SDB85N03L [SAMHOP]
N-Channel Logic Level E nhancement Mode Field Effect Transistor; N沟道逻辑E级nhancement模式场效应晶体管
| 型号： | SDB85N03L |
| 厂家： | 
SAMHOP MICROELECTRONICS CORP. |
| 描述： | N-Channel Logic Level E nhancement Mode Field Effect Transistor |
| 文件： | 总6页 (文件大小：532K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S DP /B85N03L
S amHop Microelectronics C orp.
May,2004 ver1.1
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
4
PR ODUCT S UMMAR Y
FE ATUR E S
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
VDS S
ID
R DS (on) ( m
@ VG S = 10V
7.5 @ VG S = 4.5V
Ω
) Max
5
30V
83A
D
G
S DP S E R IE S
TO-220
S DB S E R IE S
TO-263(DD-P AK)
S
ABS OLUTE MAXIMUM R ATING S (TC =25 C unless otherwise noted)
Limit
30
Unit
V
P arameter
S ymbol
Drain-S ource Voltage
V
V
DS
G S
V
G ate-S ource Voltage
20
I
D
83
A
Drain C urrent-C ontinuous @ TJ =125 C
a
-P ulsed
I
DM
249
75
A
Drain-S ource Diode Forward C urrent
I
S
A
W
C
75
Maximum P ower Dissipation
@ Tc=25 C
P
D
Operating and S torage Temperature R ange
T
J
, TS TG
-65 to 175
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, J unction-to-C ase
C/W
C/W
R
J C
J A
2
62.5
Thermal R esistance, J unction-to-Ambient
R
1
S DP /B85N03L
=
25 C unless otherwise noted)
E LE C T R IC AL C HAR AC T E R IS T IC S (T
C
Typ Max
P arameter
C ondition
Min
Unit
S ymbol
4
OFF C HAR AC TE R IS TIC S
V
G S 0V, I
=
D 250uA
=
Drain-S ource Breakdown Voltage
30
V
BVDS S
uA
nA
I
I
DS S
G S S
V
V
DS 24V, VG S 0V
Zero G ate Voltage Drain C urrent
G ate-Body Leakage
10
=
=
G S
16V, VDS 0V
=
=
100
a
ON C HAR AC TE R IS TIC S
1.5
4
V
G S (th)
1
3
5
V
G ate Threshold Voltage
V
DS =VG S , I
D
= 250uA
= 37.5A
m ohm
V
V
V
V
GS = 10V, I
GS = 4.5V, I
G S = 10V, VDS = 10V
DS = 10V, I = 37A
D
R
DS (ON)
Drain-S ource On-S tate R esistance
m ohm
D
= 30A
5.5
7.5
On-S tate Drain C urrent
I
D(ON)
A
S
75
gFS
56
Forward Transconductance
D
b
DYNAMIC C HAR AC TE R IS TIC S
Input C apacitance
P
P
P
F
F
F
3800
1750
390
C
IS S
V
DS =15V, VG S = 0V
Output C apacitance
C
C
OS S
R S S
f =1.0MH
Z
R everse Transfer C apacitance
S WITC HING C HAR AC TE R IS TIC S b
Turn-On Delay Time
t
D(ON)
ns
ns
55
V
DD = 15V,
= 1A,
G S = 10V
G E N = 60
I
D
R ise Time
tr
268
V
V
Turn-Off Delay Time
Fall Time
tD(OFF)
ohm
ns
ns
363
233
95.2
tf
nC
V
V
DS =15V, I
D
D
=85A,VG S =10V
=85A,VG S =4.5V
Q
g
Total G ate C harge
DS =15V, I
45
nC
nC
nC
G ate-S ource C harge
G ate-Drain C harge
Q
Q
gs
7.2
5.6
V
V
DS =15V, I
G S =10V
D
= 85A,
gd
2
S DP /B85N03L
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
C
4
Typ Max
P arameter
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
C ondition
Min
Unit
V
S ymbol
a
Diode F orward Voltage
V
S D
V
G S = 0V, Is =37.5A
1.3
0.9
Notes
a.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
b.G uaranteed by design, not subject to production testing.
25
20
15
10
120
VG S =10,9,8,7,6,5,4V
100
25 C
80
60
40
-55 C
VG S =3V
5
20
TJ =125 C
0
0
0
1
2
3
4
5
6
0
0.5
1.0
1.5
2.0
2.5
3.0
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
2.2
1.8
12000
10000
8000
V
G S =10V
I
D=37.5A
1.4
1.0
6000
0.6
0.2
0
4000
2000
0
C iss
C oss
C rss
-50 -25
0
25
50
100 125
Tj( C )
75
0
5
10
15
20
25
30
VDS , Drain-to S ource Voltage (V)
Figure 4. On-R esistance Variation with
Temperature
Figure 3. C apacitance
3
S DP /B85N03L
1.3
1.15
1.10
1.05
V
DS =V G S
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
4
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hreshold V ariation
with T emperature
F igure 6. B reakdown V oltage V ariation
with T emperature
50
75
60
45
10
30
15
1
V
DS =10V
20
0.1
0
0
10
30
40
0.4
0.6
0.8
1.0
1.2
1.4
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
300
10
t
200
i
m
i
V
DS =15V
D=85A
L
)
100
N
1
s
8
6
4
0
O
I
0
(
μ
R DS
s
1
m
1
0
m
s
1
0
0
m
s
10
D
C
2
0
V
G S =10V
S ingle P ulse
T c=25 C
1
0.5
0.1
1
10
30 60
0
12 24 36
48 60 72 84 96
Qg, T otal G ate C harge (nC )
V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
S DP /B85N03L
4
VDD
on
t
toff
d(off)
t
r
t
d(on)
t
R L
f
t
V IN
90%
10%
90%
D
OUT
V
OUT
V
V
VG S
10%
INVE R TE D
R G E N
G
90%
50%
50%
S
IN
10%
P ULS E WIDTH
Figure 12. S witching Waveforms
Figure 11. S witching Test C ircuit
2
1
D=0.5
0.2
0.1
DM
P
0.1
0.05
1
t
2
t
0.02
0.01
1. R θ J C (t)=r (t) * R θ J C
2. R θ J C =S ee Datasheet
3. TJ M-TC = P * R θ J C (t)
4. Duty C ycle, D=t1/t2
S ingle P ulse
0.01
0.01
0.1
1
10
100
1000
10000
S quare Wave P ulse Duration (msec)
Figure 13. Normalized Thermal Transient Impedance C urve
5
S DP /B85N03L
6
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