K4S640832K_07 [SAMSUNG]
SDRAM Product Guide; SDRAM产品指南
| 型号： | K4S640832K_07 |
| 厂家： | 
SAMSUNG |
| 描述： | SDRAM Product Guide |
| 文件： | 总8页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
General Information
SDRAM
SDRAM Product Guide
November 2007
Memory Division
November 2007
General Information
SDRAM
A. SDRAM Component Ordering Information
1
2
3
4
5
6
7
8
9
10
11
K 4 S X X X X X X X - X X X X
Speed
Temperature & Power
Package Type
Revision
Interface (VDD, VDDQ)
Bank
SAMSUNG Memory
DRAM
Product
Density & Refresh
Organization
1. SAMSUNG Memory : K
2. DRAM : 4
8. Revision
M : 1st Gen.
J
: 11th Gen.
A : 2nd Gen.
B : 3rd Gen.
C : 4th Gen.
D : 5th Gen.
E : 6th Gen.
K : 12th Gen
N : 14th Gen
3. Product
F
: 7th Gen
S : SDRAM
H : 9th Gen
4. Density & Refresh
16 : 16Mb, 4K/64ms
64 : 64Mb, 4K/64ms
28 : 128Mb, 4K/64ms
56 : 256Mb, 8K/64ms
51 : 512Mb, 8K/64ms
9. Package Type
*1
U : TSOP II (Lead-free)
T
: TSOP II
*1
V : sTSOP II (Lead-free)
N : sTSOP II
*1
(Lead-free & Halogen-free)
: TSOP II
L
Note 1: All of Lead-free or Halogen-free product are in
compliance with RoHS
5. Organization
10. Temperature & Power
04 : x 4
06 : x 4 Stack (Flex frame)
07 : x 8 Stack (Flex frame)
08 : x 8
C : Commercial Temp.( 0°C ~ 70°C) & Normal Power
L : Commercial Temp.( 0°C ~ 70°C) & Low Power
I : Industrial Temp.( -40°C ~ 85°C) & Normal Power
P : Industrial Temp.( -40°C ~ 85°C) & Low Power
16 : x16
32 : x32
6. Bank
11. Speed (Default CL= 3)
2 : 2 Banks
3 : 4 Banks
75 : 7.5ns, PC133 (133MHz CL=3)
60 : 6.0ns (166MHz CL=3)
50 : 5.0ns (200MHz CL=3)
7. Interface ( VDD, VDDQ)
2 : LVTTL (3.3V, 3.3V)
November 2007
General Information
SDRAM
B. SDRAM Component Product Guide
*1
*2
Package & Power
&
Density
Bank
Part Number
Org.
Interface
Refresh
Power (V)
Package
Avail.
*3
Speed
UC75
UL75
K4S640832K
K4S641632K
K4S640832N
K4S641632N
K4S280432I
8M x 8
4M x 16
8M x 8
EOL
64Mb K-die
4Banks
LVTTL
4K/64ms
3.3 ± 0.3V
Lead-free 54pin TSOP(II)
DEC. ’08
UC50/C60/C75
UL50/L60/L75
LC75
LL75
Lead-free & Halogen-
free
4Q’07
CS
64Mb N-die
128Mb I-die
4Banks
LVTTL
LVTTL
4K/64ms
4K/64ms
3.3 ± 0.3V
3.3 ± 0.3V
LC50/C60/C75
LL50/L60/L75
54pin TSOP(II)
4M x 16
32M x 4
16M x 8
8M x 16
32M x 4
16M x 8
8M x 16
64M x 4
32M x 8
16M x 16
64M x 4
32M x 8
16M x 16
128M x 4
64M x 8
32M x 16
UC75
UL75
UC75
UL75
EOL
4Banks K4S280832I
K4S281632I
Lead-free 54pin TSOP(II)
AUG. ’08
UC60/C75
UL60/L75
*4
U
C75
K4S280432K
UL75
Lead-free & Halogen-
free
UC75
UL75
4Banks
LVTTL
LVTTL
LVTTL
LVTTL
4K/64ms
8K/64ms
8K/64ms
8K/64ms
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
Now
128Mb K-die
256Mb H-die
K4S280832K
K4S281632K
K4S560432H
*4
54pin TSOP(II)
UC60/C75
UL60/L75
UC75
UL75
UC75
UL75
EOL
4Banks K4S560832H
K4S561632H
Lead-free 54pin TSOP(II)
SEP. ’08
UC60/C75
UL60/L75
*4
U
C75
K4S560432J
UL75
Lead-free & Halogen-
free
UC75
UL75
4Banks
Now
Now
256Mb J-die
K4S560832J
K4S561632J
K4S510432D
*4
54pin TSOP(II)
UC60/C75
UL60/L75
UC75
UL75
UC75
UL75
512Mb D-die
Note 1 :
4Banks K4S510832D
K4S511632D
Lead-free 54pin TSOP(II)
UC75
UL75
Note 3 :
U : TSOP(II) (Lead-free)
L : TSOP(II) (Lead-free & Halogen-free)
Speed
Description
75
60
50
7.5ns, PC133 (133Mhz @ CL=3)
6.0 ns (166Mhz @ CL=3)
5.0 ns (200Mhz @ CL=3)
Note 2 :
Temperature and Power Description
C
Temperature, Normal Power
* All products have backward compatibility with PC100.
