K4A4G165WE-BITD [SAMSUNG]
4Gb E-die DDR4 SDRAM x16 only;型号: | K4A4G165WE-BITD |
厂家: | SAMSUNG |
描述: | 4Gb E-die DDR4 SDRAM x16 only 动态存储器 双倍数据速率 |
文件: | 总69页 (文件大小:1954K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Rev. 1.4, Jun. 2016
K4A4G165WE
4Gb E-die DDR4 SDRAM x16 only
96FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
1.2V
datasheet
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- 1 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Revision History
Revision No.
History
Draft Date
Remark
Editor
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
J.Y.Lee
1.0
1.1
1.2
1.3
1.4
- First SPEC release
19th Oct. 2015
27th Oct. 2015
11th Apr. 2016
27th May. 2016
28th Jun. 2016
-
-
-
-
-
- Addition of values on page 10 [Table 5]
- Addition of Industrial temp
- Correction of typo
- Addition of DDR4-2666
- 2 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Table Of Contents
4Gb E-die DDR4 SDRAM x16 only
1. Ordering Information.....................................................................................................................................................4
2. Key Features.................................................................................................................................................................4
3. Package pinout/Mechanical Dimension & Addressing..................................................................................................5
3.1 x16 Package Pinout (Top view) : 96ball FBGA Package ........................................................................................5
3.2 FBGA Package Dimension (x16).............................................................................................................................6
4. Input/Output Functional Description..............................................................................................................................7
5. DDR4 SDRAM Addressing ...........................................................................................................................................9
6. Absolute Maximum Ratings ..........................................................................................................................................10
6.1 Absolute Maximum DC Ratings...............................................................................................................................10
6.2 DRAM Component Operating Temperature Range ................................................................................................10
7. AC & DC Operating Conditions.....................................................................................................................................10
8. AC & DC Input Measurement Levels...........................................................................................................................11
8.1 AC & DC Logic input levels for single-ended signals ..............................................................................................11
8.2 VREF Tolerances ....................................................................................................................................................11
8.3 AC & DC Logic Input Levels for Differential Signals...............................................................................................12
8.3.1. Differential signals definition ............................................................................................................................12
8.3.2. Differential swing requirement for clock (CK_t - CK_c)....................................................................................12
8.3.3. Single-ended requirements for differential signals...........................................................................................13
8.3.4. Address, Command and Control Overshoot and Undershoot specifications...................................................14
8.3.5. Clock Overshoot and Undershoot Specifications.............................................................................................15
8.3.6. Data, Strobe and Mask Overshoot and Undershoot Specifications.................................................................16
8.4 Slew Rate Definitions ..............................................................................................................................................17
8.4.1. Slew Rate Definitions for Differential Input Signals (CK) .................................................................................17
8.4.2. Slew Rate Definition for Single-ended Input Signals ( CMD/ADD )..................................................................18
8.5 Differential Input Cross Point Voltage......................................................................................................................19
8.6 CMOS rail to rail Input Levels..................................................................................................................................20
8.6.1. CMOS rail to rail Input Levels for RESET_n ....................................................................................................20
8.7 AC and DC Logic Input Levels for DQS Signals......................................................................................................21
8.7.1. Differential signal definition ..............................................................................................................................21
8.7.2. Differential swing requirements for DQS (DQS_t - DQS_c).............................................................................21
8.7.3. Peak voltage calculation method .....................................................................................................................21
8.7.4. Differential Input Cross Point Voltage ..............................................................................................................22
8.7.5. Differential Input Slew Rate Definition..............................................................................................................23
9. AC and DC output Measurement levels........................................................................................................................24
9.1 Output Driver DC Electrical Characteristics.............................................................................................................24
9.1.1. Alert_n output Drive Characteristic ..................................................................................................................26
9.1.2. Output Driver Characteristic of Connectivity Test ( CT ) Mode ........................................................................26
9.2 Single-ended AC & DC Output Levels.....................................................................................................................27
9.3 Differential AC & DC Output Levels.........................................................................................................................27
9.4 Single-ended Output Slew Rate ..............................................................................................................................28
9.5 Differential Output Slew Rate ..................................................................................................................................29
9.6 Single-ended AC & DC Output Levels of Connectivity Test Mode..........................................................................30
9.7 Test Load for Connectivity Test Mode Timing.........................................................................................................30
10. Speed Bin ...................................................................................................................................................................31
10.1 Speed Bin Table Note ...........................................................................................................................................36
11. IDD and IDDQ Specification Parameters and Test conditions....................................................................................37
11.1 IDD, IPP and IDDQ Measurement Conditions.......................................................................................................37
11.2 4Gb DDR4 SDRAM E-die IDD Specification Table...............................................................................................52
12. Input/Output Capacitance ...........................................................................................................................................54
13. Electrical Characteristics & AC Timing .......................................................................................................................56
13.1 Reference Load for AC Timing and Output Slew Rate..........................................................................................56
13.2 tREFI .....................................................................................................................................................................56
13.3 Timing Parameters by Speed Grade.....................................................................................................................57
- 3 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
13.4 The DQ input receiver compliance mask for voltage and timing ...........................................................................63
13.5 DDR4 Function Matrix ...........................................................................................................................................67
- 4 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1. Ordering Information
[ Table 1 ] Samsung 4Gb DDR4 E-die ordering information table
2
2
Organization
256Mx16
DDR4-2133 (15-15-15)
K4A4G165WE-BCPB
K4A4G165WE-BIPB
Package
96FBGA
96FBGA
DDR4-2400 (17-17-17)
K4A4G165WE-BCRC
K4A4G165WE-BIRC
DDR4-2666 (19-19-19)
K4A4G165WE-BCTD
K4A4G165WE-BITD
256Mx16
NOTE :
1. Speed bin is in order of CL-tRCD-tRP.
2. Backward compatible to lower frequency
3. 13th digit stands for below.
"C" : Commercial temp/Normal power
"I" : Industrial temp/Normal power
2. Key Features
[ Table 2 ] 4Gb DDR4 E-die Speed bins
DDR4-1600
DDR4-1866
13-13-13
1.071
13
DDR4-2133
15-15-15
0.938
15
DDR4-2400
17-17-17
0.833
17
DDR4-2666
Speed
Unit
11-11-11
19-19-19
0.75
tCK(min)
CAS Latency
tRCD(min)
tRP(min)
1.25
11
ns
nCK
ns
19
13.75
13.75
35
13.92
13.92
34
14.06
14.06
33
14.16
14.16
32
14.25
14.25
32
ns
tRAS(min)
tRC(min)
ns
48.75
47.92
47.06
46.16
46.25
ns
•
•
JEDEC standard 1.2V (1.14V~1.26V)
The 4Gb DDR4 SDRAM E-die is organized as a 32Mbit x 16 I/Os x 8banks
device. This synchronous device achieves high speed double-data-rate
transfer rates of up to 2666Mb/sec/pin (DDR4-2666) for general applica-
tions.
V
V
= 1.2V (1.14V~1.26V)
DDQ
•
•
= 2.5V (2.375V~2.75V)
PP
800 MHz f for 1600Mb/sec/pin,933 MHz f for 1866Mb/sec/pin,
CK
CK
1067MHz f for 2133Mb/sec/pin, 1200MHz f for 2400Mb/sec/pin,
CK
CK
The chip is designed to comply with the following key DDR4 SDRAM fea-
tures such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
1333MHz f for 2666Mb/sec/pin
CK
•
•
8 Banks (2 Bank Groups)
Programmable CAS Latency(posted CAS):
10,11,12,13,14,15,16,17,18,19,20
All of the control and address inputs are synchronized with a pair of exter-
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
ion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. The DDR4 device operates
•
Programmable CAS Write Latency (CWL) = 9,11 (DDR4-1600) ,
10,12 (DDR4-1866) ,11,14 (DDR4-2133) ,12,16 (DDR4-2400) and
14,18 (DDR4- 2666)
•
•
8-bit pre-fetch
Burst Length: 8 , 4 with tCCD = 4 which does not allow seamless read
or write [either On the fly using A12 or MRS]
•
•
Bi-directional Differential Data-Strobe
with a single 1.2V (1.14V~1.26V) power supply, 1.2V(1.14V~1.26V) V
DDQ
Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
and 2.5V (2.375V~2.75V) V
.
PP
•
•
On Die Termination using ODT pin
The 4Gb DDR4 E-die device is available in 96ball FBGAs(x16).
Average Refresh Period 7.8us at lower than T
85C, 3.9us at
CASE
85C < T
< 95 C
CASE
•
Support Industrial Temp ( -4095C )
- tREFI 7.8us at -40 °C ≤ TCASE ≤ 85°C
- tREFI 3.9us at 85 °C < TCASE ≤ 95°C
•
•
•
•
•
•
•
•
•
•
•
•
Asynchronous Reset
Package : 96 balls FBGA - x16
All of Lead-Free products are compliant for RoHS
All of products are Halogen-free
CRC(Cyclic Redundancy Check) for Read/Write data security
Command address parity check
DBI(Data Bus Inversion)
Gear down mode
POD (Pseudo Open Drain) interface for data input/output
Internal VREF for data inputs
External VPP for DRAM Activating Power
PPR is supported
NOTE : 1. This data sheet is an abstract of full DDR4 specification and does not cover the common features which are described in “DDR4 SDRAM Device Operation & Timing
Diagram”.
2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
- 4 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
3. Package pinout/Mechanical Dimension & Addressing
3.1 x16 Package Pinout (Top view) : 96ball FBGA Package
1
2
3
4
5
6
7
8
9
A
B
C
D
VDDQ
VPP
VSSQ
VSS
DQU0
VDD
DQSU_c
DQSU_t
DQU3
VSSQ
DQU1
DQU5
VSSQ
VDDQ
VDD
A
B
C
D
VDDQ
VDD
DQU4
VSSQ
DQU2
DQU6
VSSQ
VDDQ
DQU7
DMU_n/
DBIU_n
DML_n
DBIL_n
E
VSS
VSSQ
VSSQ
VSS
E
F
G
H
J
VSSQ
VDDQ
VSSQ
VDD
VDDQ
DQL0
DQL4
VDDQ
CKE
DQSL_c
DQSL_t
DQL2
DQL1
VDD
VDDQ
VSS
ZQ
F
G
H
J
VDDQ
VSSQ
VDD
DQL3
DQL7
CK_t
DQL5
VDDQ
CK_c
DQL6
K
VSS
ODT
VSS
K
WE_n/
A14
L
VDD
ACT_n
CS_n
RAS_n
VDD
L
M
N
P
R
T
VREFCA
VSS
BG0
BA0
A6
A10/AP
A4
A12/BC_n CAS_n
VSS
TEN
M
N
P
R
T
A3
A1
A9
NC
BA1
A5
RESET_n
VDD
A0
ALERT_n
VPP
A8
A2
A7
VSS
A11
PAR
A13
VDD
1
2
3
4
5
6
7
8
9
Ball Locations (x16)
A
B
C
D
E
F
Populated ball
Ball not populated
G
H
J
Top view
(See the balls through the package)
K
L
M
N
P
R
T
- 5 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
3.2 FBGA Package Dimension (x16)
Units : Millimeters
7.50 0.10
A
0.80 x 8 = 6.40
#A1 INDEX MARK
B
(Datum A)
0.80
1.60
6
3.20
3
9
8
7
5
4
2 1
A
B
C
D
E
F
(Datum B)
G
H
J
K
L
M
N
P
R
T
96 - 0.48 Solder ball
(Post reflow 0.50 ± 0.05)
0.2
M A B
BOTTOM VIEW
7.50 0.10
#A1
0.37 0.05
1.10 0.10
TOP VIEW
- 6 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
4. Input/Output Functional Description
[ Table 3 ] Input/Output function description
Symbol
Type
Function
Clock: CK_t and CK_c are differential clock inputs. All address and control input signals are sampled on
the crossing of the positive edge of CK_t and negative edge of CK_c.
CK_t, CK_c
Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input
buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self-Refresh operation
(all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for Self-Refresh exit.
After VREFCA and Internal DQ Vref have become stable during the power on and initialization sequence,
they must be maintained during all operations (including Self-Refresh). CKE must be maintained high
throughout read and write accesses. Input buffers, excluding CK_t,CK_cSGODT and CKE are disabled
during power-down. Input buffers, excluding CKE, are disabled during Self-Refresh.
CKE, (CKE1)
Input
Chip Select: All commands are masked when CS_n is registered HIGH. CS_n provides for external Rank
selection on systems with multiple Ranks. CS_n is considered part of the command code.
CS_n, (CS1_n)
C0,C1,C2
Input
Input
Chip ID : Chip ID is only used for 3DS for 2,4,8high stack via TSV to select each slice of stacked
component. Chip ID is considered part of the command code
On Die Termination: ODT (registered HIGH) enables RTT_NOM termination resistance internal to the
DDR4 SDRAM. When enabled, ODT is only applied to each DQ, DQS_t, DQS_c and DM_n/DBI_n/
TDQS_t, NU/TDQS_c (When TDQS is enabled via Mode Register A11=1 in MR1) signal for x8
conurations. For x16 conuration ODT is applied to each DQ, DQSU_t, DQSU_c, DQSL_t, DQSL_c,
DMU_n, and DML_n signal. The ODT pin will be ignored if MR1 is programmed to disable RTT_NOM.
ODT, (ODT1)
ACT_n
Input
Activation Command Input : ACT_n defines the Activation command being entered along with CS_n. The
input into RAS_n/A16, CAS_n/A15 and WE_n/A14 will be considered as Row Address A16, A15 and A14
Input
Input
Command Inputs: RAS_n/A16, CAS_n/A15 and WE_n/A14 (along with CS_n) define the command being
entered. Those pins have multi function. ForG example, for activation with ACT_n Low, those are
Addressing like A16,A15 and A14 but for non-activation command with ACT_n High, those are Command
pins for Read, Write and other command defined in command truth table
RAS_n/A16. CAS_n/
A15. WE_n/A14
Input Data Mask and Data Bus Inversion: DM_n is an input mask signal for write data. Input data is
masked when DM_n is sampled LOW coincident with that input data during a Write access. DM_n is
sampled on both edges of DQS. DM is muxed with DBI function by Mode Register A10,A11,A12 setting in
MR5. For x8 device, the function of DM or TDQS is enabled by Mode Register A11 setting in MR1. DBI_n
is an input/output identifing whether to store/output the true or inverted data. If DBI_n is LOW, the data will
be stored/output after inversion inside the DDR4 SDRAM and not inverted if DBI_n is HIGH. TDQS is only
supported in X8
DM_n/DBI_n/TDQS_t,
(DMU_n/DBIU_n),
(DML_n/DBIL_n)
Input/Output
Bank Group Inputs : BG0 - BG1 define to which bank group an Active, Read, Write or Precharge command
is being applied. BG0 also determines which mode register is to be accessed during a MRS cycle. X4/8
have BG0 and BG1 but X16 has only BG0
BG0 - BG1
BA0 - BA1
Input
Input
Bank Address Inputs: BA0 - BA1 define to which bank an Active, Read, Write or Precharge command is
being applied. Bank address also determines which mode register is to be accessed during a MRS cycle.
Address Inputs: Provide the row address for ACTIVATE Commands and the column address for Read/
Write commands to select one location out of the memory array in the respective bank. (A10/AP, A12/
BC_n, RAS_n/A16, CAS_n/A15 and WE_n/A14 have additional functions, see other rows.The address
inputs also provide the op-code during Mode Register Set commands.A17 is only defined for the x4
conuration.
A0 - A17
A10 / AP
Input
Input
Auto-precharge: A10 is sampled during Read/Write commands to determine whether Autoprecharge
should be performed to the accessed bank after the Read/Write operation. (HIGH: Autoprecharge; LOW:
no Autoprecharge).A10 is sampled during a Precharge command to determine whether the Precharge
applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is
selected by bank addresses.
Burst Chop: A12 / BC_n is sampled during Read and Write commands to determine if burst chop (on-the-
fly) will be performed. (HIGH, no burst chop; LOW: burst chopped). See command truth table for details.
A12 / BC_n
RESET_n
Input
Input
Active Low Asynchronous Reset: Reset is active when RESET_n is LOW, and inactive when RESET_n is
HIGH. RESET_n must be HIGH during normal operation. RESET_n is a CMOS rail to rail signal with DC
high and low at 80% and 20% of V
,
DD
Data Input/ Output: Bi-directional data bus. If CRC is enabled via Mode register then CRC code is added at
the end of Data Burst. Any DQ from DQ0~DQ3 may indicate the internal Vref level during test via Mode
Register Setting MR4 A4=High. During this mode, RTT value should be set to Hi-Z. Refer to vendor
specific datasheets to determine which DQ is used.
DQ
Input / Output
Input / Output
Data Strobe: output with read data, input with write data. Edge-aligned with read data, centered in write
data. For the x16, DQSL corresponds to the data on DQL0-DQL7; DQSU corresponds to the data on
DQU0-DQU7. The data strobe DQS_t, DQSL_t and DQSU_t are paired with differential signals DQS_c,
DQSL_c, and DQSU_c, respectively, to provide differential pair signaling to the system during reads and
writes. DDR4 SDRAM supports differential data strobe only and does not support single-ended.
DQS_t, DQS_c,
DQSU_t, DQSU_c,
DQSL_t, DQSL_c
- 7 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Symbol
Type
Function
Termination Data Strobe: TDQS_t/TDQS_c is applicable for x8 DRAMs only. When enabled via Mode
Register A11 = 1 in MR1, the DRAM will enable the same termination resistance function on TDQS_t/
TDQS_c that is applied to DQS_t/DQS_c. When disabled via mode register A11 = 0 in MR1, DM/DBI/
TDQS will provide the data mask function or Data Bus Inversion depending on MR5; A11,12,10and
TDQS_c is not used. x4/x16 DRAMs must disable the TDQS function via mode register A11 = 0 in MR1.
TDQS_t, TDQS_c
Output
Command and Address Parity Input : DDR4 Supports Even Parity check in DRAM with MR setting. Once
it’s enabled via Register in MR5, then DRAM calculates Parity with ACT_n,RAS_n/A16,CAS_n/A15,WE_n/
A14,BG0-BG1,BA0-BA1,A17-A0, and C0-C2 (3DS devices). Input parity should maintain at the rising edge
of the clock and at the same time with command & address with CS_n LOW
PAR
Input
Alert : It has multi functions such as CRC error flag , Command and Address Parity error flag as Output
signal. If there is error in CRC, then Alert_n goes LOW for the period time interval and goes back HIGH. If
there is error in Command Address Parity Check, then Alert_n goes LOW for relatively long period until on
going DRAM internal recovery transaction to complete. During Connectivity Test mode, this pin works as
input.
ALERT_n
Input/Output
Using this signal or not is dependent on system. In case of not connected as Signal, ALERT_n Pin must be
bounded to VDD on board.
Connectivity Test Mode Enable : Required on X16 devices and optional input on x4/x8 with densities equal
to or greater than 8Gb.HIGH in this pin will enable Connectivity Test Mode operation along with other pins.
It is a CMOS rail to rail signal with AC high and low at 80% and 20% of VDD. Using this signal or not is
dependent on System. This pin may be DRAM internally pulled low through a weak pull-down resistor to
VSS.
