K4S560832E-TL75 [SAMSUNG]

256Mb E-die SDRAM Specification; 256Mb的电子芯片SDRAM规格
K4S560832E-TL75
型号: K4S560832E-TL75
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

256Mb E-die SDRAM Specification
256Mb的电子芯片SDRAM规格

存储 内存集成电路 光电二极管 电子 动态存储器 时钟
文件: 总14页 (文件大小:198K)
下载:  下载PDF数据表文档文件

K4S560832E-TL750

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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0 SAMSUNG

K4S560832E-UC75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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53 SAMSUNG

K4S560832E-UC750

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54

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0 SAMSUNG

K4S560832E-UL75

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

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13 SAMSUNG

K4S560832H

SDRAM Product Guide

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24 SAMSUNG

K4S560832H-UC75

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54

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0 SAMSUNG

K4S560832J

SDRAM Product Guide

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4 SAMSUNG

K4S560832J

256Mb J-die SDRAM Specification

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9 SAMSUNG

K4S560832J

Consumer Memory

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33 SAMSUNG

K4S560832J-UC/L75

256Mb J-die SDRAM Specification

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19 SAMSUNG

K4S560832J-UC75

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54,

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0 SAMSUNG

K4S560832N

Consumer Memory

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5 SAMSUNG

K4S560832N

256Mb N-die SDRAM

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30 SAMSUNG

K4S560832N-LC75

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54

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0 SAMSUNG

K4S560832N-LC75

Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-54

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2 SAMSUNG