IRLU110 [SAMSUNG]

Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3;
IRLU110
型号: IRLU110
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 4A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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IRLU110A

Advanced Power MOSFET

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22 FAIRCHILD

IRLU110A

ADVANCED POWER MOSFET

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37 FAIRCHILD

IRLU110ATU

Avalanche Rugged Technology

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20 FAIRCHILD

IRLU110PBF

HEXFET㈢ Power MOSFET

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38 IRF

IRLU110PBF

Power MOSFET

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19 VISHAY

IRLU111

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 4A I(D) | TO-251

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14 ETC

IRLU120

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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55 IRF

IRLU120

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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53 IRF

IRLU120

HEXFET Power MOSFET

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34 IRF

IRLU120

Power Field-Effect Transistor, 7.9A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

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0 SAMSUNG

IRLU120A

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8.4A I(D) | TO-251AA

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30 ETC

IRLU120A

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRLU120ATU

Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3

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0 FAIRCHILD

IRLU120N

Power MOSFET(Vdss=100V, Rds(on)=0.185ohm, Id=10A)

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93 IRF

IRLU120NPBF

Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3

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0 IRF