K4E661612D-TI60T [SAMSUNG]
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50;
| 型号： | K4E661612D-TI60T |
| 厂家： | 
SAMSUNG |
| 描述： | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 动态存储器 光电二极管 内存集成电路 |
| 文件： | 总36页 (文件大小：397K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
4M x 16bit CMOS Dynamic RAM with Extended Data Out
DESCRI PT I O N
T h i s i s
a f a m i l y o f 4 , 1 9 4 , 3 0 4 x 1 6 b i t E x t e n d e d D a t a O u t M o d e C M O S D R A M s . E x t e n d e d D a t a O u t M o d e o f f e r s h i g h s p e e d r a n d o m
a c c e s s o f m e m o r y c e l l s w i t h i n t h e s a m e r o w . R e f r e s h c y c l e ( 4 K R e f . o r 8 K R e f . ) , a c c e s s t i m e ( - 4 5 , - 5 0 o r - 6 0 ) , p o w e r c o n s u m p t i o n ( N o r -
m a l o r L o w p o w e r ) a r e o p t i o n a l f e a t u r e s o f t h i s f a m i l y . A l l o f t h i s f a m i l y h a v e C A S - b e f o r e - R A S r e f r e s h , R A S - o n l y r e f r e s h a n d H i d d e n
r e f r e s h c a p a b i l i t i e s . F u r t h e r m o r e , S e l f - r e f r e s h o p e r a t i o n i s a v a i l a b l e i n L - v e r s i o n . T h i s 4 M x 1 6 E D O M o d e D R A M f a m i l y i s f a b r i c a t e d
u s i n g S a m s u n g ¢s a d v a n c e d C M O S p r o c e s s t o r e a l i z e h i g h b a n d - w i d t h , l o w p o w e r c o n s u m p t i o n a n d h i g h r e l i a b i l i t y .
F E A T U R E S
•
•
•
•
•
•
•
•
•
•
•
•
E x t e n d e d D a t a O u t M o d e o p e r a t i o n
C A S B y t e / W o r d R e a d / W r i t e o p e r a t i o n
•
Part Identification
2
-
-
K 4 E 6 6 1 6 1 2 D - T I / P ( 3 . 3 V , 8 K R e f . )
K 4 E 6 4 1 6 1 2 D - T I / P ( 3 . 3 V , 4 K R e f . )
C A S - b e f o r e - R A S r e f r e s h c a p a b i l i t y
R A S - o n l y a n d H i d d e n r e f r e s h c a p a b i l i t y
F a s t p a r a l l e l t e s t m o d e c a p a b i l i t y
S e l f - r e f r e s h c a p a b i l i t y ( L - v e r o n l y )
L V T T L ( 3 . 3 V ) c o m p a t i b l e i n p u t s a n d o u t p u t s
E a r l y W r i t e o r o u t p u t e n a b l e c o n t r o l l e d w r i t e
J E D E C S t a n d a r d p i n o u t
•
Active Power Dissipation
U n i t : m W
4 K
S p e e d
- 4 5
8 K
A v a i l a b l e i n P l a s t i c T S O P ( I I ) p a c k a g e s
+ 3 . 3 V ±0 . 3 V p o w e r s u p p l y
3 2 4
2 8 8
2 5 2
4 6 8
- 5 0
4 3 2
I n d u s t r i a l T e m p e r a t u r e o p e r a t i n g ( - 4 0 ~ 8 5°C
)
- 6 0
3 9 6
•
Refresh Cycles
F U N C T I O N A L B L O C K D I A G R A M
P a r t
N O .
R e f r e s h
cycle
R e f r e s h t i m e
N o r m a l
6 4 m s
L - v e r
R A S
UCAS
LCAS
W
K 4 E 6 6 1 6 1 2 D *
K 4 E 6 4 1 6 1 2 D
8 K
4 K
Vcc
1 2 8 m s
Control
Vss
Clocks
VBB Generator
*
A c c e s s m o d e & R A S o n l y r e f r e s h m o d e
8 K c y c l e / 6 4 m s ( N o r m a l ) , 8 K c y c l e / 1 2 8 m s ( L - v e r . )
C A S - b e f o r e -R A S H i d d e n r e f r e s h m o d e
4 K c y c l e / 6 4 m s ( N o r m a l ) , 4 K c y c l e / 1 2 8 m s ( L - v e r . )
Lower
Data in
Buffer
:
D Q 0
to
Row Decoder
Refresh Timer
Refresh Control
&
D Q 7
Lower
Data out
Buffer
:
Memory Array
4,194,304 x 16
Cells
O E
Refresh Counter
Row Address Buffer
Col. Address Buffer
Upper
Data in
Buffer
•
Performance Range
D Q8
to
S p e e d
- 4 5
tRAC
4 5 n s
5 0 n s
6 0 n s
tCAC
1 2 n s
1 3 n s
1 5 n s
tRC
tHPC
1 7 n s
2 0 n s
2 5 n s
A0~A12
(A0~A11)*1
Upper
Data out
Buffer
D Q 1 5
7 4 n s
8 4 n s
1 0 4 n s
A0~A8
Column Decoder
(A0~A9)*1
- 5 0
- 6 0
Note) *1
: 4K Refresh
S A M S U N G E L E C T R O N I C S C O . , L T D . reserves the right to
c h a n g e p r o d u c t s a n d s p e c i f i c a t i o n s w i t h o u t n o t i c e .
