K7A321830C-QI20T [SAMSUNG]

Standard SRAM, 2MX18, 3.1ns, CMOS, PQFP100;

K7A321830C-QI20T


型号：	K7A321830C-QI20T
厂家：	SAMSUNG SEMICONDUCTOR
描述：	Standard SRAM, 2MX18, 3.1ns, CMOS, PQFP100 时钟静态存储器内存集成电路
文件：	总19页 (文件大小：424K)
下载：	下载PDF数据表文档文件

K7A323600M

1Mx36 & 2Mx18 Synchronous SRAM

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27 SAMSUNG

K7A323600M

1Mx36 & 2Mx18 Synchronous SRAM

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9 SAMSUNG

K7A323600M-FC14

Cache SRAM, 1MX36, 4ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC140

Cache SRAM, 1MX36, 4ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC200

Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC200

Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC22

Cache SRAM, 1MX36, 2.8ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC220

Cache SRAM, 1MX36, 2.8ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-FC25

Cache SRAM, 1MX36, 2.6ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, FBGA-165

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0 SAMSUNG

K7A323600M-HC16

Cache SRAM, 1MX36, 3.5ns, CMOS, PBGA119, BGA-119

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0 SAMSUNG

K7A323600M-HC20

Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA119, BGA-119

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0 SAMSUNG

K7A323600M-HC200

Cache SRAM, 1MX36, 3.1ns, CMOS, PBGA119, BGA-119

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0 SAMSUNG

K7A323600M-QC14

1Mx36 & 2Mx18 Synchronous SRAM

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15 SAMSUNG

K7A323600M-QC14

1Mx36 & 2Mx18 Synchronous SRAM

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2 SAMSUNG

K7A323600M-QC14

1Mx36 & 2Mx18 Synchronous SRAM

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13 SAMSUNG

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