VCC/VCCQ
K9T1G08B0M-XCB0
Temperature Under Bias
TBIAS
°C
K9T1G08B0M-XIB0
K9T1G08B0M-XCB0
Storage Temperature
TSTG
IOS
-65 to +150
5
°C
K9T1G08B0M-XIB0
mA
Short Circuit Current
NOTE :
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND at the condision of K9T1G08B0M-XCB0 : TA=0 to 70°C or K9T1G08B0M-XIB0 : TA=-40 to 85°C)
Parameter
Symbol
VCC
Min
2.5
2.5
0
Typ.
2.7
2.7
0
Max
2.9
2.9
0
Unit
V
Supply Voltage
VCCQ
VSS
V
V
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions otherwise noted.)
Paramete
Symbol
ICC1
ICC2
ICC3
ISB1
ISB2
ILI
Test Conditions
Min
Typ
Max
Unit
Sequential Read
tRC=50ns, CE=VIL, IOUT=0mA
-
10
10
10
-
20
Operating
Current
Program
Erase
-
-
-
20
mA
-
20
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
CE=VIH, WP=0V/VCC
CE=VCC-0.2, WP=0V/VCC
VIN=0 to Vcc(max)
VOUT=0 to Vcc(max)
I/O pins
-
1
-
10
-
50
-
±10
±10
µA
ILO
-
VCCQ-0.4
VCC-0.4
-0.3
-
-
VCCQ+0.3
Input High Voltage
VIH
Except I/O pins
-
-
VCC+0.3
V
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
VIL
VOH
VOL
-
0.5
-
IOH=-400µA
VCCQ-0.4
-
-
IOL=2.1mA
-
0.4
-
IOL(R/B) VOL=0.4V
3
4
mA
Notes :
1. Typical values are measured at Vcc=2.7V, TA=25°C. And not 100% tested.
9
Preliminary
K9T1G08B0M
FLASH MEMORY
VALID BLOCK
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
NVB
8,052
-
8,192
Blocks
NOTE :
1. The K9T1G08B0M may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks
is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or
program factory-marked bad blocks. Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycles.
3. Minimum 2,013 valid blocks are guaranteed for each contiguous 256Mb memory space.
AC TEST CONDITION
(K9T1G08B0M-XCB0 :TA=0 to 70°C, K9T1GXXU0M-XIB0:TA=-40 to 85°C)
Parameter
Value
Input Pulse Levels
0.4V to 2.4V
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
5ns
1.5V
VccQ=2.7V+/-10% : 1 TTL GATE and CL= 30pF
CAPACITANCE(TA=25°C, VCC=2.7V, f=1.0MHz)
Item
Symbol
Test Condition
Min
Max
10
Unit
pF
Input/Output Capacitance
Input Capacitance
CI/O
VIL=0V
-
-
CIN
VIN=0V
10
pF
NOTE : Capacitance is periodically sampled and not 100% tested.
MODE SELECTION
CLE
H
L
ALE
L
CE
L
WE
RE
H
WP
Mode
Command Input
X
Read Mode
Write Mode
H
L
H
X
Address Input (4 clocks)
Command Input
H
L
L
L
H
H
H
L
H
H
Address Input (4 clocks)
L
L
L
H
H
Data Input
L
L
L
H
H
X
X
X
X
X
Data Output
L
L
L
H
X
X
X
X
X
During Read (Busy)
X
X
X
X
X
H
H
During Program (Busy)
During Erase (Busy)
Write Protect
X
X
H
L
X(1)
X
X
(2)
X
Stand-by
0V/VCC
NOTE : 1. X can be VIL or VIH.
2. WP should be biased to CMOS high or CMOS low for standby.
Program / Erase Characteristics
Parameter
Symbol
Min
Typ
Max
500
10
1
Unit
Program Time
tPROG
tDBSY
-
200
µs
µs
Dummy Busy Time for Multi Plane Program
1
-
Main Array
Spare Array
-
-
-
cycle
cycle
ms
Number of Partial Program Cycles
in the Same Page
Nop
-
2
Block Erase Time
tBERS
2
3
NOTE : 1.Typical program time is defined as the time within more than 50% of the whole pages are programmed at Vcc of 3.3V and 25°C
10
Preliminary
K9T1G08B0M
FLASH MEMORY
AC Timing Characteristics for Command / Address / Data Input
Parameter
Symbol
tCLS
tCLH
tCS
Min
0
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CLE Set-up Time
CLE Hold Time
CE Setup Time
CE Hold Time
-
-
5
0
.-
-
tCH
5
25 (1)
0
WE Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
WE High Hold Time
tWP
-
tALS
tALH
tDS
-
5
-
20
5
-
tDH
-
tWC
45
15
-
tWH
-
NOTE :