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
PIN CONFIGURATION (Top Views)
• K4E661612D-T
• K4E641612D-T
1
2
3
4
5
6
7
8
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
V CC
DQ0
DQ1
DQ2
DQ3
VCC
DQ4
DQ5
DQ6
DQ7
N.C
VCC
W
RAS
N.C
N.C
N.C
N.C
A0
VSS
DQ15
DQ14
DQ13
DQ12
VSS
DQ11
DQ10
DQ9
DQ8
N.C
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
VSS
LCAS
UCAS
OE
N.C
N.C
A12(N.C)*
A11
A10
A9
A8
A1
A2
A3
A4
A5
VCC
A7
A6
VSS
(400mil TSOP(II))
*(N.C) : N.C for 4K Refresh Product
Pin Name
Pin function
A0 - A12
A0 - A11
DQ0 - 15
VSS
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
RAS
Row Address Strobe
Upper Column Address Strobe
Lower Column Address Strobe
Read/Write Input
UCAS
LCAS
W
OE
Data Output Enable
Power(+3.3V)
VCC
N.C
No Connection
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to VSS
Voltage on VCC supply relative to VSS
Storage Temperature
Symbol
VIN, VOUT
VCC
Rating
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
1
Units
V
V
Tstg
°C
Power Dissipation
PD
W
Short Circuit Output Current
IOS Address
50
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= -40 to 85°C)
Parameter
Supply Voltage
Symbol
VCC
VSS
Min
3.0
0
Typ
Max
3.6
0
Units
3.3
V
V
V
V
Ground
0
-
*1
Input High Voltage
Input Low Voltage
VIH
2.0
Vcc+0.3
0.8
*2
VIL
-
-0.3
*1 : Vcc+1.3V at pulse width£15ns which is measured at VCC
*2 : -1.3 at pulse width£15ns which is measured at V SS
DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)
Parameter
Symbol
Min
Max
Units
Input Leakage Current (Any input 0£VIN£VCC+0.3V,
all other pins not under test=0 Volt)
II(L)
-5
5
uA
Output Leakage Current
(Data out is disabled, 0V£VOUT£VCC)
IO(L)
-5
5
uA
Output High Voltage Level(IOH=-2mA)
Output Low Voltage Level(IOL =2mA)
VOH
VOL
2.4
-
-
V
V
0.4
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
D C A N D O P E R A T I N G C H A R A C T E R I S T I C S ( C o n t i n u e d )
Max
S y m b o l
P o w e r
Speed
Units
K 4 E 6 6 1 6 1 2 D
K 4 E 6 4 1 6 1 2 D
- 4 5
- 5 0
- 6 0
9 0
8 0
7 0
1 3 0
1 2 0
1 1 0
m A
m A
m A
IC C 1
IC C 2
IC C 3
D o n ¢t c a r e
N o r m a l
L
1
1
1
1
m A
m A
D o n ¢t c a r e
- 4 5
- 5 0
- 6 0
9 0
8 0
7 0
1 3 0
1 2 0
1 1 0
m A
m A
m A
D o n ¢t c a r e
D o n ¢t c a r e
- 4 5
- 5 0
- 6 0
1 0 0
9 0
1 0 0
9 0
m A
m A
m A
IC C 4
IC C 5
IC C 6
8 0
8 0
N o r m a l
L
0. 5
0. 5
m A
u A
D o n ¢t c a r e
2 0 0
2 0 0
- 4 5
- 5 0
- 6 0
1 3 0
1 2 0
1 1 0
1 3 0
1 2 0
1 1 0
m A
m A
m A
D o n ¢t c a r e
IC C 7
IC C S
L
L
D o n ¢t c a r e
D o n ¢t c a r e
3 5 0
3 5 0
3 5 0
3 5 0
u A
u A
IC C 1*
IC C 2
:
O p e r a t i n g C u r r e n t ( R A S a n d U C A S , L C A S , A d d r e s s c y c l i n g @ tR C= m i n . )
S t a n d b y C u r r e n t ( R A S = U C A S = L C A S =W = V IH )
:
IC C 3* : R A S - o n l y R e f r e s h C u r r e n t ( U C A S = L C A S= V IH , R A S , A d d r e s s c y c l i n g @ tRC = m i n . )
IC C 4*
IC C 5
:
E x t e n d e d D a t a O u t M o d e C u r r e n t ( R A S = V IL , U C A S o r L C A S , A d d r e s s c y c l i n g @ tHPC = m i n . )
S t a n d b y C u r r e n t ( R A S = U C A S = L C A S =W = V CC - 0 . 2 V )
:
IC C 6* : C A S - B e f o r e - R A S R e f r e s h C u r r e n t (R A S a n d U C A S o r L C A S c y c l i n g @ tR C= m i n )
IC C 7 B a t t e r y b a c k - u p c u r r e n t , A v e r a g e p o w e r s u p p l y c u r r e n t , B a t t e r y b a c k - u p m o d e
:
I n p u t h i g h v o l t a g e ( V IH ) = VC C- 0 . 2 V , I n p u t l o w v o l t a g e ( V IL ) = 0 . 2 V , U C A S , L C A S = C A S - b e f o r e - R A S c y c l i n g o r 0 . 2 V
W , O E = V IH , A d d r e s s = D o n ¢t c a r e , D Q = O p e n , T RC= 3 1 . 2 5 u s
: S e l f R e f r e s h C u r r e n t
IC C S
R A S = U C A S =L C A S = 0 . 2 V , W = O E = A 0
~ A 1 2 ( A 1 1 ) = V C C- 0 . 2 V o r 0 . 2 V , D Q 0 ~ D Q 1 5 = V CC- 0 . 2 V , 0 . 2 V o r O p e n
*Note :
ICC1 , IC C 3 , IC C 4 a n d I CC6 a r e d e p e n d e n t o n o u t p u t l o a d i n g a n d c y c l e r a t e s . S p e c i f i e d v a l u e s a r e o b t a i n e d w i t h t h e o u t p u t o p e n .
ICC i s s p e c i f i e d a s a n a v e r a g e c u r r e n t . I n I C C 1 , IC C 3 a n d I CC6, a d d r e s s c a n b e c h a n g e d m a x i m u m o n c e w h i l e R A S = V IL. In I C C 4 ,
a d d r e s s c a n b e c h a n g e d m a x i m u m o n c e w i t h i n o n e E D O m o d e c y c l e t i m e , tHPC.
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
C A P A C I T A N C E (T A = 2 5 °C , V CC = 3 . 3 V , f = 1 M H z )
Parameter
S y m b o l
C I N 1
M i n
M a x
Units
pF
I n p u t c a p a c i t a n c e [ A 0
I n p u t c a p a c i t a n c e [R A S , U C A S , L C A S , W , O E ]
O u t p u t c a p a c i t a n c e [ D Q 0 D Q 1 5 ]
~
A 1 2 ]
-
-
-
5
7
7
C I N 2
pF
-
C DQ
pF
A C C H A R A C T E R I S T I C S (-40°C £ T A £ 8 5 °C , S e e n o t e 2 )
T e s t c o n d i t i o n
: V CC = 3 . 3 V ±0 . 3 V , V i h / V i l = 2 . 2 / 0 . 7 V , V o h / V o l = 2 . 0 / 0 . 8 V
-45
-50
-60
Unit
Note
s
Parameter
S y m b o l
Min
7 4
Max
M i n
Max
Min
1 0 4
1 3 8
Max
R a n d o m r e a d o r w r i t e c y c l e t i m e
R e a d - m o d i f y - w r i t e c y c l e t i m e
A c c e s s t i m e f r o m R A S
8 4
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
tR C
1 0 1
1 1 3
tR W C
tR A C
tC A C
tA A
4 5
1 2
2 3
5 0
1 3
2 5
6 0
1 5
3 0
3 , 4 , 1 0
3, 4, 5
3 , 1 0
3
A c c e s s t i m e f r o m C A S
A c c e s s t i m e f r o m c o l u m n a d d r e s s
C A S t o o u t p u t i n L o w - Z
3
3
3
3
3
3
tC L Z
tC E Z
tOLZ
tT
O u t p u t b u f f e r t u r n - o f f d e l a y f r o m C A S
O E t o o u t p u t i n L o w - Z
1 3
5 0
1 3
5 0
1 3
5 0
6 , 2 0
3
3
3
3
T r a n s i t i o n t i m e ( r i s e a n d f a l l )
R A S p r e c h a r g e t i m e
1
1
1
2
tR P
2 5
4 5
8
3 0
5 0
8
4 0
6 0
1 0
4 0
1 0
1 4
1 2
5
R A S p u l s e w i d t h
