SDU02N60A [SAMHOP]
Transistor;
| 型号： | SDU02N60A |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | Transistor |
| 文件： | 总8页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Green
Product
SDU/D02N60A
Preliminary
a
S mHop Microelectronics Corp.
600V N-Channel Planar MOSFET
PRODUCT SUMMARY
FEATURES
Low Crss (typical 3pF).
RDS(ON) (mΩ) Max
VDSS
600V
ID
Fast Switching.
100% Avalanche Rated.
2A
4.4 @ VGS=10V,ID=1A
G
S
STU SERIES
STD SERIES
TO - 252(D-PAK)
TO - 251(I-PAK)
°
ABSOLUTE MAXIMUM RATINGS TA=25 C unless otherwise noted
)
(
Symbol
VDSS
Parameter
Units
Max.
600
Drain-Source Voltage
Gate-Source Voltage
V
V
VGS
30
2
°
TC=25 C
A
ID
Continuous Drain Curren
°
TC=100 C
A
1.2
8
a
b
IDM
A
Pulsed Drain Current, VGS=10V
Single Pulse Avalanche Energy
EAS
dv/dt
mJ
106
c
4.5
42
V/ns
W
Peak Diode Recovery Energy
°
TC=25 C
Power Dissipation
PD
°
TC>25 C
Linear Derating Factor
W/°C
°C
0.33
Operating and Storage Temperature Range
-55 to 150
TJ, TSTG
THERMAL CHARACTERISTICS
R
3
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
°C/W
°C/W
JC
JA
R
50
Details are subject to change without notice.
Jul,22,2009
www.samhop.com.tw
1
SDU/D02N60A
Preliminary
°
ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted
)
(
Parameter
Min
Max
Symbol
Conditions
Typ
Units
OFF CHARACTERISTICS
V(BR)DSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
600
V
°
Reference to 25 C,
ID=250uA
V(BR)DSS
Breakdown Voltage Temperature
Coefficient
°
V/ C
TBD
/
TJ
IDSS
VDS=600V , VGS=0V
VDS=0V , VGS=30V
VDS=0V , VGS=-30V
Drain-to-Source Leakage Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
uA
nA
nA
20
100
-100
IGSSF
IGSSR
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250uA
2.0
4.0
4.4
10
V
ohm
S
d
VGS=10V , ID=1A
VDS=15V , ID=1A d
Static Drain-Source On-Resistance
Forward Transconductance
RDS(ON)
gFS
DYNAMIC CHARACTERISTICS
pF
pF
pF
Input Capacitance
CISS
240
35
3
VDS=25V,VGS=0V
f=1.0MHz
Output Capacitance
COSS
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
ns
ns
ns
ns
13
38
24
VDD=300V
ID=2A
t
r
RG=10 ohm,RD=150 ohm
d
tD(OFF)
VGS=10V
t
f
51
8.8
Qg
Total Gate Charge
nC
nC
nC
VDS=300V,ID=2A,
Qgs
Qgd
Gate-Source Charge
Gate-Drain("Miller") Charge
12.1
5.1
d
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS
Maximum Continuous Source Current(Body Diode)
Maximum Pulsed Source Current(Body Diode)
Drain-Source Diode Forward Voltage VGS=0V,IS=1A
2
8
A
A
V
ISM
d
VSD
1.5
Notes :
a. Repetitive RatingΚPulse width limited by maximum junction temperature.
°
b. VDD=50V, starting TJ=25 C,L=53mH, RG=25
Ω, IAS=2A
°
c. ISD 2A, di/dt 100A/us, VDD V(BR)DSS, TJ < 150 C
<
<
<
< <
d. Pulse TestΚPulse width 300us, Duty cycle 2%.
