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K6R1004C1D-JC(I)10 [SAMSUNG]

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.; 64Kx16位高速CMOS静态RAM （ 3.3V工作）工作在商用和工业温度范围。
K6R1004C1D-JC(I)10
型号： K6R1004C1D-JC(I)10
厂家： SAMSUNG    SAMSUNG
描述：

64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
64Kx16位高速CMOS静态RAM （ 3.3V工作）工作在商用和工业温度范围。
文件： 总10页 (文件大小：185K)
中文：  中文翻译
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PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
Document Title  
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
History  
Draft Data  
Remark  
Rev. 0.0  
Rev. 0.1  
Rev. 0.2  
Initial document.  
Speed bin modify  
Current modify  
May. 11. 2001  
June. 18. 2001  
September. 9. 2001  
Preliminary  
Preliminary  
Preliminary  
Rev. 1.0  
1. Delete 12ns speed bin.  
2. Change Icc for Industrial mode.  
Item  
December. 18. 2001  
Final  
Previous  
100mA  
85mA  
Current  
90mA  
75mA  
8ns  
ICC(Industrial)  
10ns  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 1.0  
December 2001  
- 1 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
1Mb Async. Fast SRAM Ordering Information  
Org.  
Part Number  
VDD(V)  
Speed ( ns )  
PKG  
Temp. & Power  
K6R1004C1D-JC(I) 10/12  
K6R1004V1D-JC(I) 08/10  
5
3.3  
5
10/12  
8/10  
256K x4  
J : 32-SOJ  
C : Commercial Temperature  
,Normal Power Range  
I : Industrial Temperature  
,Normal Power Range  
K6R1008C1D-J(T)C(I) 10/12  
K6R1008V1D-J(T)C(I) 08/10  
K6R1016C1D-J(T,E)C(I) 10/12  
K6R1016V1D-J(T,E)C(I) 08/10  
10/12  
8/10  
J : 32-SOJ  
T : 32-TSOP2  
128K x8  
64K x16  
3.3  
5
J : 44-SOJ  
T : 44-TSOP2  
E : 48-TBGA  
10/12  
8/10  
3.3  
Revision 1.0  
December 2001  
- 2 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
128K x 8 Bit High-Speed CMOS Static RAM(3.3V Operating)  
FEATURES  
GENERAL DESCRIPTION  
• Fast Access Time 8,10ns(Max.)  
• Low Power Dissipation  
The K6R1008V1D is a 1,048,576-bit high-speed Static Random  
Access Memory organized as 131,072 words by 8 bits.  
The K6R1008V1D uses 8 common input and output lines and  
has an output enable pin which operates faster than address  
access time at read cycle. The device is fabricated using  
SAMSUNG¢s advanced CMOS process and designed for  
high-speed circuit technology. It is particularly well suited for  
use in high-density high-speed system applications.  
The K6R1008V1D is packaged in a 400mil 32-pin plastic SOJ  
or TSOP2 forward.  
Standby (TTL)  
: 20mA(Max.)  
(CMOS) : 5mA(Max.)  
Operating K6R1008V1D-08: 80mA(Max.)  
K6R1008V1D-10: 65mA(Max.)  
• Single 3.3±0.3V Power Supply  
• TTL Compatible Inputs and Outputs  
• Fully Static Operation  
- No Clock or Refresh required  
• Three State Outputs  
• Center Power/Ground Pin Configuration  
• Standard Pin Configuration  
K6R1008V1D-J : 32-SOJ-400  
K6R1008V1D-T : 32-TSOP2-400CF  
• Operating in Commercial and Industrial Temperature range.  
PIN CONFIGURATION(Top View)  
A0  
A1  
1
2
3
4
5
6
7
8
9
32 A16  
31 A15  
30 A14  
29 A13  
28 OE  
27 I/O8  
26 I/O7  
25 Vss  
24 Vcc  
23 I/O6  
22 I/O5  
21 A12  
20 A11  
19 A10  
18 A9  
17 A8  
A2  
A3  
CS  
I/O1  
I/O2  
Vcc  
Vss  
SOJ/  
FUNCTIONAL BLOCK DIAGRAM  
TSOP2  
I/O3 10  
I/O4 11  
WE 12  
A4 13  
A5 14  
A6 15  
A7 16  
Clk Gen.  
Pre-Charge Circuit  
A0  
A1  
A2  
A3  
A4  
Memory Array  
512 Rows  
256x8 Columns  
A5  
A6  
A7  
A8  
Data  
Cont.  
I/O Circuit  
Column Select  
PIN FUNCTION  
I/O1~I/O8  
Pin Name  
A0 - A16  
WE  
Pin Function  
Address Inputs  
Write Enable  
Chip Select  
CLK  
Gen.  