TEN
Input
NC
VDDQ
VSSQ
VDD
No Connect: No internal electrical connection is present.
DQ Power Supply: 1.2 V +/- 0.06 V
DQ Ground
Supply
Supply
Supply
Supply
Supply
Supply
Supply
Power Supply: 1.2 V +/- 0.06 V
Ground
VSS
DRAM Activating Power Supply: 2.5V ( 2.375V min , 2.75V max)
Reference voltage for CA
VPP
VREFCA
ZQ
Reference Pin for ZQ calibration
NOTE Input only pins (BG0-BG1,BA0-BA1, A0-A17, ACT_n, RAS_n/A16, CAS_n/A15, WE_n/A14, CS_n, CKE, ODT, and RESET_n) do not supply termination.
- 8 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
5. DDR4 SDRAM Addressing
2 Gb Addressing Table
Configuration
# of Bank Groups
512 Mb x4
256 Mb x8
4
128 Mb x16
2
4
Bank Address
BG Address
BG0~BG1
BA0~BA1
A0~A14
A0~A9
BG0~BG1
BA0~BA1
A0~A13
A0~A9
1KB
BG0
Bank Address in a BG
BA0~BA1
A0~A13
A0~A9
2KB
Row Address
Column Address
Page size
512B
4 Gb Addressing Table
Configuration
1 Gb x4
4
512 Mb x8
4
256 Mb x16
2
# of Bank Groups
Bank Address
BG Address
BG0~BG1
BA0~BA1
A0~A15
A0~A9
512B
BG0~BG1
BA0~BA1
A0~A14
A0~A9
1KB
BG0
Bank Address in a BG
BA0~BA1
A0~A14
A0~A9
2KB
Row Address
Column Address
Page size
8 Gb Addressing Table
Configuration
2 Gb x4
4
1 Gb x8
4
512 Mb x16
2
# of Bank Groups
Bank Address
BG Address
BG0~BG1
BA0~BA1
A0~A16
A0~A9
512B
BG0~BG1
BA0~BA1
A0~A15
A0~A9
1KB
BG0
Bank Address in a BG
BA0~BA1
A0~A15
A0~A9
2KB
Row Address
Column Address
Page size
16 Gb Addressing Table
Configuration
4 Gb x4
4
2 Gb x8
4
1 Gb x16
2
# of Bank Groups
Bank Address
BG Address
BG0~BG1
BA0~BA1
A0~A17
A0~A9
512B
BG0~BG1
BA0~BA1
A0~A16
A0~A9
1KB
BG0
Bank Address in a BG
BA0~BA1
A0~A16
A0~A9
2KB
Row Address
Column Address
Page size
NOTE 1 : Page size is the number of bytes of data delivered from the array to the internal sense amplifiers when an ACTIVE command is registered.
Page size is per bank, calculated as follows:
page size = 2 COLBITS * ORG8
where, COLBITS = the number of column address bits, ORG = the number of I/O (DQ) bits
- 9 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
6. Absolute Maximum Ratings
6.1 Absolute Maximum DC Ratings
[ Table 4 ] Absolute Maximum DC Ratings
Symbol
Parameter
Voltage on VDD pin relative to Vss
Rating
Units
NOTE
VDD
-0.3 ~ 1.5
V
1,3
VDDQ
VPP
-0.3 ~ 1.5
-0.3 ~ 3.0
-0.3 ~ 1.5
-55 to +100
V
V
1,3
4
Voltage on VDDQ pin relative to Vss
Voltage on VPP pin relative to Vss
Voltage on any pin except VREFCA relative to Vss
Storage Temperature
V
V
V
1,3,5
1,2
IN, OUT
T
°C
STG
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300 mV of each other at all times;and VREFCA must be not greater than 0.6 x VDDQ, When VDD and VDDQ are less than 500 mV; VREFCA
may be equal to or less than 300 mV
4. VPP must be equal or greater than VDD/VDDQ at all times.
5. Overshoot area above 1.5 V is specified in section 8.3.4, 8.3.5 and section 8.3.6..
6.2 DRAM Component Operating Temperature Range
[ Table 5 ] Temperature Range
Symbol
Parameter
rating
0 to 95
Unit
C
NOTE
1, 2, 4
1, 3, 4
Normal
T
Operating Temperature Range
OPER
Industrial
-40 to 95
C
NOTE :
1. Operating Temperature TOPER is the case surface temperature on the center/top side of the DRAM.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-
tained between 0-85C under all operating conditions
3. The Industrial Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be main-
tained between -40-95C under all operating conditions
4. Some applications require operation of the Extended Temperature Range between 85C and 95C case temperature. Full specifications are guaranteed in this range, but the
following additional conditions apply:
a) Refresh commands must be doubled in frequency, therefore reducing the refresh interval tREFI to 3.9us.
b) If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to use the Manual Self-Refresh mode with Extended Temperature Range
capability (MR2 A6 = 0b and MR2 A7 = 1b).
7. AC & DC Operating Conditions
[ Table 6 ] Recommended DC Operating Conditions
Rating
Symbol
Parameter
Unit
NOTE
Min.
1.14
Typ.
1.2
Max.
1.26
1.26
2.75
VDD
VDDQ
VPP
Supply Voltage
V
V
V
1,2,3
1,2,3
3
Supply Voltage for Output
Peak-to-Peak Voltage
1.14
1.2
2.375
2.5
NOTE :
1. Under all conditions VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. DC bandwidth is limited to 20MHz.
- 10 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8. AC & DC Input Measurement Levels
8.1 AC & DC Logic input levels for single-ended signals
[ Table 7 ] Single-ended AC & DC input levels for Command and Address
DDR4-1600/1866/2133/2400
DDR4-2666
NOT
E
Symbol
Parameter
Unit
Min.
VREFCA+ 0.075
VSS
Max.
VDD
Min.
TBD
TBD
TBD
TBD
TBD
Max.
TBD
TBD
TBD
TBD
TBD
VIH.CA(DC75)
VIL.CA(DC75)
VIH.CA(AC100)
VIL.CA(AC100)
VREFCA(DC)
DC input logic high
DC input logic low
V
V
V
V
V
VREFCA-0.075
Note 2
AC input logic high
VREF + 0.1
Note 2
1
1
AC input logic low
VREF - 0.1
0.51*VDD
Reference Voltage for ADD, CMD inputs
0.49*VDD
2,3
NOTE :
1. See “Overshoot and Undershoot Specifications” .
2. The AC peak noise on VREFCA may not allow VREFCA to deviate from VREFCA(DC) by more than ± 1% VDD (for reference : approx. ± 12mV)
3. For reference : approx. VDD/2 ± 12mV
8.2 V
Tolerances
REF
The dc-tolerance limits and ac-noise limits for the reference voltages V
is illustrated in Figure 1. It shows a valid reference voltage V
(t) as a func-
REFCA
REF
tion of time. (V
stands for V
and V
likewise).
REFDQ
REF
REFCA
V
(DC) is the linear average of V
(t) over a very long period of time (e.g. 1 sec). This average has to meet the min/max requirement in Table 7 on
REF
REF
page 11. Furthermore V
(t) may temporarily deviate from V
(DC) by no more than ± 1% V
.
REF
REF
DD
voltage
VDD
VSS
time
Figure 1. Illustration of V
(DC) tolerance and VREF ac-noise limits
REF
The voltage levels for setup and hold time measurements V (AC), V (DC), V (AC) and V (DC) are dependent on V
.
IH
IH
IL
IL
REF
"V
" shall be understood as V
(DC), as defined in Figure 1 .
REF
REF
This clarifies, that dc-variations of V
affect the absolute voltage a signal has to reach to achieve a valid high or low level and therefore the time to
REF
which setup and hold is measured. System timing and voltage budgets need to account for V
data-eye of the input signals.
(DC) deviations from the optimum position within the
REF
This also clarifies that the DRAM setup/hold specification and derating values need to include time and voltage associated with V
ac-noise. Timing
REF
and voltage effects due to ac-noise on V
up to the specified limit (+/-1% of V ) are included in DRAM timings and their associated deratings.
DD
REF
- 11 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.3 AC & DC Logic Input Levels for Differential Signals
8.3.1 Differential signals definition
tDVAC
V
.DIFF.AC.MIN
IH
V
.DIFF.MIN
IH
0.0
half cycle
V .DIFF.MAX
IL
V .DIFF.AC.MAX
IL
tDVAC
time
Figure 2. Definition of differential ac-swing and "time above ac level" tDVAC
NOTE :
1. Differential signal rising edge from VIL.DIFF.MAX to VIH.DIFF.MIN must be monotonic slope.
2. Differential signal falling edge from VIH.DIFF.MIN to VIL.DIFF.MAX must be monotonic slope.
8.3.2 Differential swing requirement for clock (CK_t - CK_c)
[ Table 8 ] Differential AC & DC Input Levels
DDR4 -1600/1866/2133
DDR4 -2400/2666
Symbol
Parameter
unit NOTE
min
max
min
TBD
max
NOTE 3
TBD
V
differential input high
differential input low
+0.150
NOTE 3
NOTE 3
-0.150
V
V
V
V
1
1
2
2
IHdiff
V
NOTE 3
ILdiff
V
(AC)
(AC)
2 x (V (AC) - V
)
2 x (V (AC) - V
)
differential input high ac
differential input low ac
NOTE 3
NOTE 3
IHdiff
IH
REF
IH
REF
V
2 x (V (AC) - V
)
2 x (V (AC) - V
)
REF
NOTE 3
NOTE 3
ILdiff
NOTE:
1. Used to define a differential signal slew-rate.
2. for CK_t - CK_c use VIHCA/VILCA(AC) of ADD/CMD and VREFCA
IL
REF
IL
;
3. These values are not defined; however, the differential signals CK_t - CK_c, need to be within the respective limits (VIHCA(DC) max, VILCA(DC)min) for single-ended signals
as well as the limitations for overshoot and undershoot.
- 12 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 9 ] Allowed time before ringback (tDVAC) for CK_t - CK_c
tDVAC [ps] @ |V
(AC)| = 200mV
IH/Ldiff
Slew Rate [V/ns]
min
max
> 4.0
4.0
120
115
110
105
100
95
-
-
-
-
-
-
-
-
-
-
3.0
2.0
1.8
1.6
1.4
90
1.2
85
1.0
80
< 1.0
80
8.3.3 Single-ended requirements for differential signals
Each individual component of a differential signal (CK_t, CK_c) has also to comply with certain requirements for single-ended signals.
CK_t and CK _c have to approximately reach V
min / V
max [approximately equal to the ac-levels { V
(AC) / V
(AC)} for ADD/CMD signals]
IL.CA
SEH
SEL
IH.CA
in every half-cycle.
Note that the applicable ac-levels for ADD/CMD might be different per speed-bin etc. E.g. if Different value than V
ADD/CMD signals, then these ac-levels apply also for the single-ended signals CK_t and CK _c .
(AC100)/V
(AC100) is used for
IL.CA
IH.CA
VDD or VDDQ
VSEH min
VSEH
VDD/2 or VDDQ/2
CK
VSEL max
VSEL
VSS or VSSQ
time
Figure 3. Single-ended requirement for differential signals
Note that while ADD/CMD signal requirements are with respect to V
, the single-ended components of differential signals have a requirement with
REFCA
respect to V /2; this is nominally the same. The transition of single-ended signals through the ac-levels is used to measure setup time. For single-ended
DD
components of differential signals the requirement to reach V
characteristics of these signals.
max, V
min has no bearing on timing, but adds a restriction on the common mode
SEL
SEH
- 13 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 10 ] Single-ended levels for CK_t, CK_c
DDR4-1600/1866/2133
DDR4 -2400/2666
Symbol
Parameter
Unit NOTE
Min
Max
Min
Max
Single-ended high-level for
CK_t , CK_c
V
(VDD/2)+0.100
NOTE3
TBD
NOTE3
V
V
1, 2
1, 2
SEH
Single-ended low-level for
CK_t , CK_c
V
NOTE3
(VDD/2)-0.100
NOTE3
TBD
SEL
NOTE :
1. For CK_t - CK_c use VIH.CA/VIL.CA(AC) of ADD/CMD;
2. VIH(AC)/VIL(AC) for ADD/CMD is based on VREFCA
;
3. These values are not defined, however the single-ended signals CK_t - CK_c need to be within the respective limits (VIH.CA(DC) max, VIL.CA(DC)min) for single-ended sig-
nals as well as the limitations for overshoot and undershoot.
8.3.4 Address, Command and Control Overshoot and Undershoot specifications
[ Table 11 ] AC overshoot/undershoot specification for Address, Command and Control pins
Specification
Parameter
Unit
DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666
Maximum peak amplitude above VDD Absolute Max allowed for overshoot
area
0.06
0.24
0.06
0.24
0.06
0.24
0.06
0.24
TBD
TBD
V
V
Delta value between VDD Absolute Max and VDD Max allowed for overshoot
area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area per 1tCK Above Absolute Max
0.3
0.3
0.3
0.3
TBD
TBD
TBD
TBD
V-ns
V-ns
V-ns
V-ns
0.0083
0.2550
0.2644
0.0071
0.2185
0.2265
0.0062
0.1914
0.1984
0.0055
0.1699
0.1762
Maximum overshoot area per 1tCK Between Absolute Max and VDD Max
Maximum undershoot area per 1tCK Below VSS
(A0-A13,BG0-BG1,BA0-BA1,ACT_n,RAS_n,CAS_n/A15,WE_n/A14,CS_n,CKE,ODT,C2-C0)
Overshoot Area above VDD Absolute Max
Overshoot Area Between
VDD Absolute Max
VDD Absolute Max and VDD Max
VDD
VSS
Volts
(V)
1 tCK
Undershoot Area below VSS
Figure 4. Address, Command and Control Overshoot and Undershoot Definition
- 14 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.3.5 Clock Overshoot and Undershoot Specifications
[ Table 12 ] AC overshoot/undershoot specification for Clock
Specification
DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666
Parameter
Unit
Maximum peak amplitude above VDD Absolute Max allowed for overshoot
area
0.06
0.24
0.06
0.24
0.06
0.24
0.06
0.24
TBD
TBD
V
V
Delta value between VDD Absolute Max and VDD Max allowed for over-
shoot area
Maximum peak amplitude allowed for undershoot area
Maximum overshoot area per 1UI Above Absolute Max
Maximum overshoot area per 1UI Between Absolute Max and VDD Max
Maximum undershoot area per 1UI Below VSS
(CK_t, CK_c)
0.3
0.3
0.3
0.3
TBD
TBD
TBD
TBD
V
0.0038
0.1125
0.1144
0.0032
0.0964
0.0980
0.0028
0.0844
0.0858
0.0025
0.0750
0.0762
V-ns
V-ns
V-ns
Overshoot Area above VDD Absolute Max
Overshoot Area Between
VDD Absolute Max
VDD Absolute Max and VDD Max
VDD
Volts
(V)
1UI
VSS
Undershoot Area below VSS
Figure 5. Clock Overshoot and Undershoot Definition
- 15 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.3.6 Data, Strobe and Mask Overshoot and Undershoot Specifications
[ Table 13 ] AC overshoot/undershoot specification for Data, Strobe and Mask
Specification
DDR4-1600 DDR4-1866 DDR4-2133 DDR4-2400 DDR4-2666
Parameter
Unit
Maximum peak amplitude above Max absolute level of Vin, Vout
Overshoot area Between Max Absolute level of Vin, Vout and VDDQ Max
Undershoot area Between Min absolute level of Vin, Vout and VSSQ
Maximum peak amplitude below Min absolute level of Vin, Vout
Maximum overshoot area per 1UI Above Max absolute level of Vin, Vout
0.16
0.24
0.16
0.24
0.16
0.24
0.16
0.24
TBD
TBD
TBD
TBD
TBD
V
V
0.30
0.30
0.30
0.30
V
0.10
0.10
0.10
0.10
V
0.0150
0.0129
0.0113
0.0100
V-ns
Maximum overshoot area per 1UI Between Max absolute level of Vin,Vout and
VDDQ Max
0.1050
0.0900
0.0788
0.0700
TBD
V-ns
Maximum undershoot area per 1UI Between Min absolute level of Vin,Vout and
VSSQ
0.1050
0.0150
0.0900
0.0129
0.0788
0.0113
0.0700
0.0100
TBD
TBD
V-ns
V-ns
Maximum undershoot area per 1UI Below Min absolute level of Vin,Vout
(DQ, DQS_t, DQS_c, DM_n, DBI_n, TDQS_t, TDQS_c)
Overshoot area above Max absolute level of Vin,Vout
Max absolute level of Vin, Vout
VDDQ
Overshoot Area Between
Max absolute level of Vin,Vout and VDDQ Max
Volts
(V)
1UI
VSSQ
Undershoot area between
Min absolute level of Vin,Vout and VSSQ
Min absolute level of Vin, Vout
Undershoot area below Min absolute level of Vin,Vout
Figure 6. Data, Strobe and Mask Overshoot and Undershoot Definition
- 16 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.4 Slew Rate Definitions
8.4.1 Slew Rate Definitions for Differential Input Signals (CK)
Input slew rate for differential signals (CK_t, CK_c) are defined and measured as shown in Table 14 and Figure 7.
[ Table 14 ] Differential input slew rate definition
Measured
Defined by
Description
From
To
V
V
V
V
V
V
Differential input slew rate for rising edge(CK_t - CK_c)
Differential input slew rate for falling edge(CK_t - CK_c)
DeltaTRdiff
ILdiffmax
IHdiffmin
IHdiffmin - ILdiffmax
V
V
DeltaTFdiff
IHdiffmin
ILdiffmax
IHdiffmin - ILdiffmax
NOTE :
The differential signal (i.e. CK - CK and DQS - DQS) must be linear between these thresholds.
Delta TRdiff
V
IHdiffmin
0
V
ILdiffmax
Delta TFdiff
Figure 7. Differential Input Slew Rate definition for CK, CK
- 17 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.4.2 Slew Rate Definition for Single-ended Input Signals ( CMD/ADD )
Delta TRsingle
V
V
IHCA(AC) Min
IHCA(DC) Min
VREFCA(DC)
V
ILCA(DC) Max
V
ILCA(AC) Max
Delta TFsingle
NOTE :
1. Single-ended input slew rate for rising edge = { VIHCA(AC)Min - VILCA(DC)Max } / Delta TR single
2. Single-ended input slew rate for falling edge = { VIHCA(DC)Min - VILCA(AC)Max } / Delta TF single
3. Single-ended signal rising edge from VILCA(DC)Max to VIHCA(DC)Min must be monotonic slope.
4. Single-ended signal falling edge from VIHCA(DC)Min to VILCA(DC)Max must be monotonic slope.
Figure 8. Single-ended Input Slew Rate definition for CMD and ADD
- 18 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.5 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to clock, each cross point voltage of differential input signals
(CK_t, CK_c) must meet the requirements in Table. The differential input cross point voltage VIX is measured from the actual cross point of true and
complement signals to the midlevel between of VDD and VSS.
