K4S561632E-TC75T00 [SAMSUNG]

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54;
K4S561632E-TC75T00
型号: K4S561632E-TC75T00
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54

时钟 动态存储器 光电二极管 内存集成电路
文件: 总14页 (文件大小:196K)
下载:  下载PDF数据表文档文件

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256Mb E-die SDRAM Specification

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60 SAMSUNG

K4S561632E-TL60

256Mb E-die SDRAM Specification

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62 SAMSUNG

K4S561632E-TL60

256Mb E-die SDRAM Specification

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7 SAMSUNG

K4S561632E-TL60

256Mb E-die SDRAM Specification

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12 SAMSUNG

K4S561632E-TL60

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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0 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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7 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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35 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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47 SAMSUNG

K4S561632E-TL75

256Mb E-die SDRAM Specification

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101 SAMSUNG

K4S561632E-TL75

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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0 SAMSUNG

K4S561632E-UC60

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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110 SAMSUNG

K4S561632E-UC600

Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S561632E-UC75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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606 SAMSUNG

K4S561632E-UC750

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S561632E-UC75T

暂无描述

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0 SAMSUNG