L
Temperature, Low Power
- Commercial Temp (0°C < Ta < 70°C)
Note 4 : 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
November 2007
General Information
SDRAM
C. Industrial Temperature SDRAM Component Product Guide
*1
*2
Package & Power
Density
Bank
Part Number
Org.
Interface
Refresh
Power (V)
Package
Avail.
*3
& Speed
64Mb
K-die
4Banks
UI60/I75
EOL
KS641632K
4M x 16
4M x 16
8M x 16
8M x 16
16M x 16
16M x 16
LVTTL
LVTTL
LVTTL
LVTTL
LVTTL
LVTTL
4K/64ms
4K/64ms
4K/64ms
4K/64ms
8K/64ms
8K/64ms
Lead-free 54pin TSOP(II)
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
3.3 ± 0.3V
UP60/P75
DEC.’08
64Mb
N-die
LI60/I75
Lead-free & Halogen-free
54pin TSOP(II)
4Banks KS641632N
4Banks K4S281632I
4Banks K4S281632K
4Banks K4S561632H
4Banks K4S561632J
1Q’08
LP60/P75
128Mb
I-die
UI60/I75
EOL
Lead-free 54pin TSOP(II)
Lead-free & Halogen-free
UP60/P75
AUG.’08
*4
128Mb
K-die
U
I60/I75
Now
*4
UP60/P75
54pin TSOP(II)
256Mb
H-die
UI60/I75
EOL
Lead-free 54pin TSOP(II)
UP60/P75
SEP.’08
*4
256Mb
J-die
Lead-free & Halogen-free
U
I60/I75
Now
*4
UP60/P75
54pin TSOP(II)
Note 1 :
Note 3 :
U : TSOP(II) (Lead-free)
L : TSOP(II) (Lead-free & Halogen-free)
Speed
75
Description
7.5ns, PC133 (133Mhz @ CL=3)
6.0 ns (166Mhz @ CL=3)
5.0 ns (200Mhz @ CL=3)
Note 2 :
60
Temperature and Power Description
50
I
Industrial Temperature, Normal Power
Industrial Temperature, Low Power
P
- Industrial Temp (-40°C < Ta < 85°C)
Note 4 : 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
November 2007
General Information
SDRAM
D. SDRAM Module Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
M X X X S X X X X X X X - X X X
Memory Module
DIMM Configuration
Speed
Power
Data bits
PCB revision & Type
Feature
Depth
Package
Component Revision
Refresh, # of Banks in Comp. & Interface
Composition Component
1. Memory Module : M
7. Composition Component
0
3
4
8
9
: x 4
: x 8
: x16
2. DIMM Configuration
: x 4 Stack (Flexframe)
: x 8 Stack (Flexframe)
3 : DIMM
4 : SODIMM
3. Data Bits
8. Component Revision
63 : x63 PC100 / PC133 µSODIMM
:
:
:
:
:
:
:
:
:
M
B
D
F
J
1st Gen.
3rd Gen.
5th Gen.
7th Gen.
11h Gen.
A
C
E
H
2nd Gen.
4th Gen.
6th Gen.
9h Gen.
with SPD for 144pin
64 : x64 PC100 / PC133 SODIMM
with SPD for 144pin (Intel/JEDEC)
66 : x64 Unbuffered DIMM
with SPD for 144pin/168pin (Intel/JEDEC)
74 : x72 /ECC Unbuffered DIMM
with SPD for 168pin (Intel/JEDEC)
77 : x72 /ECC PLL + Register DIMM
with SPD for 168pin (Intel PC100)
90 : x72 /ECC PLL + Register DIMM
with SPD for 168pin (JEDEC PC133)
9. Package
T
: TSOP(II)
(400mil)
(400mil)
N
U
V
: sTSOP(II)
: TSOP(II) Lead-free (400mil)
: sTSOP(II) Lead-free (400mil)
4. Feature
S : SDRAM
10. PCB Revision & Type
5. Depth
:
:
:
0
2
U
Mother PCB
2nd Rev.
