K7D161888M-HC330_技术文档

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K7D161888B

1Mx18 SRAM

Document Title

16M DDR SYNCHRONOUS SRAM

Revision History

Rev No.

History

DraftData

Remark

Rev. 0.0

Initial document.

Feb. 2003

Advance

Rev. 0.1

Remove K7D163688B

Jun. 2003

Advance

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters

of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Rev 0.1

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Jun. 2003

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K7D161888B

1Mx18 SRAM

FEATURES

• 1Mx18 Organizations.

• Registered Addresses, Burst Control and Data Inputs.

• Registered Outputs.

• 1.8V VDD/1.5V VDDQ.(1.9V max VDDQ )

• HSTL Input and Outputs.

• Single Differential HSTL Clock.

• Synchronous Pipeline Mode of Operation with Self-Timed

Late Write.

• Double and Single Data Rate Burst Read and Write.

• Burst Count Controllable With Max Burst Length of 4

• Interleved and Linear Burst mode support

• Bypass Operation Support

• Programmable Impedance Output Drivers.

• JTAG Boundary Scan (subset of IEEE std. 1149.1)

• 153(9x17) Pin Ball Grid Array Package(14mmx22mm)

• Free Running Active High and Active Low Echo Clock Output

Pin.

• Asynchronous Output Enable.

GENERAL DESCRIPTION

The K7D161888B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. They are organized as 1,048,576 words by

18 bits for K7D161888B, fabricated using Samsung's advanced CMOS technology.

Single differential HSTL level clock, K and K are used to initiate the read/write operation and all internal operations are self-timed. At

the rising edge of K clock, all addresses and burst control inputs are registered internally. Data inputs are registered one cycle after

write addresses are asserted(Late Write), at the rising edge of K clock for single data rate (SDR) write operations and at rising and

falling edge of K clock for a double data rate (DDR) write operations.

Data outputs are updated from output registers off the rising edges of K clock for SDR read operations, and off the rising and falling

edges of K clock for DDR read operations. Free running echo clocks are supported which are representive of data output access

time for all SDR and DDR operations.

The chip is operated with a single +1.8V power supply and is compatible with Extended HSTL input and output. The package is

9x17(153) Ball Grid Array balls on a 1.27mm pitch.

ORDERING INFORMATION

Maximum

Frequency

Part Number

Organization

K7D161888M-HC37

370MHz

333MHz

300MHz

250MHz

K7D161888M-HC33

K7D161888M-HC30

K7D161888M-HC25

1Mx18

Rev 0.1

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K7D161888B

1Mx18 SRAM

FUNCTIONAL BLOCK DIAGRAM

SA[0:19]

Address

Memory Array

1Mx18

20

18

Register

2:1

MUX

Dec.

(Burst Address)

CE

Clock

Buffer

Data Out

18x2

K,K

Data In

18x2

Burst

Counter

Comparator

S/A Array

W/D

Array

Advance

Control

(Burst Write

Address)

B1

B3

Write

Address

Register

SD/DD

18x2

20

18

(2 stage)

2 : 1 MUX

CE

Write Buffer

Synchronous

Select

CE

Strobe_out

&

B2

Echo Clock

Data In

Output

Buffer

R/W control

R/W

Output

Register

(2 stage)

Data Output Strobe

Data Output Enable

State Machine

LD

Internal

Clock

18

Generator

XDIN

DQ

CQ,CQ

G

PIN DESCRIPTION

Pin Name

Pin Description

Differential Clocks

Synchronous Address Input

Pin Name

ZQ

Pin Description

K, K

SA

Output Driver Impedance Control Input

JTAG Test Clock

TCK

TMS

TDI

SA0, SA1

DQ

Synchronous Burst Address Input (SA0 = LSB)

Synchronous Data I/O

JTAG Test Mode Select

JTAG Test Data Input

JTAG Test Data Output

HSTL Input Reference Voltage

Power Supply

CQ, CQ

B1

Differential Output Echo Clocks

Load External Address

TDO

VREF

VDD

B2

Burst R/W Enable

B3

Single/Double Data Selection

Asynchronous Output Enable

Linear Burst Order

VDDQ

VSS

Output Power Supply

GND

G

LBO

NC

No Connection

Rev 0.1

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K7D161888B

1Mx18 SRAM

PACKAGE PIN CONFIGURATIONS(TOP VIEW)

K7D161888B(1Mx18)