1 0 K
1 0 K
1 0 K
tR A S
tR S H
tC S H
tC A S
tR C D
tR A D
tC R P
tA S R
tR A H
tA S C
tC A H
tR A L
tR C S
tR C H
tR R H
tW C H
tW P
R A S h o l d t i m e
C A S h o l d t i m e
3 5
7
3 8
8
C A S p u l s e w i d t h
5 K
3 3
2 2
1 0 K
3 7
1 0 K
4 5
R A S to C A S d e l a y t i m e
1 1
9
1 1
9
4
R A S t o c o l u m n a d d r e s s d e l a y t i m e
C A S to R A S p r e c h a r g e t i m e
R o w a d d r e s s s e t - u p t i m e
R o w a d d r e s s h o l d t i m e
2 5
3 0
1 0
5
5
0
0
0
7
7
1 0
0
C o l u m n a d d r e s s s e t - u p t i m e
C o l u m n a d d r e s s h o l d t i m e
C o l u m n a d d r e s s t o R A S l e a d t i m e
R e a d c o m m a n d s e t - u p t i m e
R e a d c o m m a n d h o l d t i m e r e f e r e n c e d t o C A S
R e a d c o m m a n d h o l d t i m e r e f e r e n c e d t o R A S
W r i t e c o m m a n d h o l d t i m e
W r i t e c o m m a n d p u l s e w i d t h
W r i t e c o m m a n d t o R A S l e a d t i m e
W r i t e c o m m a n d t o C A S l e a d t i m e
D a t a s e t - u p t i m e
0
0
1 3
1 3
7
7
1 0
3 0
0
2 3
0
2 5
0
0
0
0
8
8
0
0
0
7
7
1 0
1 0
1 0
1 0
0
6
7
8
8
tR W L
tC W L
tD S
7
7
1 6
0
0
9 , 1 9
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
A C C H A R A C T E R I S T I C S ( C o n t i n u e d )
-45
-50
-60
Parameter
S y m b o l
Units
Note
Min
Max
Min
M a x
Min
Max
D a t a h o l d t i m e
7
7
1 0
n s
m s
m s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
u s
n s
n s
9 , 1 9
tD H
R e f r e s h p e r i o d ( N o r m a l )
6 4
6 4
6 4
tR E F
tR E F
tW C S
tC W D
tR W D
tA W D
tC S R
tC H R
tR P C
tC P A
tH P C
tH P R W C
tC P
R e f r e s h p e r i o d ( L - v e r )
1 2 8
1 2 8
1 2 8
W r i t e c o m m a n d s e t - u p t i m e
C A S to W d e l a y t i m e
0
0
0
7
7 , 1 5
7
2 4
5 7
3 5
5
2 7
6 4
3 9
5
3 2
7 7
4 7
5
R A S to W d e l a y t i m e
C o l u m n a d d r e s s t o W d e l a y t i m e
C A S s e t - u p t i m e ( C A S - b e f o r e - R A S r e f r e s h )
C A S h o l d t i m e ( C A S - b e f o r e - R A S r e f r e s h )
R A S to C A S p r e c h a r g e t i m e
A c c e s s t i m e f r o m C A S p r e c h a r g e
H y p e r P a g e c y c l e t i m e
7
1 7
1 8
1 0
5
1 0
5
1 0
5
2 4
2 8
3 5
3
1 7
4 7
6.5
4 5
2 4
2 0
4 7
7
2 5
5 6
1 0
6 0
3 5
2 1
2 1
1 4
H y p e r P a g e r e a d - m o d i f y - w r i t e c y c l e t i m e
C A S p r e c h a r g e t i m e ( H y p e r p a g e c y c l e )
R A S p u l s e w i d t h ( H y p e r p a g e c y c l e )
R A S h o l d t i m e f r o m C A S p r e c h a r g e
O E a c c e s s t i m e
2 0 0 K
1 2
5 0
3 0
2 0 0 K
2 0 0 K
1 5
tR A S P
tR H C P
tO E A
tO E D
tC P W D
tO E Z
tO E H
tWTS
tW T H
tW R P
tW R H
tD O H
tR E Z
tW E Z
tW E D
tO C H
tCHO
tO E P
tW P E
tR A S S
tR P S
tC H S
1 3
3
6
O E t o d a t a d e l a y
8
3 6
3
1 0
4 1
3
1 3
5 2
3
C A S p r e c h a r g e t o W d e l a y t i m e
O u t p u t b u f f e r t u r n o f f d e l a y t i m e f r o m O E
O E c o m m a n d h o l d t i m e
1 1
1 3
1 3
5
5
5
W r i t e c o m m a n d s e t - u p t i m e ( T e s t m o d e i n )
W r i t e c o m m a n d h o l d t i m e ( T e s t m o d e i n )
1 0
1 0
1 0
1 0
4
1 0
1 0
1 0
1 0
5
1 0
1 0
1 0
1 0
5
1 1
1 1
W
W
to R A S p r e c h a r g e t i m e ( C - B - R r e f r e s h )
to R A S h o l d t i m e ( C - B - R r e f r e s h )
O u t p u t d a t a h o l d t i m e
O u t p u t b u f f e r t u r n o f f d e l a y f r o m R A S
O u t p u t b u f f e r t u r n o f f d e l a y f r o m W
3
1 3
1 3
3
1 3
1 3
3
1 3
1 3
6 , 2 0
6
3
3
3
W
t o d a t a d e l a y
8
1 5
5
1 5
5
O E to C A S h o l d t i m e
C A S h o l d t i m e t o O E
O E p r e c h a r g e t i m e
5
5
5
5
5
5
5
W
p u l s e w i d t h ( H y p e r P a g e C y c l e )
5
5
5
R A S p u l s e w i d t h ( C - B - R s e l f r e f r e s h )
R A S p r e c h a r g e t i m e ( C - B - R s e l f r e f r e s h )
C A S h o l d t i m e ( C - B - R s e l f r e f r e s h )
1 0 0
7 4
- 5 0
1 0 0
9 0
- 5 0
1 0 0
1 1 0
- 5 0
2 2 , 2 3 , 2 4
2 2 , 2 3 , 2 4
2 2 , 2 3 , 2 4
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
( Note 11 )
T E S T M O D E C Y C L E
-45
-50
- 6 0
Parameter
Symbol
Units
Note
Min
7 9
M a x
Min
8 9
Max
Min
1 0 9
1 4 5
Max
R a n d o m r e a d o r w r i t e c y c l e t i m e
R e a d - m o d i f y - w r i t e c y c l e t i m e
A c c e s s t i m e f r o m R A S
A c c e s s t i m e f r o m C A S
A c c e s s t i m e f r o m c o l u m n a d d r e s s
R A S p u l s e w i d t h
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
n s
tRC
tR W C
tRAC
tCAC
tA A
1 1 0
1 2 1
5 0
1 7
5 5
1 8
6 5
2 0
3 , 4 , 1 0 , 1 2
3 , 4 , 5 , 1 2
3 , 1 0 , 1 2
2 8
3 0
3 5
5 0
1 2
1 8
3 9
2 8
2 9
6 2
4 0
2 2
5 2
5 0
1 0 K
1 0 K
5 5
1 3
1 8
4 3
3 0
3 5
7 2
4 7
2 5
5 3
5 5
1 0 K
1 0 K
6 5
1 5
2 0
5 0
3 5
3 9
8 4
5 4
3 0
6 1
6 5
1 0 K
1 0 K
tR A S
tC A S
tRSH
tCSH
tRAL
C A S p u l s e w i d t h
R A S h o l d t i m e
C A S h o l d t i m e
C o l u m n A d d r e s s t o R A S l e a d t i m e
C A S to W d e l a y t i m e
R A S to W d e l a y t i m e
7
7
tC W D
tR W D
tA W D
tHPC
tH P R W C
tR A S P
tC P A
tO E A
tO E D
tO E H
C o l u m n A d d r e s s t o
W
d e l a y t i m e
7
H y p e r P a g e c y c l e t i m e
2 1
2 1
H y p e r P a g e r e a d - m o d i f y - w r i t e c y c l e t i m e
R A S p u l s e w i d t h ( H y p e r p a g e c y c l e )
A c c e s s t i m e f r o m C A S p r e c h a r g e
O E a c c e s s t i m e
2 0 0 K
2 9
2 0 0 K
3 3
2 0 0 K
4 0
3
3
1 7
1 8
2 0
O E t o d a t a d e l a y
1 3
1 3
1 8
1 8
2 0
2 0
O E c o m m a n d h o l d t i m e
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
N O T E S
A n i n i t i a l p a u s e o f 2 0 0 u s i s r e q u i r e d a f t e r p o w e r - u p f o l l o w e d b y a n y 8 R A S - o n l y o r C A S - b e f o r e -R A S r e f r e s h c y c l e s b e f o r e
p r o p e r d e v i c e o p e r a t i o n i s a c h i e v e d .
