K4E661612B-TC60 [SAMSUNG]

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50;
K4E661612B-TC60
型号: K4E661612B-TC60
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

动态存储器 光电二极管 内存集成电路
文件: 总36页 (文件大小:885K)
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K4E661612B-TC600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E661612B-TL50

EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E661612B-TL60

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E661612B-TL600

EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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0 SAMSUNG

K4E661612C

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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19 SAMSUNG

K4E661612C-45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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19 SAMSUNG

K4E661612C-45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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14 SAMSUNG

K4E661612C-50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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10 SAMSUNG

K4E661612C-50

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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20 SAMSUNG

K4E661612C-60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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14 SAMSUNG

K4E661612C-60

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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9 SAMSUNG

K4E661612C-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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8 SAMSUNG

K4E661612C-L

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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16 SAMSUNG

K4E661612C-L45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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20 SAMSUNG

K4E661612C-L45

4M x 16bit CMOS Dynamic RAM with Extended Data Out

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9 SAMSUNG