1. If tCS is set less than 10ns, tWP must be minimum 35ns, otherwise, tWP may be minimum 25ns.
AC Characteristics for Operation
Parameter
Symbol
tR
Min
-
Max
Unit
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
Data Transfer from Cell to Register
15
ALE to RE Delay
tAR
10
10
20
25
-
-
CLE to RE Delay
tCLR
tRR
-
Ready to RE Low
-
RE Pulse Width
tRP
-
WE High to Busy
tWB
100
Read Cycle Time
tRC
50
-
-
CE Access Time
tCEA
tREA
tRHZ
tCHZ
tOH
45
RE Access Time
-
30
RE High to Output Hi-Z
CE High to Output Hi-Z
RE or CE High to Output hold
RE High Hold Time
-
30
-
20
15
15
0
-
tREH
tIR
-
Output Hi-Z to RE Low
-
WE High to RE Low
tWHR
tRST
tRB
60
-
-
5/10/500(1)
100
Device Resetting Time(Read/Program/Erase)
Last RE High to Busy(at sequential read)
CE High to Ready(in case of interception by CE at read)
CE High Hold Time(at the last serial read)(2)
-
50 + tr(R/B)(3)
-
tCRY
tCEH
-
100
NOTE :
1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
2. To break the sequential read cycle, CE must be held high for longer time than tCEH.
3. The time to Ready depends on the value of the pull-up resistor tied R/B pin.
11
Preliminary
K9T1G08B0M
FLASH MEMORY
NAND Flash Technical Notes
Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung.
The information regarding the initial invalid block(s) is so called as the initial invalid block information. Devices with initial invalid
block(s) have the same quality level as devices with all valid blocks and have the same AC and DC characteristics. An initial invalid
block(s) does not affect the performance of valid block(s) because it is isolated from the bit line and the common source line by a
select transistor. The system design must be able to mask out the initial invalid block(s) via address mapping. The 1st block, which is
placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction up to 1K Program/Erase
cycles.
Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The ini-
tial invalid block(s) status is defined by the 6th byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every
initial invalid block has non-FFh data at the column address of 517. Since the initial invalid block information is also erasable in most
cases, it is impossible to recover the information once it has been erased. Therefore, the system must be able to recognize the initial
invalid block(s) based on the initial invalid block information and create the initial invalid block table via the following suggested flow
chart(Figure 4). Any intentional erasure of the initial invalid block information is prohibited.
Start
Set Block Address = 0
Increment Block Address
Check "FFh" at the column address 517
*
of the 1st and 2nd page in the block
No
Create (or update)
Check "FFh" ?
Initial
Invalid Block(s) Table
Yes
No
Last Block ?
Yes
End
Figure 4. Flow chart to create initial invalid block table.
12
Preliminary
K9T1G08B0M
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Error in write or read operation
Within its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. In case of Read, ECC must be
employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error
be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those reclaimed blocks.
Failure Mode
Erase Failure
Detection and Countermeasure sequence
Status Read after Erase --> Block Replacement
Status Read after Program --> Block Replacement
Verify ECC -> ECC Correction
Write
Read
Program Failure
Single Bit Failure
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bits detection
ECC
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
No
I/O 6 = 1 ?
or R/B = 1 ?
Yes
*
No
Program Error
I/O 0 = 0 ?
Yes
Program Completed
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
13
Preliminary
K9T1G08B0M
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Read Data
Write D0h
Read Status Register
ECC Generation
No
No
I/O 6 = 1 ?
or R/B = 1 ?
Reclaim the Error
Verify ECC
Yes
Yes
*
No
Page Read Completed
Erase Error
I/O 0 = 0 ?
Yes
Erase Completed
: If erase operation results in an error, map out
the failing block and replace it with another block.
*
Block Replacement
Block A
1st
2
{
(n-1)th
nth
an error occurs.
(page)
Buffer memory of the controller.
Block B
1st
1
{
(n-1)th
nth
(page)
* Step1. When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2. Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3. Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4. Do not further erase Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
14
Preliminary
K9T1G08B0M
FLASH MEMORY
Pointer Operation of K9T1G08B0M
Samsung NAND Flash has three address pointer commands as a substitute for the two most significant column addresses. ’00h’
command sets the pointer to ’A’ area(0~255byte), ’01h’ command sets the pointer to ’B’ area(256~511byte), and ’50h’ command sets
the pointer to ’C’ area(512~527byte). With these commands, the starting column address can be set to any of a whole
page(0~527byte). ’00h’ or ’50h’ is sustained until another address pointer command is inputted. ’01h’ command, however, is effective
only for one operation. After any operation of Read, Program, Erase, Reset, Power_Up is executed once with ’01h’ command, the
address pointer returns to ’A’ area by itself. To program data starting from ’A’ or ’C’ area, ’00h’ or ’50h’ command must be inputted
before ’80h’ command is written. A complete read operation prior to ’80h’ command is not necessary. To program data starting from
’B’ area, ’01h’ command must be inputted right before ’80h’ command is written.