1 .
2 .
3 .
I n p u t v o l t a g e l e v e l s a r e V i h / V i l . V IH ( m i n ) a n d V IL( m a x ) a r e r e f e r e n c e l e v e l s f o r m e a s u r i n g t i m i n g o f i n p u t s i g n a l s . T r a n s i t i o n
t i m e s a r e m e a s u r e d b e t w e e n V IH( m i n ) a n d V IL ( m a x ) a n d a r e a s s u m e d t o b e 2 n s f o r a l l i n p u t s .
M e a s u r e d w i t h
a l o a d e q u i v a l e n t t o 1 T T L l o a d a n d 1 0 0 p F .
4 . O p e r a t i o n w i t h i n t h e tR C D ( m a x ) l i m i t i n s u r e s t h a t tRAC ( m a x ) c a n b e m e t . tRCD ( m a x ) i s s p e c i f i e d a s
a r e f e r e n c e p o i n t o n l y .
If tR C D i s g r e a t e r t h a n t h e s p e c i f i e d tR C D ( m a x ) l i m i t , t h e n a c c e s s t i m e i s c o n t r o l l e d e x c l u s i v e l y b y tCAC .
A s s u m e s t h a t tR C D³ tR C D( m a x ) .
5 .
6 . T h i s p a r a m e t e r d e f i n e s t h e t i m e a t w h i c h t h e o u t p u t a c h i e v e s t h e o p e n c i r c u i t c o n d i t i o n a n d i s n o t r e f e r e n c e d t o V oh or V o l.
tW C S, tRWD , tC W D a n d tA W D a r e n o n r e s t r i c t i v e o p e r a t i n g p a r a m e t e r s . T h e y a r e i n c l u d e d i n t h e d a t a s h e e t a s e l e c t r i c c h a r a c -
7 .
t e r i s t i c s o n l y . I f tW C S ³ tW C S( m i n ) , t h e c y c l e s i s a n e a r l y w r i t e c y c l e a n d t h e d a t a o u t p u t w i l l r e m a i n h i g h i m p e d a n c e f o r t h e
d u r a t i o n o f t h e c y c l e . I f tC W D ³ tC W D ( m i n ) , tR W D ³ tR W D( m i n ) a n d tA W D ³ tA W D( m i n ) , t h e n t h e c y c l e i s
a r e a d - m o d i f y - w r i t e c y c l e
a n d t h e d a t a o u t p u t w i l l c o n t a i n t h e d a t a r e a d f r o m t h e s e l e c t e d a d d r e s s . I f n e i t h e r o f t h e a b o v e c o n d i t i o n s i s s a t i s f i e d , t h e
c o n d i t i o n o f t h e d a t a o u t i s i n d e t e r m i n a t e .
8 .
9 .
E i t h e r tR C H o r tR R H m u s t b e s a t i s f i e d f o r a r e a d c y c l e .
T h i s p a r a m e t e r s a r e r e f e r e n c e d t o t h e C A S l e a d i n g e d g e i n e a r l y w r i t e c y c l e s a n d t o t h e W f a l l i n g e d g e i n O E c o n t r o l l e d w r i t e
c y c l e a n d r e a d - m o d i f y - w r i t e c y c l e s .
1 0 . O p e r a t i o n w i t h i n t h e tR A D ( m a x ) l i m i t i n s u r e s t h a t tRAC ( m a x ) c a n b e m e t . tR A D ( m a x ) i s s p e c i f i e d a s
tRAD i s g r e a t e r t h a n t h e s p e c i f i e d tR A D ( m a x ) l i m i t , t h e n a c c e s s t i m e i s c o n t r o l l e d b y tA A.
a r e f e r e n c e p o i n t o n l y . I f
1 1 .
T h e s e s p e c i f i e c a t i o n s a r e a p p l i e d i n t h e t e s t m o d e .
1 2 . I n t e s t m o d e r e a d c y c l e , t h e v a l u e o f tR A C , tA A , tCAC i s d e l a y e d b y 2 n s t o 5 n s f o r t h e s p e c i f i e d v a l u e s . T h e s e p a r a m e t e r s
s h o u l d b e s p e c i f i e d i n t e s t m o d e c y c l e s b y a d d i n g t h e a b o v e v a l u e t o t h e s p e c i f i e d v a l u e i n t h i s d a t a s h e e t .
1 3 .
1 4 .
tA S C , tCAH a r e r e f e r e n c e d t o t h e e a r l i e r C A S f a l l i n g e d g e .
tCP i s s p e c i f i e d f r o m t h e l a s t C A S r i s i n g e d g e i n t h e p r e v i o u s c y c l e t o t h e f i r s t C A S f a l l i n g e d g e i n t h e n e x t c y c l e .
1 5 . tC W D i s r e f e r e n c e d t o t h e l a t e r C A S f a l l i n g e d g e a t w o r d r e a d - m o d i f y - w r i t e c y c l e .
K4E64(6)1612D Truth Table
R A S
L C A S
U C A S
W
X
X
H
H
H
L
O E
X
D Q 0 - D Q 7
H i - Z
D Q 8 - D Q 1 5
Hi-Z
S T A T E
S t a n d b y
R e f r e s h
H
L
L
L
L
L
L
L
L
X
H
L
X
H
H
L
X
H i - Z
Hi-Z
L
D Q - O U T
H i - Z
Hi-Z
B y t e R e a d
B y t e R e a d
W o r d R e a d
B y t e W r i t e
B y t e W r i t e
W o r d W r i t e
-
H
L
L
D Q - O U T
D Q - O U T
-
L
L
D Q - O U T
D Q - I N
-
L
H
L
H
H
H
H
H
L
L
D Q - I N
D Q - I N
Hi-Z
L
L
D Q - I N
H i - Z
L
L
H
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
tC W L i s s p e c i f i e d f r o m W f a l l i n g e d g e t o t h e e a r l i e r C A S r i s i n g e d g e .
1 6 .
1 7 . tCSR i s r e f e r e n c e d t o e a r l i e r C A S f a l l i n g b e f o r e R A S t r a n s i t i o n l o w .
1 8 .
tC H R i s r e f e r e n c e d t o t h e l a t e r C A S rising high after R A S t r a n s i t i o n l o w .