VDD
CK_t
Vix
VDD/2
Vix
CK_c
VSEL
VSEH
VSS
Figure 9. Vix Definition (CK)
[ Table 15 ] Cross point voltage for differential input signals (CK)
DDR4-1600/1866/2133
Symbol
Parameter
min
VDD/2 - 145mV =<
VSEL =< VDD/2 - =< VSEH =< VDD/
100mV 2 + 145mV
-(VDD/2 - VSEL) + (VSEH - VDD/2) -
max
VDD/2 + 100mV
VSEL =< VDD/2 -
145mV
VDD/2 + 145mV
=< VSEH
-
Area of VSEH, VSEL
Differential Input Cross Point Voltage relative to
VDD/2 for CK_t, CK_c
VlX(CK)
-120mV
120mV
25mV
25mV
DDR4-2400/2666
Symbol
Parameter
min
max
-
Area of VSEH, VSEL
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Differential Input Cross Point Voltage relative to
VDD/2 for CK_t, CK_c
VlX(CK)
- 19 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.6 CMOS rail to rail Input Levels
8.6.1 CMOS rail to rail Input Levels for RESET_n
[ Table 16 ] CMOS rail to rail Input Levels for RESET_n
Parameter
Symbol
Min
0.8*VDD
0.7*VDD
VSS
Max
VDD
Unit
V
NOTE
AC Input High Voltage
DC Input High Voltage
DC Input Low Voltage
AC Input Low Voltage
Rising time
VIH(AC)_RESET
VIH(DC)_RESET
VIL(DC)_RESET
VIL(AC)_RESET
TR_RESET
6
2
VDD
V
0.3*VDD
0.2*VDD
1.0
V
1
VSS
V
7
-
us
us
4
RESET pulse width
tPW_RESET
1.0
-
3,5
NOTE :
1.After RESET_n is registered LOW, RESET_n level shall be maintained below VIL(DC)_RESET during tPW_RESET, otherwise, SDRAM may not be reset.
2. Once RESET_n is registered HIGH, RESET_n level must be maintained above VIH(DC)_RESET, otherwise, SDRAM operation will not be guaranteed until it is reset
asserting RESET_n signal LOW.
3. RESET is destructive to data contents.
4. No slope reversal(ringback) requirement during its level transition from Low to High.
5. This definition is applied only “Reset Procedure at Power Stable”.
6. Overshoot might occur. It should be limited by the Absolute Maximum DC Ratings.
7. Undershoot might occur. It should be limited by Absolute Maximum DC Ratings
tPW_RESET
0.8*VDD
0.7*VDD
0.3*VDD
0.2*VDD
TR_RESET
Figure 10. RESET_n Input Slew Rate Definition
- 20 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
8.7 AC and DC Logic Input Levels for DQS Signals
8.7.1 Differential signal definition
Figure 11. Definition of differential DQS Signal AC-swing Level
8.7.2 Differential swing requirements for DQS (DQS_t - DQS_c)
[ Table 17 ] Differential AC and DC Input Levels for DQS
DDR4-1600/1866/2133
DDR4-2400
DDR4-2666
Symbol
Parameter
Unit
Note
Min
186
Max
Note2
-186
Min
Max
Note2
-160
Min
Max
TBD
TBD
VIHDiffPeak
VILDiffPeak
VIH.DIFF.Peak Voltage
VIL.DIFF.Peak Voltage
160
TBD
TBD
mV
mV
1
1
Note2
Note2
NOTE :
1.Used to define a differential signal slew-rate.
2.These values are not defined; however, the differential signals DQS_t - DQS_c, need to be within the respective limits Overshoot, Undershoot Specification for single-ended
signals.
8.7.3 Peak voltage calculation method
The peak voltage of Differential DQS signals are calculated in a following equation.
VIH.DIFF.Peak Voltage = Max(f(t))
VIL.DIFF.Peak Voltage = Min(f(t))
f(t) = VDQS_t - VDQS_c
- 21 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Figure 12. Definition of differential DQS Peak Voltage
8.7.4 Differential Input Cross Point Voltage
To guarantee tight setup and hold times as well as output skew parameters with respect to strobe, the cross point voltage of differential input signals
(DQS_t, DQS_c) must meet the requirements in Table 18. The differential input cross point voltage VIX is measured from the actual cross point of true
and complement signals to the mid level that is VrefDQ.Vix Definition (DQS)
Figure 13. Vix Definition (DQS)
- 22 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 18 ] Cross point voltage for differential input signals (DQS)
DDR4-1600/1866/2133/2400
DDR4-2666
Symbol
Parameter
Unit
Note
Min
Max
Min
Max
DQS Differential input crosspoint
voltage ratio
Vix_DQS_ratio
-
25
TBD
TBD
%
1, 2, 3
NOTE :
1. The base level of Vix_DQS_FR/RF is VrefDQ that is DDR4 SDRAM internal setting value by Vref Training.
2. Vix_DQS_FR is defined by this equation : Vix_DQS_FR = |Min(f(t)) x Vix_DQS_Ratio|
3. Vix_DQS_RF is defined by this equation : Vix_DQS_RF = Max(f(t)) x Vix_DQS_Ratio
8.7.5 Differential Input Slew Rate Definition
Input slew rate for differential signals (DQS_t, DQS_c) are defined and measured as shown in are Figure 11 and Figure 12.
NOTE :
1. Differential signal rising edge from VILDiff_DQS to VIHDiff_DQS must be monotonic slope.
2. Differential signal falling edge from VIHDiff_DQS to VILDiff_DQS must be monotonic slope.
Figure 14. Differential Input Slew Rate Definition for DQS_t, DQS_c
[ Table 19 ] Differential Input Slew Rate Definition for DQS_t, DQS_c
Description
Defined by
From
To
Differential input slew rate for rising edge(DQS_t - DQS_c)
Differential input slew rate for falling edge(DQS_t - DQS_c)
VILDiff_DQS
VIHDiff_DQS
|VILDiff_DQS - VIHDiff_DQS|/DeltaTRdiff
|VILDiff_DQS - VIHDiff_DQS|/DeltaTFdiff
VIHDiff_DQS
VILDiff_DQS
[ Table 20 ] Differential Input Level for DQS_t, DQS_c
DDR4-1600/1866/2133
DDR4-2400
DDR4-2666
Symbol
Parameter
Unit NOTE
Min
136
-
Max
-
Min
Max
-
Min
TBD
TBD
Max
TBD
TBD
VIHDiff_DQS
VILDiff_DQS
Differntial Input High
Differntial Input Low
130
-
mV
mV
-136
-130
[ Table 21 ] Differential Input Slew Rate for DQS_t, DQS_c
DDR4-1600/1866/2133/2400
DDR4-2666
Symbol
Parameter
Unit NOTE
Min
Max
Min
Max
TBD
SRIdiff
Differential Intput Slew Rate
3
18
TBD
V/ns
- 23 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
9. AC and DC output Measurement levels
9.1 Output Driver DC Electrical Characteristics
The DDR4 driver supports two different Ron values. These Ron values are referred as strong(low Ron) and weak mode(high Ron). A functional
representation of the output buffer is shown in the figure below. Output driver impedance RON is defined as follows:
The individual pull-up and pull-down resistors (RON and RON ) are defined as follows:
Pu
Pd
VDDQ -Vout
I out
under the condition that RONPd is off
under the condition that RONPu is off
RON
=
=
Pu
Pd
Vout
I out
RON
Chip In Drive Mode
Output Drive
VDDQ
To
IPu
other
circuity
like
RON
Pu
Pd
RCV, ...
DQ
RON
IPd
Iout
Vout
VSSQ
Figure 15. Output driver
- 24 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 22 ] Output Driver DC Electrical Characteristics, assuming RZQ=240ohm; entire operating temperature range;
after proper ZQ calibration
RON
Resistor
Vout
Min
0.8
0.9
0.9
0.9
0.9
0.8
0.8
0.9
0.9
0.9
0.9
0.8
Nom
1
Max
1.1
Unit
NOTE
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
1,2
NOM
VOLdc= 0.5*VDDQ
VOMdc= 0.8* VDDQ
VOHdc= 1.1* VDDQ
VOLdc= 0.5* VDDQ
VOMdc= 0.8* VDDQ
VOHdc= 1.1* VDDQ
VOLdc= 0.5*VDDQ
VOMdc= 0.8* VDDQ
VOHdc= 1.1* VDDQ
VOLdc= 0.5* VDDQ
VOMdc= 0.8* VDDQ
VOHdc= 1.1* VDDQ
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/7
RZQ/5
RZQ/5
RZQ/5
RZQ/5
RZQ/5
RZQ/5
RON34Pd
1
1.1
1
1.25
1.25
1.1
34
1
RON34Pu
RON48Pd
RON48Pu
1
1
1.1
1
1.1
1
1.1
1
1.25
1.25
1.1
48
1
1
1
1.1
Mismatch between pull-up and
pull-down, MMPuPd
VOMdc= 0.8* VDDQ
VOMdc= 0.8* VDDQ
VOMdc= 0.8* VDDQ
-10
-
-
-
10
10
10
%
%
%
1,2,3,4
1,2,4
Mismatch DQ-DQ within byte vari-
ation pull-up, MMPudd
-
-
Mismatch DQ-DQ within byte vari-
ation pull-dn, MMPddd
1,2,4
NOTE :
1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage changes after cal-
ibration, see following section on voltage and temperature sensitivity(TBD).
2. Pull-up and pull-dn output driver impedances are recommended to be calibrated at 0.8 * VDDQ. Other calibration schemes may be used to achieve the linearity spec
shown above, e.g. calibration at 0.5 * VDDQ and 1.1 * VDDQ.
3. Measurement definition for mismatch between pull-up and pull-down, MMPuPd : Measure RONPu and RONPD both at 0.8*VDD separately; Ronnom is the nominal Ron
value
RONPu -RONPd
*100
MMPuPd =
RONNOM
4. RON variance range ratio to RON Nominal value in a given component, including DQS_t and DQS_c.
RONPuMax -RONPuMin
*100
*100
MMPudd =
RONNOM
RONPdMax -RONPdMin
MMPddd =
RONNOM
5. This parameter of x16 device is specified for Uper byte and Lower byte.
- 25 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
9.1.1 Alert_n output Drive Characteristic
A functional representation of the output buffer is shown in the figure below. Output driver impedance RON is defined as follows:
Vout
RON
=
Pd
l Iout l
under the condition that RON is off
Pu
Alert Driver
DRAM
Alert
RON
Pd
Iout
Vout
IPd
VSSQ
Resistor
Vout
VOLdc= 0.1* VDDQ
Min
0.3
0.4
Max
1.2
Unit
34Ω
34Ω
NOTE
1
1
V
= 0.8* VDDQ
= 1.1* VDDQ
RON
1.2
OMdc
Pd
V
0.4
1.4
34Ω
1
OHdc
NOTE :
1. VDDQ voltage is at VDDQ DC. VDDQ DC definition is TBD.
9.1.2 Output Driver Characteristic of Connectivity Test ( CT ) Mode
Following Output driver impedance RON will be applied Test Output Pin during Connectivity Test ( CT ) Mode.
The individual pull-up and pull-down resistors (RONPu_CT and RONPd_CT) are defined as follows:
V
-V
DDQ OUT
RON
RON
=
=
Pu_CT
Pd_CT
l Iout l
V
OUT
l Iout l
Chip In Driver Mode
Output Driver
VDDQ
IPu_CT
RON
To
other
circuity
like
Pu_CT
DQ
RCV,...
Iout
RON
Pd_CT
Vout
IPd_CT
VSSQ
Figure 16. Output Driver
- 26 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
RON
Resistor
Vout
Max
1.9
2.0
2.2
2.5
2.5
2.2
2.0
1.9
Units
34
34
34
34
34
34
34
34
NOTE
NOM_CT
VOB = 0.2 x V
1
1
1
1
1
1
1
1
dc
DDQ
VOL = 0.5 x V
dc
DDQ
RON
Pd_CT
Pu_CT
VOM = 0.8 x V
dc
DDQ
DDQ
DDQ
VOH = 1.1 x V
dc
34
VOB = 0.2 x V
dc
VOL = 0.5 x V
dc
DDQ
RON
VOM = 0.8 x V
dc
DDQ
VOH = 1.1 x V
dc
DDQ
NOTE :
1. Connectivity test mode uses un-calibrated drivers, showing the full range over PVT. No mismatch between pull up and pull down is defined.
9.2 Single-ended AC & DC Output Levels
[ Table 23 ] Single-ended AC & DC output levels
Symbol
Parameter
DDR4-1600/1866/2133/2400/2666
Units NOTE
V
(DC)
(DC)
DC output high measurement level (for IV curve linearity)
1.1 x V
0.8 x V
0.5 x V
V
OH
DDQ
DDQ
DDQ
V
V
V
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
AC output high measurement level (for output SR)
AC output low measurement level (for output SR)
V
V
OM
(DC)
OL
(AC)
(AC)
(0.7 + 0.15) x V
V
V
1
1
OH
DDQ
V
(0.7 - 0.15) x V
OL
DDQ
NOTE :
1. The swing of ± 0.15 × VDDQ is based on approximately 50% of the static single-ended output peak-to-peak swing with a driver impedance of RZQ/7Ω and an effective test
load of 50Ω to VTT = VDDQ
.
9.3 Differential AC & DC Output Levels
[ Table 24 ] Differential AC & DC output levels
Symbol
(AC)
Parameter
DDR4-1600/1866/2133/2400/2666
Units
NOTE
V
AC differential output high measurement level (for output SR)
+0.3 x V
V
1
OHdiff
DDQ
V
(AC)
AC differential output low measurement level (for output SR)
-0.3 x V
V
1
OLdiff
DDQ
NOTE :
1. The swing of ± 0.3 × VDDQ is based on approximately 50% of the static differential output peak-to-peak swing with a driver impedance of RZQ/7Ω and an effective test load
of 50Ω to VTT = VDDQ at each of the differential outputs.
- 27 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
9.4 Single-ended Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between V
single ended signals as shown in Table 25 and Figure 17.
and V
for
OL(AC)
OH(AC)
[ Table 25 ] Single-ended output slew rate definition
Measured
Description
Defined by
[V (AC)-V (AC)] / Delta TRse
From
(AC)
To
(AC)
V
V
V
Single ended output slew rate for rising edge
Single ended output slew rate for falling edge
NOTE :
OL
OH
OH
OL
(AC)
V
(AC)
[V (AC)-V (AC)] / Delta TFse
OH OL
OH
OL
1. Output slew rate is verified by design and characterization, and may not be subject to production test.
VOH(AC)
VTT
VOL(AC)
delta TFse
delta TRse
Figure 17. Single-ended Output Slew Rate Definition
[ Table 26 ] Single-ended output slew rate
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
Parameter
Symbol
Units
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
TBD
Single ended output slew rate
Description: SR: Slew Rate
SRQse
4
9
4
9
4
9
4
9
TBD
V/ns
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
se: Single-ended Signals
For Ron = RZQ/7 setting
NOTE :
1. In two cases, a maximum slew rate of 12 V/ns applies for a single DQ signal within a byte lane.
-Case 1 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high) while all remaining DQ signals in the
same byte lane are static (i.e. they stay at either high or low).
-Case 2 is defined for a single DQ signal within a byte lane which is switching into a certain direction (either from high to low or low to high) while all remaining DQ signals in the
same byte lane are switching into the opposite direction (i.e. from low to high or high to low respectively). For the remaining DQ signal switching into the opposite direction, the
regular maximum limit of 9 V/ns applies
- 28 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
9.5 Differential Output Slew Rate
With the reference load for timing measurements, output slew rate for falling and rising edges is defined and measured between VOLdiff(AC) and
VOHdiff(AC) for differential signals as shown in Table 27 and Figure 18.
[ Table 27 ] Differential output slew rate definition
Measured
Description
Defined by
(AC)-V (AC)] / Delta TRdiff
From
(AC)
To
(AC)
V
V
V
[V
OHdiff
Differential output slew rate for rising edge
Differential output slew rate for falling edge
NOTE :
OLdiff
OHdiff
OLdiff
(AC)
V
(AC)
[V
(AC)-V
(AC)] /Delta TFdiff
OLdiff
OHdiff
OLdiff
OHdiff
1. Output slew rate is verified by design and characterization, and may not be subject to production test.
VOHdiff(AC)
VTT
OLdiff(AC)
V
delta TFdiff
delta TRdiff
Figure 18. Differential Output Slew Rate Definition
[ Table 28 ] Differential output slew rate
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
Parameter
Symbol
SRQdiff
Units
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Differential output slew rate
8
18
8
18
8
18
8
18
TBD
TBD
V/ns
Description:
SR: Slew Rate
Q: Query Output (like in DQ, which stands for Data-in, Query-Output)
diff: Differential Signals
For Ron = RZQ/7 setting
- 29 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
9.6 Single-ended AC & DC Output Levels of Connectivity Test Mode
Following output parameters will be applied for DDR4 SDRAM Output Signal during Connectivity Test Mode.
[ Table 29 ] Single-ended AC & DC output levels of Connectivity Test Mode
Symbol
Parameter
DDR4-1600/1866/2133 /2400/2666
1.1 x VDDQ
Unit
V
Notes
V
V
V
V
V
V
DC output high measurement level (for IV curve linearity)
DC output mid measurement level (for IV curve linearity)
DC output low measurement level (for IV curve linearity)
DC output below measurement level (for IV curve linearity)
AC output high measurement level (for output SR)
AC output below measurement level (for output SR)
OH(DC)
0.8 x VDDQ
V
OM(DC)
OL(DC)
OB(DC)
OH(AC)
OL(AC)
0.5 x VDDQ
V
0.2 x VDDQ
V
VTT + (0.1 x VDDQ)
VTT - (0.1 x VDDQ)
V
1
1
V
NOTE
1. The effective test load is 50Ω terminated by VTT = 0.5 * VDDQ.
VOH(AC)
VTT
0.5 * VDDQ
VOL(AC)
TR_output_CT
TR_output_CT
Figure 19. Output Slew Rate Definition of Connectivity Test Mode
[ Table 30 ] Single-ended output slew rate of Connectivity Test Mode
DDR4-1600/1866/2133/2400/2666
Parameter
Symbol
Unit
Notes
Min
Max
10
Output signal Falling time
Output signal Rising time
TF_output_CT
TR_output_CT
-
-
ns/V
ns/V
10
9.7 Test Load for Connectivity Test Mode Timing
The reference load for ODT timings is defined in Figure 18.