Jul,22,2009
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2
SDU/D02N60A
Preliminary
10
VGS
TOP : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
°
C
150
1
Bottom :
°
25
C
1
°
C
-55
0.1
Notes :
1. VDS=40 V
2. 250us Pulse Test
Notes :
1. 250us Pulse Test
°
2. Tc = 25 C
0.01
0.1
0.1
1
10
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2.Transfer Characteristics
3.0
2.5
2.0
12
10
8
VGS=10V
ID=1A
VGS=10V
6
4
1.5
1.0
0.5
0
VGS=20V
2
0
-100
200
Tj( C)
-50
0
50
150
0
1
2
3
5
4
100
ID, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. On-Resistance vs.Drain Current
and Gate Voltage
1.2
ID=250 uA
1.1
1.0
1
°
25
C
0.9
0.8
°
150
C
0.1
-100
-50
0
50
100
150
200
0.4
0.2
0.6
0.8
1.0
1.2
1.4
VSD, Body Diode Forward Voltage(V)
Tj, Junction Temperature ( C)
Figure 5. Breakdown Voltage Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
Jul,22,2009
www.samhop.com.tw
3
SDU/D02N60A
Preliminary
12
10
500
450
400
VDS =300V
ID=2A
Ciss
350
300
250
200
150
100
50
8
6
Coss
4
2
0
Crss
0
0.1
0
1
10
2
4
6
8
10
VDS, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 7.Capacitance
Figure 8. Gate Charge
10
1
0
0
u
t
s
i
m
i
1
L
m
)
s
N
O
(
1
R DS
0
m
1
1
s
0
0
m
D
s
C
0.1
V
GS=10V
Single Pulse
=25 C
T
A
0.01
1
10
100
1000
VDS, Drain-Source Voltage (V)
Figure 9. Maximum Safe Operating Area
Jul,22,2009
www.samhop.com.tw
4
SDU/D02N60A
Preliminary
V(BR )DS S
15V
tp
DR IVE R
L
VDS
D.U.T
R G
+
VDD
-
IAS
20V
0.01
tp
IAS
Unclamped Inductive Test Circuit
Figure 10a.
Unclamped Inductive Waveforms
Figure 10b.
D=0.5
0.2
100
0.1
PDM
0.05
t1
t2
10-1
0.02
0.01
1. RӰJA (t)=r (t) * RӰJA
2. RӰJA=See Datasheet
3. TJM-TA = P* RӰJA (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-5
10-4
10-3
10-2
10-1
100
101
Square Wave Pulse Duration (msec)
Figure 11. Normalized Thermal Transient Impedance Curve
Jul,22,2009
www.samhop.com.tw
5
SDU/D02N60A
Preliminary
PACKAGE OUTLINE DIMENSIONS
TO-251
Jul,22,2009
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6
SDU/D02N60A
Preliminary
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
MILLIMETERS
INCHES
MAX
SYMBOLS
MIN
MAX
MIN
0.086
0.000
0.025
0.026
0.205
0.018
0.235
0.213
0.252
0.193
0.090
0.378
0.052
0.105
0.018
0.035
0.020
A
A1
b
2.184
0.000
0.633
0.666
5.207
0.460
5.969
5.415
6.400
4.902
2.286
9.601
1.313
2.666
0.460
0.889
0.508
2.388
0.127
0.889
1.092
5.461
0.584
6.223
5.515
6.731
5.004
0.094
0.005
0.035
0.043
0.215
0.023
0.245
0.217
0.265
0.197
b1
b2
C
D
D1
E
E1
e
BSC
BSC
H
10.286
1.651
3.174
0.560
1.143
1.016
0.405
0.065
0.125
0.022
0.045
0.040
L
L1
L2
L3
L4
°
°
°
°
8
8
0
0
°
°
7
REF.
1
7
REF.
Jul,22,2009
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7
SDU/D02N60A
Preliminary
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
7.50
1.25
+
540 1.5
4.5
2~ӿ3.0
6.60
" A"
19.75
TO-252 Carrier Tape
P1
P2
D1
T
FEED DIRECTION
K0
A0
D0
P0
UNIT:р
K0
D1
P1
P2
PACKAGE
A0
B0
D0
E
E1
E2
P0
T
ӿ1.5
+ 0.1
TO-252
(16 р*
6.96
²0.1
10.49
²0.1
2.79
²0.1
16.0
²0.3
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
1.75
²0.1
ӿ2
-
0
TO-252 Reel
T
S
G
V
R
H
W
UNIT:р
T
N
W
R
M
H
S
G
K
V
TAPE SIZE
REEL SIZE
ӿ13.0
17.0
+ 1.5
ӿ330
² 0.5
2.0
²0.5
ӿ97
² 1.0
2.2
10.6
16 р
ӿ 330
+
-
0.5
0.2
-
0
Jul,22,2009
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8
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