"A" area
"B" area
"C" area
(00h plane)
(01h plane)
(50h plane)
256 Bytes
256 Bytes
16 Bytes
Table 2. Destination of the pointer
Command
Pointer position
Area
00h
01h
50h
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
"A"
"B"
"C"
Internal
Page Register
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 5. Block Diagram of Pointer Operation
(1) Command input sequence for programming ’A’ area
The address pointer is set to ’A’ area(0~255), and sustained
Address / Data input
Address / Data input
00h
80h
10h
00h
80h
10h
’A’,’B’,’C’ area can be programmed.
’00h’ command can be omitted.
It depends on how many data are inputted.
(2) Command input sequence for programming ’B’ area
The address pointer is set to ’B’ area(256~511), and will be reset to
’A’ area after every program operation is executed.
Address / Data input
Address / Data input
80h 10h
01h
80h
10h
01h
’B’, ’C’ area can be programmed.
It depends on how many data are inputted.
’01h’ command must be rewritten before
every program operation
(3) Command input sequence for programming ’C’ area
The address pointer is set to ’C’ area(512~527), and sustained
Address / Data input
Address / Data input
80h 10h
50h
80h
10h
50h
Only ’C’ area can be programmed.
’50h’ command can be omitted.
15
Preliminary
K9T1G08B0M
FLASH MEMORY
System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal
528bytes page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addition, for
voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and read-
ing would provide significant savings in power consumption.
Figure 6. Program Operation with CE don’t-care.
CLE
CE don’t-care
CE
WE
ALE
80h
Start Add.(4Cycle)
Data Input
Data Input
10h
I/OX
tCS
tCH
tCEA
CE
CE
tREA
RE
tWP
WE
I/OX
out
Figure 7. Read Operation with CE don’t-care.
On K9T1G08B0M-Y,P or K9T1G08B0M-V,F
CE must be held
CLE
CE
CE don’t-care
low during tR
RE
ALE
tR
R/B
WE
Data Output(sequential)
I/OX
00h
Start Add.(4Cycle)
16
Preliminary
K9T1G08B0M
FLASH MEMORY
* Command Latch Cycle
CLE
CE
tCLH
tCH
tCLS
tCS
tWP
WE
tALS
tALH
ALE
I/OX
tDH
tDS
Command
* Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
CE
tWP
tWP
tWP
tWP
WE
tWH
tALH
tALS
tWH
tALH
tALS
tWH
tALH
tALH
tALS
tALS
ALE
I/OX
tDH
tDH
tDH
tDH
tDS
tDS
tDS
tDS
A0~A7
A9~A16
A17~A24
A25~A26
17
Preliminary
K9T1G08B0M
FLASH MEMORY
* Input Data Latch Cycle
tCLH
CLE
CE
tCH
tWC
tALS
ALE
tWP
tWP
tWP
WE
tWH
tDH
tDH
tDH
tDS
tDS
tDS
I/Ox
DIN n
DIN 0
DIN 1
* Serial access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
CE
tCHZ*
tOH
tREH
tREA
tREA
tREA
RE
tRHZ*
tOH
tRHZ*
I/Ox
Dout
Dout
Dout
tRR
R/B
NOTES : Transition is measured ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
18
Preliminary
K9T1G08B0M
FLASH MEMORY
* Status Read Cycle
tCLR
CLE
CE
tCLS
tCS
tCLH
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR
RE
tRHZ
tOH
tDH
tREA
tDS
tIR
Status Output
I/OX
70h
READ1 OPERATION(READ ONE PAGE)
CLE
1)
tCEH
On K9T1G08B0M-Y,P or K9T1G08D0B-V,F
CE must be held
low during tR
CE
tCHZ
tOH
tWC
WE
tWB
tCRY
tAR
ALE
tRHZ
tOH
tR
tRC
RE
N Address
tRR
A9 ~ A16
A17 ~ A24
00h or 01h A0 ~ A7
Dout N
Dout N+1 Dout N+2
Dout m
tRB
A25 ~ A26
I/OX
R/B
Column
Address
Page(Row)
Address
Busy
1)
NOTES : 1) is only valid on K9T1G08B0M-Y,P or K9T1G08B0M-V,F
19
Preliminary