1

2

3

SA

4

5

ZQ

B1

6

SA

7

SA

8

9

A

B

C

D

E

F

VSS

NC

VDDQ

DQB9

VDDQ

NC

SA

VDDQ

NC

VSS

DQA8

VSS

NC

SA

VSS

SA

VSS

SA

VSS

DQB4

VSS

NC

SA

G

SA

VDDQ

DQA7

VDDQ

NC

SA

VSS

VDD

VSS

VDD

VSS

LBO

VDD

VSS

SA

VDD

VREF

VDD

K

VSS

VDD

VSS

VDD

VSS

MODE

VDD

VSS

SA

VDDQ

CQ1

VDDQ

NC

VSS

NC

VSS

DQA5

VSS

NC

VSS

DQA3

VSS

NC

VSS

SA

VSS

DQA4

VSS

NC

G

H

J

VSS

DQB1

VSS

NC

VSS

DQB6

VSS

NC

VDDQ

DQA2

VDDQ

NC

K

VDDQ

DQB2

VDDQ

NC

VDD

B2

VSS

DQA1

VSS

NC

K

L

VSS

DQB3

VSS

NC

VSS

DQB5

VSS

SA

B3

VDDQ

CQ1

VDDQ

NC

M

N

P

R

T

VDD

VREF

VDD

SA1

SA0

TCK

VDDQ

DQB7

VDDQ

NC

VSS

DQ6

VSS

NC

VSS

DQB8

VSS

VDD

SA

VDD

SA

VDDQ

DQA9

VDDQ

VSS

TDI

VSS

TDO

U

VDDQ

TMS

NC

VSS

* Mode Pin(6L)is a internally NC.

Rev 0.1

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K7D161888B

1Mx18 SRAM

Read Operation(Single and Double)

During SDR read operations, addresses and controls are registered at the first rising edge of K clock and then the internal array is

read between first and second rising edges of K clock. Data outputs are updated from output registers off the second rising edge of

K clock. During DDR read operations, addresses and controls are registered at the first rising edge of K clock, and then the internal

array is read twice between first and second rising edges of K clock. Data outputs are updated from output registers sequentially by

burst order off the second rising and falling edge of K clock.

Interleave and linear burst operation is controlled by LBO pin and the burst count is controllable with the maximum burst length of 4.

To avoid data contention,at least one NOP operations are required between the last read and the first write operation.

Write Operation(Late Write)

During SDR write operations, addresses and controls are registered at the first rising edge of K clock and data inputs are registered

at the following rising edge of K clock. During DDR write operations, addresses and controls are registered at the first rising edge of

K clock and data inputs are registered twice at the following rising and falling edge of K clock. Write addresses and data inputs are

stored in the data in registers until the next write operation, and only at the next write opeation are data inputs fully written into SRAM

array.

Echo clock operation

Free running type of Echo clocks are generated from K clock regardless of read, write and NOP operations. They will stop operation

only when K clock is in the stop mode.

Echo clocks are designed to represent data output access time and this allows the echo clocks to be used as reference to capture

data outputs outputs.

Bypass Read Operation

Bypass read operation occurs when the last write operation is followed by a read operation where write and read addresses are

identical. For this case, data outputs are from the data in registers instead of SRAM array.

Programmable Impedance Output Driver

The data output and echo clock driver impedance are adjusted by an external resistor, RQ, connected between ZQ pin and VSS, and

are equal to RQ/5. For example, 250W resistor will give an output impedance of 50W. Output driver impedance tolerance is 15% by

test(10% by design) and is periodically readjusted to reflect the changes in supply voltage and temperature. Impedance updates

occur early in cycles that do not activate the outputs, such as deselect cycles. They may also occur in cycles initiated with G high. In

all cases impedance updates are transparent to the user and do not produce access time "push-outs" or other anomalous behavior

in the SRAM. Impedance updates occur no more often than every 32 clock cycles. Clock cycles are counted whether the SRAM is

selected or not and proceed regardless of the type of cycle being executed. Therefore, the user can be assured that after 33 contin-

uous read cycles have occurred, an impedance update will occur the next time G are high at a rising edge of the K clock. There are

no power up requirements for the SRAM. However, to guarantee optimum output driver impedance after power up, the SRAM needs

1024 non-read cycles.