V
DDQ
DQ, DM
DQSL , DQSL
DQSU , DQSU
DQS , DQS
CT_INPUTS
DUT
0.5*VDDQ
Rterm = 50 ohm
V
SSQ
Timing Reference Points
Figure 20. Connectivity Test Mode Timing Reference Load
- 30 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
10. Speed Bin
[ Table 31 ] DDR4-1600 Speed Bins and Operations
Speed Bin
CL-nRCD-nRP
Parameter
DDR4-1600
11-11-11
Unit
NOTE
Symbol
tAA
min
max
12
13.75
Internal read command to first data
Internal read command to first data with read DBI enabled
ACT to internal read or write delay time
18.00
ns
ns
ns
11
11
11
5,10
(13.50)
tAA_DBI
tRCD
tAA(min) + 2nCK
tAA(max) +2nCK
-
12
13.75
5,10
(13.50)
12
13.75
PRE command period
ACT to PRE command period
ACT to ACT or REF command period
tRP
tRAS
tRC
-
ns
ns
ns
11
11
11
5,10
(13.50)
35
9 x tREFI
-
48.75
5,10
(48.50)
Normal
CL = 9
Read DBI
CL = 11
1.5
tCK(AVG)
1.6
ns
1,2,3,4,10,13
5,10
CWL = 9
(Optional)
CL = 10
CL = 10
CL = 11
CL = 12
CL = 12
CL = 12
CL = 13
CL = 14
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
Reserved
ns
ns
1,2,3,4,10
1,2,3,4
1,2,3,4
1,2,3
Reserved
CWL = 9,11
1.25
1.25
<1.5
<1.5
ns
ns
Supported CL Settings
9,11,12
11,13,14
9,11
nCK
nCK
nCK
12,13
13
Supported CL Settings with read DBI
Supported CWL Settings
- 31 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 32 ] DDR4-1866 Speed Bins and Operations
Speed Bin
CL-nRCD-nRP
Parameter
DDR4-1866
13-13-13
Unit
NOTE
Symbol
tAA
min
max
12
13.92
Internal read command to first data
Internal read command to first data with read DBI enabled
ACT to internal read or write delay time
18.00
ns
ns
ns
11
11
11
5,10
(13.50)
tAA_DBI
tRCD
tAA(min) + 2nCK
tAA(max) +2nCK
-
12
13.92
5,10
(13.50)
12
13.92
PRE command period
ACT to PRE command period
ACT to ACT or REF command period
tRP
tRAS
tRC
-
ns
ns
ns
11
11
11
5,10
(13.50)
34
9 x tREFI
-
47.92
5,10
(47.50)
Normal
CL = 9
Read DBI
CL = 11
1.5
tCK(AVG)
1.6
ns
1,2,3,4,10,13
5,10
CWL = 9
CWL = 9,11
CWL = 10,12
(Optional)
CL = 10
CL = 10
CL = 12
CL = 12
tCK(AVG)
tCK(AVG)
Reserved
Reserved
ns
ns
1,2,3,4,10
4
1.25
1.25
<1.5
<1.5
CL = 11
CL = 13
tCK(AVG)
ns
1,2,3,4,6
5,10
(Optional)
CL = 12
CL = 12
CL = 13
CL = 14
CL = 14
CL = 14
CL = 15
CL = 16
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
ns
ns
1,2,3,6
1,2,3,4
1,2,3,4
1,2,3
Reserved
1.071
1.071
<1.25
<1.25
ns
ns
Supported CL Settings
9,11,12,13,14
11,13,14,15,16
9,10,11,12
nCK
nCK
nCK
12,13
13
Supported CL Settings with read DBI
Supported CWL Settings
- 32 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 33 ] DDR4-2133 Speed Bins and Operations
Speed Bin
CL-nRCD-nRP
Parameter
DDR4-2133
15-15-15
Unit
NOTE
Symbol
min
max
12
14.06
Internal read command to first data
tAA
18.00
ns
ns
ns
11
11
11
5,10
(13.75)
Internal read command to first data with read DBI
enabled
tAA_DBI
tRCD
tAA(min) + 3nCK
14.06
tAA(max) + 3nCK
-
ACT to internal read or write delay time
5,10
(13.75)
14.06
PRE command period
ACT to PRE command period
ACT to ACT or REF command period
tRP
tRAS
tRC
-
ns
ns
ns
11
11
11
5,10
(13.75)
33
9 x tREFI
-
47.06
5,10
(46.75)
Normal
CL = 9
Read DBI
CL = 11
CL = 12
CL = 13
CL = 14
CL = 15
1.5
1,2,3,4,10,1
2
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
1.6
ns
ns
ns
ns
ns
5,10
CWL = 9
(Optional)
CL = 10
CL = 11
CL = 12
CL = 13
Reserved
1,2,3,10
1,2,3,4,7
1,2,3,7
1.25
<1.5
5,10
CWL = 9,11
CWL = 10,12
CWL = 11,14
(Optional)
1.25
<1.5
1.071
<1.25
1,2,3,4,7
5,10
(Optional)
CL = 14
CL = 14
CL = 15
CL = 16
CL = 16
CL = 17
CL = 18
CL = 19
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
1.071
<1.25
ns
ns
1,2,3,7
1,2,3,4
1,2,3,4
1,2,3
Reserved
0.937
0.937
<1.071
<1.071
ns
ns
Supported CL Settings
Supported CL Settings with read DBI
Supported CWL Settings
9,11.12,13,14,15,16
11,13,14,15,16,18,19
9,10,11,12,14
nCK
nCK
nCK
12,13
- 33 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 34 ] DDR4-2400 Speed Bins and Operations
Speed Bin
CL-nRCD-nRP
Parameter
DDR4-2400
17-17-17
Unit
NOTE
Symbol
min
max
14.16
Internal read command to first data
tAA
18.00
ns
ns
ns
11
11
11
5,10
(13.75)
tAA(min) + 3nCK
14.16
Internal read command to first data with read DBI
enabled
tAA_DBI
tRCD
tAA(max) + 3nCK
-
ACT to internal read or write delay time
5,10
(13.75)
14.16
PRE command period
ACT to PRE command period
ACT to ACT or REF command period
tRP
tRAS
tRC
-
ns
ns
ns
11
11
11
5,10
(13.75)
32
9 x tREFI
-
46.16
5,10
(45.75)
Normal
CL = 9
Read DBI
CL = 11
CL = 12
CL = 12
tCK(AVG)
tCK(AVG)
tCK(AVG)
Reserved
Reserved
ns
ns
ns
1,2,3,4,10
1,2,3,4,10
4
CWL = 9
CL = 10
CL = 10
1.5
1.6
1.25
<1.5
CWL = 9,11
CL = 11
CL = 13
tCK(AVG)
ns
1,2,3,4,8
5,10
(Optional)
CL = 12
CL = 12
CL = 14
CL = 14
tCK(AVG)
tCK(AVG)
1.25
<1.5
ns
ns
ns
1,2,3,8
4
Reserved
1.071
<1.25
1,2,3,4,8
CWL = 10,12
CWL = 11,14
CWL = 12,16
CL = 13
CL = 15
tCK(AVG)
5,10
(Optional)
CL = 14
CL = 14
CL = 16
CL = 17
tCK(AVG)
tCK(AVG)
1.071
0.938
<1.25
ns
ns
ns
1,2,3,8
4
Reserved
<1.071
1,2,3,4,8
CL = 15
CL = 18
tCK(AVG)
5,10
(Optional)
CL = 16
CL = 15
CL = 16
CL = 17
CL = 18
CL = 19
CL = 18
CL = 19
CL = 20
CL = 21
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
0.938
<1.071
ns
ns
ns
1,2,3,8
1,2,3,4
1,2,3,4
Reserved
Reserved
0.833
0.833
<0.937
<0.937
ns
1,2,3
12
Supported CL Settings
Supported CL Settings with read DBI
Supported CWL Settings
10,11,12,13,14,15,16,17,18
12,13,14,15,16,18,19,20,21
9,10,11,12,14,16
nCK
nCK
nCK
- 34 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 35 ] DDR4-2666 Speed Bins and Operations
Speed Bin
CL-nRCD-nRP
Parameter
DDR4-2666
19-19-19
Unit
NOTE
Symbol
min
max
13
14.25
Internal read command to first data
tAA
18.00
ns
ns
ns
11
11
11
5,11
(13.75)
Internal read command to first data with read DBI
enabled
tAA_DBI
tRCD
tAA(min) + 3nCK
14.25
tAA(max) + 3nCK
-
ACT to internal read or write delay time
5,11
(13.75)
13
14.25
PRE command period
ACT to PRE command period
ACT to ACT or REF command period
tRP
tRAS
tRC
-
ns
ns
ns
11
11
11
5,11
(13.75)
32
9 x tREFI
-
46.25
5,11
(45.75)
Normal
CL = 9
Read DBI
CL = 11
CL = 12
CL = 12
tCK(AVG)
tCK(AVG)
tCK(AVG)
Reserved
Reserved
ns
ns
ns
1,2,3,4,11
1,2,3,11
4
CWL = 9
CL = 10
CL = 10
1.5
1.6
1.25
<1.5
CWL = 9,11
CL = 11
CL = 13
tCK(AVG)
ns
1,2,3,4,9
5,11
(Optional)
CL = 12
CL = 12
CL = 14
CL = 14
tCK(AVG)
tCK(AVG)
1.25
<1.5
ns
ns
1,2,3,9
4
Reserved
1.071
<1.25
CWL = 10,12
CWL = 11,14
CL = 13
CL = 15
tCK(AVG)
ns
1,2,3,4,9
5,11
(Optional)
CL = 14
CL = 14
CL = 16
CL = 17
tCK(AVG)
tCK(AVG)
1.071
0.937
<1.25
ns
ns
1,2,3,9
4
Reserved
<1.071
CL = 15
CL = 18
tCK(AVG)
ns
1,2,3,4,9
5,11
(Optional)
CL = 16
CL = 15
CL = 16
CL = 19
CL = 18
CL = 19
tCK(AVG)
tCK(AVG)
tCK(AVG)
0.937
<1.071
ns
ns
ns
1,2,3,9
4
Reserved
Reserved
1,2,3,4S9
1,2,3,4S9
1,2,3,4S9
1,2,3
0.833
0.833
<0.937
<0.937
CWL = 12,16
CWL = 14.18
CL = 17
CL = 20
tCK(AVG)
ns
5,11
(Optional)
CL = 18
CL = 17
CL = 18
CL = 19
CL = 20
CL = 21
CL = 20
CL = 21
CL = 22
CL = 23
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
tCK(AVG)
ns
ns
Reserved
Reserved
1,2,3S4
1,2,3S4
1,2,3S4
1,2,3
ns
0.75
0.75
<0.833
<0.833
ns
ns
Supported CL Settings
Supported CL Settings with read DBI
Supported CWL Settings
10,11,12,13,14,15,16,17,18,19,20
12,13,14,15,17,18,19,20,21,22,23
9,10,11,12,14,16,18
nCK
nCK
nCK
12
- 35 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
10.1 Speed Bin Table Note
Absolute Specification
- VDDQ = VDD = 1.20V +/- 0.06 V
- VPP = 2.5V +0.25/-0.125 V
- The values defined with above-mentioned table are DLL ON case.
- DDR4-1600, 1866, 2133S2400Gand 2666 Speed Bin Tables are valid only when Geardown Mode is disabled.
1. The CL setting and CWL setting result in tCK(avg).MIN and tCK(avg).MAX requirements. When making a selection of tCK(avg), both need to be fulfilled: Requirements from
CL setting as well as requirements from CWL setting.
2. tCK(avg).MIN limits: Since CAS Latency is not purely analog - data and strobe output are synchronized by the DLL - all possible intermediate frequencies may not be
guaranteed. An application should use the next smaller JEDEC standard tCK(avg) value (1.5, 1.25, 1.071, 0.938 or 0.833 ns) when calculating CL [nCK] = tAA [ns] /
tCK(avg) [ns], rounding up to the next ‘Supported CL’, where tAA = 12.5ns and tCK(avg) = 1.3 ns should only be used for CL = 10 calculation.
3. tCK(avg).MAX limits: Calculate tCK(avg) = tAA.MAX / CL SELECTED and round the resulting tCK(avg) down to the next valid speed bin (i.e. 1.5ns or 1.25ns or 1.071 ns or
0.938 ns or 0.833 ns). This result is tCK(avg).MAX corresponding to CL SELECTED.
4. ‘Reserved’ settings are not allowed. User must program a different value.
5. 'Optional' settings allow certain devices in the industry to support this setting, however, it is not a mandatory feature. Refer to supplier's data sheet and/or the DIMM SPD
information if and how this setting is supported.
6. Any DDR4-1866 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/
Characterization.
7. Any DDR4-2133 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/
Characterization.
8. Any DDR4-2400 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/
Characterization.
9. Any DDR4-2666 speed bin also supports functional operation at lower frequencies as shown in the table which are not subject to Production Tests but verified by Design/
Characterization.
10 DDR4-1600 AC timing apply if DRAM operates at lower than 1600 MT/s data rate.
11. Parameters apply from tCK(avg)min to tCK(avg)max at all standard JEDEC clock period values as stated in the Speed Bin Tables.
12. CL number in parentheses, it means that these numbers are optional.
13. DDR4 SDRAM supports CL=9 as long as a system meets tAA(min).
14. Each speed bin lists the timing requirements that need to be supported in order for a given DRAM to be JEDEC compliant. JEDEC compliance does not require support for
all speed bins within a given speed. JEDEC compliance requires meeting the parameters for a least one of the listed speed bins.
- 36 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
11. IDD and IDDQ Specification Parameters and Test condi-
tions
11.1 IDD, IPP and IDDQ Measurement Conditions
In this chapter, IDD, IPP and IDDQ measurement conditions such as test load and patterns are defined. Figure 21 shows the setup and test load for IDD,
IPP and IDDQ measurements.
l
IDD currents (such as IDD0, IDD0A, IDD1, IDD1A, IDD2N, IDD2NA, IDD2NL, IDD2NT, IDD2P, IDD2Q, IDD3N, IDD3NA, IDD3P, IDD4R, IDD4RA,
IDD4W, IDD4WA, IDD5B, IDD5F2, IDD5F4, IDD6N, IDD6E, IDD6R, IDD6A, IDD7 and IDD8) are measured as time-averaged currents with all VDD
balls of the DDR4 SDRAM under test tied together. Any IPP or IDDQ current is not included in IDD currents.
l
l
IPP currents have the same definition as IDD except that the current on the VPP supply is measured.
IDDQ currents (such as IDDQ2NT and IDDQ4R) are measured as time-averaged currents with all VDDQ balls of the DDR4 SDRAM under test tied
together. Any IDD current is not included in IDDQ currents.
Attention: IDDQ values cannot be directly used to calculate IO power of the DDR4 SDRAM. They can be used to support correlation of simulated IO
power to actual IO power as outlined in Figure 22. In DRAM module application, IDDQ cannot be measured separately since VDD and VDDQ are
using one merged-power layer in Module PCB.
For IDD, IPP and IDDQ measurements, the following definitions apply:
l
l
l
l
l
l
l
“0” and “LOW” is defined as VIN <= VILAC(max).
“1” and “HIGH” is defined as VIN >= VIHAC(min).
“MID-LEVEL” is defined as inputs are VREF = VDD / 2.
Timings used for IDD, IPP and IDDQ Measurement-Loop Patterns are provided in Table 36.
Basic IDD, IPP and IDDQ Measurement Conditions are described in Table 37.
Detailed IDD, IPP and IDDQ Measurement-Loop Patterns are described in Table 38 through Table 46.
IDD Measurements are done after properly initializing the DDR4 SDRAM. This includes but is not limited to setting
RON = RZQ/7 (34 Ohm in MR1);
RTT_NOM = RZQ/6 (40 Ohm in MR1);
RTT_WR = RZQ/2 (120 Ohm in MR2);
RTT_PARK = Disable;
Qoff = 0 (Output Buffer enabled) in MR1;
B
TDQS_t disabled in MR1;
CRC disabled in MR2;
CA parity feature disabled in MR5;
Gear down mode disabled in MR3
Read/Write DBI disabled in MR5;
DM disabled in MR5
l
Attention: The IDD, IPP and IDDQ Measurement-Loop Patterns need to be executed at least one time before actual IDD or IDDQ measurement is
started.
l
l
Define D = {CS_n, ACT_n, RAS_n, CAS_n, WE_n } := {HIGH, LOW, LOW, LOW, LOW} ; apply BG/BA changes when directed.
Define D# = {CS_n, ACT_n, RAS_n, CAS_n, WE_n } := {HIGH, HIGH, HIGH, HIGH, HIGH} apply invert of BG/BA changes when directed above.
- 37 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
I
I
I
DDQ
DD
PP
V
V
V
DDQ
DD
PP
RESET
CK_t/CK_c
DDR4 SDRAM
CKE
CS
C
DQS_t/DQS_c
DQ
DM
ACT,RAS,CAS,WE
A,BG,BA
ODT
V
V
SSQ
SS
ZQ
NOTE:
1. DIMM level Output test load condition may be different from above
Figure 21. Measurement Setup and Test Load for IDD, IPP and IDDQ Measurements
Application specific
IDDQ
TestLad
memory channel
environment
Channel
IO Powe
Simulatin
IDDQ
Simuaion
IDDQ
Measurement
Correlation
X
X
Channel IO Power
Number
Figure 22. Correlation from simulated Channel IO Power to actual Channel IO Power supported by IDDQ Measurement.