K9T1G08B0M
FLASH MEMORY
Read1 Operation(Intercepted by CE)
CLE
CE
On K9T1G08B0M-Y,P or K9T1G08B0M-V,F
CE must be held
low during tR
WE
ALE
RE
tWB
tCHZ
tOH
tAR
tR
tRC
tRR
A25 ~ A26
A9 ~ A16 A17 ~ A24
Dout N+2
00h or 01h A0 ~ A7
Dout N
Dout N+1
I/OX
Page(Row)
Address
Column
Address
Busy
R/B
Read2 Operation(Read One Page)
CLE
CE
On K9T1G08B0M-Y,P or K9T1G08B0M-V,F
CE must be held
low during tR
WE
ALE
RE
tR
tWB
tAR
tRR
Dout
n+m
n+M
50h
A9 ~ A16 A17 ~ A24
A25 ~ A26
A0 ~ A7
I/OX
R/B
Selected
Row
M Address
A0~A3 : Valid Address
A4~A7 : Don′t care
16
512
Start
address M
20
Preliminary
K9T1G08B0M
FLASH MEMORY
Sequential Row Read Operation ( Within a Block )
CLE
CE
WE
ALE
RE
Dout
N
Dout
N+1
Dout
527
Dout
0
Dout
1
Dout
527
00h
A9 ~ A16
A17 ~ A24
A0 ~ A7
A25 ~ A26
I/OX
R/B
Ready
Busy
Busy
M
M+1
Output
N
Output
Page Program Operation
CLE
CE
tWC
tWC
tWC
WE
ALE
RE
tPROG
tWB
Din
N
Din
527
A25 ~ A26
10h
80h
A0 ~ A7 A9 ~ A16 A17 ~ A24
70h
I/O0
I/OX
R/B
Sequential Data Column
Input Command
Program
Command
1 up to 528 Byte Data
Serial Input
Read Status
Command
Page(Row)
Address
Address
I/O0=0 Successful Program
I/O0=1 Error in Program
21
Preliminary
K9T1G08B0M
FLASH MEMORY
BLOCK ERASE OPERATION(ERASE ONE BLOCK)
CLE
CE
tWC
WE
tBERS
tWB
ALE
RE
60h
A9 ~ A16 A17 ~ A24
DOh
70h
I/O 0
A25 ~ A26
I/OX
R/B
Page(Row)
Address
Busy
I/O0=0 Successful Erase
Read Status I/O0=1 Error in Erase
Command
Erase Setup Command
Erase Command
22
Preliminary
K9T1G08B0M
FLASH MEMORY
≈
≈
≈
≈
≈
≈
≈
≈
≈
≈ ≈
≈ ≈ ≈
≈
≈
≈
≈
≈ ≈
≈ ≈
23
Preliminary
K9T1G08B0M
FLASH MEMORY
Multi-Plane Block Erase Operation
CLE
CE
tWC
WE
ALE
RE
tBERS
tWB
A17 ~ A24
A9 ~ A16
A25 ~ A26
60h
DOh
71h
I/O 0
I/OX
R/B
Page(Row)
Address
Busy
Erase Setup Command
Erase Confirm Command
Read Multi-Plane
Status Command
I/O0=0 Successful Erase
I/O0=1 Error in Erase
Max. 4 times repeatable
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
R/B
tBERS
A9 ~ A26
D0h
60h
A9 ~ A26
A9 ~ A26
71h
60h
60h
Address
A9 ~ A26
60h
I/O0~7
24
Preliminary
K9T1G08B0M
FLASH MEMORY
Read ID Operation (90 ID)
CLE
CE
WE
ALE
RE
tREA
C0h
00h
ECh
79h
A5h
90h
I/OX
Read ID Command
Maker Code Device Code
Multi Plane Code
Address. 1cycle
ID Defintition Table
90 ID : Access command = 90H
Value
Description
1st Byte
2nd Byte
3rd Byte
4th Byte
ECh
79h
A5h
C0h
Maker Code
Device Code
Must be don’t -cared
Supports Multi Plane Operation
Read ID Operation (91 ID)
CLE
CE
WE
ALE
RE
tREA
00h
20h
91h
I/OX
Read ID Command
Extended ID Code
Address. 1cycle
25
Preliminary
K9T1G08B0M
FLASH MEMORY
Copy-Back Program Operation
CLE
On K9T1G08B0M-Y,P or K9T1G08B0M-V,F
CE must be held low during tR
CE
tWC
WE
ALE
RE
tWB
tPROG
tWB
tR
A0~A7 A9~A16 A17~A24 A25~A26
8Ah
A0~A7 A9~A16 A17~A24 A25~A26
00h
10h
70h
I/O0
I/OX
R/B
Column
Column
Read Status
Command
Page(Row)
Page(Row)
Address
Address
Address
Address
Busy
Busy
Copy-Back Data
Input Command
I/O0=0 Successful Program
I/O0=1 Error in Program
26
Preliminary
K9T1G08B0M
FLASH MEMORY
Device Operation
PAGE READ
Upon initial device power up, the device defaults to Read1 mode. This operation is also initiated by writing 00h to the command regis-
ter along with four address cycles. Once the command is latched, it does not need to be written for the following page read operation.