R A S
L C A S
U C A S
tCSR
tC H R
1 9 . tDS i s s p e c i f i e d f o r t h e e a r l i e r C A S f a l l i n g e d g e a n d tDH i s s p e c i f i e d b y t h e l a t e r C A S f a l l i n g e d g e i n e a r l y w r i t e c y c l e .
L C A S
U C A S
tD S
tDH
D i n
D Q 0
~ D Q 1 5
If R A S g o e s h i g h b e f o r e C A S h i g h g o i n g , t h e o p e n c i r c u i t c o n d i t i o n o f t h e o u t p u t i s a c h i e v e d b y C A S h i g h g o i n g .
2 0 .
2 1 .
tA S C ³ 6 n s , A s s u m e t T=2. 0ns, if t ASC £ 6 n s , t h e n t H P C ( m i n ) a n d t C A S( m i n ) m u s t b e i n c r e a s e d b y t h e v a l u e o f " 6 n s - t A S C ".
2 2 .
2 3 .
If tRASS ³ 1 0 0 u s , t h e n R A S p r e c h a r g e t i m e m u s t u s e tR P S i n s t e a d o f tR P.
F o r R A S - o n l y - R e f r e s h a n d B u r s t C A S - b e f o r e -R A S r e f r e s h m o d e , 4 0 9 6 c y c l e s ( 4 K / 8 K ) o f b u r s t r e f r e s h m u s t b e e x e c u t e d w i t h i n
6 4 m s b e f o r e a n d a f t e r s e l f r e f r e s h , i n o r d e r t o m e e t r e f r e s h s p e c i f i c a t i o n .
2 4 .
F o r d i s t r i b u t e d C A S - b e f o r e - R A S w i t h 1 5 . 6 u s i n t e r v a l , C B R r e f r e s h s h o u l d b e e x e c u t e d w i t h i n 1 5 . 6 u s i m m e d i a t e l y b e f o r e a n d
a f t e r s e l f r e f r e s h i n o r d e r t o m e e t r e f r e s h s p e c i f i c a t i o n .
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
W O R D R E A D C Y C L E
tRC
tR A S
tRP
V IH -
R A S
V IL
-
tCSH
tCRP
tC R P
tR C D
tRSH
V IH -
V IL -
tC A S
U C A S
tCSH
tCRP
tC R P
tRCD
tRSH
tC A S
V IH
V IL
-
L C A S
-
tRAD
tRAL
tA S R
tR A H
tA S C
tC A H
V IH
V IL
-
ROW
ADDRESS
C O L U M N
A
A D D R E S S
-
tRCH
tRCS
tR R H
V IH -
V IL -
W
tAA
tOLZ
V IH -
V IL -
tO E A
O E
tCAC
tC E Z
tCLZ
tOEZ
DATA-OUT
D Q 0
~ D Q 7
tRAC
V O H -
V O L -
O P E N
tCAC
tC E Z
tCLZ
tOEZ
DATA-OUT
D Q 8
~ D Q 1 5
tRAC
V O H -
V O L -
O P E N
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
L O W E R B Y T E R E A D C Y C L E
N O T E : D IN = O P E N
tR C
tR A S
tRP
V IH -
R A S
V IL -
tRPC
tCRP
V IH -
U C A S
V IL -
tCSH
tCRP
tRCD
tRSH
tC A S
V IH -
L C A S
V IL
-
tRAD
tRAL
tA S R
tRAH
tASC
tCAH
V IH -
V IL -
R O W
A D D R E S S
C O L U M N
A
A D D R E S S
tR C H
tR C S
tR R H
V IH -
V IL -
W
tC E Z
tO E Z
tA A
V IH
V IL
-
O E
tO E A
tC A C
-
tCLZ
D Q 0
~ D Q 7
tRAC
V O H -
V O L -
D A T A - O U T
O P E N
tOLZ
D Q 8
~ D Q 1 5
V O H -
O P E N
V O L -
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
U P P E R B Y T E R E A D C Y C L E
N O T E : D IN = O P E N
tRC
tR A S
tR P
V IH -
R A S
V IL -
tC S H
tC R P
tC R P
tR C D
tRSH
tC A S
V IH -
U C A S
V IL -
tC R P
tRPC
V IH -
L C A S
V IL -
tR A D
tRAL
tASR
tRAH
tA S C
tC A H
V IH -
R O W
C O L U M N
A D D R E S S
A
A D D R E S S
V IL
-
tR C H
tR C S
tR R H
V IH -
V IL
W
-
tC E Z
tO E Z
tA A
V IH -
V IL -
tO E A
tOLZ
O E
D Q 0
~ D Q 7
V O H -
V O L -
O P E N
tCAC
tCLZ
D Q 8
~ D Q 1 5
tR A C
V O H -
V O L -
O P E N
DATA-OUT
D o n ¢t care
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
W O R D W R I T E C Y C L E ( E A R L Y W R I T E )
N O T E
: D O U T = O P E N
tR C
tR A S
tRP
V IH -
V IL -
R A S
tCSH
tC R P
tC R P
tRCD
tR S H
tC A S
V IH -
V IL -
U C A S
tCSH
tC R P
tC R P
tR C D
tR S H
V IH -
V IL -
tC A S
L C A S
tRAD
tR A L
tA S R
tRAH
tASC
tC A H
V IH -
V IL -
R O W
A D D R E S S
C O L U M N
A
A D D R E S S
tW C S
tW C H
V IH -
tW P
W
V IL
-
V IH -
V IL
O E
-
tDS
D Q 0
~ D Q 7
tDH
DATA-IN
V IH -
V IL -
tDS
tDH
DATA-IN
D Q 8
~ D Q 1 5
V IH -
V IL -
D o n ¢t care
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
L O W E R B Y T E W R I T E C Y C L E ( E A R L Y W R I T E )
N O T E
: D O U T = O P E N
tR C
tRAS
tRP
V IH -
V IL
R A S
-
tC R P
V IH -
V IL
U C A S
-
tCSH
tC R P
tCRP
tRCD
tR S H
tC A S
V IH -
V IL -
L C A S
tRAD
tRAL
tASR
tR A H
tASC
tCAH
V IH -
V IL -
R O W
ADDRESS
C O L U M N
A
ADDRESS
tW C S
tW C H
V IH -
V IL -
tW P
W
V IH -
O E
V IL
-
tDS
D Q 0
~
D Q 7
tD H
V IH -
V IL -
DATA-IN
D Q 8
~
D Q 1 5
V IH -
V IL
-
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
U P P E R B Y T E W R I T E C Y C L E ( E A R L Y W R I T E )
N O T E
: D O U T = O P E N
tRC
tR A S
tR P
V IH -
V IL
R A S
-
tC S H
tC R P
tC R P
tR C D
tR S H
tC A S
V IH -
U C A S
V IL
-
tC R P
V IH -
V IL
L C A S
-
tRAD
tRAL
tASR
tRAH
tASC
tCAH
V IH -
R O W
A D D R E S S
C O L U M N
A D D R E S S
A
V IL
-
tW C S
tW C H
V IH
V IL
-
W
tW P
-
V IH -
V IL -
O E
D Q 0
~
D Q 7
V IH -
V IL -
tDS
tDH
D Q 8
~
D Q 1 5
V IH -
DATA-IN
V IL
-
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
W O R D W R I T E C Y C L E ( O E C O N T R O L L E D W R I T E )
N O T E
: D O U T = O P E N
tR C
tR A S