- 38 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 36 ] Timings used for IDD, IPP and IDDQ Measurement-Loop Patterns
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
19-19-19
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Symbol
Unit
11-11-11
1.25
11
11
11
39
28
11
16
20
28
4
13-13-13
1.071
13
12
13
45
32
13
16
22
28
4
15-15-15
0.938
15
14
15
51
36
15
16
23
32
4
17-17-17
0.833
17
16
17
56
39
17
16
26
36
4
tCK
CL
ns
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
nCK
CWL
nRCD
nRC
nRAS
nRP
x4
x8
nFAW
x16
x4
nRRDS
nRRDL
x8
4
4
4
4
x16
x4
5
5
6
7
5
5
6
6
x8
5
5
6
6
x16
6
6
7
8
tCCD_S
4
4
4
4
tCCD_L
tWTR_S
tWTR_L
nRFC 2Gb
nRFC 4Gb
nRFC 8Gb
TBD
5
5
6
6
2
3
3
3
6
7
8
9
128
208
280
150
243
327
171
278
374
193
313
421
- 39 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 37 ] Basic IDD, IPP and IDDQ Measurement Conditions
Symbol
Description
Operating One Bank Active-Precharge Current (AL=0)
1
CKE: High; External clock: On; tCK, nRC, nRAS, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: High between ACT and PRE;
Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 38 on page 43; Data IO: VDDQ;
DM_n: stable at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 38 on page 43); Output Buffer and
IDD0
2
RTT: Enabled in Mode Registers ; ODT Signal: stable at 0; Pattern Details: see Table 38 on page 43
Operating One Bank Active-Precharge Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD0
IDD0A
IPP0
Operating One Bank Active-Precharge IPP Current
Same condition with IDD0
Operating One Bank Active-Read-Precharge Current (AL=0)
1
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: High between ACT, RD
IDD1
and PRE; Command, Address, Bank Group Address, Bank Address Inputs, Data IO: partially toggling according to Table 39 on
page 44; DM_n: stable at 1; Bank Activity: Cycling with one bank active at a time: 0,0,1,1,2,2,... (see Table 39 on page 44); Output Buf-
2
fer and RTT: Enabled in Mode Registers ; ODT Signal: stable at 0; Pattern Details: see Table 39 on page 44
Operating One Bank Active-Read-Precharge Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD1
IDD1A
IPP1
Operating One Bank Active-Read-Precharge IPP Current
Same condition with IDD1
Precharge Standby Current (AL=0)
1
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1; Command, Address, Bank Group
IDD2N
Address, Bank Address Inputs: partially toggling according to Table 40 on page 45; Data IO: VDDQ; DM_n: stable at 1; Bank Activity:
2
all banks closed; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: stable at 0; Pattern Details: see Table 40 on
page 45
Precharge Standby Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD2N
IDD2NA
IPP2N
Precharge Standby IPP Current
Same condition with IDD2N
Precharge Standby ODT Current
1
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1; Command, Address, Bank Group
IDD2NT Address, Bank Address Inputs: partially toggling according to Table 41 on page 46; Data IO: VSSQ; DM_n: stable at 1; Bank Activity:
2
all banks closed; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: toggling according to Table 41 on page 46; Pattern
Details: see Table 41 on page 46
IDDQ2NT Precharge Standby ODT IDDQ Current
(Optional) Same definition like for IDD2NT, however measuring IDDQ current instead of IDD current
Precharge Standby Current with CAL enabled
IDD2NL
3,5
Same definition like for IDD2N, CAL enabled
Precharge Standby Current with Gear Down mode enabled
IDD2NG
3,5
Same definition like for IDD2N, Gear Down mode enabled
Precharge Standby Current with DLL disabled
IDD2ND
3
Same definition like for IDD2N, DLL disabled
Precharge Standby Current with CA parity enabled
IDD2N_par
3
Same definition like for IDD2N, CA parity enabled
1
Precharge Power-Down Current CKE: Low; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1;
IDD2P
IPP2P
Command, Address, Bank Group Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all
2
banks closed; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: stable at 0
Precharge Power-Down IPP Current
Same condition with IDD2P
Precharge Quiet Standby Current
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1; Command, Address, Bank Group
1
IDD2Q
IDD3N
Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1;Bank Activity: all banks closed; Output Buffer and RTT:
Enabled in Mode Registers ; ODT Signal: stable at 0
2
Active Standby Current
1
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1; Command, Address, Bank Group
Address, Bank Address Inputs: partially toggling according to Table 40 on page 45; Data IO: VDDQ; DM_n: stable at 1;Bank Activity:
2
all banks open; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: stable at 0; Pattern Details: see Table 40 on page 45
- 40 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Symbol
Description
Active Standby Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD3N
IDD3NA
IPP3N
Active Standby IPP Current
Same condition with IDD3N
Active Power-Down Current
1
CKE: Low; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: stable at 1; Command, Address, Bank Group
Address, Bank Address Inputs: stable at 0; Data IO: VDDQ; DM_n: stable at 1; Bank Activity: all banks open; Output Buffer and
RTT: Enabled in Mode Registers ; ODT Signal: stable at 0
IDD3P
IPP3P
2
Active Power-Down IPP Current
Same condition with IDD3P
Operating Burst Read Current
2
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: High between RD; Command, Address,
Bank Group Address, Bank Address Inputs: partially toggling according to Table 42 on page 47; Data IO: seamless read data burst
with different data between one burst and the next one according to Table 42 on page 47; DM_n: stable at 1; Bank Activity: all banks
open, RD commands cycling through banks: 0,0,1,1,2,2,... (see Table 42 on page 47); Output Buffer and RTT: Enabled in Mode
IDD4R
2
Registers ; ODT Signal: stable at 0; Pattern Details: see Table 42 on page 47
Operating Burst Read Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD4R
IDD4RA
IDD4RB
IPP4R
Operating Burst Read Current with Read DBI
3
Read DBI enabled , Other conditions: see IDD4R
Operating Burst Read IPP Current
Same condition with IDD4R
IDDQ4R
Operating Burst Read IDDQ Current
(Optional)
Same definition like for IDD4R, however measuring IDDQ current instead of IDD current
IDDQ4RB
(Optional)
Operating Burst Read IDDQ Current with Read DBI
Same definition like for IDD4RB, however measuring IDDQ current instead of IDD current
Operating Burst Write Current
1
CKE: High; External clock: On; tCK, CL: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: High between WR; Command, Address,
Bank Group Address, Bank Address Inputs: partially toggling according to Table 43 on page 48; Data IO: seamless write data burst
with different data between one burst and the next one according to Table 43 on page 48; DM_n: stable at 1; Bank Activity: all banks
open, WR commands cycling through banks: 0,0,1,1,2,2,... (see Table 43 on page 48); Output Buffer and RTT: Enabled in Mode
IDD4W
2
Registers ; ODT Signal: stable at HIGH; Pattern Details: see Table 43 on page 48
Operating Burst Write Current (AL=CL-1)
AL = CL-1, Other conditions: see IDD4W
IDD4WA
IDD4WB
IDD4WC
IDD4W_par
IPP4W
Operating Burst Write Current with Write DBI
3
Write DBI enabled , Other conditions: see IDD4W
Operating Burst Write Current with Write CRC
3
Write CRC enabled , Other conditions: see IDD4W
Operating Burst Write Current with CA Parity
3
CA Parity enabled , Other conditions: see IDD4W
Operating Burst Write IPP Current
Same condition with IDD4W
Burst Refresh Current (1X REF)
CKE: High; External clock: On; tCK, CL, nRFC: see Table 36 on page 39; BL: 8 ; AL: 0; CS_n: High between REF; Command,
1
IDD5B
Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 45 on page 50; Data IO: VDDQ; DM_n:
stable at 1; Bank Activity: REF command every nRFC (see Table 45 on page 50); Output Buffer and RTT: Enabled in Mode
Registers ; ODT Signal: stable at 0; Pattern Details: see Table 45 on page 50
2
Burst Refresh Write IPP Current (1X REF)
Same condition with IDD5B
IPP5B
IDD5F2
IPP5F2
IDD5F4
IPP5F4
Burst Refresh Current (2X REF)
tRFC=tRFC_x2, Other conditions: see IDD5B
Burst Refresh Write IPP Current (2X REF)
Same condition with IDD5F2
Burst Refresh Current (4X REF)
tRFC=tRFC_x4, Other conditions: see IDD5B
Burst Refresh Write IPP Current (4X REF)
Same condition with IDD5F4
- 41 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Symbol
Description
Self Refresh Current: Normal Temperature Range
T
: 0 - 85°C; Low Power Array Self Refresh (LP ASR) : Normal4; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see
CASE
IDD6N
1
Table 36 on page 39; BL: 8 ; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n: stable
at 1; Bank Activity: Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: MID-LEVEL
2
Self Refresh IPP Current: Normal Temperature Range
Same condition with IDD6N
IPP6N
IDD6E
IPP6E
IDD6R
)
Self-Refresh Current: Extended Temperature Range
T
: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Extended4; CKE: Low; External clock: Off; CK_t and CK_c: LOW; CL: see
Table 36 on page 39; BL: 8 ; AL: 0; CS_n, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at
CASE
1
2
1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: MID-
LEVEL
Self Refresh IPP Current: Extended Temperature Range
Same condition with IDD6E
Self-Refresh Current: Reduced Temperature Range
4
T
: 0 - 45°C; Low Power Array Self Refresh (LP ASR) : Reduced ; CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see
CASE
1
Table 36 on page 39; BL: 8 ; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at
2
1; Bank Activity: Extended Temperature Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: MID-
LEVEL
Self Refresh IPP Current: Reduced Temperature Range
Same condition with IDD6R
IPP6R
IDD6A
IPP6A
Auto Self-Refresh Current
4
T
: 0 - 95°C; Low Power Array Self Refresh (LP ASR) : Auto ;CKE: Low; External clock: Off; CK_t and CK_c#: LOW; CL: see
CASE
1
Table 36 on page 39; BL: 8 ; AL: 0; CS_n#, Command, Address, Bank Group Address, Bank Address, Data IO: High; DM_n:stable at
2
1; Bank Activity: Auto Self-Refresh operation; Output Buffer and RTT: Enabled in Mode Registers ; ODT Signal: MID-LEVEL
Auto Self-Refresh IPP Current
Same condition with IDD6A
Operating Bank Interleave Read Current
CKE: High; External clock: On; tCK, nRC, nRAS, nRCD, nRRD, nFAW, CL: see Table 36 on page 39; BL: 8 ; AL: CL-1; CS_n: High
1
between ACT and RDA; Command, Address, Bank Group Address, Bank Address Inputs: partially toggling according to Table 46 on
page 51; Data IO: read data bursts with different data between one burst and the next one according to Table 46 on page 51; DM_n: stable
at 1; Bank Activity: two times interleaved cycling through banks (0, 1, ...7) with different addressing, see Table 46 on page 51; Output
IDD7
2
Buffer and RTT: Enabled in Mode Registers ; ODT Signal: stable at 0; Pattern Details: see Table 46 on page 51
Operating Bank Interleave Read IPP Current
Same condition with IDD7
IPP7
IDD8
IPP8
Maximum Power Down Current
TBD
Maximum Power Down IPP Current
Same condition with IDD8
NOTE :
1. Burst Length: BL8 fixed by MRS: set MR0 [A1:0=00].
2. Output Buffer Enable
- set MR1 [A12 = 0] : Qoff = Output buffer enabled
- set MR1 [A2:1 = 00] : Output Driver Impedance Control = RZQ/7
RTT_Nom enable
- set MR1 [A10:8 = 011] : RTT_NOM = RZQ/6
RTT_WR enable
- set MR2 [A10:9 = 01] : RTT_WR = RZQ/2
RTT_PARK disable
- set MR5 [A8:6 = 000]
3. CAL enabled : set MR4 [A8:6 = 001] : 1600MT/s
010] : 1866MT/s, 2133MT/s
011] : 2400MT/s
Gear Down mode enabled :set MR3 [A3 = 1] : 1/4 Rate
DLL disabled : set MR1 [A0 = 0]
CA parity enabled :set MR5 [A2:0 = 001] : 1600MT/s,1866MT/s, 2133MT/s
010] : 2400MT/s
Read DBI enabled : set MR5 [A12 = 1]
Write DBI enabled : set :MR5 [A11 = 1]
4. Low Power Array Self Refresh (LP ASR) : set MR2 [A7:6 = 00] : Normal
01] : Reduced Temperature range
10] : Extended Temperature range
11] : Auto Self Refresh
5. IDD2NG should be measured after sync pulse(NOP) input.
- 42 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 38 ] IDD0, IDD0A and IPP0 Measurement-Loop Pattern
4
Data
0
1,2
ACT
D, D
0
1
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
7
0
0
F
0
0
0
-
-
-
2
3,4
D_#, D_#
3
0
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
nRAS
...
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
-
repeat pattern 1...4 until nRC - 1, truncate if necessary
2
1
2
1*nRC
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 1 instead
2
2*nRC
3*nRC
4*nRC
5*nRC
6*nRC
7*nRC
8*nRC
9*nRC
10*nRC
11*nRC
12*nRC
13*nRC
14*nRC
15*nRC
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
3
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 3 instead
2
4
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
5
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 2 instead
2
6
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
7
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 0 instead
2
8
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
9
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 1 instead
2
10
11
12
13
14
15
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and
x8 only
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. DQ signals are VDDQ.
- 43 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 39 ] IDD1, IDD1A and IPP1 Measurement-Loop Pattern
4
Data
0
ACT
0
1
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
7
0
0
F
0
0
0
-
-
-
1, 2
3, 4
...
D, D
b
D#, D#
3
repeat pattern 1...4 until nRCD - AL - 1, truncate if necessary
D0=00, D1=FF
D2=FF, D3=00
D4=FF, D5=00
D6=00, D7=FF
0
nRCD -AL
RD
0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
repeat pattern 1...4 until nRC - 1, truncate if necessary
nRAS
0
1
0
1
0
0
0
0
0
0
-
...
1*nRC + 0
1*nRC + 1, 2
ACT
0
1
1
0
0
1
0
0
1
1
0
1
1
0
1
0
0
0
0
0
0
1
1
0
3
0
0
0
0
0
0
0
0
0
0
0
7
0
0
F
0
0
0
-
-
-
D, D
0
b
1*nRC + 3, 4
...
D#, D#
3
repeat pattern nRC + 1...4 until 1*nRC + nRAS - 1, truncate if necessary
D0=FF, D1=00
D2=00, D3=FF
D4=00, D5=FF
D6=FF, D7=00
1
1*nRC + nRCD - AL RD
0
1
1
0
1
0
0
1
1
0
0
0
0
0
0
0
0
0
...
repeat pattern 1...4 until nRAS - 1, truncate if necessary
PRE
1*nRC + nRAS
...
0
1
0
1
0
0
0
0
0
0
0
0
-
repeat nRC + 1...4 until 2*nRC - 1, truncate if necessary
2
2
3
4
5
6
8
9
2*nRC
3*nRC
4*nRC
5*nRC
6*nRC
7*nRC
9*nRC
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 1, use BG[1:0] = 2, BA[1:0] = 0 instead
2
10 10*nRC
11 11*nRC
12 12*nRC
13 13*nRC
14 14*nRC
15 15*nRC
16 16*nRC
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and x8 only
2
repeat Sub-Loop 1, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are used according to RD Commands, otherwise VDDQ
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are VDDQ.
- 44 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 40 ] IDD2N, IDD2NA, IDD2NL, IDD2NG, IDD2ND, IDD2N_par, IPP2,IDD3N, IDD3NA and IDD3P Measurement-Loop Pattern
4
Data
0
1
2
D, D
1
1
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
7
0
0
F
0
0
0
0
0
0
D, D
0
2
D#, D#
3
3
2
3
D#, D#
1
1
1
1
1
0
0
3
0
0
0
7
F
0
0
2
1
2
3
4
5
6
7
8
9
4-7
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 1 instead
2
8-11
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
12-15
16-19
20-23
24-27
28-31
32-35
36-39
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 1 instead
2
10 40-43
11 44-47
12 48-51
13 52-55
14 56-59
15 60-63
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. DQ signals are VDDQ.
- 45 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 41 ] IDD2NT and IDDQ2NT Measurement-Loop Pattern
4
Data
0
1
2
D, D
1
1
1
0
0
1
0
0
1
0
0
1
0
0
1
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
7
0
0
F
0
0
0
-
-
-
D, D
0
2
D#, D#
3
3
2
3
D#, D#
1
1
1
1
1
0
0
3
0
0
0
7
F
0
-
2
1
2
3
4
5
6
7
8
9
4-7
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 1, BA[1:0] = 1 instead
2
8-11
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 0, BA[1:0] = 2 instead
2
12-15
16-19
20-23
24-27
28-31
32-35
36-39
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 3, BA[1:0] = 1 instead
2
10 40-43
11 44-47
12 48-51
13 52-55
14 56-59
15 60-63
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 2, BA[1:0] = 2 instead
For x4
and x8
only
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 3, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, but ODT = 0 and BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, but ODT = 1 and BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. DQ signals are VDDQ.
- 46 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 42 ] IDD4R, IDDR4RA, IDD4RB and IDDQ4R Measurement-Loop Pattern
4
Data
D0=00, D1=FF
D2=FF, D3=00
D4=FF, D5=00
D6=00, D7=FF
0
RD
0
1
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
1
1
D
1
1
0
1
0
1
0
1
0
1
0
0
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
2,3
D#, D#
3
D0=FF, D1=00
D2=00, D3=FF
D4=00, D5=FF
D6=FF, D7=00
4
RD
0
1
1
0
1
0
0
1
0
1
0
0
0
7
F
0
5
D
1
1
0
1
0
1
0
1
0
1
0
0
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
6,7
D#, D#
3
2
2
3
4
5
6
7
8
9
8-11
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
12-15
16-19
20-23
24-27
28-31
32-35
36-39
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 1 instead
2
10 40-43
11 44-47
12 48-51
13 52-55
14 56-59
15 60-63
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and x8 only
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are used according to RD Commands, otherwise VDDQ.
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. Burst Sequence driven on each DQ signal by Read Command.
- 47 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 43 ] IDD4W, IDD4WA, IDD4WB and IDD4W_par Measurement-Loop Pattern
4
Data
D0=00, D1=FF
D2=FF, D3=00
D4=FF, D5=00
D6=00, D7=FF
0
WR
0
1
1
0
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
D
1
1
0
1
0
1
0
1
0
1
1
1
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
2,3
D#, D#
3
D0=FF, D1=00
D2=00, D3=FF
D4=00, D5=FF
D6=FF, D7=00
4
WR
0
1
1
0
1
1
0
1
0
1
0
0
0
7
F
0
5
D
1
1
0
1
0
1
0
1
0
1
1
1
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
6,7
D#, D#
3
2
2
3
4
5
6
7
8
9
8-11
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
12-15
16-19
20-23
24-27
28-31
32-35
36-39
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 1 instead
2
10 40-43
11 44-47
12 48-51
13 52-55
14 56-59
15 60-63
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and x8 only
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are used according to WR Commands, otherwise VDDQ.
2. BG1 is don’t care for x16 device
3. C[2:0] are used only for 3DS device
4. Burst Sequence driven on each DQ signal by Write Command.
- 48 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 44 ] IDD4WC Measurement-Loop Pattern
4
Data
D0=00, D1=FF
D2=FF, D3=00
0
WR
0
1
1
0
1
1
0
0
0
0
0
0
0
0
0
0
D4=FF, D5=00
D6=00, D7=FF
D8=CRC
1,2
3,4
D, D
1
1
0
1
0
1
0
1
0
1
1
1
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
D#, D#
3
0
D0=FF, D1=00
D2=00, D3=FF
D4=00, D5=FF
D6=FF, D7=00
D8=CRC
5
WR
0
1
1
0
1
1
0
1
0
1
0
0
0
7
F
0
6,7
D, D
1
1
0
1
0
1
0
1
0
1
1
1
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
8,9
D#, D#
3
2
2
3
4
5
6
7
8
9
10-14
15-19
20-24
25-29
30-34
35-39
40-44
45-49
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 1 instead
2
10 50-54
11 55-59
12 60-64
13 65-69
14 70-74
15 75-79
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and x8 only
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 0 instead
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device.
3. C[2:0] are used only for 3DS device.
4. Burst Sequence driven on each DQ signal by Write Command.
- 49 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 45 ] IDD5B Measurement-Loop Pattern
4
Data
0
1
2
0
1
2
3
REF
D
1
1
1
1
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
3
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
7
0
0
0
F
0
0
0
0
-
-
-
-
D
2
D#, D#
3
3
2
4
D#, D#
1
1
1
1
1
0
0
3
0
0
0
7
F
0
-
2
4-7
repeat pattern 1...4, use BG[1:0] = 1, BA[1:0] = 1 instead
2
8-11
repeat pattern 1...4, use BG[1:0] = 0, BA[1:0] = 2 instead
2
12-15
16-19
20-23
24-27
28-31
32-35
36-39
40-43
44-47
48-51
52-55
56-59
60-63
64 ... nRFC - 1
repeat pattern 1...4, use BG[1:0] = 1, BA[1:0] = 3 instead
2
repeat pattern 1...4, use BG[1:0] = 0, BA[1:0] = 1 instead
2
repeat pattern 1...4, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat pattern 1...4, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat pattern 1...4, use BG[1:0] = 1, BA[1:0] = 0 instead
2
repeat pattern 1...4, use BG[1:0] = 2, BA[1:0] = 0 instead
2
repeat pattern 1...4, use BG[1:0] = 3, BA[1:0] = 1 instead
2
repeat pattern 1...4, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat pattern 1...4, use BG[1:0] = 3, BA[1:0] = 3 instead
For x4 and x8 only
2
repeat pattern 1...4, use BG[1:0] = 2, BA[1:0] = 1 instead
2
repeat pattern 1...4, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat pattern 1...4, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat pattern 1...4, use BG[1:0] = 3, BA[1:0] = 0 instead
repeat Sub-Loop 1, Truncate, if necessary
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device.