Three types of operations are available : random read, serial page read and sequential row read.
The random read mode is enabled when the page address is changed. The 528 bytes of data within the selected page are transferred
to the data registers in less than 15µs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the
output of R/B pin. If CE goes high before the device returns to Ready, the random read operation is interrupted and Busy returns to
Ready as the defined by tCRY. Since the operation was aborted, the serial page read does not output valid data. Once the data in a
page is loaded into the registers, they may be read out in 50ns cycle time by sequentially pulsing RE. High to low transitions of the RE
clock output the data stating from the selected column address up to the last column address.
The way the Read1 and Read2 commands work is like a pointer set to either the main area or the spare area. The spare area of 512
to 527 byte may be selectively accessed by writing the Read2 command. Addresses A0 to A3 set the starting address of the spare
area while addresses A4 to A7 are ignored. The Read1 command(00h/01h) is needed to move the pointer back to the main area. Fig-
ures 8 to 10 show typical sequence and timings for each read operation.
After the data of last column address is clocked out, the next page is automatically selected for sequential row read. Waiting 15µs
again allows reading the selected page. The sequential row read operation is terminated by bringing CE high. Unless the operation
is aborted, the page address is automatically incremented for sequential row read as in Read1 operation and spare sixteen bytes of
each page may be sequentially read. The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of
a block is readout, the sequential read operation must be terminated by bringing CE high. When the page address moves onto the
next block, read command and address must be given. Figures 9, 10 show typical sequence and timings for sequential row read
operation.
Figure 8-1. Read1 Operation
CLE
CE
WE
ALE
tR
R/B
RE
00h
Start Add.(4Cycle)
A0 ~ A7 & A9 ~ A26
Data Output(Sequential)
I/O0~7
(00h Command)
Main array
(01h Command)
1)
1st half array 2st half array
Data Field
Spare Field
Data Field
Spare Field
NOTE :
1) After data access on 2nd half array by 01h command, the start pointer is automatically moved to 1st half array (00h) at next cycle.
27
Preliminary
K9T1G08B0M
FLASH MEMORY
Figure 8-2. Read2 Operation
CLE
On K9T1G08B0M-Y,P or K9T1G08B0M-V,F
CE must be held low during tR
CE
WE
ALE
R/B
RE
tR
50h
Data Output(Sequential)
Spare Field
Start Add.(4Cycle)
I/OX
A0 ~ A3 & A9 ~ A26
(A4 ~ A7 : Don’t care)
Main array
Data Field
Spare Field
Figure 9. Sequential Row Read1 Operation
tR
tR
tR
R/B
Data Output
1st
Data Output
Data Output
I/OX
00h
01h
Start Add.(4Cycle)
A0 ~ A7 & A9 ~ A26
2nd
(528 Byte)
Nth
(528 Byte)
( 00h Command)
( 01h Command)
1st half array
2nd half array
1st half array
2nd half array
1st
1st
2nd
Nth
Block
2nd
Nth
Data Field
Spare Field
Data Field
Spare Field
The Sequential Read 1 and 2 operation is allowed only within a block and after the last page of a block is read-
out, the sequential read operation must be terminated by bringing CE high. When the page address moves onto
the next block, read command and address must be given.
28
Preliminary
K9T1G08B0M
FLASH MEMORY
Figure 10. Sequential Row Read2 Operation
tR
tR
tR
R/B
Start Add.(4Cycle)
Data Output
1st
I/OX
50h
Data Output
Data Output
A0 ~ A3 & A9 ~ A26
(A4 ~ A7 : Don’t Care)
2nd
(16Byte)
Nth
(16Byte)
1st
Block
Nth
Data Field
Spare Field
PAGE PROGRAM
The device is programmed basically on a page basis, but it does allow multiple partial page programing of a byte or consecutive bytes
up to 528 byte, in a single page program cycle. The number of consecutive partial page programming operation within the same page
without an intervening erase operation must not exceed 1 for main array and 2 for spare array. The addressing may be done in any
random order in a block. A page program cycle consists of a serial data loading period in which up to 528 bytes of data may be loaded
into the page register, followed by a non-volatile programming period where the loaded data is programmed into the appropriate cell.