Rev 0.1

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K7D161888B

1Mx18 SRAM

TRUTH TABLE

K

L

•

G

X

L

B1

X

H

L

B2

X

L

B3

X

H

L

DQ

Hi-Z

DOUT

DIN

Operation

Clock Stop

No Operation, Pipeline High-Z

Load Address, Single Read

Load Address, Double Read

Load Address, Single Write

Load Address, Double Write

Increment Address, Continue

•

H

L

•

L

•

X

L

H

L

•

L

DIN

•

H

X

B

NOTE : - B(Both) is DIN in write cycle and DOUT in read cycle. Byte write function is not supported. X means "Don't Care".

- K & K are complementary.

BURST SEQUENCE TABLE

4 Burst Operation for Interleaved Burst (LBO = VDDQ)

Interleaved Burst

Case 1

Case 2

Case 3

Case 4

A1

A0

A1

A0

A1

A0

A1

A0

First Address

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

Fourth Address

NOTE : - For Interleave BurstLBO = VDDQ is recommended. If LBO = VDD, it must not exceed 1.9V.

4 Burst Operation for Linear Burst (LBO = VSS)

Case 1

Case 2

Case 3

Case 4

Linear Burst Mode

A1

A0

A1

A0

A1

A0

A1

A0

First Address

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

1

0

Fourth Address

Rev 0.1

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K7D161888B

1Mx18 SRAM

BUS CYCLE STATE DIAGRAM

LOAD

NEW ADDRESS

READ

SDR

WRITE

SDR

READ

DDR

WRITE

DDR

INCREMENT

ADDRESS

INCREMENT

ADDRESS

INCREMENT

ADDRESS

INCREMENT

ADDRESS

POWER

UP

NO OP

NOTE :

1. State transitions ; B1 =(Load Address), B1=(Increment Address, Continue)

B2 =(Read), B2 =(Write)

B3 =(Single Data Rate),B3 =(Double Data Rate)

Rev 0.1

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K7D161888B

1Mx18 SRAM

ABSOLUTE MAXIMUM RATINGS

Parameter

Core Supply Voltage Relative to VSS

Output Supply Voltage Relative to V SS

Voltage on any pin Relative to VSS

Output Short-Circuit Current(per I/O)

Storage Temperature

Symbol

VDD

Value

-0.5 to 2.3

-0.5 to VDDQ+0.5

25

Unit

V

VDDQ

VIN

V

IOUT

mA

°C

TSTR

-55 to 125

NOTE : Power Dissipation Capability will be dependent upon package characteristics and use environment. See enclosed thermal impedance data.

Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stressrating only

and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not

implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

RECOMMENDED DC OPERATING CONDITIONS

Parameter

Core Power Supply Voltage

Output Power Supply Voltage

Input High Level Voltage

Input Low Level Voltage

Input Reference Voltage

Symbol

Min

Typ

1.8

1.5

-

Max

1.9

Unit

V

Note

VDD

1.7

VDDQ

VIH

1.4

1.9

V

VREF+0.1

-0.3

VDDQ+0.3

VREF-0.1

1.0

V

1, 2

1, 3

VIL

-

V

VREF

0.68

0.75

V

NOTE :1. These are DC test criteria. DC design criteria is VREF±50mV. The AC VIH/VIL levels are defined separately for measuring

timing parameters.

2. VIH (Max)DC=VDDQ+0.3, VIH (Max)AC=2.6V (2.1V for DQs) (pulse width £ 20% of cycle time).

3. VIL (Min)DC=-0.3V, VIL (Min)AC=-1.0V (-0.5V for DQs) (pulse width £ 20% of cycle time).

DC CHARACTERISTICS

Min

Max

Parameter

Symbol

Unit

Note

IDD37

Average Power Supply Operating Current

(Cycle time = tKHKH min)

IDD33

IDD30

IDD25

-

TBD

mA

1,2

1

Stop Clock Standby Current

ISB1

-

TBD

mA

(VIN=VDD-0.2V or 0.2V fixed, K=Low, K=High)

Input Leakage Current

(VIN=VSS or VDDQ)

ILI

-1

1

mA

Output Leakage Current

(VOUT=VSS or VDDQ)

ILO

Output High Voltage(Programmable Impedance Mode)

Output Low Voltage(Programmable Impedance Mode)

Output High Voltage(IOH=-0.1mA)

VOH1

VOL1

VOH2

VOL2

VDDQ /2

VSS

VDDQ

VDDQ/2

VDDQ

0.2

V

3

4

5

VDDQ-0.2

VSS

Output Low Voltage(IOL=0.1mA)

NOTE :1. Minimum cycle. IOUT=0mA.

2. 50% read cycles.

3. |IOH|=(VDDQ/2)/(RQ/5)±15% @VOH=VDDQ /2 for 175W £ RQ £ 350W.