3. C[2:0] are used only for 3DS device.
4. DQ signals are VDDQ.
- 50 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
1
[ Table 46 ] IDD7 Measurement-Loop Pattern
4
Data
0
1
ACT
RDA
0
0
0
1
0
1
0
0
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
0
0
0
0
0
0
-
D0=00, D1=FF
D2=FF, D3=00
D4=FF, D5=00
D6=00, D7=FF
0
2
D
1
1
0
1
0
1
0
1
0
1
0
0
0
0
0
3
0
0
0
0
0
0
0
7
0
F
0
0
-
-
2
3
D#
3
...
repeat pattern 2...3 until nRRD - 1, if nRRD > 4. Truncate if necessary
nRRD
ACT
RDA
0
0
0
1
0
1
0
0
0
1
0
0
0
1
1
1
1
0
0
0
0
0
1
0
0
0
0
0
0
-
D0=FF, D1=00
D2=00, D3=FF
D4=00, D5=FF
D6=FF, D7=00
1
nRRD + 1
...
repeat pattern 2 ... 3 until 2*nRRD - 1, if nRRD > 4. Truncate if necessary
2
2
3
4
2*nRRD
3*nRRD
4*nRRD
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 3 instead
repeat pattern 2 ... 3 until nFAW - 1, if nFAW > 4*nRRD. Truncate if necessary
2
5
6
7
8
9
nFAW
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 1 instead
2
nFAW + nRRD
nFAW + 2*nRRD
nFAW + 3*nRRD
nFAW + 4*nRRD
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 0, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 1, BA[1:0] = 0 instead
repeat Sub-Loop 4
2
10 2*nFAW
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 0 instead
2
11 2*nFAW + nRRD
12 2*nFAW + 2*nRRD
13 2*nFAW + 3*nRRD
14 2*nFAW + 4*nRRD
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 1 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 2 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 3 instead
repeat Sub-Loop 4
For x4 and x8
only
2
15 3*nFAW
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 1 instead
2
16 3*nFAW + nRRD
17 3*nFAW + 2*nRRD
18 3*nFAW + 3*nRRD
19 3*nFAW + 4*nRRD
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 2 instead
2
repeat Sub-Loop 0, use BG[1:0] = 2, BA[1:0] = 3 instead
2
repeat Sub-Loop 1, use BG[1:0] = 3, BA[1:0] = 0 instead
repeat Sub-Loop 4
20 4*nFAW
repeat pattern 2 ... 3 until nRC - 1, if nRC > 4*nFAW. Truncate if necessary
NOTE :
1. DQS_t, DQS_c are VDDQ.
2. BG1 is don’t care for x16 device.
3. C[2:0] are used only for 3DS device.
4. Burst Sequence driven on each DQ signal by Read Command. Outside burst operation, DQ signals are VDDQ.
- 51 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
11.2 4Gb DDR4 SDRAM E-die IDD Specification Table
IDD and IPP values are for typical operating range of voltage and temperature unless otherwise noted.
[ Table 47 ] I and I
Specification
DDQ
DD
256Mx16 (K4A4G165WE)
DDR4-2133
DDR4-2400
17-17-17
DDR4-2666
19-19-19
Symbol
15-15-15
Unit
NOTE
VDD 1.2V
VDD 1.2V
VDD 1.2V
IDD Max.
IDD Max.
IDD Max.
35
36
35
37
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
DD0
I
DD0A
53
53
I
DD1
55
56
I
DD1A
DD2N
15
15
I
18
18
I
DD2NA
16
16
I
DD2NT
11
11
I
DD2NL
15
15
I
DD2NG
12
12
I
DD2ND
15
15
I
DD2N_par
10
10
I
DD2P
DD2Q
13
13
I
27
27
I
DD3N
28
28
I
DD3NA
13
13
I
DD3P
118
122
121
87
129
133
133
86
I
DD4R
I
I
DD4RA
DD4RB
I
DD4W
91
100
96
I
I
DD4WA
DD4WB
DD4WC
87
80
83
I
93
103
195
160
120
13
I
DD4W_par
194
160
120
13
I
DD5B
I
I
DD5F2
DD5F4
I
DD6N
20
20
I
DD6E
DD6R
10
10
I
13
13
I
DD6A
185
6.5
186
6.5
I
I
DD7
DD8
- 52 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 48 ] I Specification
PP
256Mx16 (K4A4G165WE)
DDR4-2133
15-15-15
DDR4-2400
17-17-17
DDR4-2666
19-19-19
Symbol
Unit
NOTE
VPP 2.5V
VPP 2.5V
VPP 1.2V
IPP Max.
IPP Max.
IPP Max.
4
4
4
4
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
I
PP0
PP1
3
3
I
PP2N
3
3
I
PP2P
3
3
I
PP3N
3
3
I
PP3P
3
3
I
PP4R
3
3
I
PP4W
19
16
12
4
19
16
12
4
I
PP5B
I
I
PP5F2
PP5F4
I
PP6N
4
4
I
PP6E
4
4
I
PP6R
4
4
I
PP6A
12
2
12
2
I
I
PP7
PP8
[ Table 49 ] I
Specification
DD6
Value
256Mx16 (K4A4G165WE)
DDR4-2400
Symbol
Temperature Range
Unit
NOTE
DDR4-2133
15-15-15
DDR4-2666
17-17-17
1.2V
13
19-19-19
o
0 - 85 C
13
20
TBD
TBD
mA
mA
3,4
4,5
I
DD6N
o
0 - 95 C
20
I
DD6E
NOTE :
1. Some IDD currents are higher for x16 organization due to larger page-size architecture.
2. Max. values for IDD currents considering worst case conditions of process, temperature and voltage.
3. Applicable for MR2 settings A6=0 and A7=0.
4. Include a max value for IDD6
.
5. Applicable for MR2 settings A6=0 and A7=1. IDD6E is only specified for devices which support the Extended Temperature Range feature.
- 53 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
12. Input/Output Capacitance
[ Table 50 ] Silicon pad I/O Capacitance
DDR4-1600/1866/2133
DDR4-2400/2666
Symbol
Parameter
Unit
NOTE
min
0.55
-0.1
max
1.4
min
max
1.15
0.1
C
Input/output capacitance
0.55
-0.1
pF
pF
1,2,3
1,2,3,11
1,2,3,5
IO
C
Input/output capacitance delta
0.1
DIO
Input/output capacitance delta DQS_t and
DQS_c
C
-
0.05
-
0.05
pF
DDQS
C
1,3
Input capacitance, CK_t and CK_c
0.2
-
0.8
0.2
-
0.7
pF
pF
CK
C
1,3,4
1,3,6
Input capacitance delta CK_t and CK_c
0.05
0.05
DCK
Input capacitance(CTRL, ADD, CMD pins
only)
C
0.2
-0.1
-0.1
0.8
0.1
0.1
0.2
-0.1
-0.1
0.7
0.1
0.1
pF
pF
pF
I
C
1,3,7,8
Input capacitance delta(All CTRL pins only)
DI_ CTRL
Input capacitance delta(All ADD/CMD pins
only)
1,2,9,10
C
DI_ ADD_CMD
C
1,3
Input/output capacitance of ALERT
Input/output capacitance of ZQ
Input capacitance of TEN
0.5
0.5
0.2
1.5
2.3
2.3
0.5
0.5
0.2
1.5
2.3
2.3
pF
pF
pF
ALERT
C
1,3,12
1,3,13
ZQ
CTEN
NOTE:
1. This parameter is not subject to production test. It is verified by design and characterization. The silicon only capacitance is validated by de-embedding the package L & C
parasitic. The capacitance is measured with VDD, VDDQ, VSS, VSSQ applied with all other signal pins floating. Measurement procedure tbd.
2. DQ, DM_n, DQS_T, DQS_C, TDQS_T, TDQS_C. Although the DM, TDQS_T and TDQS_C pins have different functions, the loading matches DQ and DQS
3. This parameter applies to monolithic devices only; stacked/dual-die devices are not covered here
4. Absolute value CK_T-CK_C
5. Absolute value of CIO(DQS_T)-CIO(DQS_C)
6. CI applies to ODT, CS_n, CKE, A0-A15, BA0-BA1, BG0-BG1, RAS_n, CAS_n/A15, WE_n/A14, ACT_n and PAR.
7. CDI CTRL applies to ODT, CS_n and CKE
8. CDI_CTRL = CI(CTRL)-0.5*(CI(CLK_T)+CI(CLK_C))
9. CDI_ADD_ CMD applies to, A0-A15, BA0-BA1, BG0-BG1,RAS_n, CAS_n/A15, WE_n/A14, ACT_n and PAR.
10. CDI_ADD_CMD = CI(ADD_CMD)-0.5*(CI(CLK_T)+CI(CLK_C))
11. CDIO = CIO(DQ,DM)-0.5*(CIO(DQS_T)+CIO(DQS_C))
12. Maximum external load capacitance on ZQ pin: tbd pF.
13.TEN pin may be DRAM internally pulled low through a weak pull-down resistor to VSS. In this case CTEN might not be valid and system shall verify TEN signal with Vendor
specific information.
- 54 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 51 ] DRAM package electrical specifications(X16)
DDR4-1600/1866/2133/2400/2666
Symbol
Parameter
Unit
NOTE
min
45
14
-
max
85
Z
Input/output Zpkg
Input/output Pkg Delay
Input/Output Lpkg
ps
nH
pF
1
1
IO
T
45
dIO
L
3.4
0.82
85
1, 2
1, 3
1
io
C
Input/Output Cpkg
DQS_t, DQS_c Zpkg
DQS_t, DQS_c Pkg Delay
DQS Lpkg
-
io
Z
45
14
-
IO DQS
Td
1
45
ps
nH
IO DQS
L
3.4
1, 2
io DQS
C
DQS Cpkg
-
-
0.82
10
10
5
pF
1, 3
io DQS
Delta Zpkg DQSU_t, DQSU_c
Delta Zpkg DQSL_t, DQSL_c
Delta Delay DQSU_t, DQSU_c
Delta Delay DQSL_t, DQSL_c
Input CTRL pins Zpkg
-
-
DZ
DIO DQS
-
-
ps
ps
-
D
TdDIO DQS
-
5
-
Z
1
50
90
I CTRL
T
1
Input CTRL pins Pkg Delay
Input CTRL Lpkg
Input CTRL Cpkg
Input- CMD ADD pins Zpkg
Input- CMD ADD pins Pkg Delay
Input CMD ADD Lpkg
Input CMD ADD Cpkg
CLK_c Zpkg
14
-
42
3.4
0.7
90
ps
nH
pF
dI_ CTRL
L
1, 2
1, 3
1
i CTRL
C
-
i CTRL
Z
Td
L
50
14
-
IADD CMD
1
52
ps
nH
pF
IADD_ CMD
3.9
0.86
90
1, 2
1, 3
1
i ADD CMD
C
-
i ADD CMD
Z
50
14
-
CK
Td
1
CLK_c Pkg Delay
Input CLK Lpkg
42
ps
nH
pF
CK
L
3.4
0.7
10
1, 2
i CLK
C
Input CLK Cpkg
-
1, 3
i CLK
DZ
-
-
-
-
-
-
Delta Zpkg CLK_c
Delta Delay CLK_c
ZQ Zpkg
-
DCK
D
-
5
ps
TdCK
Z
36
20
40
20
100
90
OZQ
Td
ZQ Delay
ps
O ZQ
Z
ALERT Zpkg
100
55
O ALERT
Td
ALERT Delay
ps
O ALERT
NOTE :
1. Package implementations shall meet spec if the Zpkg and Pkg Delay fall within the ranges shown, and the maximum Lpkg and Cpkg do not exceed the maximum value
shown
2. It is assumed that Lpkg can be approximated as Lpkg = Zo*Td
3. It is assumed that Cpkg can be approximated as Cpkg = Td/Zo
- 55 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
13. Electrical Characteristics & AC Timing
13.1 Reference Load for AC Timing and Output Slew Rate
Figure 23 represents the effective reference load of 50 ohms used in defining the relevant AC timing parameters of the device as well as output slew rate
measurements.
It is not intended as a precise representation of any particular system environment or a depiction of the actual load presented by a production tester.
System designers should use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers correlate to
their production test conditions, generally one or more coaxial transmission lines terminated at the tester electronics.
VDDQ
50 Ohm
DUT
CK_t, CK_c
DQ
DQS_t
DQS_c
VTT = VDDQ
Timing Reference Point
Timing Reference Point
Figure 23. Reference Load for AC Timing and Output Slew Rate
13.2 tREFI
Average periodic Refresh interval (tREFI) of DDR4 SDRAM is defined as shown in the table.
[ Table 52 ] tREFI by device density
Parameter
Symbol
2Gb
160
7.8
4Gb
260
7.8
8Gb
350
7.8
16Gb
TBD
TBD
Units
ns
NOTE
All Bank Refresh to active/refresh cmd time
tRFC
0CT
85C
85C
s
CASE
-40CT
85CT
Average periodic refresh interval
tREFI
7.8
3.9
7.8
3.9
7.8
3.9
TBD
TBD
s
s
2
1
CASE
95C
CASE
NOTE :
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR4 SDRAM devices support the following options or requirements referred to in
this material.
2. Supported only for Industrial Temperature
- 56 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
13.3 Timing Parameters by Speed Grade
[ Table 53 ] Timing Parameters by Speed Bin for DDR4-1600 to DDR4-2666
Speed
Parameter
DDR4-1600
DDR4-1866
DDR4-2133
MIN MAX
DDR4-2400
MIN MAX
DDR4-2666
Units
NOTE
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
Clock Timing
tCK
(DLL_OFF)
Minimum Clock Cycle Time (DLL off mode)
8
20
8
20
8
20
8
20
8
20
ns
-
Average Clock Period
Average high pulse width
Average low pulse width
tCK(avg)
tCH(avg)
tCL(avg)
1.25
0.48
0.48
<1.5
0.52
0.52
1.071
0.48
0.48
<1.25
0.52
0.938
0.48
0.48
<1.071
0.52
0.833
0.48
0.48
<0.938
0.52
0.750
0.48
0.48
<0.833
0.52
ns
35,36
tCK(avg)
tCK(avg)
0.52
0.52
0.52
0.52
tCK(avg)min + tJIT(per)min_tot
tCK(avg)m ax + tJIT(per)max_tot
Absolute Clock Period
tCK(abs)
tCK(avg)
Absolute clock HIGH pulse width
Absolute clock LOW pulse width
Clock Period Jitter- total
tCH(abs)
tCL(abs)
0.45
0.45
-63
-
0.45
0.45
-54
-
0.45
0.45
-47
-
0.45
0.45
-42
-
0.45
0.45
-38
-
tCK(avg)
tCK(avg)
ps
23
24
23
26
-
-
-
-
-
JIT(per)_tot
JIT(per)_dj
63
31
54
27
47
23
42
21
38
19
Clock Period Jitter- deterministic
-31
-27
-23
-21
-19
ps
Clock Period Jitter during DLL locking peri-
od
tJIT(per, lck)
-50
50
-43
43
-38
38
-33
33
-30
30
ps
Cycle to Cycle Period Jitter
tJIT(cc)_total
tJIT(cc)_dj
-
-
125
63
-
-
107
54
-
-
94
47
-
-
83
42
-
-
75
38
ps
ps
25
26
Cycle to Cycle Period Jitter deterministic
Cycle to Cycle Period Jitter during DLL
locking period
tJIT(cc, lck)
-
100
-
86
-
75
-
67
-
60
ps
Duty Cycle Jitter
tJIT(duty)
tERR(2per)
tERR(3per)
tERR(4per)
tERR(5per)
tERR(6per)
tERR(7per)
tERR(8per)
tERR(9per)
tERR(10per)
tERR(11per)
tERR(12per)
tERR(13per)
tERR(14per)
tERR(15per)
tERR(16per)
tERR(17per)
tERR(18per)
TBD
-92
TBD
92
TBD
-79
TBD
79
TBD
-69
TBD
69
TBD
-61
TBD
61
TBD
-55
TBD
55
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
ps
Cumulative error across 2 cycles
Cumulative error across 3 cycles
Cumulative error across 4 cycles
Cumulative error across 5 cycles
Cumulative error across 6 cycles
Cumulative error across 7 cycles
Cumulative error across 8 cycles
Cumulative error across 9 cycles
Cumulative error across 10 cycles
Cumulative error across 11 cycles
Cumulative error across 12 cycles
Cumulative error across 13 cycles
Cumulative error across 14 cycles
Cumulative error across 15 cycles
Cumulative error across 16 cycles
Cumulative error across 17 cycles
Cumulative error across 18 cycles
-109
-121
-131
-139
-145
-151
-156
-160
-164
-168
-172
-175
-178
-180
-183
-185
109
121
131
139
145
151
156
160
164
168
172
175
178
189
183
185
-94
94
-82
82
-73
73
-66
66
-104
-112
-119
-124
-129
-134
-137
-141
-144
-147
-150
-152
-155
-157
104
112
119
124
129
134
137
141
144
147
150
152
155
157
159
-91
91
-81
81
-73
73
-98
98
-87
87
-78
78
-104
-109
-113
-117
-120
-123
-126
-129
-131
-133
-135
-137
-139
104
109
113
117
120
123
126
129
131
133
135
137
-92
92
-83
83
-97
97
-87
87
-101
-104
-107
-110
-112
-114
-116
-118
-120
-122
-124
101
104
107
110
112
114
116
118
120
122
124
-91
91
-94
94
-96
96
-99
99
-101
-103
-104
-106
-108
-110
-112
101
103
104
106
108
110
112
-159
t
139
t
Cumulative error across n = 13, 14 . . . 49,
50 cycles
ERR(nper)min = ((1 + 0.68ln(n)) * JIT(per)_total min)
tERR(nper)
tIS(base)
ps
ps
t
t
ERR(nper)max = ((1 + 0.68ln(n)) * JIT(per)_total max)
Command and Address setup time to
115
215
-
-
100
200
-
-
80
-
-
62
-
-
TBD
TBD
-
-
CK_t,
CK_c referenced to Vih(ac) / Vil(ac) levels
Command and Address setup time to
CK_t,
tIS(Vref)
180
162
ps
CK_c referenced to Vref levels
Command and Address hold time to CK_t,
CK_c referenced to Vih(dc) / Vil(dc) levels
tIH(base)
tIH(Vref)
tIPW
140
215
600
-
-
-
125
200
525
-
-
-
105
180
460
-
-
-
87
-
-
-
TBD
TBD
385
-
-
-
ps
ps
ps
Command and Address hold time to CK_t,
CK_c referenced to Vref levels
162
410
Control and Address Input pulse width for
each input
Command and Address Timing
max(5
nCK,
6.250 ns)
max(5
nCK,
5.355 ns)
max(5
nCK,
5.625 ns)
max(5
nCK,
5 ns)
max(5
nCK,
5 ns)
CAS_n to CAS_n command delay for same
bank group
tCCD_L
-
-
-
-
-
nCK
34
CAS_n to CAS_n command delay for differ-
ent bank group
tCCD_S
4
-
-
4
-
-
4
-
-
4
-
-
-
4
-
-
-
nCK
nCK
nCK
34
34
34
ACTIVATE to ACTIVATE Command delay
to different bank group for 2KB page size
Max(4nC
K,6ns)
Max(4nC
K,5.3ns)
Max(4nC
K,5.3ns)
Max(4nC
K,5.3ns)
Max(4nC
K,5.3ns)
tRRD_S(2K)
tRRD_S(1K)
ACTIVATE to ACTIVATE Command delay
to different bank group for 2KB page size
Max(4nC
K,5ns)
Max(4nC
K,4.2ns)
Max(4nC
K,3.7ns)
Max(4nC
K,3.3ns)
Max(4nC
K,3ns)
- 57 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Speed
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
Units
NOTE
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
ACTIVATE to ACTIVATE Command delay
to different bank group for 1/2KB page size
Max(4nC
K,5ns)
Max(4nC
K,4.2ns)
Max(4nC
K,3.7ns)
Max(4nC
K,3.3ns)
Max(4nC
K,3ns)
tRRD_S(1/2K)
-
-
nCK
nCK
nCK
nCK
ns
34
34
34
34
34
34
34
ACTIVATE to ACTIVATE Command delay
to same bank group for 2KB page size
Max(4nC
K,7.5ns)
Max(4nC
K,6.4ns)
Max(4nC
K,6.4ns)
Max(4nC
K,6.4ns)
Max(4nC
K,6.4ns)
tRRD_L(2K)
tRRD_L(1K)
tRRD_L(1/2K)
tFAW_2K
-
-
-
-
-
-
-
-
-
-
-
-
ACTIVATE to ACTIVATE Command delay
to same bank group for 1KB page size
Max(4nC
K,6ns)
Max(4nC
K,5.3ns)
Max(4nC
K,5.3ns)
Max(4nC
K,4.9ns)
Max(4nC
K,4.9ns)
ACTIVATE to ACTIVATE Command delay
to same bank group for 1/2KB page size
Max(4nC
K,6ns)
Max(4nC
K,5.3ns)
Max(4nC
K,5.3ns)
Max(4nC
K,4.9ns)
Max(4nC
K,4.9ns)
Max(28n
CK,35ns)
Max(28n
CK,30ns)
Max(28n
CK,30ns)
Max(28n
CK,30ns)
Max(28n
CK,30ns)
Four activate window for 2KB page size
Four activate window for 1KB page size
Four activate window for 1/2KB page size
Max(20n
CK,25ns)
Max(20n
CK,23ns)
Max(20n
CK,21ns)
Max(20n
CK,21ns)
Max(20n
CK,21ns)
tFAW_1K
ns
Max(16n
CK,20ns)
Max(16n
CK,17ns)
Max(16n
CK,15ns)
Max(16n
CK,13ns)
Max(16n
CK,12ns)
tFAW_1/2K
ns
Delay from start of internal write transaction
to internal read command for different bank
group
max
(2nCK,
2.5ns)
max
max(2nC
K,2.5ns)
max(2nC
K,2.5ns)
max(2nC
K,2.5ns)
1,2,e,3
4
tWTR_S
tWTR_L
-
-
-
-
-
-
-
-
(2nCK,
2.5ns)
-
-
ns
ns
Delay from start of internal write transaction
to internal read command for same bank
group
max
(4nCK,7.
