IRFZ24 [SAMSUNG]

Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN;
IRFZ24
型号: IRFZ24
厂家: SAMSUNG SEMICONDUCTOR    SAMSUNG SEMICONDUCTOR
描述:

Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFZ24-017

Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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2 INFINEON

IRFZ24A

ADVANCED POWER MOSFET

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95 FAIRCHILD

IRFZ24A

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 17A I(D) | TO-220AB

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188 ETC

IRFZ24AJ69Z

Power Field-Effect Transistor, 17A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220, 3 PIN

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1 FAIRCHILD

IRFZ24L

HEXFET Power MOSFET

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43 IRF

IRFZ24L

HEXFET Power MOSFET

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90 IRF

IRFZ24L

Power MOSFET

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15 VISHAY

IRFZ24LPBF

Power MOSFET

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21 VISHAY

IRFZ24N

N-channel enhancement mode TrenchMOS transistor

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363 PHILIPS

IRFZ24N

Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A)

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1634 IRF

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0 PHILIPS

IRFZ24NL

Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)

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99 IRF

IRFZ24NL

Power MOSFET

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36 TRSYS

IRFZ24NLPBF

HEXFET Power MOSFET

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100 IRF

IRFZ24NPBF

HEXFET Power MOSFET

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190 IRF