tRP
V IH -
V IL -
R A S
tCSH
tC R P
tC R P
tRCD
tRSH
tC A S
V IH -
V IL -
U C A S
tCSH
tC R P
tC R P
tR C D
tRSH
tCAS
V IH -
V IL -
L C A S
tRAD
tRAL
tA S R
tRAH
tA S C
tCAH
V IH -
V IL -
R O W
A D D R E S S
C O L U M N
A
A D D R E S S
tC W L
tRWL
V IH -
V IL -
tW P
W
V IH
V IL
-
O E
tO E H
-
tOED
tDS
D Q 0
~
D Q 7
tD H
DATA-IN
V IH -
V IL -
tDS
tD H
DATA-IN
D Q 8
~
D Q 1 5
V IH -
V IL
-
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
L O W E R B Y T E W R I T E C Y C L E ( O E C O N T R O L L E D W R I T E )
N O T E
: D O U T = O P E N
tRC
tR A S
tR P
V IH -
V IL -
R A S
tR P C
tC R P
V IH -
V IL -
U C A S
tC S H
tC R P
tC R P
tR C D
tR S H
tC A S
V IH -
L C A S
V IL
-
tR A D
tRAL
tASR
tRAH
tA S C
tCAH
V IH -
V IL -
R O W
A D D R E S S
C O L U M N
A D D R E S S
A
tCWL
tR W L
V IH -
tW P
W
V IL
-
V IH -
V IL -
tO E H
O E
tO E D
tDS
tDH
D Q 0
~ D Q 7
V IH -
V IL -
DATA-IN
D Q 8
~
D Q 1 5
V IH -
V IL
-
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
U P P E R B Y T E W R I T E C Y C L E ( OE C O N T R O L L E D W R I T E )
N O T E
: D O U T = O P E N
tRC
tR A S
tRP
V IH -
V IL -
R A S
tCSH
tCRP
tC R P
tR C D
tRSH
V IH -
V IL -
tC A S
U C A S
tCRP
tC R P
V IH -
V IL -
L C A S
tRAD
tR A L
tA S R
tRAH
tASC
tCAH
V IH -
V IL -
R O W
A D D R E S S
C O L U M N
A
A D D R E S S
tC W L
tR W L
V IH -
V IL -
W
tW P
V IH -
V IL -
tOEH
O E
tOED
D Q 0
~ D Q 7
V IH -
V IL -
tDS
tDH
D Q 8
~
D Q 1 5
V IH -
DATA-IN
V IL
-
D o n ¢t care
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
W O R D R E A D - M O D I F Y - W R I T E C Y C L E
tR W C
tR A S
tRP
V IH -
R A S
V IL -
tC R P
tRCD
tR S H
tC A S
V IH
V IL
-
U C A S
-
tC R P
tRCD
tR S H
tC A S
V IH -
V IL -
L C A S
tRAD
tC S H
tA S R
tRAH
tA S C
tCAH
V IH -
V IL -
R O W
A D D R .
C O L U M N
A
ADDRESS
tA W D
tRWL
tC W L
tW P
tCWD
V IH -
V IL -
W
tR W D
tO E A
V IH -
O E
V IL
-
tOLZ
tCLZ
tC A C
tO E D
tO E Z
tAA
tD S
tD H
D Q 0
~
D Q 7
tRAC
V I/OH -
V I/OL -
VALID
VALID
DATA-IN
DATA-OUT
tOLZ
tCLZ
tRAC
tCAC
tA A
tO E D
tO E Z
tD S
tD H
D Q 8
~ D Q 1 5
V I/OH -
V I/OL -
VALID
DATA-OUT
VALID
DATA-IN
D o n ¢t c a r e
U n d e f i n e d
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
LOWER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRAS
tRP
VIH -
RAS
VIL -
tRPC
tCRP
VIH -
UCAS
VIL -
tCRP
tRCD
tRSH
VIH -
VIL -
tCAS
LCAS
tRAD
tRAH
tCSH
tASR
tASC
tCAH
VIH -
VIL -
ROW
ADDR.
COLUMN
ADDRESS
A
tAWD
tRWL
tCWL
tW P
tCWD
VIH -
VIL -
W
tRWD
tOEA
VIH -
VIL -
OE
tOLZ
tCLZ
tCAC
tOED
tOEZ
tAA
tD S
tDH
DQ0 ~ DQ7
tRAC
VI/OH -
VALID
DATA-OUT
VALID
DATA-IN
VI/OL -
DQ8 ~ DQ15
VOH -
OPEN
VOL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
UPPER-BYTE READ - MODIFY - WRITE CYCLE
tRWC
tRAS
tRP
VIH -
VIL -
RAS
UCAS
LCAS
tCRP
tCRP
tRCD
tRSH
tCAS
VIH -
VIL -
tRPC
VIH -
VIL -
tRAD
tRAH
tCSH
tASR
tASC
tCAH
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
A
tAWD
tRWL
tCWL
tW P
tCWD
VIH -
VIL -
W
tRWD
tOEA
VIH -
VIL -
OE
DQ0 ~ DQ7
VOH -
OPEN
VOL -
tOLZ
tCLZ
tCAC
tOED
tAA
tD S
tDH
DQ8 ~ DQ15
tRAC
tOEZ
VI/OH -
VALID
DATA-OUT
VALID
DATA-IN
VI/OL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE WORD READ CYCLE
tRASP
tRP
VIH -
RAS
VIL -
tCSH
tRHCP
tCAS
tHPC
tHPC
tCAS
tHPC
tCAS
tCRP
tC P
tC P
tCP
tRCD
tCAS
VIH -
VIL -
UCAS
tREZ
tCRP
tASR
tC P
tCP
tCP
tRCD
tCAS
tCAH
tCAS
tCAS
tCAH
tCAS
tCAH
VIH -
VIL -
LCAS
tRAD
tRAH tASC
tASC
tCAH
tASC
tASC
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
A
ADDRESS
tRAL
tRRH
tRCS
tRCH
VIH -
VIL -
W
tCPA
tCAC
tAA
tAA
tCPA
tCAC
tCAC
tAA
tCPA
tCHO
tOEP
tOCH
tOEA
tOEA
VIH -
VIL -
OE
tCAC
tOEP
tOEZ
tDOH
DQ0 ~ DQ7
VOH -
tRAC
tOEZ
tOEZ
VALID
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
VOL -
tOLZ
tCLZ
tCAC
tOEP
tOEZ
tDOH
tOEZ
tRAC
DQ8 ~ DQ15
VOH -
VALID
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
VOL -
tOLZ
tCLZ
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE LOWER BYTE READ CYCLE
tRP
tRASP
VIH -
RAS
VIL -
¡ó
tRPC
tCRP
VIH -
UCAS
tCSH
tRHCP
tHPC
VIL -
tHPC
tHPC
tREZ
tCP
tCP
tC P
tRCD
tCAS
tCAH
tCAS
tCAS
tCAS
tCAH
VIH -
VIL -
LCAS
tRAD
tRAH tASC
tASR
tASC
tCAH
tASC
tCAH tASC
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
COLUMN
ADDR
COLUMN
A
ADDRESS
tRAL
tRRH
tRCS
tRCH
VIH -
VIL -
W
tCPA
tCAC
tAA
tAA
tCPA
tCAC
tCAC
tAA
tCPA
tAA
tOEA
tCHO
tOEP
tOCH
tOEA
tOEP
tOEZ
VIH -
VIL -
OE
tCAC
tDOH
DQ0 ~ DQ7
VOH -
tOEZ
tOEZ
tRAC
VALID
DATA-OUT
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
VOL -
tOLZ
tCLZ
DQ8 ~ DQ15
VOH -
OPEN
VOL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE UPPER BYTE READ CYCLE
tRASP
tRP
VIH -
RAS
VIL -
¡ó
tCSH
tRHCP
tCAS
tHPC
tCAS
tHPC
tCAS
tHPC
tCAS
tCRP
tC P
tC P
tCP
tRCD
tRPC
tRPC
VIH -
VIL -
UCAS
tCRP
tASR
VIH -
VIL -
LCAS
tRAD
tRAH tASC
tCAH
tASC
tCAH
tASC
tCAH
tASC
tCAH
tREZ
VIH -
VIL -
ROW
ADDR.