4. |IOL|=(VDDQ/2)/(RQ/5)±15% @VOL=VDDQ /2 for 175W £ RQ £ 350W.

5. Minimum Impedance Mode when ZQ pin is connected to VSS.

Rev 0.1

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K7D161888B

1Mx18 SRAM

PIN CAPACITANCE

Parameter

Input Capacitance

Symbol

CIN

Test Condition

VIN=0V

TYP

Max

Unit

pF

-

4

5

Data Output Capacitance

COUT

VOUT=0V

pF

NOTE : Periodically sampled and not 100% tested.(TA=25°C, f=1MHz)

AC TEST CONDITIONS(TA=0 to 70°C, VDD=1.7 - 1.9V, VDDQ=1.5V)

Parameter

Input High/Low Level

Symbol

VIH/VIL

VREF

Value

Unit

Note

1.25/0.25

0.75

V

-

Input Reference Level

Input Rise/Fall Time

TR/TF

0.5/0.5

ns

V

Output Timing Reference Level

Clock Input Timing Reference Level

Output Load

0.75

Cross Point

See Below

V

AC TEST OUTPUT LOAD

50W

0.75V

50W

5pF

25W

DQ

0.75V

50W

0.75V

5pF

Rev 0.1

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K7D161888B

1Mx18 SRAM

AC TIMING CHARACTERISTICS

-37

-33

-30

-25

PARAMETER

SYMBOL

UNITS NOTES

Max

Min

Max

Min

Max

Min

Max

Min

Clock

1

Clock Cycle Time

tKHKH

tKHKL

tKLKH

2.7

1.3

-

3.0

1.3

-

3.3

1.5

-

4.0

1.7

-

ns

Clock High Pulse Width

Clock Low Pulse Width

Setup Times

Address Setup Time

Control(B1,B2,B3) Setup Time

Data Setup Time

tAVKH

tBVKH

tDVKX

0.4

-

0.4

-

0.4

0.3

-

0.5

0.4

-

ns

0.25

2

Hold Times

Address Hold Time

tKHAX

tKHBX

tKXDX

0.4

-

0.4

-

0.4

0.3

-

0.5

0.4

-

ns

Control(B1,B2,B3) Hold Time

Data Hold Time

0.25

Output Times

Echo Clock High Pulse Width

Echo Clock Low Pulse Width

Clock to Echo Clock Valid

Data Output Tracking

G Low to Output Valid

G High to Output High-Z

tCHCL

tCLCH

tKXCV

tQTRK

tGLQV

tGHQHZ

tKHKL-0.1 tKHKL+0.1 tKHKL-0.1 tKHKL+0.1 tKHKL-0.2 tKHKL+0.2 tKHKL-0.3 tKHKL+0.3

tKLKH-0.1 tKLKH+0.1 tKLKH-0.1 tKLKH+0.1 tKLKH -0.2 tKLKH+0.2 tKLKH-0.3 tKLKH+0.3

ns

2

0.5

2.3

0.20

1.7

0.5

2.3

0.20

1.8

0.5

2.3

0.20

1.9

0.5

2.3

0.20

2.1

-0.20

2,3

-

1.7

1.8

1.9

2.1

Notes: 1. The maximum cycle time must be limited to guarantee AC timing specification.

2. This parameter is guaranteed by design, and may not be tested at values shown in the table.

3. This parameter refers to CQ and CQ rising and falling edges.

4. K and K Clocks must be used differencitally to meet AC timing specifications.

Rev 0.1

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K7D161888B

1Mx18 SRAM

TIMING WAVEFORMS FOR DOUBLE DATA RATE CYCLES

(Burst Length=4, 2)

READ

CONTINUE READ

READ

CONTINUE READ

(burst of 2)

WRITE

CONTINUE

READ

NOP

READ

(burst of 4)

CONTINUE

NOP

WRITE

(burst of 4)

READ

(burst of 4)

