D2022UK [SAMES]
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W - 28V - 500MHz PUSH-PULL; 金镀金属多用途硅DMOS射频场效应管45W - 28V - 500MHz的PUSH - PULL
| 型号： | D2022UK |
| 厂家： | 
SAMES |
| 描述： | GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 45W - 28V - 500MHz PUSH-PULL |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TetraFET
D2022UK
METAL GATE RF SILICON FET
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
B
H
C
G
2
3
4
1
45W – 28V – 500MHz
PUSH–PULL
A
D
E
5
F
I
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
N
M
O
J
K
DQ
• VERY LOW C
PIN 1
PIN 3
PIN 5
SOURCE (COMMON) PIN 2
DRAIN 1
GATE 2
rss
DRAIN 2
GATE 1
PIN 4
• SIMPLE BIAS CIRCUITS
• LOW NOISE
DIM
A
B
C
D
E
mm
16.38
1.52
45°
6.35
3.30
14.22
Tol.
Inches
Tol.
0.010
0.005
5°
0.005
0.005
0.005
• HIGH GAIN – 13 dB MINIMUM
0.26
0.13
5°
0.13
0.13
0.13
0.645
0.060
45°
0.250
0.130
0.560
APPLICATIONS
F
G
H
I
J
K
M
N
O
1.27 x 45° 0.13 0.05 x 45° 0.005
• VHF/UHF COMMUNICATIONS
from 50 MHz to 1 GHz
1.52
6.35
0.13
2.16
1.52
5.08
18.90
0.13
0.13
0.02
0.13
0.13
MAX
0.13
0.060
0.250
0.005
0.085
0.060
0.200
0.744
0.005
0.005
0.001
0.005
0.005
MAX
0.005
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
125W
case
P
Power Dissipation
D
BV
BV
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
65V
±20V
DSS
GSS
I
5A
D(sat)
T
T
Storage Temperature
–65 to 150°C
200°C
stg
Maximum Operating Junction Temperature
j
* Per Side
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3827
Issue 1
D2022UK
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
Test Conditions
PER SIDE
case
Parameter
Min.
Typ.
Max. Unit
Drain–Source Breakdown
BV
V
= 0
I = 10mA
65
V
DSS
GS
D
Voltage
Zero Gate Voltage
I
V
V
= 28V
= 20V
V
= 0
1
mA
DSS
DS
GS
Drain Current
I
Gate Leakage Current
V
V
= 0
= V
1
7
μA
V
GSS
GS
DS
DS
V
g
Gate Threshold Voltage*
Forward Transconductance*
I = 10mA
1
GS(th)
D
GS
V
= 10V
I = 1A
0.9
S
fs
DS
D
TOTAL DEVICE
G
Common Source Power Gain
Drain Efficiency
P
V
= 45W
13
40
dB
%
PS
O
η
= 28V
I
= 0.5A
DQ
DS
VSWR
Load Mismatch Tolerance
f = 500MHz
20:1
—
PER SIDE
C
Input Capacitance
Output Capacitance
V
V
= 28V
= 28V
= 28V
V
V
V
= –5V f = 1MHz
60
30
pF
pF
pF
iss
DS
DS
DS
GS
GS
GS
C
= 0
= 0
f = 1MHz
f = 1MHz
oss
C
Reverse Transfer Capacitance V
2.5
rss
* Pulse Test:
Pulse Duration = 300 μs , Duty Cycle ≤ 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
R
Thermal Resistance Junction – Case
Max. 1.4°C / W
THj–case
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 3827
Issue 1
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