STS3401 概述
P-Channel E nhancement Mode MOSFET P沟道é nhancement模式MOSFET
STS3401 数据手册
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PDF下载S TS 3401
S amHop Microelectronics C orp.
J un.15 2004
P -C hannel E nhancement Mode MOS FE T
PR ODUCT S UMMAR Y
FE ATUR E S
VDS S
ID
S uper high dense cell design for low R DS (ON).
R ugged and reliable.
R DS (ON) ( m
Ω
) Max
75 @ VG S = -10V
-3A
-30V
S OT-23 P ackage.
100 @ VG S = -4.5V
D
S OT-23
G
S
ABS OLUTE MAXIMUM R ATING S (T
A
=25 C unless otherwise noted)
P arameter
Limit
- 30
Unit
V
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
- 3
I
D
Drain C urrent-C ontinuous a @ T
-P ulsed b
J
=125 C
A
A
A
I
DM
- 10
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
I
S
-1.25
P
D
W
C
1.25
Operating J unction and S torage
Temperature R ange
T
J
, TS TG
-55 to 150
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-Ambient a
C
/W
R
J A
100
1
S TS 3401
E LE C T R IC AL C HAR AC T E R IS T IC S (T
A
25 C unless otherwise noted)
=
Typ C Max
P arameter
C ondition
Min
Unit
S ymbol
OFF C HAR AC TE R IS TIC S
5
V
G S 0V, I
=
D -250uA
=
Drain-S ource Breakdown Voltage
-30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS -24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
-1
=
=
G S
20V, VDS 0V
=
100
=
b
ON C HAR AC TE R IS TIC S
V
G S (th)
-1
6
-1.5
-2.5
75
V
G ate Threshold Voltage
V
DS =VG S , I
=
D
= -250uA
=
m-ohm
m-ohm
V
V
V
V
G S -10V, I
D
-3A
Drain-S ource On-S tate R esistance
R
DS (ON)
G S = -4.5V, I
D
= -2A
100
DS = -5V, VG S = -10V
On-S tate Drain C urrent
I
D(ON)
A
S
gFS
5
Forward Transconductance
=
DS -5V,
ID - 3A
=
c
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
653
130
97
P
P
P
F
F
F
C
IS S
V
DS =-15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S c
Turn-On Delay Time
13
t
D(ON)
ns
ns
V = -15V,
D
I
D
= -1A,
R ise Time
tr
7
V
R
R
G E N = - 10V,
G E N = 6 ohm
58
Turn-Off Delay Time
Fall Time
tD(OFF)
ns
ns
L
= 15 ohm
tf
26
nC
nC
13.5
V
V
DS =-15V,I
D
=-3A,VG S =-10V
=-3A,VG S =-4.5V
Q
g
Total G ate C harge
DS =-15V,I
D
7
2.3
G ate-S ource C harge
G ate-Drain C harge
nC
nC
Q
Q
gs
V
V
DS =-15V, I
G S =-10V
D
= -3A,
gd
2.8
2
S TS 3401
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ C Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
b
5
Diode F orward Voltage
V
S D
V
G S = 0V, Is =-1.25A
-1.2
-0.8
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
25
20
15
10
20
25 C
-VG S =5V
16
Tj=125 C
-VG S =10,9,8,7,6V
12
-VG S =4V
8
-VG S =3V
5
0
4
-55 C
0
3
0.0
0.5
1
1.5
2
2.5
0
2
4
6
8
10
12
-VDS , Drain-to-S ource Voltage (V)
-VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2.2
1.8
V
G S =-10V
=-3A
1000
I
D
800
600
1.4
1.0
C iss
400
0.6
0.2
0
200
0
C oss
C rss
0
5
10
15
20
25
30
-50 -25
0
25
50
100 125
Tj( C )
75
-VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S T S 3401
1.3
1.10
1.07
1.04
V
DS =V G S
ID=-250uA
1.2
ID=-250uA
1.1
1.0
0.9
1.00
0.97
0.8
0.7
0.6
0.94
0.91
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
with T emperature
12
20
10
10
8
6
4
2
0
2
T
J
=25 C
1.6
V
DS =-5V
20
0
0
0.4
0.8
1.2
2.0
0
5
10
15
25
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
V
DS =-15V
=-3A
8
6
4
t
i
I
D
10
1
1
m
i
0
L
m
)
s
N
O
1
0
(
R DS
0
m
s
1
s
1
D
C
V
G S =-10V
2
0
0.1
S ingle P ulse
T c=25 C
0.03
0.1
1
10
30 50
0
2
4
6
8
10 12 16 20
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S T S 3401
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
5
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
10%
VG S
INVE R TE D
R G E N
G
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
10
1
0.5
0.2
DM
P
0.1
1
t
0.1
2
t
0.05
0.02
1. R thJ A (t)=r (t) * R thJ A
th
2. R J A=S ee Datasheet
3. TJ M-TA = P DM* R thJ A (t)
4. Duty C ycle, D=t1/t2
Single Pulse
0.001
0.01
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec)
Normalized Thermal Transient Impedance Curve
5
S TS 3401
A
M
G
F
L
J
B
C
I
H
E
D (TYP.)
2.70
2.40
1.40
0.35
0
3.10
2.80
1.60
0.50
0.10
0.55
0.106
0.094
0.122
0.110
0.063
0.020
0.004
0.022
0.055
0.014
0
0.45
F
0.018
1.90 REF.
0.075 REF.
G
1.00
0.10
1.30
0.20
0.051
0.008
-
0.039
0.004
0.016
I
-
0.40
0.45
0°
J
L
M
0.033
0°
0.045
10°
1.15
10°
6
S TS 3401
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:㎜
T
PACKAGE
SOT-23
E
E1
E2
P0
P1
P2
A0
D0
D1
B0
K0
8.00
+0.30
-0.10
3.50
±0.05
3.00
±0.10
∮1.00
+0.25
1.75
±0.10
4.00
±0.10
4.00
±0.10
0.20
±0.02
3.20
±0.10
1.33
±0.10
∮1.50
+0.10
2.00
±0.05
SOT-23 Reel
UNIT:㎜
TAPE SIZE
REEL SIZE
G
R
W1
S
M
N
V
W
H
K
∮178
±1
∮60
±1
9.00
±0.5
12.00
±0.5
10.5
2.00
±0.5
∮13.5
±0.5
∮10.0
18.00
5.00
8㎜
∮178
7
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