COLUMN
ADDRESS
COLUMN
COLUMN
ADDR.
COLUMN
A
ADDRESS
ADDRESS
tRAL
tRRH
tRCS
tRCH
VIH -
VIL -
W
tCPA
tCAC
tAA
tCAC
tAA
tCPA
tAA
tCPA
tCAC
tCHO
tOEP
tOCH
tOEA
tOEA
VIH -
VIL -
OE
DQ0 ~ DQ7
VOH -
OPEN
VOL -
tCAC
tOEP
tOEZ
tDOH
tOEZ
tOEZ
tRAC
DQ8 ~ DQ15
VOH -
VALID
DATA-OUT
VALID
VALID
VALID
VALID
DATA-OUT
DATA-OUT
DATA-OUT
DATA-OUT
VOL -
tOLZ
tCLZ
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE WORD WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
tR P
VIH -
RAS
tRHCP
VIL -
¡ó
tHPC
tHPC
tHPC
tRSH
tCRP
tCRP
tCP
tCP
tCP
tCP
tCRP
tRCD
tRCD
VIH -
VIL -
tCAS
tCAS
¡ó
tCAS
UCAS
LCAS
tHPC
tRSH
VIH -
VIL -
tCAS
tCAS
¡ó
tCAS
tRAD
tRAL
tCAH
tCSH
tASC
tASR
tRAH
tCAH
tASC
tCAH
COLUMN
tASC
¡ó
¡ó
VIH -
VIL -
ROW
ADDR
COLUMN
ADDRESS
COLUMN
ADDRESS
A
ADDRESS
tWCS
tW P
tWCH
tWCS
tWCH
tWP
tWCS
tWCH
tWP
¡ó
VIH -
VIL -
W
¡ó
¡ó
VIH -
VIL -
OE
tDS
tDS
tDH
tD S
tDH
tDS
tDH
DQ0 ~ DQ7
VIH -
¡ó
¡ó
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
VIL -
tDH
tD S
tDH
tDS
tDH
DQ8 ~ DQ15
VIH -
¡ó
¡ó
VALID
VALID
VALID
DATA-IN
DATA-IN
DATA-IN
VIL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE LOWER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
tRP
VIH -
tRHCP
RAS
VIL -
¡ó
tRPC
tCRP
VIH -
UCAS
VIL -
tHPC
tHPC
tRSH
tCRP
tRCD
tCP
tC P
VIH -
VIL -
tCAS
tCAS
¡ó
tCAS
LCAS
tRAD
tRAL
tCAH
tCSH
tASC
tASR
tASC
tCAH
tRAH
tASC
tCAH
¡ó
¡ó
VIH -
VIL -
ROW
ADDR
COLUMN
COLUMN
COLUMN
ADDRESS
A
ADDRESS
ADDRESS
tWCS
tWP
tWCH
tWCS
tWCH
tWP
tWCS
tWCH
tW P
¡ó
VIH -
VIL -
W
¡ó
¡ó
VIH -
VIL -
OE
tDS
tDH
tD S
tDH
tD S
tDH
DQ0 ~ DQ7
¡ó
¡ó
VIH -
VIL -
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
DQ8 ~ DQ15
VIH -
VIL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE UPPER BYTE WRITE CYCLE ( EARLY WRITE )
NOTE : DOUT = OPEN
tRASP
tR P
VIH -
tRHCP
RAS
VIL -
¡ó
tHPC
tHPC
tRSH
tCRP
tCRP
tRCD
tCP
tCP
VIH -
VIL -
tCAS
tCAS
¡ó
tCAS
UCAS
LCAS
tRPC
VIH -
VIL -
tRAD
tRAL
tCAH
tCSH
tASC
tASR
tRAH
tCAH
tASC
tCAH
COLUMN
tASC
¡ó
¡ó
VIH -
VIL -
ROW
COLUMN
ADDRESS
COLUMN
ADDRESS
A
ADDR
ADDRESS
tWCS
tWP
tWCH
tWCS
tWCH
tWP
tWCS
tWCH
tW P
¡ó
VIH -
VIL -
W
¡ó
¡ó
VIH -
VIL -
OE
DQ0 ~ DQ7
¡ó
¡ó
VIH -
VIL -
tD S
tDH
tD S
tDH
tDS
tDH
DQ8 ~ DQ15
¡ó
¡ó
VIH -
VALID
DATA-IN
VALID
DATA-IN
VALID
DATA-IN
VIL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE WORD READ - MODIFY - WRITE CYCLE
tRP
tRASP
VIH -
VIL -
tCSH
tHPRWC
RAS
tRSH
tCRP
tCRP
tRCD
tRCD
tCRP
tCRP
tCP
tCP
VIH -
VIL -
tCAS
tCAS
tCAS
UCAS
LCAS
VIH -
VIL -
tCAS
tRAD
tRAH
tRAL
tCAH
tCAH
tASR
tASC
tASC
VIH -
VIL -
ROW
ADDR
COL.
COL.
A
W
ADDR
ADDR
tRWL
tCWL
tRCS
tCWL
tRCS
VIH -
VIL -
tWP
tW P
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
VIH -
VIL -
tOEA
tOEA
OE
tOED
tOED
tCAC
tCAC
tDH
tDH
tAA
tAA
tDS
tDS
tOEZ
tOEZ
DQ0 ~ DQ7
tRAC
VI/OH -
VI/OL -
tCLZ
tCLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
tOED
tOED
tCAC
tAA
tCAC
tDH
tDH
tAA
tD S
tDS
tOEZ
tOEZ
DQ8 ~ DQ15
tRAC
tCLZ
VI/OH -
VI/OL -
tCLZ
VALID
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-OUT
DATA-IN
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE
tR P
tRASP
VIH -
VIL -
tCSH
tHPRWC
RAS
tRPC
tCRP
tCRP
VIH -
VIL -
UCAS
LCAS
tRSH
tCAS
tRCD
tCP
tCRP
VIH -
VIL -
tCAS
tRAD
tRAH
tRAL
tCAH
tCAH
tASR
tASC
tASC
VIH -
VIL -
ROW
ADDR
COL.
COL.