5ns)
max
(4nCK,7.
5ns)
max(4nC
K,7.5ns)
max(4nC
K,7.5ns)
max(4nC
K,7.5ns)
1,34
max
(4nCK,7.
5ns)
max
(4nCK,7.
5ns)
Internal READ Command to PRECHARGE
Command delay
max(4nC
K,7.5ns)
max(4nC
K,7.5ns)
max(4nC
K,7.5ns)
tRTP
tWR
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
34
1
WRITE recovery time
15
15
15
15
15
tWR+max
(4nCK,3.7
5ns)
tWR+max
(5nCK,3.
75ns)
tWR+max
(5nCK,3.
75ns)
tWR+max
(5nCK,3.
75ns)
tWR+max
(5nCK,3.
75ns)
Write recovery time when CRC and DM are
enabled
tWR_CRC
_DM
1, 28
tWTR_S+
max
(4nCK,3.7
5ns)
tWTR_S+
max
(5nCK,3.
75ns)
tWTR_S+
max
(5nCK,3.
75ns)
tWTR_S+
max
(5nCK,3.
75ns)
tWTR_S+
max
delay from start of internal write transaction
to internal read command for different bank
group with both CRC and DM enabled
tWTR_S_C
RC_DM
2, 29,
34
-
-
-
-
-
-
-
-
-
-
ns
ns
(5nCK,3.
75ns)
tWTR_L+
max
(4nCK,3.7
5ns)
tWTR_L+
max
(5nCK,3.
75ns)
tWTR_L+
max
(5nCK,3.
75ns)
tWTR_L+
max
(5nCK,3.
75ns)
tWTR_L+
max
(5nCK,3.
75ns)
delay from start of internal write transaction
to internal read command for same bank
group with both CRC and DM enabled
tWTR_L_C
RC_DM
3,30,
34
DLL locking time
tDLLK
tMRD
597
8
-
-
597
8
-
-
768
8
-
-
768
8
-
-
854
8
-
-
nCK
nCK
Mode Register Set command cycle time
max(24n
CK,15ns)
max(24n
CK,15ns)
max(24n
CK,15ns)
max(24n
CK,15ns)
max(24n
CK,15ns)
Mode Register Set command update delay
Multi-Purpose Register Recovery Time
tMOD
-
-
-
-
-
-
-
-
-
-
nCK
nCK
tMPRR
1
1
1
1
1
33
tMOD
(min)
+ AL + PL
tMOD
(min)
+ AL + PL
tMOD
(min)
+ AL + PL
tMOD
(min)
+ AL + PL
tMOD
(min)
+ AL + PL
Multi Purpose Register Write Recovery
Time
tWR_MPR
-
-
-
-
-
nCK
Auto precharge write recovery + precharge
time
tDAL(min)
tPDA_S
tPDA_H
Programmed WR + roundup ( tRP / tCK(avg))
nCK
UI
DQ0 or DQL0 driven to 0 set-up time to first
DQS rising edge
0.5
0.5
-
-
0.5
0.5
-
-
0.5
0.5
-
-
0.5
0.5
-
-
0.5
0.5
-
-
45,47
46,47
DQ0 or DQL0 driven to 0 hold time from last
DQS fall-ing edge
UI
CS_n to Command Address Latency
max(3
nCK,
3.748 ns)
max(3
nCK,
3.748 ns)
CS_n to Command Address Latency
tCAL
3
-
4
-
4
-
-
-
nCK
tMOD+
tCAL
tMOD+
tCAL
Mode Register Set cyce time in CAL mode
tMRD_tCAL
tMOD_tCAL
-
-
-
-
nCK
nCK
Mode Register Set update delay in CAL
mode
tMOD+
tCAL
tMOD+
tCAL
DRAM Data Timing
DQS_t,DQS_c to DQ skew, per group, per
access
tCK(avg)/ 13,18,3
9,49
tDQSQ
tQH
-
0.16
-
0.16
-
0.16
-
0.16
-
0.18
2
DQ output hold per group, per access from
DQS_t,DQS_c
tCK(avg)/ 13,17,1
0.76
0.63
0.66
-
-
-
0.76
0.63
0.66
-
-
-
0.76
0.64
0.69
-
-
-
0.74
0.64
0.72
-
-
-
0.74
TBD
0.72
-
-
-
2
8,39,49
Data Valid Window per device: (tQH - tD-
QSQ) of each UI on a given DRAM
17,18,3
9,49
tDVWd
tDVWp
UI
Data Valid Window , per pin per UI : (tQH -
tDQSQ) each UI on a pin of a given DRAM
17,18,3
9,49
UI
DQ low impedance time from CK_t, CK_c
DQ high impedance time from CK_t, CK_c
Data Strobe Timing
tLZ(DQ)
tHZ(DQ)
-450
-
225
225
-390
-
195
195
-390
-
180
180
-330
-
175
175
-310
-
170
170
ps
ps
39
39
- 58 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Speed
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
Units
NOTE
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
NOTE4
4
NOTE
44
NOTE
44
0.9
NA
NOTE44
0.9
NA
NOTE44
0.9
0.9
0.9
tCK
tCK
tCK
39,40
39,41
39
DQS_t, DQS_c differential READ Preamble
tRPRE
NOTE
44
NOTE
44
NA
NA
NA
NA
1.8
1.8
DQS_t, DQS_c differential READ Postam-
ble
NOTE
45
NOTE
45
NOTE
45
tRPST
0.33
NOTE 45
0.33
NOTE 45
0.33
0.33
0.33
DQS_t,DQS_c differential output high time
DQS_t,DQS_c differential output low time
tQSH
tQSL
0.4
0.4
0.9
NA
-
-
-
0.4
0.4
0.9
NA
-
-
-
0.4
0.4
0.9
NA
-
-
-
0.4
0.4
0.9
1.8
-
-
-
-
0.4
0.4
0.9
1.8
-
-
-
-
tCK
tCK
tCK
tCK
21,39
20,39
42
DQS_t, DQS_c differential WRITE Pream-
ble
tWPRE
43
DQS_t, DQS_c differential WRITE Postam-
ble
tWPST
tLZ(DQS)
tHZ(DQS)
tDQSL
0.33
-450
-
-
0.33
-390
-
-
0.33
-360
-
-
0.33
-330
-
-
0.33
-310
-
-
tCK
ps
DQS_t and DQS_c low-impedance time
(Referenced from RL-1)
225
225
0.54
0.54
0.27
-
195
195
0.54
0.54
0.27
-
180
180
0.54
0.54
0.27
-
175
175
0.54
0.54
0.27
-
170
170
0.54
0.54
0.27
-
39
39
DQS_t and DQS_c high-impedance time
(Referenced from RL+BL/2)
ps
DQS_t, DQS_c differential input low pulse
width
0.46
0.46
-0.27
0.18
0.18
0.46
0.46
-0.27
0.18
0.18
0.46
0.46
-0.27
0.18
0.18
0.46
0.46
-0.27
0.18
0.18
0.46
0.46
-0.27
0.18
0.18
tCK
tCK
tCK
tCK
tCK
DQS_t, DQS_c differential input high pulse
width
tDQSH
tDQSS
tDSS
DQS_t, DQS_c rising edge to CK_t, CK_c
rising edge (1 clock preamble)
DQS_t, DQS_c falling edge setup time to
CK_t, CK_c rising edge
DQS_t, DQS_c falling edge hold time from
CK_t, CK_c rising edge
tDSH
-
-
-
-
-
DQS_t, DQS_c rising edge output timing lo-
catino from rising CK_t, CK_c with DLL On
mode
tDQSCK
(DLL On)
37,38,3
9
-225
-
225
370
-195
-
195
330
-180
-
180
310
-175
-
175
290
-170
-
170
270
ps
ps
DQS_t, DQS_c rising edge output variance
window per DRAM
tDQSCKI
(DLL On)
37,38,3
9
MPSM Timing
tMOD(mi
n) +
tCP-
tMOD(mi
n) +
tCP-
tMOD(mi
n) +
tCP-
tMOD(mi
n) +
tCP-
Command path disable delay upon MPSM
entry
tMPED
-
-
-
-
-
-
-
-
TBD
TBD
-
-
DED(min)
DED(min)
DED(min)
DED(min)
tMOD(mi
n) +
tCP-
tMOD(mi
n) +
tCP-
tMOD(mi
n) +
tCP-
tMOD(mi
n) + tCP-
DED(min)
Valid clock requirement after MPSM entry
Valid clock requirement before MPSM exit
tCKMPE
DED(min)
DED(min)
DED(min)
tCKSRX(
min)
tCKSRX(
min)
tCKSRX(
min)
tCKSRX(
min)
tCKMPX
tXMP
-
-
-
-
-
-
-
-
TBD
TBD
-
-
Exit MPSM to commands not requiring a
locked DLL
tXS(min)
tXS(min)
tXS(min)
tXS(min)
tXMP(min
) +
tXS-
tXMP(min
) +
tXS-
tXMP(min
) +
tXS-
tXMP(min
) +
tXS-
Exit MPSM to commands requiring a
locked DLL
tXMPDLL
tMPX_S
-
-
-
-
-
-
-
-
TBD
TBD
-
-
DLL(min)
DLL(min)
DLL(min)
DLL(min)
tIS(min) +
tIHL(min)
tIS(min) +
tIHL(min)
tIS(min) +
tIHL(min)
tIS(min) +
tIHL(min)
CS setup time to CKE
Calibration Timing
Power-up and RESET calibration time
Normal operation Full calibration time
Normal operation Short calibration time
Reset/Self Refresh Timing
tZQinit
tZQoper
tZQCS
1024
512
-
-
-
1024
512
-
-
-
1024
512
-
-
-
1024
512
-
-
-
1024
512
-
-
-
nCK
nCK
nCK
128
128
128
128
128
max
max
max
max
max
Exit Reset from CKE HIGH to a valid com-
mand
(5nCK,tR
FC(min)+
10ns)
(5nCK,tR
FC(min)+
10ns)
(5nCK,tR
FC(min)+
10ns)
(5nCK,tR
FC(min)+
10ns)
(5nCK,tR
FC(min)+
10ns)
tXPR
tXS
-
-
-
-
-
nCK
Exit Self Refresh to commands not requir-
ing a locked DLL
tRFC(min
)+10ns
tRFC(min
)+10ns
tRFC(min
)+10ns
tRFC(min
)+10ns
tRFC(min
)+10ns
-
-
-
-
-
-
-
-
-
-
nCK
nCK
tX-
SRX to commands not requiring a locked
DLL in Self Refresh ABORT
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
S_ABORT(min
)
Exit Self Refresh to ZQCL,ZQCS and MRS
(CL,CWL,WR,RTP and Gear Down)
tXS_FAST
(min)
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
tRFC4(mi
n)+10ns
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nCK
nCK
nCK
Exit Self Refresh to commands requiring a
locked DLL
tDLLK(mi
n)
tDLLK(mi
n)
tDLLK(mi
n)
tDLLK(mi
n)
tDLLK(mi
n)
tXSDLL
tCKESR
Minimum CKE low width for Self refresh en-
try to exit timing
tCKE(min
)+1nCK
tCKE(min
)+1nCK
tCKE(min
)+1nCK
tCKE(min
)+1nCK
tCKE(min
)+1nCK
- 59 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Speed
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
DDR4-2666
Units
NOTE
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
tCKE(min
)+
1nCK+PL
tCKE(min
)+
1nCK+PL
tCKE(min
)+
1nCK+PL
tCKE(min
)+
1nCK+PL
tCKE(min
)+
1nCK+PL
Minimum CKE low width for Self refresh en-
try to exit timing with CA Parity enabled
tCKESR_ PAR
-
-
-
-
-
nCK
max
(5nCK,10
ns)
max
(5nCK,10
ns)
Valid Clock Requirement after Self Refresh
Entry (SRE) or Power-Down Entry (PDE)
max(5nC
K,10ns)
max(5nC
K,10ns)
max(5nC
K,10ns)
tCKSRE
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nCK
nCK
nCK
Valid Clock Requirement after Self Refresh
Entry (SRE) or Power-Down when CA Par- tCKSRE_PAR (5nCK,10
ity is enabled
max
max
(5nCK,10
ns)+PL
max
(5nCK,10
ns)+PL
max
(5nCK,10
ns)+PL
max
(5nCK,10
ns)+PL
ns)+PL
Valid Clock Requirement before Self Re-
fresh Exit (SRX) or Power-Down Exit (PDX)
or Reset Exit
max
(5nCK,10
ns)
max
(5nCK,10
ns)
max(5nC
K,10ns)
max(5nC
K,10ns)
max(5nC
K,10ns)
tCKSRX
Power Down Timing
Exit Power Down with DLL on to any valid
command;Exit Precharge Power Down with
DLL frozen to commands not requiring a
locked DLL
max
(4nCK,6n
s)
max
(4nCK,6n
s)
max
(4nCK,6n
s)
max
(4nCK,6n
s)
max
(4nCK,6n
s)
tXP
-
-
-
-
-
-
-
-
-
-
nCK
nCK
max
(3nCK,
5ns)
max
(3nCK,
5ns)
max
(3nCK,
5ns)
max
(3nCK,
5ns)
max
(3nCK,
5ns)
CKE minimum pulse width
tCKE
31,32
Command pass disable delay
tCPDED
tPD
4
-
4
-
4
-
4
-
4
-
nCK
nCK
tCKE(min
)
tCKE(min
)
tCKE(min
)
tCKE(min
)
tCKE(min
)
Power Down Entry to Exit Timing
9*tREFI
9*tREFI
9*tREFI
9*tREFI
9*tREFI
6
7
7
Timing of ACT command to Power Down
entry
tACTPDEN
tPRPDEN
tRDPDEN
1
1
-
-
-
1
1
-
-
-
2
2
-
-
-
2
2
-
-
-
2
2
-
-
-
nCK
nCK
nCK
Timing of PRE or PREA command to Power
Down entry
Timing of RD/RDA command to Power
Down entry
RL+4+1
RL+4+1
RL+4+1
RL+4+1
RL+4+1
WL+4+(t
WR/
tCK(avg))
WL+4+(t
WR/
tCK(avg))
WL+4+(t
WR/
tCK(avg))
WL+4+(t
WR/
tCK(avg))
WL+4+(t
WR/
tCK(avg))
Timing of WR command to Power Down
entry (BL8OTF, BL8MRS, BC4OTF)
tWRPDEN
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nCK
nCK
nCK
4
5
4
Timing of WRA command to Power Down
entry (BL8OTF, BL8MRS, BC4OTF)
WL+4+W
R+1
WL+4+W
R+1
WL+4+W
R+1
WL+4+W
R+1
WL+4+W
R+1
tWRAPDEN
WL+2+(t
WR/
tCK(avg))
WL+2+(t
WR/
tCK(avg))
WL+2+(t
WR/
tCK(avg))
WL+2+(t
WR/
tCK(avg))
WL+2+(t
WR/
tCK(avg))
Timing of WR command to Power Down
entry (BC4MRS)
tWRP-
BC4DEN
Timing of WRA command to Power Down
entry (BC4MRS)
tWRAP-
BC4DEN
WL+2+W
R+1
WL+2+W
R+1
WL+2+W
R+1
WL+2+W
R+1
WL+2+W
R+1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nCK
nCK
nCK
5
7
Timing of REF command to Power Down
entry
tREFPDEN
tMRSPDEN
1
1
2
2
2
Timing of MRS command to Power Down
entry
tMOD(mi
n)
tMOD(mi
n)
tMOD(mi
n)
tMOD(mi
n)
tMOD(mi
n)
PDA Timing
Mode Register Set command cycle time in
PDA mode
max(16n
CK,10ns)
max(16n
CK,10ns)
max(16n
CK,10ns)
max(16n
CK,10ns)
max(16n
CK,10ns)
tMRD_PDA
tMOD_PDA
-
nCK
nCK
-
-
-
-
Mode Register Set command update delay
in PDA mode
tMOD
tMOD
tMOD
tMOD
tMOD
ODT Timing
Asynchronous RTT turn-on delay (Power-
Down with DLL frozen)
tAONAS
1.0
9.0
1.0
9.0
1.0
9.0
1.0
9.0
1.0
9.0
ns
Asynchronous RTT turn-off delay (Power-
Down with DLL frozen)
tAOFAS
tADC
1.0
0.3
9.0
0.7
1.0
0.3
9.0
0.7
1.0
0.3
9.0
0.7
1.0
0.3
9.0
0.7
1.0
0.3
9.0
0.7
ns
RTT dynamic change skew
tCK(avg)
Write Leveling Timing
First DQS_t/DQS_n rising edge after write
leveling mode is programmed
tWLMRD
40
25
-
-
40
25
-
-
40
25
-
-
40
25
-
-
40
25
-
-
nCK
nCK
12
12
DQS_t/DQS_n delay after write leveling
mode is programmed
tWLDQSEN
Write leveling setup time from rising CK_t,
CK_c crossing to rising DQS_t/DQS_n
crossing
tWLS
tWLH
0.13
0.13
-
-
0.13
0.13
-
-
0.13
0.13
-
-
0.13
0.13
-
-
0.13
0.13
-
-
tCK(avg)
tCK(avg)
Write leveling hold time from rising DQS_t/
DQS_n crossing to rising CK_t, CK_ cross-
ing
Write leveling output delay
Write leveling output error
CA Parity Timing
tWLO
0
0
9.5
2
0
0
9.5
2
0
0
9.5
2
0
0
9.5
2
0
0
9.5
2
ns
ns
tWLOE
Commands not guaranteed to be executed
during this time
tPAR_UN-
KNOWN
-
PL
-
PL
-
PL
-
PL
-
PL
nCK
- 60 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
Speed
DDR4-1600
DDR4-1866
DDR4-2133
DDR4-2400
MIN MAX
DDR4-2666
Units
NOTE
Parameter
Symbol
MIN
MAX
MIN
MAX
MIN MAX
MIN
MAX
Delay from errant command to ALERT_n
assertion
tPAR_ALERT_
ON
-
PL+6ns
-
PL+6ns
-
PL+6ns
128
-
PL+6ns
144
-
PL+6ns
nCK
nCK
Pulse width of ALERT_n signal when as-
serted
tPAR_ALERT_
PW
48
96
43
56
112
50
64
72
80
-
160
71
Time from when Alert is asserted till control-
ler must start providing DES commands in
Persistent CA parity mode
tPAR_ALERT
_RSP
-
-
-
57
-
64
nCK
nCK
Parity Latency
PL
4
4
4
5
5
CRC Error Reporting
CRC error to ALERT_n latency
tCRC_ALERT
3
6
13
10
3
6
13
10
3
6
13
10
3
6
13
10
3
6
13
10
ns
CRC_ALERT_
PW
CRC ALERT_n pulse width
nCK
Geardown timing
Exit RESET from CKE HIGH to a valid MRS
geardown (T2/Reset)
tXPR_GEAR
tXS_GEAR
TBD
TBD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CKE High Assert to Gear Down Enable
time(T2/CKE)
tSYNC_GEA
R
MRS command to Sync pulse time(T3)
TBD
-
27
27
Sync pulse to First valid command(T4)
Geardown setup time
Geardown hold time
tREFI
tCMD_GEAR
tGEAR_setup
tGEAR_hold
TBD
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
2
-
-
nCK
nCK
2Gb
4Gb
8Gb
16Gb
2Gb
4Gb
8Gb
16Gb
2Gb
4Gb
8Gb
16Gb
160
260
350
TBD
110
160
260
TBD
90
-
-
-
-
-
-
-
-
-
-
-
-
160
260
350
TBD
110
160
260
TBD
90
-
-
-
-
-
-
-
-
-
-
-
-
160
260
350
TBD
110
160
260
TBD
90
-
-
-
-
-
-
-
-
-
-
-
-
160
260
350
550
110
160
260
350
90
-
-
-
-
-
-
-
-
-
-
-
-
160
260
350
550
110
160
260
350
90
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
34
34
34
34
34
34
34
34
34
34
34
34
tRFC1 (min)
tRFC2 (min)
tRFC4 (min)
110
160
TBD
110
160
TBD
110
160
TBD
110
160
260
110
160
260
- 61 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
NOTE :
1. Start of internal write transaction is defined as follows :
For BL8 (Fixed by MRS and on-the-fly) : Rising clock edge 4 clock cycles after WL.