9

1

2

4

5

7

3

6

8

10

11

12

K

tKHKH

B1

B2

tBVKH

tKHBX

B3

SA

A0

A5

A1

A2

A3

tAVKH

tKHAX

G

tKHDX

tGHQZ

tGLQV

tGLQX

tGHQX

tDVKH

D21

DQ QX2

Q01

Q02

Q03

Q04

Q51

Q52

Q53

Q54 Q11

Q12

D22

D23

D24

Q31

tCHQV

tCHLZ

tCHQX

tKXCH

tCHQZ

CQ

DON’T CARE

UNDEFINED

NOTE

1. Q01 refers to output from address A. Q02 refers to output from the next internal burst address following A, etc.

2. Outputs are disabled(High-Z) one clock cycle after NOP detected or after no pending data requests are present.

3. Doing more than one Read Continue or Write Continue will cause the address to wrap around.

Rev 0.1

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K7D161888B

1Mx18 SRAM

TIMING WAVEFORMS FOR SINGLE DATA RATE CYCLES

(Burst Length=4, 2, 1)

READ

WRITE

CONTINUE

READ

CONTINUE

NOP

READ

(burst of 4)

CONTINUE CONTINUE CONTINUE READ

NOP

WRITE

(burst of 2)

READ

(burst of 2)

(burst of 1)

1

2

3

4

5

6

7

8

9

10

11

12

K

tKHKL

tKLKH

tKHKH

K

B1

B2

B3

tBVKH

tKHBX

A0

A1

A2

A3

SA

G

tDVKH

tAVKH

tKHAX

tKHDX

tGHQZ

tGLQV

tGLQX

tGHQX

DQ

Q01

Q02

Q03

Q04

Q11

QX1

D21

D22

Q31

tKXCH

tCHQV

tCHQX

tCHLZ

tCHQZ

CQ

DON’T CARE

UNDEFINED

NOTE :

1. Q01 refers to output from address A0. Q02 refers to output from the next internal burst address following A0, etc.

2. Outputs are disabled(High-Z) one clock cycle after NOP detected or after no pending data requests are present.

3. This devices supports cycle lengths of 1, 2, 4. Continue(B1=HIGH, B2=HIGH, B3=X) up to three times following a B1 operation. Any further

Continue assertions constitute invalid operations.

4. This device will have an address wraparound if further Continues are applied.

Rev 0.1

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K7D161888B

1Mx18 SRAM

IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG

The SRAM provides a limited set of IEEE standard 1149.1 JTAG functions. This is to test the connectivity during manufacturing

between SRAM, printed circuit board and other components. Internal data is not driven out of SRAM under JTAG control. In conform-

ance with IEEE 1149.1, the SRAM contains a TAP controller, Instruction Register, Bypass Register and ID register. The TAP control-

ler has a standard 16-state machine that resets internally upon power-up, therefore, TRST signal is not required. It is possible to use

this device without utilizing the TAP. To disable the TAP controller without interfacing with normal operation of the SRAM, TCK must

be tied to VSS to preclude mid level input. TMS and TDI are designed so an undriven input will produce a response identical to the

application of a logic 1, and therefore can be left unconnected. But they may also be tied to VDD through a resistor. TDO should be

left unconnected.

JTAG Block Diagram

JTAG Instruction Coding

Notes

IR2 IR1 IR0 Instruction

TDO Output

0

1

0

1

0

1

0

1

0

1

0

1

0

1

EXTEST

IDCODE

Boundary Scan Register

Identification Register

1

2

1

3

4

3

SAMPLE-Z Boundary Scan Register

BYPASS

SAMPLE

BYPASS

Bypass Register

Boundary Scan Register

Bypass Register

SRAM

CORE

SA

NOTE :

1. Places DQs in Hi-Z in order to sample all input data regardless of other

SRAM inputs.

TDI

BYPASS Reg.

2. TDI is sampled as an input to the first ID register to allow for the serial

shift of the external TDI data.

3. Bypass register is initiated to VSS when BYPASS instruction is

invoked.

The Bypass Register also holds serially loaded TDI when exiting

the Shift DR states.

4. SAMPLE instruction does not places DQs in Hi-Z.

TDO

Identification Reg.

Instruction Reg.

Control Signals

TAP Controller

TMS

TCK

TAP Controller State Diagram

Test Logic Reset

0

1

0

1

Run Test Idle

Select DR

Select IR

0

1

Capture DR

Capture IR

0

Shift IR

Shift DR

1

Exit1 IR

Exit1 DR

0

Pause DR

0

Pause IR

0

1

Exit2 DR

Exit2 IR

1

Update DR

0

1

Update IR

1

0

Rev 0.1

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K7D161888B

1Mx18 SRAM

SCAN REGISTER DEFINITION

Part

Instruction Register

3 bits

Bypass Register

ID Register

Boundary Scan

1M x 18

1 bits

32 bits

49 bits

ID REGISTER DEFINITION

Revision Number

Part Configuration

Vendor Definition

(17:12)