Serial data loading can be started from 2nd half array by moving pointer. About the pointer operation, please refer to the attached
technical notes.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the four cycle address input and
then serial data loading. The bytes other than those to be programmed do not need to be loaded.The Page Program confirm com-
mand(10h) initiates the programming process. Writing 10h alone without previously entering the serial data will not initiate the pro-
gramming process. The internal write state control automatically executes the algorithms and timings necessary for program and
verify, thereby freeing the system controller for other tasks. Once the program process starts, the Read Status Register command
may be entered, with RE and CE low, to read the status register. The system controller can detect the completion of a program cycle
by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are
valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 11).
The internal write verify detects only errors for "1"s that are not successfully programmed to "0"s. The command register remains in
Read Status command mode until another valid command is written to the command register.
Figure 11. Program & Read Status Operation
tPROG
R/B
Pass
I/O0~7
80h
Address & Data Input
I/O0
Fail
10h
70h
A0 ~ A7 & A9 ~ A26
528 Bytes Data
29
Preliminary
K9T1G08B0M
FLASH MEMORY
BLOCK ERASE
The Erase operation is done on a block(16K Bytes) basis. Block address loading is accomplished in three cycles initiated by an
Erase Setup command(60h). Only address A14 to A26 is valid while A9 to A13 is ignored. The Erase Confirm command(D0h) following
the block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 12 details the sequence.
Figure 12. Block Erase Operation
tBERS
R/B
Pass
I/OX
60h
I/O0
Fail
70h
Address Input(3Cycle)
Block Add. : A14 ~ A26
D0h
Multi-Plane Page Program
Multi-Plane Page Program is an extension of Page Program, which is executed for a single plane with 528 bytes page register. Since
the device is equipped with four memory planes, activating the four sets of 528 bytes page register enables a simultaneous program-
ming of four pages. Partial activation of four planes is also permitted.
After writing the first set of data up to 528 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program (10h) is inputted to finish data-loading of the current plane and move to the next plane. Since no programming
process is involved, R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate
71h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set
of data for one of the other planes is inputted with the same command and address sequences. After inputting data for the last plane,
actual True Page Program (10h) instead of dumy Page Program command (11h) must be followed to start the programming process.
The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are programmed simulta-
neously, pass/fail status is available for each page when the program operation completes. The extended status bits (I/O1 through I/
O 4) are checked by inputting the Read Multi-Plane Status Register. Status bit of I/O 0 is set to "1" when any of the pages fails. Multi-
Plane page Program with "01h" pointer is not supported, thus prohibited.
Figure 13. Four-Plane Page Program
tDBSY
tPROG
10h
tDBSY
11h
tDBSY
11h
R/B
I/OX
Address &
Data Input
Address &
Data Input
Address &
Data Input
Address &
Data Input
71h
80h
80h
80h
80h
80h
80h
11h
80h
80h
A0 ~ A7 & A9 ~ A26
528 bytes
10h
11h
11h
11h
Data
Input
Plane 3
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Block 3
Block 7
Block 2
Block 6
Block 1
Block 5
Block 0
Block 4
Block 8,187
Block 8,191
Block 8,186
Block 8,190
Block 8,185
Block 8,189
Block 8,184
Block 8,188
30
Preliminary
K9T1G08B0M
FLASH MEMORY
Restriction in addressing with Multi Plane Page Program
While any block in each plane may be addressable for Multi-Plane Page Program, the five least significant addresses(A9-A13) for
the selected pages at one operation must be the same. Figure 14 shows an example where 2nd page of each addressed block is
selected for four planes. However, any arbitrary sequence is allowed in addressing multiple planes as shown in Figure15.
Figure 14. Multi-Plane Program & Read Status Operation
Plane 3
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Block 0
Block 2
Block 3
Block 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 0
Page 1
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Page 30
Page 31
Figure 15. Addressing Multiple Planes
Plane 1
Plane3
80h
10h
Plane 2
Plane 0
80h
11h
80h
11h
80h
11h
Figure 16. Multi-Plane Page Program & Read Status Operation
tPROG
R/B
Last Plane input
Pass
I/O0~7
80h
Address & Data Input
I/O
10h
71h
A0 ~ A7 & A9 ~ A26
528 bytes
Fail
Multi-Plane Block Erase
Basic concept of Multi-Plane Block Erase operation is identical to that of Multi-Plane Page Program. Up to four blocks, one from each
plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command followed by three
address cycles) may be repeated up to four times for erasing up to four blocks. Only one block should be selected from each plane.
The Erase Confirm command initiates the actual erasing process. The completion is detected by analyzing R/B pin or Ready/Busy
status (I/O 6). Upon the erase completion, pass/fail status of each block is examined by reading extended pass/fail status(I/O 1
through I/O 4).