Low Profile DIMM S : 4Layer PCB.
1 : 1st Rev.
3 : 3rd Rev.
09 : 8M (for 128Mb/512Mb)
16 : 16M
32 : 32M
64 : 64M
28 : 128M
56 : 256M
17 : 16M (for 128Mb/512Mb)
33 : 32M (for 128Mb/512Mb)
65 : 64M (for 128Mb/512Mb)
29 : 128M (for 128Mb/512Mb)
59 : 256M (for 128Mb/512Mb)
11. Power
C : Commercial Normal
: Commercial Low
( 0°C ~ 70°C)
( 0°C ~ 70°C)
L
6. Refresh, # of Banks in comp. & Interface
2
5
:
4K/ 64ms Ref., 4Banks & LVTTL
8K/ 64ms Ref., 4Banks & LVTTL
12. Speed (Default CL= 3 )
7A : PC133 (133MHz CL=3/PC100 CL2)
:
November 2007
General Information
SDRAM
E. SDRAM Module Product Guide
Comp.
Power Internal External
Org.
Density
Part No.
Speed
Composition
Feature
Avail.
Version
(V)
Banks
Banks
168pin PC133 Registered DIMM
32Mx72
64Mx72
256MB M390S3253HU1
C7A
C7A
C7A
32M x 8 * 9 pcs
64M x 4 * 18 pcs
64M x 4 * 18 pcs
256Mb
256Mb
256Mb
H-die
H-die
H-die
1
1
1
DS, 1500mil
DS, 1700mil
DS, 1200mil
EOL
M390S6450HU1
512MB
3.3 V
4
JUN.’08
M390S6450HUU
168pin PC133 Unbuffered DIMM
8Mx64
64MB M366S0924IUS
M366S1723IUS
C7A
C7A
8M x 16 * 4 pcs
16M x 8 * 8 pcs
128Mb
128Mb
I-die
I-die
1
1
SS, 1000mil
SS, 1375mil
EOL
JUN.’08
EOL
16Mx64
M366S1654HUS
128MB
C7A
16M x 16 * 4 pcs
256Mb
H-die
1
SS, 1000mil
JUN.’08
M366S1654JUS
C7A
C7A
C7A
C7A
C7A
16M x 16 * 4 pcs
16M x 8 * 9 pcs
16M x 8 * 16 pcs
16M x 8 * 18 pcs
32M x 8 * 8 pcs
256Mb
128Mb
128Mb
128Mb
256Mb
J-die
I-die
I-die
I-die
J-die
1
1
2
2
1
SS, 1000mil
SS, 1375mil
DS, 1375mil
DS, 1375mil
SS, 1375mil
Now
16Mx72
32Mx64
32Mx72
32Mx64
M374S1723IUS
3.3V
4
EOL
M366S3323IUS
JUN.’08
256MB M374S3323IUS
M366S3253JUS
Now
EOL
M366S6453HUS
512MB
C7A
C7A
32M x 8 * 16 pcs
256Mb
H-die
J-die
2
2
DS, 1375mil
DS, 1375mil
JUN.’08
64Mx64
M366S6453JUS
32M x 8 * 16 pcs
256Mb
Now
144pin PC133 SODIMM
EOL
M464S1724IUS
128MB
L7A
L7A
L7A
L7A
L7A
L7A
8M x 16 * 8 pcs
8M x 16 * 8 pcs
16M x 16 * 8 pcs
16M x 16 * 8 pcs
32M x 8 * 16 pcs
32M x 8 * 16 pcs
128Mb
I-die
1
1
1
1
2
2
DS, 1250mil
DS, 1250mil
DS, 1250mil
DS, 1250mil
DS, 1250mil
DS, 1250mil
JUN.’08
16Mx64
32Mx64
64Mx64
M464S1724KUS
128Mb
256Mb
256Mb
256Mb
256Mb
K-die
H-die
J-die
H-die
J-die
Now
EOL
M464S3254HUS
256MB
JUN.’08
3.3V
4
M464S3254JUS
Now
EOL
M464S6453HV0
512MB
JUN.’08
M464S6453JV0
Now
November 2007
General Information
SDRAM
F. Package Dimension
Unit : mm
#54
#28
#1
#27
(1.50)
+0.075
- 0.035
0.125
22.22 ± 0.10
(10°)
0.10 MAX
[
(10°)
0.80TYP
[0.80 ± 0.08]
0.075 MAX
[
+0.10
0.35
- 0.05
(0.71)
0.25TYP
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS’Y OUT QUALITY
(0° ∼ 8°)
54Pin TSOP(II) Package Dimension
November 2007
General Information
SDRAM
For further information,
semiconductor@samsung.com
November 2007
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K4S640832N-LL750
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