Samsung JEDEC Code

(11: 1)

Start Bit

(0)

Part

(31:28)

(27:18)

1M x 18

0000

01000 00011

XXXXXX

00001001110

1

BOUNDARY SCAN EXIT ORDER(x18)

26

27

28

29

30

31

32

4A

4C

3A

3B

3C

3D

2B

SA

DQ

SA

6A

6C

7A

7B

7C

7D

25

24

23

22

21

20

DQ

9B

8D

7F

19

18

17

33

34

1D

2F

DQ

CQ

DQ

9F

8H

16

15

35

3H

DQ

36

37

38

39

40

41

1H

5A

5B

5K

5L

4L

DQ

ZQ

B1

G

K

5C

5G

5H

6L

14

13

12

11

10

B2

K

B3

MODE

DQ

LBO

9K

42

43

2K

DQ

7K

9

1M

CQ

DQ

8M

9P

8

7

44

45

46

3M

2P

1T

DQ

SA

8T

7P

7T

6R

5T

5R

6

5

4

3

2

1

47

48

49

3P

3T

4R

SA

* Reserved for Mode Pin

Rev 0.1

Jun. 2003

- 14

Advance

K7D161888B

1Mx18 SRAM

JTAG DC OPERATING CONDITIONS

Parameter

Power Supply Voltage

Symbol

Min

1.7

1.5

-0.3

1.5

VSS

Typ

Max

1.9

Unit

V

Note

VDD

VIH

1.8

Input High Level

-

VDD+0.3

0.7

V

Input Low Level

VIL

V

Output High Voltage(IOH=-2mA)

Output Low Voltage(IOL=2mA)

VOH

VOL

VDD

V

0.2

V

NOTE : 1. The input level of SRAM pin is to follow the SRAM DC specification.

JTAG AC TEST CONDITIONS

Parameter

Input High/Low Level

Symbol

VIH/VIL

TR/TF

Min

Unit

V

Note

1.8/0.0

1.0/1.0

0.9

Input Rise/Fall Time

ns

V

Input and Output Timing Reference Level

NOTE : 1. See SRAM AC test output load on page 5.

1

JTAG AC Characteristics

Parameter

TCK Cycle Time

Symbol

Min

50

20

5

Max

Unit

Note

tCHCH

tCHCL

tCLCH

tMVCH

tCHMX

tDVCH

tCHDX

tCLQV

-

ns

TCK High Pulse Width

TCK Low Pulse Width

TMS Input Setup Time

TMS Input Hold Time

TDI Input Setup Time

TDI Input Hold Time

-

5

-

5

-

5

-

Clock Low to Output Valid

0

10

JTAG TIMING DIAGRAM

TCK

tCHCH

tCHCL

tCLCH

tMVCH

tCHMX

tCHDX

TMS

TDI

tDVCH

tCLQV

TDO

Rev 0.1

Jun. 2003

- 15

Advance

K7D161888B

1Mx18 SRAM

153 BGA PACKAGE DIMENSIONS

1.27

0.050

0.60 ± 0.10

0.024 ±0.004

9 8 7 6 5 4 3 2 1

0.56 ± 0.04

0.022 ±0.002

0.90 ± 0.10

0.035 ± 0.004

2.21

MAX

0.087

12.50 ±0.10

0.492 ±0.004

0.75 ±0.15

0.030 ±0.006

153-Æ

Æ 0.3/0.012MAX

14.00 ± 0.10

0.551 ± 0.004

0.15

MAX

0.006

TOP VIEW

BOTTOM VIEW

NOTE:

1. All Dimensions are in Millimeters.

2. Solder Ball to PCS Offset : 0.10 MAX.

3. PCB to Cavity Offset : 0.10 MAX.

153 BGA PACKAGE THERMAL CHARACTERISTICS

Parameter

Junction to Ambient(at still air)

Junction to Case

Symbol

Theta_JA

Theta_JC

Theta_JB

Thermal Resistance

Unit

°C/W

Note

TBD

Junction to Board

NOTE : 1. Junction temperature can be calculated by : TJ = TA + PD x Theta_JA.

Rev 0.1

Jun. 2003

- 16


型号：	K7D161888M-HC330
厂家：	SAMSUNG
描述：	DDR SRAM, 1MX18, CMOS, PBGA153, 14 X 22 MM, BGA-153 双倍数据速率静态存储器内存集成电路
文件：	总16页 (文件大小：168K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

K7D161888M-HC330 [SAMSUNG]

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