CS  
A9 A10 A11 A12 A13 A14 A15 A16  
OE  
Output Enable  
Data Inputs/Outputs  
Power(+3.3V)  
Ground  
I/O1 ~ I/O8  
VCC  
CS  
WE  
OE  
VSS  
N.C  
No Connection  
Revision 1.0  
December 2001  
- 3 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
ABSOLUTE MAXIMUM RATINGS*  
Parameter  
Voltage on Any Pin Relative to VSS  
Voltage on VCC Supply Relative to VSS  
Power Dissipation  
Symbol  
VIN, VOUT  
VCC  
Rating  
-0.5 to 4.6  
-0.5 to 4.6  
1
Unit  
V
V
Pd  
W
Storage Temperature  
TSTG  
TA  
-65 to 150  
0 to 70  
°C  
°C  
°C  
Commercial  
Operating Temperature  
Industrial  
TA  
-40 to 85  
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and  
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.  
Exposure to absolute maximum rating conditions for extended periods may affect reliability.  
RECOMMENDED DC OPERATING CONDITIONS*(TA=0 to 70°C)  
Parameter  
Min  
Symbol  
Typ  
Max  
Unit  
V
Supply Voltage  
VCC  
3.0  
3.3  
3.6  
Ground  
VSS  
0
0
-
0
VCC + 0.3***  
0.8  
V
V
Input High Voltage  
Input Low Voltage  
VIH  
2.0  
V
VIL  
-0.3**  
-
*
The above parameters are also guaranteed at industrial temperature range.  
** VIL(Min) = -2.0V a.c(Pulse Width £ 8ns) for I £ 20mA.  
*** VIH(Max) = VCC + 2.0V a.c (Pulse Width £ 8ns) for I £ 20mA.  
DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=3.3±0.3V, unless otherwise specified)  
Min  
Max  
Parameter  
Symbol  
ILI  
Test Conditions  
Unit  
mA  
Input Leakage Current  
Output Leakage Current  
VIN=VSS to VCC  
-2  
2
ILO  
CS=VIH or OE=VIH or WE=VIL  
VOUT=VSS to VCC  
-2  
2
mA  
Operating Current  
Standby Current  
ICC  
Min. Cycle, 100% Duty  
CS=VIL, VIN=VIH or VIL, IOUT=0mA  
Com.  
Ind.  
8ns  
10ns  
8ns  
-
-
-
-
-
-
80  
65  
90  
75  
20  
5
mA  
10ns  
ISB  
Min. Cycle, CS=VIH  
mA  
ISB1  
f=0MHz, CS³ VCC-0.2V,  
VIN³ VCC-0.2V or VIN£0.2V  
Output Low Voltage Level  
Output High Voltage Level  
VOL  
VOH  
IOL=8mA  
-
0.4  
-
V
V
IOH=-4mA  
2.4  
* The above parameters are also guaranteed at industrial temperature range.  
CAPACITANCE*(TA=25°C, f=1.0MHz)  
Item  
Input/Output Capacitance  
Input Capacitance  
Symbol  
Test Conditions  
VI/O=0V  
MIN  
Max  
8
Unit  
CI/O  
-
-
pF  
pF  
VIN=0V  
CIN  
6
* Capacitance is sampled and not 100% tested.  
Revision 1.0  
December 2001  
- 4 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)  
TEST CONDITIONS*  
Parameter  
Value  
Input Pulse Levels  
0V to 3V  
3ns  
Input Rise and Fall Times  
Input and Output timing Reference Levels  
Output Loads  
1.5V  
See below  
* The above test conditions are also applied at industrial temperature range.  
Output Loads(B)  
Output Loads(A)  
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ  
+3.3V  
RL = 50W  
DOUT  
319W  
VL = 1.5V  
DOUT  
30pF*  
ZO = 50W  
353W  
5pF*  
* Capacitive Load consists of all components of the  
test environment.  
* Including Scope and Jig Capacitance  
READ CYCLE*  
Parameter  
K6R1008V1D-08  
K6R1008V1D-10  
Symbol  
Unit  
Min  
Max  
Min  
10  
-
Max  
Read Cycle Time  
tRC  
tAA  
8
-
-
8
8
4
-
-
10  
10  
5
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Address Access Time  
Chip Select to Output  
tCO  
tOE  
tLZ  
-
-
Output Enable to Valid Output  
Chip Enable to Low-Z Output  
Output Enable to Low-Z Output  
Chip Disable to High-Z Output  
Output Disable to High-Z Output  
Output Hold from Address Change  
Chip Selection to Power Up Time  
Chip Selection to Power DownTime  
-
-
3
0
0
0
3
0
-
3
-
tOLZ  
tHZ  
-
0
-
4
4
-
0
5
tOHZ  
tOH  
tPU  
tPD  
0
5
3
-
-
0
-
8
-
10  
* The above parameters are also guaranteed at industrial temperature range.  
Revision 1.0  
December 2001  
- 5 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
WRITE CYCLE*  
Parameter  
K6R1008V1D-08  
Max  
K6R1008V1D-10  
Symbol  
Unit  
Min  
8
Min  
10  
7
Max  
Write Cycle Time  
tWC  
tCW  
tAS  
-
-
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
5
-
-
-
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Chip Select to End of Write  
Address Set-up Time  
6
0
0
Address Valid to End of Write  
Write Pulse Width(OE High)  
Write Pulse Width(OE Low)  
Write Recovery Time  
tAW  
tWP  
tWP1  
tWR  
tWHZ  
tDW  
tDH  
6
7
6
7
8
10  
0
0
Write to Output High-Z  
0
0
Data to Write Time Overlap  
Data Hold from Write Time  
End of Write to Output Low-Z  
4
5
0
0
tOW  
3
3
* The above parameters are also guaranteed at industrial temperature range.  
TIMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)  
tRC  
Address  
tAA  
tOH  
Valid Data  
Data Out  
Previous Valid Data  
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)  
tRC  
Address  
tAA  
tCO  
tHZ(3,4,5)  
tBHZ(3,4,5)  
tOHZ  
CS  
tBA  
UB, LB  
OE  
tBLZ(4,5)  
tOE  
tOLZ  
tLZ(4,5)  
Data out  
High-Z  
Valid Data  
tPU  
tPD  
ICC  
ISB  
VCC  
50%  
50%  
Current  
Revision 1.0  
December 2001  
- 6 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
NOTES(READ CYCLE)  
1. WE is high for read cycle.  
2. All read cycle timing is referenced from the last valid address to the first transition address.  
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or  
VOL levels.  
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to  
device.  
5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.  
6. Device is continuously selected with CS=VIL.  
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.  
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)  
tWC  
Address  
tWR(5)  
tAW  
OE  
tCW(3)  
CS  
tWP(2)  
tAS(4)  
WE  
tDW  
tDH  
High-Z  
Data in  
Data out  
Valid Data  
tOHZ(6)  
High-Z(8)  
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)  
tWC  
Address  
tWR(5)  
tAW  
tCW(3)  
CS  
tAS(4)  
tWP1(2)  
WE  
tDW  
tDH  
High-Z  
Data in  
Valid Data  
tWHZ(6)  
tOW  
(10)  
(9)  
High-Z(8)  
Data out  
Revision 1.0  
December 2001  
- 7 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
TIMING WAVEFORM OF WRITE CYCLE(3) (CS = Controlled)  
tWC  
Address  
tAW  
tWR(5)  
tCW(3)  
CS  
tAS(4)  
tWP(2)  
WE  
tDH  
tDW  
High-Z  
High-Z  
High-Z  
Data in  
Data out  
Data Valid  
tLZ  
tWHZ(6)  
High-Z(8)  
NOTES(WRITE CYCLE)  
1. All write cycle timing is referenced from the last valid address to the first transition address.  
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;  
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of  
write.  
3. tCW is measured from the later of CS going low to end of write.  
4. tAS is measured from the address valid to the beginning of write.  
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.  
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase  
of the output must not be applied because bus contention can occur.  
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.  
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.  
9. Dout is the read data of the new address.  
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be  
applied.  
FUNCTIONAL DESCRIPTION  
CS  
WE  
X
OE  
X*  
H
Mode  
Not Select  
Output Disable  
Read  
I/O Pin  
High-Z  
High-Z  
DOUT  
Supply Current  
H
ISB, ISB1  
ICC  
L
H
L
H
L
ICC  
L
L
X
Write  
DIN  
ICC  
* X means Don¢t Care.  
Revision 1.0  
December 2001  
- 8 -  
PRELIMINARY  
for AT&T  
K6R1008V1D  
CMOS SRAM  
Units:millimeters/Inches  
PACKAGE DIMENSIONS  
32-SOJ-400  
#32  
#17  
9.40 ±0.25  
0.370 ±0.010  
11.18 ±0.12  
0.440 ±0.005  
+0.10  
-0.05  
0.20  
0.008 +0.004  
#1  
#16  
-0.002  
0.69  
MIN  
21.36  
0.841  
MAX  
0.027  
20.95 ±0.12  
0.825 ±0.005  
1.30  
0.051  
1.30  
0.051  
(
(
)
)
0.10  
0.004  
3.76  
0.148  
MAX  
MAX  
+0.10  
-0.05  
+0.10  
0.71  
0.43  
-0.05  
1.27  
0.050  
0.95  
0.0375  
0.028 +0.004  
(
)
+0.004  
-0.002  
0.017  
-0.002  
32-TSOP2-400CF  
0~8°  
0.25  
0.010  
(
)
#32  
#17  
0.45 ~0.75  
0.018 ~ 0.030  
11.76 ±0.20  
0.463 ±0.008  
0.50  
0.020  
(
)
#1  
#16  
+0.10  
-0.05  
+0.004  
-0.002  
0.15  
21.35  
0.841  
MAX  
0.006  
20.95 ±0.10  
0.825 ±0.004  
1.00 ±0.10  
0.10 MAX  
0.004 MAX  
1.20  
0.047  
MAX  
0.039 ±0.004  
1.27  
0.050  
0.95  
0.037  
0.05  
0.40 ±0.10  
0.016 ±0.004  
(
)
MIN  
0.002  
Revision 1.0  
December 2001  
- 9 -  
This datasheet has been download from:  
www.datasheetcatalog.com  
Datasheets for electronics components.  

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