K4S161622E-TE60 [SAMSUNG]

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50;
K4S161622E-TE60
型号: K4S161622E-TE60
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

时钟 动态存储器 光电二极管 内存集成电路
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K4S161622E-TE70

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622E-TI10

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622E-TI55

Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622E-TI60

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622E-TI70

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622E-TI80

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 X 0.825 INCH, TSOP2-50

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0 SAMSUNG

K4S161622H

16Mb H-die SDRAM Specification

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41 SAMSUNG

K4S161622H

16Mb H-die SDRAM Specification

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260 SAMSUNG

K4S161622H-TC100

Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, TSOP2-50

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-
0 SAMSUNG

K4S161622H-TC55

16Mb H-die SDRAM Specification

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28 SAMSUNG

K4S161622H-TC55

16Mb H-die SDRAM Specification

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34 SAMSUNG

K4S161622H-TC550

Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

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0 SAMSUNG

K4S161622H-TC60

16Mb H-die SDRAM Specification

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96 SAMSUNG

K4S161622H-TC60

16Mb H-die SDRAM Specification

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324 SAMSUNG

K4S161622H-TC600

Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, 0.400 X 0.825 INCH, 0.80 MM PITCH, TSOP2-50

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0 SAMSUNG