A
ADDR
ADDR
tRWL
tCWL
tRCS
tRCS
tCWL
VIH -
VIL -
tWP
tW P
W
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
VIH -
VIL -
tOEA
tOEA
OE
tOED
tOED
tCAC
tCAC
tDH
tAA
tDH
tAA
tDS
tOEZ
tD S
DQ0 ~ DQ7
tRAC
tOEZ
VI/OH -
VI/OL -
tCLZ
tCLZ
tOLZ
tOLZ
VALID
DATA-OUT
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
OPEN
VI/OL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
tRP
tRASP
VIH -
VIL -
tCSH
tHPRWC
RAS
tRSH
tCAS
tCRP
tCRP
tRCD
tCP
tCRP
VIH -
VIL -
tCAS
UCAS
LCAS
tRPC
VIH -
VIL -
tRAD
tRAH
tRAL
tCAH
tCAH
tASR
tASC
tASC
VIH -
VIL -
ROW
ADDR
COL.
COL.
A
W
ADDR
ADDR
tRWL
tCWL
tRCS
tRCS
tCWL
VIH -
VIL -
tWP
tW P
tCWD
tAWD
tRWD
tCWD
tAWD
tCPWD
VIH -
VIL -
tOEA
tOEA
OE
DQ0 ~ DQ7
VI/OH -
VI/OL -
OPEN
tOLZ
tOLZ
tOED
tOED
tCAC
tCAC
tAA
tDH
tDH
tAA
tOEZ
tDS
tD S
DQ8 ~ DQ15
tRAC
tCLZ
tOEZ
VI/OH -
VI/OL -
tCLZ
VALID
VALID
DATA-OUT
VALID
DATA-OUT
VALID
DATA-IN
DATA-IN
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HYPER PAGE READ AND WRITE MIXED CYCLE
tRP
tRASP
VIH -
VIL -
READ( tCAC)
READ(tCPA)
READ(tAA )
WRITE
RAS
tRHCP
tHPC
tHPC
tHPC
tC P
tC P
tCP
tCP
tCP
tCP
VIH -
VIL -
tCAS
tCAS
tCAS
tCAS
tHPC
tCAS
tHPC
UCAS
LCAS
tRCD
tHPC
tCAS
VIH -
VIL -
tCAS
tCAS
tCAH
tRAD
tRAH
tASC
tCAH
tASR
tCAH
tASC
tASC
tCAH
tASC
VIH -
VIL -
ROW
ADDR
COLUMN
COLUMN
COL.
ADDR
COL.
A
ADDRESS
ADDR
ADDRESS
tRCS
tRAL
tRCH
tRCS
tRCH
tWCH
tRCH
VIH -
VIL -
tWCS
W
tWPE
tCPA
tCLZ
tWED
VIH -
VIL -
OE
tOEA
tDH
tDS
tWEZ
tCAC
tAA
tRAC
tWEZ
tAA
tREZ
DQ0 ~ DQ7
VI/OH -
VALID
VALID
VALID
VALID
DATA-OUT
DATA-IN
DATA-OUT
DATA-OUT
VI/OL -
tOEA
tCAC
tAA
tRAC
tDH
tDS
tWEZ
tWEZ
tAA
tREZ
DQ8 ~ DQ15
VI/OH -
VALID
VALID
VALID
VALID
DATA-OUT
DATA-IN
DATA-OUT
DATA-OUT
VI/OL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
RAS - ONLY REFRESH CYCLE
NOTE : W, OE , DIN = Don¢t care
DOUT = OPEN
tRC
tRP
VIH -
RAS
VIL -
tRAS
tRPC
tCRP
VIH -
UCAS
VIL -
tCRP
VIH -
LCAS
VIL -
tASR
tRAH
VIH -
VIL -
ROW
ADDR
A
CAS - BEFORE - RAS REFRESH CYCLE
NOTE : OE, A = Don¢t care
tRC
tRP
tRP
tRAS
VIH -
RAS
VIL -
tRPC
tCP
tRPC
tCSR
tCSR
VIH -
VIL -
tCHR
tCHR
UCAS
LCAS
tCP
VIH -
VIL -
DQ0 ~ DQ7
tCEZ
VOH -
OPEN
OPEN
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tWRP
tWRH
VIH -
VIL -
W
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HIDDEN REFRESH CYCLE ( READ )
tRC
tRAS
tRC
tRAS
tRP
tRP
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tRSH
tCHR
tCHR
VIH -
VIL -
UCAS
LCAS
tCRP
tRCD
VIH -
VIL -
tRAD
tASR
tRAH
tASC
tCAH
VIH -
VIL -
ROW
ADDRESS
COLUMN
ADDRESS
A
W
tWRH
tRCS
VIH -
VIL -
tRAL
tAA
VIH -
VIL -
tOEA
OE
tCEZ
tREZ
tCAC
tOLZ
tCLZ
tRAC
tWEZ
DQ0 ~ DQ7
tOEZ
VOH -
VOL -
DATA-OUT
OPEN
DQ8 ~ DQ15
VOH -
DATA-OUT
OPEN
VOL -
Don¢t care
Undefined
* In Hidden refresh cycle of 64Mb A-die & B-die, when CAS signal transits from Low to High, the valid data may be cut off.
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : DOUT = OPEN
tRC
tRC
tR P
tR P
tRAS
tRAS
VIH -
RAS
VIL -
tCRP
tRCD
tRSH
tRSH
tCHR
tCHR
VIH -
UCAS
VIL -
tCRP
tRCD
VIH -
LCAS
VIL -
tRAD
tASR
tRAH
tASC
tCAH
COLUMN
VIH -
VIL -
ROW
ADDRESS
A
W
ADDRESS
tWRH
tWRP
tWCS
tWCH
VIH -
VIL -
tW P
VIH -
VIL -
OE
tD S
tD S
tDH
DATA-IN
DQ0 ~ DQ7
VIH -
VIL -
tDH
DATA-IN
DQ8 ~ DQ15
VIH -
VIL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
CAS - BEFORE - RAS SELF REFRESH CYCLE
NOTE : OE , A = Don¢t care
tRP
tRASS
tRPS
VIH -
RAS
VIL -
tRPC
tC P
tRPC
tCHS
tCHS
tCSR
VIH -
UCAS
VIL -
tCP
tCSR
VIH -
VIL -
LCAS
tCEZ
DQ0 ~ DQ7
VOH -
OPEN
OPEN
VOL -
DQ8 ~ DQ15
VOH -
VOL -
tWRP
tWRH
VIH -
W
VIL -
TEST MODE IN CYCLE
NOTE : OE , A = Don¢t care
tRC
tRP
tR P
tRAS
VIH -
RAS
VIL -
tRPC
tRPC
tCP
tCSR
tCSR
VIH -
VIL -
tCHR
tCHR
UCAS
LCAS
tCP
VIH -
VIL -
tWTS
VIL -
VIH -
tWTH
W
tCEZ
DQ0 ~ DQ15
VOH -
OPEN
VOL -
Don¢t care
Undefined
Industrial Temperature
K4E661612D,K4E641612D
CMOS DRAM
PACKAGE DIMENSION
50 TSOP(II) 400mil
Units : Inches (millimeters)
0.004 (0.10)
0.010 (0.25)
0.841 (21.35)
MAX
0.821 (20.85)
0.829 (21.05)
0.047 (1.20)
MAX
0.010 (0.25)
TYP
O
0~8
0.018 (0.45)
0.030 (0.75)
0.034 (0.875)
0.0315 (0.80)
0.002 (0.05)
MIN
0.010 (0.25)
0.018 (0.45)
相关型号：
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