Figure 17. Four Block Erase Operation
R/B
I/OX
tBERS
Address
(3 Cycle)
Address
(3 Cycle)
Address
(3 Cycle)
Address
(3 Cycle)
60h
D0h
71h
60h
60h
60h
Pass
I/O
A0 ~ A7 & A9 ~ A26
Fail
31
Preliminary
K9T1G08B0M
FLASH MEMORY
Copy-Back Program
The copy-back program is configured to quickly and efficiently rewrite data stored in one page within the plane to another page within
the same plane without utilizing an external memory. Since the time-consuming sequently-reading and its re-loading cycles are
removed, the system performance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of
the block also need to be copied to the newly assigned free block. The operation for performing a copy-back program is a sequential
execution of page-read without burst-reading cycle and copying-program with the address of destination page. A normal read opera-
tion with "00h" command and the address of the source page moves the whole 528bytes data into the internal page registers. As
soon as the device returns to Ready state, Page-Copy Data-input command (8Ah) with the address cycles of destination page fol-
lowed may be written. The Program Confirm command (10h) is required to actually begin the programming operation. Copy-Back
Program operation is allowed only within the same memory plane. Once the Copy-Back Program is finished, any additional partial
page programming into the copied pages is prohibited before erase. A14 and A15 must be the same between source and target
page. Figure18 shows the command sequence for single plane operation. "When there is a program-failure at Copy-Back opera-
tion, error is reported by pass/fail status. But, if Copy-Back operations are accumulated over time, bit error due to charge
loss is not checked by external error detection/correction scheme. For this reason, two bit error correction is recom-
mended for the use of Copy-Back operation."
Figure 18. 1-page Copy-Back program Operation
tR
tPROG
R/B
I/OX
Add.(4Cycles)
Pass
Add.(4Cycles)
00h
I/O0
Fail
10h
8Ah
70h
A0 ~ A7 & A9 ~ A26
Source Address
A0 ~ A7 & A9 ~ A26
Destination Address
32
Preliminary
K9T1G08B0M
FLASH MEMORY
Multi-Plane Copy-Back Program
Multi-Plane Copy-Back Program is an extension of one page Copy-Back Program into four plane operation. Since the device is
equipped with four memory planes, activating the four sets of 528 bytes page registers enables a simultaneous Multi-Plane Copy-
Back programming of four pages. Partial activation of four planes is also permitted.
First, normal read operation with the "00h"command and address of the source page moves the whole 528 byte data into internal
page buffers. Any further read operation for transferring the addressed pages to the corresponding page register must be executed
with "03h" command instead of "00h" command. Any plane may be selected without regard to "00h" or "03h". Up to four planes may
be addressed. Data moved into the internal page registers are loaded into the destination plane addresses. After the input of com-
mand sequences for reading the source pages, the same procedure as Multi-Plane Page programming except for a replacement
address command with "8Ah" is executed. Since no programming process is involved during data loading at the destination plane
address , R/B remains in Busy state for a short period of time(tDBSY). Read Status command (standard 70h or alternate 71h) may
be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/O 6). After inputting data for the
last plane, actual True Page Program (10h) instead of dummy Page Program command (11h) must be followed to start the program-
ming process. The operation of R/B and Read Status is the same as that of Page Program. Since maximum four pages are pro-
grammed simultaneously, pass/fail status is available for each page when the program operation completes. No pointer operation is
supported with Multi-Plane Copy-Back Program. Once the Multi-Plane Copy-Back Program is finished, any additional partial
page programming into the copied pages is prohibited before erase once the Multi-Plane Copy-Back Program is finished.
Figure 19. 4-plane Copy-Back Program
Max Three Times Repeatable
03h
03h
00h
03h
Source
Address
Input
Plane 3
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Block 3
Block 7
Block 2
Block 6
Block 1
Block 5
Block 0
Block 4
Block 8,187
Block 8,191
Block 8,185
Block 8,186
Block 8,190
Block 8,184
Block 8,188
Block 8,189
Max Three Times Repeatable
8Ah
10h
8Ah
11h
8Ah
11h
8Ah
11h
Destination
Address
Input
Plane 3
(2,048 Blocks)
Plane 0
(2,048 Blocks)
Plane 2
(2,048 Blocks)
Plane 1
(2,048 Blocks)
Block 3
Block 7
Block 2
Block 6
Block 1
Block 5
Block 0
Block 4
Block 8,187
Block 8,191
Block 8,186
Block 8,190
Block 8,185
Block 8,189
Block 8,184
Block 8,188
33
Preliminary
K9T1G08B0M
FLASH MEMORY
≈
≈
≈
≈
≈
≈
34
Preliminary
K9T1G08B0M
FLASH MEMORY
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether
the program or erase operation is completed successfully. After writing 70h command to the command register, a read cycle outputs
the content of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows
the system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE
does not need to be toggled for updated status. Refer to table 4 for specific Status Register definitions. The command register
remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read
cycle, a read command(00h or 50h) should be given before sequential page read cycle.
