K1S6416B9D-BI700 [SAMSUNG]

DRAM;

K1S6416B9D-BI700


型号：	K1S6416B9D-BI700
厂家：	SAMSUNG SEMICONDUCTOR
描述：	DRAM 动态存储器
文件：	总17页 (文件大小：411K)
下载：	下载PDF数据表文档文件

K1S6416B9D-BI70T

DRAM

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0 SAMSUNG

K1S6416B9D-FI700

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 0.75 MM PITCH, FPBGA-48

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0 SAMSUNG

K1S6416B9D-FI70T

DRAM

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0 SAMSUNG

K1S6416BCC

4Mx16 bit Page Mode Uni-Transistor Random Access Memory

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17 SAMSUNG

K1S6416BCC

4Mx16 bit Page Mode Uni-Transistor Random Access Memory

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16 SAMSUNG

K1S6416BCC-I

4Mx16 bit Page Mode Uni-Transistor Random Access Memory

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8 SAMSUNG

K1S6416BCC-I

4Mx16 bit Page Mode Uni-Transistor Random Access Memory

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15 SAMSUNG

K1S6416BCC-I0000

Pseudo Static RAM, 4MX16, 70ns, CMOS, TBD

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0 SAMSUNG

K1S6416BCD-FI700

Pseudo Static RAM, 4MX16, 70ns, CMOS, PBGA48, 6 X 8 MM, 0.75 MM PITCH, FBGA-48

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0 SAMSUNG

K1-TCG2

0.3 to 3000 MHz

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0 MINI

K1-TCG2+

0.3 to 3000 MHz

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0 MINI

K1-TCM

0.5 to 2500MHz

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0 MINI

K1-TCM+

0.5 to 2500MHz

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0 MINI

K1-TCN

600 to 2600 MHz

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0 MINI

K1-TCN+

600 to 2600 MHz

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0 MINI

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