For BC4 (on-the-fly) : Rising clock edge 4 clock cycles after WL.
For BC4 (fixed by MRS) : Rising clock edge 2 clock cycles after WL.
2. A separate timing parameter will cover the delay from write to read when CRC and DM are simultaneously enabled
3. Commands requiring a locked DLL are: READ (and RAP) and synchronous ODT commands.
4. tWR is defined in ns, for calculation of tWRPDEN it is necessary to round up tWR/tCK to the next integer.
5. WR in clock cycles as programmed in MR0.
6. tREFI depends on TOPER.
7. CKE is allowed to be registered low while operations such as row activation, precharge, autoprecharge or refresh are in progress, but power-down IDD spec will not be
applied until finishing those operations.
8. For these parameters, the DDR4 SDRAM device supports tnPARAM[nCK]=RU{tPARAM[ns]/tCK(avg)[ns]}, which is in clock cycles assuming all input clock jitter
specifications are satisfied
9. When CRC and DM are both enabled, tWR_CRC_DM is used in place of tWR.
10. When CRC and DM are both enabled tWTR_S_CRC_DM is used in place of tWTR_S.
11. When CRC and DM are both enabled tWTR_L_CRC_DM is used in place of tWTR_L.
12. The max values are system dependent.
13. DQ to DQS total timing per group where the total includes the sum of deterministic and random timing terms for a specified BER. BER spec and measurement method are
tbd.
14. The deterministic component of the total timing. Measurement method tbd.
15. DQ to DQ static offset relative to strobe per group. Measurement method tbd.
16. This parameter will be characterized and guaranteed by design.
17U When the device is operated with the input clock jitter, this parameter needs to be derated by the actual tjit(per)_total of the input clock. (output deratings are relative to the
SDRAM input clock). Example tbd.
18. DRAM DBI mode is off.
19. DRAM DBI mode is enabled. Applicable to x8 and x16 DRAM only.
20. tQSL describes the instantaneous differential output low pulse width on DQS_t - DQS_c, as measured from on falling edge to the next consecutive rising edge
21. tQSH describes the instantaneous differential output high pulse width on DQS_t - DQS_c, as measured from on falling edge to the next consecutive rising edge
22. There is no maximum cycle time limit besides the need to satisfy the refresh interval tREFI
23. tCH(abs) is the absolute instantaneous clock high pulse width, as measured from one rising edge to the following falling edge
24. tCL(abs) is the absolute instantaneous clock low pulse width, as measured from one falling edge to the following rising edge
25. Total jitter includes the sum of deterministic and random jitter terms for a specified BER. BER target and measurement method are tbd.
26. The deterministic jitter component out of the total jitter. This parameter is characterized and gauranteed by design.
27. This parameter has to be even number of clocks
28. When CRC and DM are both enabled, tWR_CRC_DM is used in place of tWR.
29. When CRC and DM are both enabled tWTR_S_CRC_DM is used in place of tWTR_S.
30. When CRC and DM are both enabled tWTR_L_CRC_DM is used in place of tWTR_L.
31. After CKE is registered LOW, CKE signal level shall be maintained below VILDC for tCKE specification ( Low pulse width ).
32. After CKE is registered HIGH, CKE signal level shall be maintained above VIHDC for tCKE specification ( HIGH pulse width ).
33. Defined between end of MPR read burst and MRS which reloads MPR or disables MPR function.
34. Parameters apply from tCK(avg)min to tCK(avg)max at all standard JEDEC clock period values as stated in the Speed Bin Tables.
35. This parameter must keep consistency with Speed-Bin Tables .
36. DDR4-1600 AC timing apply if DRAM operates at lower than 1600 MT/s data rate.
UI=tCK(avg).min/2
37. applied when DRAM is in DLL ON mode.
38. Assume no jitter on input clock signals to the DRAM
39. Value is only valid for RZQ/7 RONNOM = 34 ohms
40. 1tCK toggle mode with setting MR4:A11 to 0
41. 2tCK toggle mode with setting MR4:A11 to 1, which is valid for DDR4-2400/2666/3200 speed grade.
42. 1tCK mode with setting MR4:A12 to 0
43. 2tCK mode with setting MR4:A12 to 1, which is valid for DDR4-2400/2666/3200 speed grade.
44. The maximum read preamble is bounded by tLZ(DQS)min on the left side and tDQSCK(max) on the right side.
45. DQ falling signal middle-point of transferring from High to Low to first rising edge of DQS diff-signal cross-point
46. last falling edge of DQS diff-signal cross-point to DQ rising signal middle-point of transferring from Low to High
47. VrefDQ value must be set to either its midpoint or Vcent_DQ(midpoint) in order to capture DQ0 or DQL0 low level for entering PDA mode.
48. The maximum read postamble is bound by tDQSCK(min) plus tQSH(min) on the left side and tHZ(DQS)max on the right side.
49. Reference level of DQ output signal is specified with a midpoint as a widest part of Output signal eye which should be approximately 0.7 * VDDQ as a center level of the
static single-ended output peak-to-peak swing with a driver impedance of 34 ohms and an effective test load of 50 ohms to VTT = VDDQ .
- 62 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
13.4 The DQ input receiver compliance mask for voltage and timing
The DQ input receiver compliance mask for voltage and timing is shown in the figure below. The receiver mask (Rx Mask) defines area the input signal
must not encroach in order for the DRAM input receiver to be expected to be able to successfully capture a valid input signal; it is not the valid data-eye.
Figure 24. DQ Receiver(Rx) compliance mask
DQx
DQz
DQy
(Largest Vref_DQ Level)
(Smallest Vref_DQ Level)
Vcent_DQz
Vcent_DQx
Vcent_DQy
Vcent_DQ(midpoint)
Vref variation
(Component)
Figure 25. Across pin Vref DQ voltage variation
The Vref_DQ voltage is an internal reference voltage level that shall be set to the properly trained setting, which is generally Vcent_DQ(midpoint), in order
to have valid Rx Mask values.
Vcent_DQ is defined as the midpoint between the largest Vref_DQ voltage level and the smallest Vref_DQ voltage level across all DQ pins for a given
DDR4 DRAM component. Each DQ pin Vref level is defined by the center, i.e. widest opening, of the cumulative data input eye as depicted in
Figure 24.This clarifies that any DDR4 DRAM component level variation must be accounted for within the DDR4 DRAM Rx mask.The component level
Vref will be set by the system to account for Ron and ODT settings.
- 63 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
DQS, DQs Data-in at DRAM Ball
DQS, DQs Data-in at DRAM Ball
Rx Mask
Rx Mask - Alternative View
DQS_t
DQS_c
DQS_t
DQS_c
0.5xTdiVW 0.5xTdiVW
0.5xTdiVW 0.5xTdiVW
DRAMa
DRAMa
Rx Mask
Rx Mask
DQx-z
DQx-z
TdiVW
TdiVW
tDQS2DQ + 0.5 x TdiVW
tDQS2DQ
Rx Mask
DRAMb
DQy
DRAMb
DQy
Rx Mask
TdiVW
tDQ2DQ
tDQ2DQ
Rx Mask
DRAMb
DQz
DRAMb
DQz
Rx Mask
TdiVW
tDQ2DQ
tDQS2DQ + 0.5 x TdiVW
tDQS2DQ
Rx Mask
DRAMc
DQz
DRAMc
DQz
Rx Mask
TdiVW
tDQ2DQ
tDQ2DQ
Rx Mask
DRAMc
DQy
DRAMc
DQy
Rx Mask
TdiVW
tDQ2DQ
NOTE : DQx represents an optimally centered mask.
DQy represents earliest valid mask.
NOTE : DRAMa represents a DRAM without any DQS/DQ skews.
DRAMb represents a DRAM with early skews (negative tDQS2DQ).
DQz represents latest valid mask.
NOTE : Figures show skew allowed between DRAM to DRAM and DQ to DQ for a DRAM. Signals assume data centered aligned at DRAM Latch.
TdiPW is not shown; composite data-eyes shown would violate TdiPW.
VCENT DQ(midpoint) is not shown but is assummed to be midpoint of VdiVW..
Figure 26. DQS to DQ and DQ to DQ Timings at DRAM Balls
All of the timing terms in Figure 26 are measured at the VdIVW_total voltage levels centered around Vcent_DQ(midpoint) and are referenced to the
DQS_t/DQS_c center aligned to the DQ per pin.
- 64 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
The rising edge slew rates are defined by srr1 and srr2. The slew rate measurement points for a rising edge are shown in Figure 5A below: A low to high
transition tr1 is measured from 0.5*VdiVW(max) below Vcent_DQ(midpoint) to the last transition through 0.5*VdiVW(max) above Vcent_DQ(midpoint)
while tr2 is measured from the last transition through 0.5*VdiVW(max) above Vcent_DQ(midpoint) to the first transition through the 0.5*VIHL_AC(min)
above Vcent_DQ(midpoint).
Rising edge slew rate equations:
srr1 = VdIVW(max) / tr1
srr2 = (VIHL_AC(min) – VdIVW(max)) / (2*tr2)
t
r2
0.5*VdiVW(max)
Vcent_DQ(midpoint)
0.5*VdiVW(max)
Rx Mask
t
r1
Figure 27. Slew Rate Conditions For Rising Transition
The falling edge slew rates are defined by srf1 and srf2. The slew rate measurement points for a falling edge are shown in Figure 5B below: A high to low
transition tf1 is measured from 0.5*VdiVW(max) above Vcent_DQ(midpoint) to the last transition through 0.5*VdiVW(max) below Vcent_DQ(midpoint)
while tf2 is measured from the last transition through 0.5*VdiVW(max) below Vcent_DQ(midpoint) to the first transition through the 0.5*VIHL_AC(min)
below Vcent_DQ(pin mid).
Falling edge slew rate equations:
srf1 = VdIVW(max) / tf1
srf2 = (VIHL_AC(min) – VdIVW(max)) / (2*tf2)
t
r1
0.5*VdiVW(max)
Vcent_DQ(midpoint)
0.5*VdiVW(max)
Rx Mask
t
r2
Figure 28. Slew Rate Conditions For Falling Transition
- 65 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 54 ] DRAM DQs In Receive Mode; * UI=tck(avg)min/2
1600/1866/2133
min max
2400
2666
Symbol
Parameter
Unit
NOTE
min
max
min
max
136
VdIVW
Rx Mask voltage - pk-pk
-
-
130
-
120
mV 1,2,10
UI* 1,2,10
0.2
TdIVW
Rx timing window
-
186
-
0.2
-
-
150
0.22
-
VIHL_AC
TdIPW
DQ AC input swing pk-pk
DQ input pulse width
-
160
0.58
-0.17
-
mV
UI*
3,4,10
5,10
0.58
-0.17
-
0.58
-0.19
-
-
tDQS2DQ
tDQ2DQ
Rx Mask DQS to DQ offset
Rx Mask DQ to DQ offset
Input Slew Rate over VdIVW if tCK >= 0.935ns
0.17
0.17
tbd
9
0.19
0.105
tbd
tbd
tbd
tbd
UI* 6, 10
tbd
9
UI*
7
1.0
1.0
1.0
V/ns 8,10
V/ns 8,10
V/ns 9,10
V/ns 9,10
srr1, srf1
srr2
Input Slew Rate over
VdIVW if 0.935ns > tCK >= 0.625ns
-
-
1.25
9
1.25
0.2*srr1
0.2*srr1
Rising Input Slew Rate
over 1/2 VIHL_AC
0.2*srr1
0.2*srf1
9
0.2*srr1
0.2*srf1
9
Falling Input Slew Rate
over 1/2 VIHL_AC
srf2
9
9
NOTE :
1. Data Rx mask voltage and timing total input valid window where VdIVW is centered around Vcent_DQ( midpoint) after VrefDQ training is completed. The data Rx mask is
applied per bit and should include voltage and temperature drift terms. The input buffer design specification is to achieve at least a BER = e-16 when the RxMask is not
violated. The BER will be characterized and extrapolated if necessary using a dual dirac method from a higher BER(tbd).
2. Defined over the DQ internal Vref range 1.
3. See Overshoot and Undershoot Specifications.
4. DQ input pulse signal swing into the receiver must meet or exceed VIHL AC(min). . VIHL_AC(min) is to be achieved on an UI basis when a rising and falling edge occur in
the same UI, i.e. a valid TdiPW.
5. DQ minimum input pulse width defined at the Vcent_DQ( midpoint).
6. DQS to DQ offset is skew between DQS and DQs within a nibble (x4) or word (x8, x16) at the DDR4 SDRAM balls over process, voltage, and temperature.
7. DQ to DQ offset is skew between DQs within a nibble (x4) or word (x8, x16) at the DDR4 SDRAM balls for a given component over process, voltage, and temperature.
8. Input slew rate over VdIVW Mask centered at Vcent_DQ( midpoint). Slowest DQ slew rate to fastest DQ slew rate per transition edge must be within 1.7 V/ns of each other.
9. Input slew rate between VdIVW Mask edge and VIHL_AC(min) points.
10. All Rx Mask specifications must be satisfied for each UI. For example, if the minimum input pulse width is violated when satisfying TdiVW(min), VdiVW(max), and minimum
slew rate limits, then either TdiVW(min) or minimum slew rates would have to be increased to the point where the minimum input pulse width would no longer be violated.
- 66 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
13.5 DDR4 Function Matrix
DDR4 SDRAM has several features supported by ORG and also by Speed. The following Table is the summary of the features.
[ Table 55 ] Function Matrix (By ORG. V:Supported, Blank:Not supported)
Functions
x4
x8
x16
NOTE
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Write Leveling
Temperature controlled Refresh
Low Power Auto Self Refresh
Fine Granularity Refresh
Multi Purpose Register
Data Mask
Data Bus Inversion
TDQS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
ZQ calibration
DQ Vref Training
Per DRAM Addressability
Mode Register Readout
CAL
WRITE CRC
CA Parity
Control Gear Down Mode
Programmable Preamble
Maximum Power Down Mode
Boundary Scan Mode
Additive Latency
V
V
V
V
V
3DS
- 67 -
Rev. 1.4
K4A4G165WE
datasheet
DDR4 SDRAM
[ Table 56 ] Function Matrix (By Speed. V:Supported, Blank:Not supported)
DLL Off mode
DLL On mode
2400Mbps
Functions
NOTE
equal or slower
than
1600/1866/2133
Mbps
2666Mbps
250Mbps
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Write Leveling
Temperature controlled Refresh
Low Power Auto Self Refresh
Fine Granularity Refresh
Multi Purpose Register
Data Mask
Data Bus Inversion
TDQS
V
V
ZQ calibration
DQ Vref Training
Per DRAM Addressability
Mode Register Readout
CAL
V
WRITE CRC
CA Parity
Control Gear Down Mode
Programmable Preamble ( = 2tCK)
Maximum Power Down Mode
Boundary Scan Mode
3DS
V
V
V
V
V
V
V
V
V
- 68 -
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