For Read Status of Multi Plane Program/Erase, the Read Multi-Plane Status command(71h) should be used to find out whether
multi-plane program or erase operation is completed, and whether the program or erase operation is completed successfully. The
pass/fail status data must be checked only in the Ready condition after the completion of Multi-Plane program or erase operation.
Table4. Read Staus Register Definition
I/O No.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
Status
Definition by 70h Command
Definition by 71h Command
Pass : "0"(1)
Fail : "1"
Fail : "1"
Total Pass/Fail
Plane 0 Pass/Fail
Plane 1 Pass/Fail
Plane 2 Pass/Fail
Plane 3 Pass/Fail
Reserved
Pass : "0"
Fail : "1"
Pass : "0"(2)
Must be don’t -cared
Must be don’t -cared
Must be don’t -cared
Must be don’t -cared
Must be don’t -cared
Busy : "0"
Pass : "0"(2)
Fail : "1"
Fail : "1"
Fail : "1"
Pass : "0"(2)
Pass : "0"(2)
Must be don’t-cared
Busy : "0"
Device Operation
Write Protect
Ready : "1"
Ready : "1"
Protected : "0"
Not Protected : "1"
Protected : "0"
Not Protected : "1"
NOTE : 1. I/O 0 describes combined Pass/Fail condition for all planes. If any of the selected multiple pages/blocks fails in Program/
Erase operation, it sets "Fail" flag.
2. The pass/fail status applies only to the corresponding plane.
Read ID
The device has 2 types of Read ID command, i.e. Read ID (1) command 90h and Read ID (2) command 91h.
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code (79h), Reserved(A5h), Multi plane oper-
ation code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command regis-
ter remains in Read ID mode until further commands are issued to it.
Read ID (2) command 91h provides Multi-Plane(4-Plane) operations availability. If ID code read out by 91h is 20h, it indicates the
device has Multi-Plane(4-Plane) operations.
Figure 21-1 & 21-2 show the operation sequence.
Figure 21-1. Read ID (1) Operation
CLE
tCEA
CE
WE
tAR
ALE
RE
tWHR
tREA
79h
Device code
I/O0~7
90h
ECh
00h
A5h
C0h
Maker code
Address. 1cycle
Multi-Plane code
35
Preliminary
K9T1G08B0M
FLASH MEMORY
Figure 21-2. Read ID (2) Operation
CLE
CE
tCEA
WE
ALE
RE
tAR
tWHR
tREA
I/O0~7
91h
20h
00h
Extended ID Code
Address. 1cycle
RESET
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random
read, program or erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no
longer valid, as the data will be partially programmed or erased. The command register is cleared to wait for the next command, and
the Status Register is cleared to value C0h when WP is high. Refer to table 5 for device status after reset operation. If the device is
already in reset state a new reset command will not be accepted by the command register. The R/B pin transitions to low for tRST
after the Reset command is written. Refer to Figure 22 below.
Figure 22. RESET Operation
tRST
R/B
I/O0~7
FFh
Table5. Device Status
After Power-up
After Reset
Operation Mode
Read 1
Waiting for next command
36
Preliminary
K9T1G08B0M
FLASH MEMORY
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 23). Its value can be
determined by the following guidance.
Rp
ibusy
VCC
Ready Vcc
R/B
open drain output
VOH
VOL : 0.4V, VOH : 2.4V
VOL
CL
Busy
tf
tr
GND
Device
@ Vcc = 2.7V, Ta = 25°C , CL = 30pF
300n
3m
2.3
Ibusy
200n
100n
1.1
2m
1m
120
90
tr
60
30
0.75
2.3
2.3
2.3
0.55
tf
2.3
4K
1K
2K
3K
Rp(ohm)
Fig 23 Rp vs tr ,tf & Rp vs ibusy
Rp value guidance
VCC(Max.) - VOL(Max.)
IOL + ΣIL
2.5V
Rp(min) =
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
37
Preliminary
K9T1G08B0M
FLASH MEMORY
Data Protection & Power-up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.8V. WP pin provides hardware protection and is recommended to be kept at VIL
during power-up and power-down. A recovery time of minimum 10µs is required before internal circuit gets ready for any command
sequences as shown in Figure 24. The two step command sequence for program/erase provides additional software protection.
Figure 24. AC Waveforms for Power Transition
~ 2.0V
~ 2.0V
VCC
High
WP
WE
10µs
38
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