K4X56163PE-FGC0 [SAMSUNG]

DDR DRAM, 16MX16, 2ns, CMOS, PBGA60,;

K4X56163PE-FGC0


型号：	K4X56163PE-FGC0
厂家：	SAMSUNG SEMICONDUCTOR
描述：	DDR DRAM, 16MX16, 2ns, CMOS, PBGA60, 时钟动态存储器双倍数据速率内存集成电路
文件：	总48页 (文件大小：699K)
下载：	下载PDF数据表文档文件

K4X56163PE-LFG

16M x16 Mobile DDR SDRAM

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30 SAMSUNG

K4X56163PE-LFG

16M x16 Mobile DDR SDRAM

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24 SAMSUNG

K4X56163PE-LG

16M x16 Mobile DDR SDRAM

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19 SAMSUNG

K4X56163PE-LG

16M x16 Mobile DDR SDRAM

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20 SAMSUNG

K4X56163PE-LG000

暂无描述

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0 SAMSUNG

K4X56163PE-LGC0

DDR DRAM, 16MX16, 2ns, CMOS, PBGA60,

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0 SAMSUNG

K4X56163PG

16M x16 Mobile-DDR SDRAM

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69 SAMSUNG

K4X56163PG-FGC30

DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60

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0 SAMSUNG

K4X56163PG-FGCA0

DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, LEAD FREE, FBGA-60

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0 SAMSUNG

K4X56163PG-LGC30

DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60

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0 SAMSUNG

K4X56163PG-LGCA0

DDR DRAM, 16MX16, 6ns, CMOS, PBGA60, FBGA-60

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0 SAMSUNG

K4X56163PI-L(F)E/GC3

16Mx16 Mobile DDR SDRAM

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117 SAMSUNG

K4X56163PI-L(F)E/GC6

16Mx16 Mobile DDR SDRAM

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67 SAMSUNG

K4X56163PI-LFE/GC3

16Mx16 Mobile DDR SDRAM

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8 SAMSUNG

K4X56163PI-LFE/GC6

16Mx16 Mobile DDR SDRAM

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15 SAMSUNG

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